SEMIWELL SFS9926

SFS9926
SemiWell Semiconductor
Dual N-Channel MOSFET
Features
■
■
■
■
■
Symbol
Low RDS(on) (0.030Ω )@VGS=4.5V
D2
5
4
G2
Low RDS(on) (0.043Ω )@VGS=2.5V
D2
6
3
S2
Gate Charge (Typical 14nC)
Improved dv/dt Capability
Maximum Junction Temperature Range (150°C)
Available in Tape and Reel
D1
7
2
G1
D1
8
1
S1
General Description
8-SOIC
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for Battery protection circuit, Load switch and other power
management application.
D1
D1
D2
D2
S1
G
S 2
G1 2
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
20
V
Continuous Drain Current(@TA = 25°C)
6.5
A
30
A
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
±12
V
Total Power Dissipation Single Operation (TA=25°C)
2.0
W
Total Power Dissipation Single Operation (TA=70°C)
1.28
W
- 55 ~ 150
°C
300
°C
PD
TSTG, TJ
TL
(Note 1)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJA
Value
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 4)
Min.
Typ.
Max.
-
-
62.5
December, 2002. Rev. 0.
Units
°C/W
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFS9926
Electrical Characteristics
Symbol
( TJ = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
20
-
-
V
-
mV/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
24
IDSS
Drain-Source Leakage Current
VDS = 16V, VGS = 0V
-
-
Gate-Source Leakage, Forward
VGS = 12V, VDS = 0V
Gate-Source Leakage, Reverse
VGS = -12V, VDS = 0V
-
IGSS
1
uA
100
nA
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
0.5
-
1.5
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS = 4.5 V, ID = 6.5A
VGS = 2.5 V, ID = 5.4A
-
0.025
0.036
0.030
0.043
Ω
-
645
-
-
350
-
-
115
-
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =0 V, VDS =10V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
VDD =10V, ID =1A, RG =50 Ω
VGS =4.5V
Rise Time
Turn-off Delay Time
(Note 2,3)
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge(Miller Charge)
-
9
28
-
45
100
-
95
200
-
60
130
ns
-
14
18
-
2.5
-
-
5
-
Min.
Typ.
Max.
Unit.
-
-
1.3
A
-
-
1.2
V
VDS =10V, VGS =4.5V, ID =4.5A
(Note 2,3)
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
VSD
Parameter
Test Conditions
Maximum Continuous Diode Forward Current
Diode Forward Voltage
IS =1.3A, VGS =0V
(Note 2)
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch2 Cu board.
2/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFS9926
Fig 2. Transfer Characteristics
Fig 1. On-State Characteristics
VGS
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
Bottom : 2.0 V
1
10
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
o
125 C
0
10
o
25 C
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
0
10
-1
10
※ Notes :
1. VDS = 5V
2. 250µ s Pulse Test
-1
10
0
10
2
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
0.08
0.06
IDR, Reverse Drain Current [A]
RDS(ON),
Drain-Source On-Resistance [Ω ]
0.07
VGS = 2.5V
0.05
0.04
VGS = 4.5V
0.03
0.02
0.01
0.00
1
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
0
5
10
15
20
10
25
0.2
0.4
0.8
1.0
1.2
1.4
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
1500
5
1000
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
1250
Capacitance [pF]
0.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
※ Notes :
1. VGS = 0V
2. f=1MHz
750
Ciss
500
Coss
250
Crss
0
25℃
0
5
VDS = 10V
4
VDS = 16V
3
2
1
※ Note : ID = 6.5A
10
15
VDS, Drain-Source Voltage [V]
20
25
0
0
3
6
9
12
15
18
QG, Total Gate Charge [nC]
3/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFS9926
Fig 8. On-Resistance Variation
vs. Junction Temperature
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
0.0
-100
200
※ Notes :
1. VGS = 4.5 V
2. ID = 6.5 A
-50
0
50
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Zθ JANormalized, Thermal Response
Fig 9. Normalized Transient Thermal Response Curve
10
0
D = 0 .5
0 .2
10
0 .1
-1
※ N o te s :
1 . Z θ J A( t) = 6 2 .5 ℃ /W
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T A = P D M * Z θ J A( t)
0 .0 5
0 .0 2
s in g le p u ls e
10
-2
10
-4
10
-3
100
o
o
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
4/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
10
1
150
200
SFS9926
Fig. 10. Gate Charge Test Circuit & Waveforms
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
V
4.5V
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 11. Switching Time Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
( 0.5 rated V DS )
4.5V
V
Pulse
Generator
RG
DUT
Vin
10%
tr
td(on)
t on
td(off)
tf
t off
5/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFS9926
8-SOIC Package Dimension
mm
Dim.
Min.
Inch
Typ.
Max.
Min.
Typ.
Max.
A
1.35
1.55
1.75
0.053
0.061
0.069
B
0.1
0.175
0.25
0.004
0.007
0.010
C
0.38
0.445
0.510
0.015
0.018
0.020
D
0.19
0.22
0.25
0.007
0.009
0.010
E
4.8
4.9
5
0.189
0.193
0.197
F
3.8
3.9
4
0.150
0.154
0.157
G
1.27 BSC
H
5.8
6
6.2
0.228
0.236
0.244
I
0.5
0.715
0.93
0.020
0.028
0.037
J
0’
4’
8’
0’
4’
8’
K
0.250
0.375
0.05
0.010
0.015
0.020
0.254(Gap plane)
F
E
A
G
C
B
0.1
H
K × 45°
D
J
I
6/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.