PROCESS CPD71 Central Low Leakage Diode TM Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD71 Typical Electrical Characteristics R1 (1-August 2002)