TRANSCOM TC2591

TC2591
REV4_20070507
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
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PHOTO ENLARGEMENT
1 W Typical Output Power at 6 GHz
12 dB Typical Linear Power Gain at 6 GHz
High Linearity: IP3 = 40 dBm Typical at 6 GHz
High Power Added Efficiency:
Nominal PAE of 43 % at 6 GHz
Suitable for High Reliability Application
Breakdown Voltage: BVDGO ≥ 15 V
Lg = 0.35 µm, Wg = 2.4 mm
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Flange Ceramic Package
DESCRIPTION
The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers
for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
P1dB
CONDITIONS
Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA
MIN
TYP MAX UNIT
29.5
30
11
dBm
GL
Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA
12
dB
IP3
Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 240 mA, *PSCL = 17 dBm
40
dBm
PAE
Power Added Efficiency at 1dB Compression Power, f = 6GHz
43
%
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
600
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
400
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA
BVDGO
Rth
Drain-Gate Breakdown Voltage at IDGO =1.2 mA
15
Thermal Resistance
-1.7**
Volts
18
Volts
18
°C/W
Note: * PSCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement
(1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TC2591
REV4_20070507
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
RECOMMANDED OPERATING CONDITION
Rating
12 V
-5 V
IDSS
28 dBm
3.8 W
175 °C
- 65 °C to +175 °C
Symbol
VDS
ID
Parameter
Drain to Source Voltage
Drain Current
Rating
8V
240 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
TYPICAL SCATTERING PARAMETERS (TA=25 °C)
VDS = 8 V, IDS = 240 mA
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
0.9111
0.8964
0.8794
0.8578
0.8360
0.8306
0.8581
0.9001
S21
ANG
-167.09
166.15
141.85
114.38
79.47
34.88
-14.11
-56.65
MAG
3.8048
2.8222
2.3866
2.1913
2.0878
1.9288
1.5922
1.1456
S12
ANG
68.95
42.16
16.06
-12.25
-44.97
-83.30
-125.20
-165.31
MAG
0.0337
0.0378
0.0429
0.0497
0.0575
0.0627
0.0600
0.0493
S22
ANG
-10.27
-31.72
-52.55
-75.68
-103.32
-136.68
-173.75
150.84
MAG
0.4441
0.4297
0.3963
0.3453
0.2799
0.2361
0.3061
0.4635
ANG
170.74
157.73
143.48
124.99
96.28
45.65
-16.20
-58.84
OUTLINE DIMENSIONS (Unit: mm)
Source
Source
Drain
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/3
TC2591
REV4_20070507
NONLINEAR MODEL
Cgd
Rd
Lpkg1
G Lpkg3 Lpkg2
Lg
Ld
Lpkg1 Lpkg2
Rg
FET
Cpkg2
Cpkg1
Lpkg3 D
Ri
Cds
Rds
Cpkg1
Cpkg2
Crf
Cgs
Rs
Ls
Lpkg4
S
TOM2 MODEL PARAMETERS
VTO
ALPHA
BETA
GAMMA
DELTA
Q
CGD
0.22 pF
4.54
CGS
4.04 pF
0.399
CDS
0.0084
VBR
0.62 pF
15 V
-2 V
27 °C
0.003
TNOM
0.009 nH
1.055
LS
NG
0
LG
0.0475 nH
ND
0.01
LD
0.032 nH
TAU
3.9 ps
Rds
RG
0.65 Ohm
Ri
RD
0.675 Ohm
Crf
RS
10.29 Ohm
0.475 Ohm
Lpkg1
0.1 nH
1E-14 mA
Lpkg2
0.16 nH
N
1
Lpkg3
0.07 nH
0.68 V
Lpkg4
0.032 nH
0.2 V
Cpkg1
0.42 PF
0.5 V
Cpkg2
0.26 PF
VDELTA
VMAX
IDS = 600mA at VGS = 0V, VDS = 2V
0.0375 Ohm
1E-7 PF
IS
VBI
MODEL RANGE
Frequency: 0.5 to 10 GHz
Bias: VDS = 1V to 8V, ID = 100mA to 600mA
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/3