SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules &( &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + + 0D11 + Freewheeling diode SKM 300GB123D &( &(; . 4 05 91 6* 4 / &( 4 /1 C C .? 4 /51 6* SKM 300GAL123D . 4 05 6* # Characteristics Symbol Conditions IGBT SKM 300GAR123D =7 Features ! Units /011 :11 001 <11 > 01 ' <1 AAA B /51 /05 +* / A Values . 4 05 91 6* 4 / .? . . 4 05 6* # "! # $ % & ' # ( ) # *+ & " ,*- , * - .! /0 01 Typical Applications # +* 23 min. 4 *7 &* 4 9 + =7 4 1 *7 4 *7 .? 4 05 /05 6* .? 4 05 /05 6* =7 4 /5 .? 4 05 /05 6* =7 &*7 *7. *7 *7 &* 4 011 + <5 =7 4 /5 * * * *7 # =7 4 1 *7 4 05 # 4 / G ;**HB77H A ' .4 05 /05 6* ## # ** 4 $11 &* 4 011 + ;= 4 ;=## 4 <E F .? 4 /05 6* =7 4 > /5 typ. max. 55 1/ /< /$ 55 E5 $5 1: /$ /9 E D5 05 :/ : :E /9 05 / 0< :0 /: 01 1:5 15 051 D1 551 E1 7 7## Units + F ( ( ( F <11 /$1 E11 /11 09 0$ I Inverse diode ( 4 7* . . &;; J 7 &( 4 011 +C =7 4 1 C .? 4 05 /05 6* .? 4 05 /05 6* .? 4 05 /05 6* &( 4 011 +C .? 4 /05 6* K 4 <111 +KL =7 41 0 /9 05 // <5 /D1 :5 /0 $5 95 F + L* I FWD ( 4 7* . . &;; J 7 &( 4 :11 +C =7 4 1 .? 4 05 /05 6* .? 4 05 /05 6* .? 4 05 /05 6* &( 4 011 +C .? 4 /05 6* K 4 :511 +KL =7 0 /9 // : 001 5: 05 /0 <: 41 F + L* I Thermal characteristics ;?' ;?', ;?'(, &=-. & , (N, 11E5 1/9 1/5 MKN MKN MKN ;' 11:9 MKN 5 5 :05 Mechanical data GB GAL GAR O $ $ 1 22-09-2005 RAA : 05 © by SEMIKRON SKM 300GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 22-09-2005 RAA © by SEMIKRON SKM 300GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 22-09-2005 RAA © by SEMIKRON SKM 300GB123D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm =- * , 5$ =+ * , 5E P , 5$ =+; * , 59 P , 5$ * , 5$ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 22-09-2005 RAA © by SEMIKRON