PROCESS CPD82X Schottky Diode High Current, Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 5.5 MILS Anode Bonding pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 80,282 PRINCIPAL DEVICE TYPES CMDSH2-3 CMDSH2-4L CMOSH2-4L CMUSH2-4L CMKSH2-4L CMXSH2-4L R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD82X Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m