CENTRAL CPD82X_10

PROCESS
CPD82X
Schottky Diode
High Current, Low VF Schottky Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
14.6 x 14.6 MILS
Die Thickness
5.5 MILS
Anode Bonding pad Area
11.8 x 11.8 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
80,282
PRINCIPAL DEVICE TYPES
CMDSH2-3
CMDSH2-4L
CMOSH2-4L
CMUSH2-4L
CMKSH2-4L
CMXSH2-4L
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD82X
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m