SAMWIN SW 9N 90 N-channel MOSFET TO-3P Features ■ High ruggedness ■ RDS(ON) (Max 1.45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 900V ID : 9.0A RDS(ON) : 1.45ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. 3 Absolute maximum ratings Symbol VDSS SW9n90 Parameter Drain to Source Voltage o ID Continuous Drain Current (@TC=25 C) Continuous Drain Current Unit TO-3P (@TC=100oC) V 9.0 A 5.6 A 36 A ±30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 850 mJ EAR Repetitive Avalanche Energy (note 1) 25 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns Total power dissipation (@TC=25oC) 240 W Derating Factor above 25oC 1.92 W/oC -55 ~ + 150 oC PD TSTG, TJ TL (note 1) 900 Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. o 300 C Thermal characteristics Symbol Rthjc Parameter Typ. Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Mar. 2011. Rev. 3.0 Value Min. Max. 0.52 Unit o C/W oC/W 0.24 40 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. o C/W 1/7 SAMWIN SW 9N 90 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 900 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 1.0 - V/oC - 10 uA Drain to source leakage current VDS=900V, VGS=0V - IDSS VDS=720V, TC=125oC - - 100 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 3.0 - 5.0 V 1.1 1.45 Ω I GSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 4.5A Dynamic characteristics 2700 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 35 td(on) Turn on delay time 100 tr td(off) tf VGS=0V, VDS=25V, f=1MHz 260 Rising time pF 210 Turn off delay time VDS=450V, ID=9A, RG=50Ω ns 280 Fall time 170 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 60 72 12 - 26 - Min. Typ. Max. Unit - - 9 A - - 36 A VDS=720V, VGS=10V, ID=9A nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=9A, VGS=0V - - 1.5 V Trr Reverse recovery time - 720 - ns Qrr Breakdown voltage temperature IS=9A, VGS=0V, dIF/dt=100A/us - 7.6 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 23mH, IAS = 9.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 9.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW 9N 90 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 4. On state current vs. diode forward voltage Fig. 3. On-resistance variation vs. drain current and gate voltage IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 2.5 VGS = 10V 2.0 VGS = 20V 1.5 1 10 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 1.0 -1 0 5 10 15 20 25 30 10 0.2 0.4 0.6 ID, Drain Current [A] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 Capacitance [pF] 2500 Ciss 2000 1500 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 500 1.0 1.2 1.4 Crss Fig. 6. Gate charge characteristics 12 VDS = 180V VDS = 450V 10 VGS, Gate-Source Voltage [V] Fig. 5. Capacitance characteristics (Non-Repetitive) 3500 0.8 VSD, Source-Drain voltage [V] VDS = 720V 8 6 4 2 ※ Note : ID = 9A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] 0 0 10 20 30 40 50 QG, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW 9N 90 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 10 Operation in This Area is Limited by R DS(on) 2 10 10 µs ID, Drain Current [A] 6 4 0 25 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 2 -2 50 75 100 125 10 150 0 1 10 TC, Case Temperature [℃] 2 10 10 3 10 VDS, Drain-Source Voltage [V] Fig. 11. Transient thermal response curve 10 Zθ JC(t), Thermal Response ID, Drain Current [A] 8 0 D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 0 .4 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 -1 0 .1 PDM 0 .0 5 t1 0 .0 2 10 0 .0 1 -2 10 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW 9N 90 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS 2 BVDSS L X IAS2 X BVDSS - VDD IAS VDS RG VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW 9N 90 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW9N90 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ REV 3.0 Confirmed the VTH characteristic Alice Nie 2011.09.16 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7