SIM400D06AV3 Preliminary “HALF-BRIDGE” IGBT MODULE VCES = 600V Ic=400A Feature Applications ▪ Smart field stopper +Trench ▪ Motor controls VCE(ON) typ. = 1.6V @Ic=400A ▪ VVVF inverters design technology ▪ Inverter-type welding MC over 18KHZ ▪ Low VCE (sat) ▪ SMPS, Electrolysis ▪ Low Turn-off losses ▪ UPS/EPS, Robotics ▪ Short tail current for over 20KHz Package : V3 Absolute Maximum Ratings @ Tj=25℃ (Per Leg) Symbol Parameter VCES Collector-to-Emitter Voltage VGE Gate emitter voltage Condition TC = 25℃ Ratings Unit 600 V ± 20 V 400 (500) A 800 A 400 (500) A IC Continuous Collector Current TC = 80℃ (25℃) ICP Pulsed collector current TC = 25℃ IF Diode Continuous Forward Current TC = 80℃ (25℃) Diode Maximum Forward Current TC = 25℃ 800 A Short circuit test, VGE = 15V, VCC = 360V TC = 150℃ (25℃) 6 (8) ㎲ Isolation Voltage test AC @ 1 minute 2500 V 360 g IFM tp Viso Weight Weight of Module Tj Junction Temperature -40 ~ 150 ℃ Tstg Storage Temperature -40 ~ 125 ℃ Md Mounting torque with screw : M6 4.0 N.m Static Characteristics @ Tj = 25℃ (unless otherwise specified) Parameters VCE(ON) Min Collector-to-Emitter Saturation Voltage Typ Max 1.60 1.95 Unit Test conditions IC = 400A, VGE = 15V V VGE(th) Gate Threshold Voltage 5.8 6.5 VCE = VGE, Ic = 8㎃ ICES Zero Gate Voltage Collector Current ㅡ ㅡ 5.0 ㎃ VGE = 0V, VCE = 600V IGES Gate-to-Emitter Leakage Current ㅡ ㅡ 400 ㎁ VCE = 0V, VGE = 20V Diode Forward Voltage Drop ㅡ 1.6 2.0 V IF = 400A, VGE = 0V Integrated gate resistor ㅡ 1 ㅡ Ω VF RGINT -1- SIM400D06AV3 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Min Typ Max Ciss Input capacitance ㅡ 24670 ㅡ Coss Output capacitance ㅡ 1540 ㅡ Crss Reverse transfer capacitance ㅡ 732 ㅡ td(on) Turn-on delay time ㅡ 145 ㅡ Rise time ㅡ 60 ㅡ Unit Test conditions VCE = 25V, VGE = 0V pF f = 1 MHz tr Inductive Switching (125℃) VCC = 300V ns td(off) tf Turn-off delay time ㅡ 320 ㅡ IC = 400A, VGE = ±15V Fall time ㅡ 80 ㅡ RG = 2.2Ω VBR Cathode-Anode breakdown Voltage 600 ㅡ ㅡ V IRM Maximum Reverse Leakage Current ㅡ ㅡ 350 ㎂ VR = 600V trr Reverse Recovery Time ㅡ 125 ㅡ ns IF = 400A, VR = 300V Qrr Reverse Recovery Charge ㅡ 20.3 ㅡ µC di / dt = 4000A /㎲ Thermal Characteristics Symbol Parameter Min Typ Max RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.12 RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.22 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.03 - -2- Unit ℃/W SIM400D06AV3 Preliminary Fig.1, Output characteristic (typical) Fig.2 Output characteristic (typical) IC = f(TVJ) IC = f(VGE) VGE = 15V Tvj = 150℃ Fig.3, Transfer characteristic (typical) Fig.4, Reverse bias RBSOA IC = f(TVJ) VCE = 20V VGE Fig.5, Forward characteristic of diode IF = f(TJ) -3- = ±15V, RGoff = 2.4Ω, Tvj = 150℃ Preliminary SIM400D06AV3 Package Outline (dimensions in mm) www.semiwell.com JUNE 2008 Headquarter: Sales & Marketing #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, [email protected] Bucheon-City, S.KOREA [email protected] Tel)+82-32-234-4781, Fax)+82-32-234-4789 -4-