SIM200D12SV3 Preliminary “HALF-BRIDGE” IGBT MODULE VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V Features Applications ▪Trench gate + field stopper, using ▪ AC & DC Motor controls Infineon chip design ▪ VVVF inverters ▪ 10µs Short circuit capability ▪ Optimized for high frequency inverter @ Ic = 200A Type Welding machines ▪ Low turn-off losses ▪ Short tail current for over 18KHz ▪ SMPS ▪ Positive VCE(on) ▪ UPS, Robotics Package : V3 temperature coefficient Absolute Maximum Ratings @ Tj=25℃ (per leg) Symbol Parameter VCES Collector-to-Emitter Voltage VGES Gate emitter voltage IC VGE = 0V, Condition Ratings Unit IC = 1.0mA 1200 V ± 20 V 200(260) A 400 A 200(260) A 400 A 10 µs 2500 V Continuous Collector Current TC = 80℃(25℃) Pulsed collector current TC = 25℃ Diode Continuous Forward Current TC = 80℃(25℃) IFM Diode Maximum Forward Current Tc=25℃ TSC Short Circuit Withstand Time Viso Isolation Voltage test Tj Junction Temperature -40 ~ 150 ℃ Tstg Storage Temperature -40 ~ 125 ℃ Weight of Module 360 g Power Terminal Screw : M5 3.5 Nm Terminal connection Screw : M5 3.5 Nm ICM IF Weight Mounting Torque AC 1 minute Electrical Characteristics @ Tj = 25℃ (unless otherwise specified) Symbol Parameters Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - VCE(ON) Collector-to-Emitter Saturation Voltage 1.4 1.7 2.15 VGE(th) Gate Threshold Voltage 5.0 5.8 6.5 Unit Test conditions VGE = 0V, IC = 1.0mA V IC = 200A, VGE = 15V VCE = VGE, IC = 500µA ICES Zero Gate Voltage Collector Current - - 1.0 mA VGE = 0V, VCE = 1200V IGES Gate-to-Emitter Leakage Current - - ± 200 nA VCE = 0V, VGE = ± 20V -1- SIM200D12SV3 Preliminary VFM Diode Forward Voltage Drop - 1.65 2.15 V IC = 200A Switching Characteristic @ Tj = 25℃ (unless otherwise specified) Symbol Parameters Min Typ Max Unit Cies Input capacitance - 17306 - Coss Output capacitance - 810 - Cres Reverse transfer capacitance - 360 - td(on) Turn-on delay time - 300 - Rise time - 108 - Turn-off delay time - 660 - tf Fall time - 156 - Irr Diode Peak Reverse Recovery current - 160 - A trr Diode Reverse Recovery time - 250 - ns tr td(off) Test conditions VCC = 30V, pF VGE = 0V f = 1.0MHz Tj = 125℃, VCC = 600V IC = 200A, ns VGE = 15V RG = 3.6Ω Tj = 125℃, VCC = 600V IF = 200A, VGE = 15V RG = 3.6Ω, di/dt=1200A/us Thermal Characteristic Values Symbol Parameters Min Typ Max RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.10 RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.20 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.04 - -2- Unit ℃/W Preliminary Fig 1. Maximum DC Collector Current SIM200D12SV3 Fig 2. Power Dissipation vs. Case vs. Case Temperature Temperature Fig 3. Typ. IGBT Output Characteristics Fig 4. Typ. IGBT Output Characteristics TJ = 25℃; tp = 80µs TJ = 125℃; tp = 80µs -3- Preliminary Fig 5. Typ. Diode Forward Characteristics SIM200D12SV3 Fig 6. Typ. Transfer Characteristics tp = 80µs VCE = 50V; tp = 10µs Fig 7. Typical VCE vs. VGE Fig 8. Typical VCE vs. VGE TJ = 25℃ TJ = 125℃ -4- Preliminary Fig 9. Typ. Capacitance vs. VCE SIM200D12SV3 Fig 10. Typical Gate Charge vs. VGE VGE = 0V; f = 1Mhz ICE = 120A; L = 600µH Fig 11. Typ. Switching Time vs. IC Fig 12. Typ. Switching Time vs. RG TJ = 125℃; L = 200µH; VCE = 600V TJ = 125℃; L = 200µH; VCE = 600V RG = 3.9Ω; VGE = 15V ICE = 200A; VGE = 15V -5- Preliminary SIM200D12SV3 Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) -6- Preliminary SIM200D12SV3 Package Outline (dimensions in mm) OCT., 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Sales & Marketing Bucheon-City, S.KOREA Marketing: [email protected] Tel)+82-32-234-4781, Sales: [email protected] Fax)+82-32-234-4789 Web-site: WWW. Semiwell.com -7-