SAMWIN SW634 N-channel MOSFET Features TO-220F TO-220 BVDSS : 250V ID ■ High ruggedness ■ RDS(ON) (Max 0.45 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 9A RDS(ON) : 0.45ohm 1 2 1 3 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. 3 Order Codes Item 1 2 Sales Type SW P 634 SW F 634 Marking SW634 SW634 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID 250 Unit V 9.0 9.0* A Continuous Drain Current (@TC=100oC) 5.2 5.2* A VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak diode Recovery dv/dt TL TO-220F Continuous Drain Current (@TC=25oC) Drain current pulsed TSTG, TJ TO-220 Drain to Source Voltage IDM PD Value Parameter (note 1) Total power dissipation (@TC Derating Factor above 36 A ± 30 V (note 2) 200 mJ (note 1) 7.4 mJ (note 3) 4.8 V/ns =25oC) 25oC Operating Junction Temperature & Storage Temperature 74 38* W 0.78 0.3 W/oC -55 ~ + 150 oC 300 oC Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Rthcs Rthja Mar. 2011. Rev. 2.0 Parameter Thermal resistance, Junction to case Thermal resistance, Case to Sink Thermal resistance, Junction to ambient Value TO-220 1.7 TO-220F 3.33 0.5 62.5 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Unit oC/W oC/W oC/W 1/7 SAMWIN SW634 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 250 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.35 - V/oC - 1 uA Drain to source leakage current VDS=250V, VGS=0V - IDSS VDS=200V, TC=125oC - - 20 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 0.35 0.45 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 4.5A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 32 td(on) Turn on delay time 38 tr td(off) tf Rising time Turn off delay time 1220 VGS=0V, VDS=25V, f=1MHz 130 38 VDS=125V, ID=9.0A, RG=25Ω pF ns 150 Fall time 80 Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 20 VDS=200V, VGS=10V, ID=9A 34 5 nC 10 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit - - 9 A - - 36 A IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=9A, VGS=0V - - 1.5 V Trr Reverse recovery time - 170 - ns Qrr Breakdown voltage temperature IS=9A, VGS=0V, dIF/dt=100A/us - 0.85 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 4.5mH, IAS = 9A, VDD = 50V, RG=50Ω, Starting TJ = 25oC 3. ISD ≤ 9A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW634 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ، طNotes : 1. VDS = 30V ، طNotes : 1. 250¥ىs Pulse Test 2. TC = 25،ة 2. 250¥ىs Pulse Test -1 10 -1 10 0 2 1 10 10 3 4 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [¥]ط 2.0 1.5 1.0 VGS = 10V 0.5 VGS = 20V 1 10 0 10 150،ة ، طNotes : 1. VGS = 0V 2. 250¥ىs Pulse Test ، طNote : TJ = 25،ة -1 0.0 0 6 12 18 10 24 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics 1250 12 Coss=Cds+Cgd Crss=Cgd ، طNotes : 1. VGS = 0V 1000 Coss 2. f=1MHz 750 Ciss 500 VGS, Gate-Source Voltage [V] Ciss=Cgs+Cgd(Cds=shorted) Capacitance [pF] 25،ة VDS = 200V 10 VDS = 125V VDS = 50V 8 6 4 250 2 ، طNote : ID = 10A Crss 0 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] 35 40 0 0 5 10 15 20 25 QG, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW634 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 RDS(on), (Normalized) 1.1 1.0 ، طNotes : 1. VGS = 0 V 0.9 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 ¥ىA 0.8 -100 2.5 2.0 1.5 1.0 ، طNotes : 1. VGS = 10 V 0.5 2. ID = 4.5 A -50 0 50 100 150 0.0 -100 200 -50 0 50 100 o TJ, Junction Temperature [ C] 150 200 o TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 2 10 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID' Drain Current [A] 8 6 4 100 s 1 10 1 ms 10 ms DC 0 10 ، طNotes : o 1. TC = 25 C 2 o 2. TJ = 150 C 3. Single Pulse 0 25 -1 10 50 75 100 125 0 1 10 150 2 10 o 10 3 10 VDS, Drain-Source Voltage [V] TC' Case Temperature [ C] Fig. 11. Transient thermal response curve 1 Z¥èJC (t), Thermal Response 10 D=0.5 0 10 0.2 ، طNotes : 1. Z¥èJC(t) = 1.60 ،ة/W Max. 0.1 2. Duty Factor, D=t1/t2 0.05 3. TJM - TC = PDM * Z¥èJC(t) 0.02 0.01 -1 10 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW634 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW634 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW634 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7