TC3989A PRE1_20070503 5.0 GHz 37 dBm Prematched FETs FEATURES ! 37dBm Typical Power at 5.0 GHz PHOTO ENLARGEMENT ! High Associated Gain: Ga = 9 dB Typical at 5.0 GHz ! High Efficiency: Efficiency ≥ 40 % for Class AB Operation ! Suitable for High Reliability Application ! Wg = 12 mm ! 100 % DC and RF Tested ! Flange Ceramic Package DESCRIPTION The TC3989A is a 37dBm partially prematched power FET assembled in a flange ceramic package. It requires simple matching networks to achieve high gain and high linearity for 5.0 GHz applications. All devices are 100 % DC and RF tested to assure consistent quality. ABSOLUTE MAXIMUM RATINGS(TA=25 °C) ELECTRICAL SPECIFICATIONS VD=12 V, Idq=180 mA, f=5.0 GHz Conditions Parameter MIN Freq 4.9 P-1* 37 Ga * 8 Efficiency TYP MAX UNIT 5.1 Symbol GHz VDS 37.5 dBm VGS 9 dB ID Parameter Rating Drain-Source Voltage 14 V Gate-Source Voltage -5 V Drain Current 3A @ P-1 40 % PT Continuous Dissipation IDSS VDS=2V, VGS=0 V 3 A Pin Input Power, CW 33 dBm gm VDS=2 V, VGS=0 V 2000 mS TCH Channel Temperature 175 °C VP VDS=2 V,ID=24 mA -1.7 Volts TSTG Storage Temperature - 65 °C to +175 °C 22 Volts 2.5 °C/W BVDGO Rth IDGO=6 mA 18 12 W * FET TO BE TESTED IN TRANSCOM FIXTURE. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/1