TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • • PHOTO ENLARGEMENT 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package DESCRIPTION The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA MIN TYP MAX UNIT 29.5 30 11 dBm GL Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA 12 dB IP3 Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 240 mA, *PSCL = 17 dBm 40 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz 43 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 600 mA gm Transconductance at VDS = 2 V, VGS = 0 V 400 mS VP Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =1.2 mA 15 Thermal Resistance -1.7** Volts 18 Volts 18 °C/W Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement (1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2591 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature RECOMMANDED OPERATING CONDITION Rating 12 V -5 V IDSS 28 dBm 3.8 W 175 °C - 65 °C to +175 °C Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 240 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 240 mA FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.9111 0.8964 0.8794 0.8578 0.8360 0.8306 0.8581 0.9001 S21 ANG -167.09 166.15 141.85 114.38 79.47 34.88 -14.11 -56.65 MAG 3.8048 2.8222 2.3866 2.1913 2.0878 1.9288 1.5922 1.1456 S12 ANG 68.95 42.16 16.06 -12.25 -44.97 -83.30 -125.20 -165.31 MAG 0.0337 0.0378 0.0429 0.0497 0.0575 0.0627 0.0600 0.0493 S22 ANG -10.27 -31.72 -52.55 -75.68 -103.32 -136.68 -173.75 150.84 MAG 0.4441 0.4297 0.3963 0.3453 0.2799 0.2361 0.3061 0.4635 ANG 170.74 157.73 143.48 124.99 96.28 45.65 -16.20 -58.84 OUTLINE DIMENSIONS (Unit: mm) Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2591 REV4_20070507 NONLINEAR MODEL Cgd Rd Lpkg1 G Lpkg3 Lpkg2 Lg Ld Lpkg1 Lpkg2 Rg FET Cpkg2 Cpkg1 Lpkg3 D Ri Cds Rds Cpkg1 Cpkg2 Crf Cgs Rs Ls Lpkg4 S TOM2 MODEL PARAMETERS VTO ALPHA BETA GAMMA DELTA Q CGD 0.22 pF 4.54 CGS 4.04 pF 0.399 CDS 0.0084 VBR 0.62 pF 15 V -2 V 27 °C 0.003 TNOM 0.009 nH 1.055 LS NG 0 LG 0.0475 nH ND 0.01 LD 0.032 nH TAU 3.9 ps Rds RG 0.65 Ohm Ri RD 0.675 Ohm Crf RS 10.29 Ohm 0.475 Ohm Lpkg1 0.1 nH 1E-14 mA Lpkg2 0.16 nH N 1 Lpkg3 0.07 nH 0.68 V Lpkg4 0.032 nH 0.2 V Cpkg1 0.42 PF 0.5 V Cpkg2 0.26 PF VDELTA VMAX IDS = 600mA at VGS = 0V, VDS = 2V 0.0375 Ohm 1E-7 PF IS VBI MODEL RANGE Frequency: 0.5 to 10 GHz Bias: VDS = 1V to 8V, ID = 100mA to 600mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3