TRANSCOM TC2996B

TC2996B
REV1_20070503
1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 12 W Typical Power at 1.9 GHz
• 13 dB Typical Linear Power Gain at 1.9 GHz
• High Linearity: IP3 = 50 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Lg = 1 µm, Wg = 30 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
DESCRIPTION
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 1.9 GHz)
SYMBOL
CONDITIONS
P1dB
Output Power at 1dB Gain Compression Point VDS = 10 V, IDS = 2.5A
GL
Linear Power Gain VDS = 10 V, IDS = 2.5A
MIN
TYP
39.5
41.0
dBm
12
13
dB
rd
MAX
UNIT
IP3
Intercept Point of the 3 -order Intermodulation, VDS = 10 V, IDS = 2.5A, *PSCL = 28 dBm
50
dBm
PAE
Power Added Efficiency at 1dB Compression Power
40
%
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
gm
Transconductance at VDS = 2 V, VGS = 0 V
VP
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
BVDGO
Rth
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
20
7.5
A
5400
mS
-1.7
Volts
22
Volts
1.5
°C/W
* PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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TC2996B
REV1_20070503
ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
HANDLING PRECAUTIONS:
Rating
12 V
-5 V
IDSS
35dBm
60 W
175 °C
- 65 °C to +175 °C
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Source
Drain
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 10 V, ID = 2.5 A)
FREQUENCY
(GHz)
1
2
3
4
5
6
S11
MAG
0.98594
0.93861
0.99773
0.99921
0.99931
0.99920
ANG
174.59
172.82
165.13
158.57
151.93
144.83
S21
MAG
0.99195
0.89877
0.09707
0.02972
0.01351
0.00762
S12
ANG
49.618
-68.601
-125.68
-135.99
-141.86
-146.81
MAG
0.006454
0.010435
0.001768
0.000940
0.000717
0.000618
S22
ANG
-28.741
-127.32
-156.24
-144.13
-137.94
-136.73
MAG
0.71594
0.98480
0.94714
0.96184
0.97169
0.97762
ANG
-163.61
-172.81
179.61
175.04
170.70
166.59
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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TC2996B
REV1_20070503
EVALUATION BOARD
PCB Material: FR4
-Vg
+10 V
Co6
ER = 4.6
Co5
Co4
Thickness = 31 mil
Ci4
Unit: mil
Co3
Co2
Ci2
Ci3
Co1
30mm FET
@1.9GHz
Evaluation PCB
Part Type
Resistor
Reference Designator
R1
Description
12 ohm 0603
Manufacturer
Capacitor
Ci1
1.0 pF 0603
Murata
Capacitor
Ci2
1.0 pF 0603
Murata
Capacitor
Ci3
1.2 pF 0603
Murata
Capacitor
Ci4
1000 pF 0603
Murata
Capacitor
Ci5
10 uF 1206
Murata
Capacitor
Co1
2.2 pF 0603
Murata
Capacitor
Co2
1.0 pF 0603
Murata
Capacitor
Co3
1.5 pF 0603
Murata
Capacitor
Co4
1000 pF 0603
Murata
Capacitor
Co5
0.1 uF 0603
Murata
Capacitor
Co6
10 uF 1206
Murata
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/3