CENTRAL CPD64

PROCESS
CPD64
Central
Low Leakage Diode
TM
Semiconductor Corp.
Low Leakage Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
17.5 x 17.5 MILS
Die Thickness
8.0 MILS
Anode Bonding Pad Area
8.0 MILS DIAMETER
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 6,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
36,890
PRINCIPAL DEVICE TYPES
CMPD3003
1N3595
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD64
Typical Electrical Characteristics
R2 (1-August 2002)