WFD/U2N60
Wisdom Semiconductor
N-Channel MOSFET
Features
RDS(on) (Max 5.0 Ω )@VGS=10V
■
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
2. Drain
{
Symbol
■
●
◀
1. Gate{
▲
●
●
{
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
3. Source
D-PAK, I-PAK
2
1
3
1
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Value
Units
Drain to Source Voltage
Parameter
600
V
Continuous Drain Current(@TC = 25°C)
1.8
A
Continuous Drain Current(@TC = 100°C)
1.1
A
6.0
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
44
W
dv/dt
PD
TSTG, TJ
TL
(Note 1)
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
0.35
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
2.87
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient*
-
-
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFD/U2N60
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
600
-
-
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
0.6
-
V/°C
IDSS
Drain-Source Leakage Current
VDS = 600V, VGS = 0V
-
-
10
uA
IGSS
VDS = 480V, TC = 125 °C
-
-
100
uA
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
-
100
nA
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
-
-100
nA
2.0
-
4.0
V
-
4.0
5.0
Ω
-
320
420
-
35
46
-
4.5
6.0
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Static Drain-Source On-state Resistance
VGS =10 V, ID = 0.9A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
Turn-on Delay Time
VDD =300V, ID =2.0A, RG =25Ω
Rise Time
Turn-off Delay Time
(Note 4, 5)
-
8
30
-
23
60
-
25
60
Fall Time
-
28
70
Qg
Total Gate Charge
-
9.5
13
Qgs
Gate-Source Charge
-
1.6
-
Qgd
Gate-Drain Charge(Miller Charge)
-
4.0
-
Min.
Typ.
Max.
tf
VDS =480V, VGS =10V, ID =2.0A
(Note 4, 5)
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =1.8A, VGS =0V
IS=2.0A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 68mH, IAS =1.8A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
-
-
1.8
-
-
6.0
Unit.
A
-
-
1.4
V
-
230
-
ns
-
1.0
-
uC
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
0
10
ID, Drain Current [A]
Top :
-1
10
0
10
o
150 C
o
25 C
o
-55 C
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
-2
10
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
15
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
18
VGS = 10V
12
VGS = 20V
9
6
3
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
-1
0
1
2
3
5
10
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
600
Capacitance [pF]
4
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
400
Coss
200
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
VGS, Gate-Source Voltage [V]
0
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 2.0 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
2
4
6
8
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 1.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2.0
Operation in This Area
is Limited by R DS(on)
1
10
ID, Drain Current [A]
ID, Drain Current [A]
1.6
100 µs
1 ms
10 ms
0
10
DC
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
0.8
0.4
0.0
25
-2
10
1.2
1
2
10
3
10
10
50
Zθ JC(t), Thermal Response
Figure 9. Maximum Safe Operating Area
100
125
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
※ N o te s :
1 . Z θ J C (t) = 2 .8 7 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
0 .0 1
-1
t1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
10
1
150
Gate Charge Test Circuit & Waveform
V
G
S
S
am
eT
ype
asD
U
T
50K
Ω
Q
g
200nF
12V
10V
300nF
V
D
S
V
G
S
Q
gs
Q
gd
D
U
T
3m
A
C
harge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
t
d
(
o
n
)
t
r
t
d
(
o
ff)
to
n
t
f
to
ff
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
2 -----------------=---- L
IA
E
A
S
S 2
-V
B
V
D
S
S
D
D
L
V
D
S
B
V
D
S
S
IA
S
ID
R
G
1
0
V
tp
V
D
D
D
U
T
ID(t)
V
(t)
D
S
V
D
D
tp
T
im
e
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
V
DD
Package Dimensions
DPAK
0.89 ±0.10
MIN0.55
0.91 ±0.10
0.50 ±0.10
9.50 ±0.30
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(3.05)
(2XR0.25)
(0.10)
0.76 ±0.10
(1.00)
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
2.70 ±0.20
2.30 ±0.10
2.70 ±0.20
2.30TYP
[2.30±0.20]
(0.50)
6.10 ±0.20
MAX0.96
(4.34)
9.50 ±0.30
0.80 ±0.20
0.60 ±0.20
(0.50)
6.10 ±0.20
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
Package Dimensions
(Continued)
IPAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
0.50 ±0.10
16.10 ±0.30
6.10 ±0.20
0.70 ±0.20
(0.50)
9.30 ±0.30
MAX0.96
(4.34)
1.80 ±0.20
0.80 ±0.10
0.60 ±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10