CENTRAL CPD76V

PROCESS
CPD76V
Schottky Diode
1.0A Schottky Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
32 x 32 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
26 x 26 MILS
Top Side Metalization
Al - 20,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
10,915
PRINCIPAL DEVICE TYPES
CMLSH1-40
1N5817
1N5818
1N5819
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (8 -April 2005)