SAMWIN SW4N65 N-channel MOSFET TO-251 Features TO-252 BVDSS : 650V ID ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 1 2 : 4.0A RDS(ON) : 2.6ohm 2 3 3 2 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 3 Order Codes Item 1 2 Sales Type SW I 4N65 SW D 4N65 Marking SW4N65 SW4N65 Package TO-251 TO-252 Packaging TUBE REEL Absolute maximum ratings Symbol VDSS ID Value Parameter Drain to Source Voltage Continuous Drain Current Unit TO-251 (@TC=25oC) Continuous Drain Current (@TC=100oC) V 4.0 A 2.6 A 16 A ± 30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 143 mJ EAR Repetitive Avalanche Energy (note 1) 10.6 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns 54 W 0.43 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL (note 1) 650 Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Parameter Value Min. Typ. Max. Unit Rthjc Thermal resistance, Junction to case 2.3 oC/W Rthja Thermal resistance, Junction to ambient 83 oC/W Mar. 2011. Rev. 2.0 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW4N65 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 650 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.53 - V/oC - 1 uA Drain to source leakage current VDS=650V, VGS=0V - IDSS VDS=520V, TC=125oC - - 10 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 2.6 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 2.0A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss td(on) tr td(off) tf 570 740 70 90 Reverse transfer capacitance 20 24 Turn on delay time 21 52 46 102 102 214 34 78 18.6 28 3.0 - 6.0 - Min. Typ. Max. Unit - - 4 A - - 16 A Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=320V, ID=4.0A, RG=25Ω Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=520V, VGS=10V, ID=4.0A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=4.0A, VGS=0V - - 1.4 V Trr Reverse recovery time - 390 - ns Qrr Breakdown voltage temperature IS=4.0A, VGS=0V, dIF/dt=100A/us - 1.6 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 19mH, IAS = 4.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 4.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW4N65 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics 1 1 10 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 10 -1 10 ، طNotes : 1. 250¥ىs Pulse Test 2. TC = 25،ة ID, Drain Current [A] ID, Drain Current [A] Top : 150 C o 25 C o -55 C ، طNotes : 1. VDS = 50V 2. 250¥ىs Pulse Test -2 10 o 0 10 -1 -1 0 10 10 1 10 10 2 3 4 VDS, Drain-Source Voltage [V] 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 6 IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [¥]ط 1 10 5 4 VGS = 10V 3 VGS = 20V 2 1 150،ة 25،ة 0 10 ، طNotes : 1. VGS = 0V ، طNote : TJ = 25،ة 2. 250¥ىs Pulse Test -1 10 0 0 2 4 6 8 10 0.2 12 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics 12 750 VGS, Gate-Source Voltage [V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Capacitance [pF] Crss=Cgd Ciss 500 ، طNotes : 1. VGS = 0V 2. f=1MHz Coss 250 Crss 10 VDS = 325V 8 VDS = 520V 6 4 2 *. Note : ID = 4.0A 0 0 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] 30 35 0 4 8 12 16 20 QG, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW4N65 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 2.5 RDS(on), (Normalized) 1.1 1.0 ، طNotes : 1. VGS = 0 V 0.9 2. ID = 250 ¥ىA 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 2 5 10 Operation in This Area is Limited by R DS(on) 4 ID, Drain Current [A] 3 2 100 s 1 ms 10 ms 0 10 DC -1 10 ، طNotes : o 1. TC = 25 C 1 o 2. TJ = 150 C 0 25 3. Single Pulse -2 50 75 100 125 10 150 0 1 10 2 10 o TC' Case Temperature [ C] 10 3 10 VDS, Drain-Source Voltage [V] Fig. 11. Transient thermal response curve 0 10 Z¥èJC (t), Thermal Response ID' Drain Current [A] 1 10 D=0.5 0.2 ، طNotes : 1. Z¥èJC(t) = 1.25 ،ة/W Max. 0.1 -1 10 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z¥èJC(t) 0.05 0.02 0.01 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW4N65 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW4N65 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW4N65 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7