NTTS2P02R2 Power MOSFET −2.4 Amps, −20 Volts Single P−Channel Micro8t http://onsemi.com Features • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided Pb−Free Package is Available −2.4 AMPERES −20 VOLTS RDS(on) = 90 mW Single P−Channel D Applications • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS ±8.0 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 160 0.78 −2.4 −1.92 −20 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 88 1.42 −3.25 −2.6 −30 °C/W W A A A TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = −5.0 Apk, L = 28 mH, RG = 25 W) EAS 350 mJ Maximum Lead Temperature for Soldering Purposes for 10 seconds TL Operating and Storage Temperature Range March, 2006 − Rev. 5 MARKING DIAGRAM & PIN ASSIGNMENT D D D D 8 8 WW ADG G 1 Micro8 CASE 846A STYLE 1 1 S S S G AD WW G = Specific Device Code = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2″ square FR−4 Board (1 IN SQ, 2 oz Cu 0.06″ thick single sided), Steady State. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. © Semiconductor Components Industries, LLC, 2006 S 1 Device Package Shipping† NTTS2P02R2 Micro8 4000/Tape & Reel Micro8 (Pb−Free) 4000/Tape & Reel NTTS2P02R2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTS2P02R2/D NTTS2P02R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4) Characteristic Symbol Min Typ Max Unit −20 − − −12.7 − − − − − − −1.0 −25 − − −5.0 − − −100 − − 100 −0.5 − −0.90 2.5 −1.4 − − − − 0.070 0.100 0.110 0.090 0.130 − gFS 2.0 4.2 − Mhos Ciss − 550 − pF Coss − 200 − Crss − 100 − td(on) − 10 − tr − 31 − td(off) − 33 − tf − 29 − td(on) − 15 − tr − 40 − td(off) − 35 − tf − 35 − Qtot − 10 18 Qgs − 1.5 − Qgd − 5.0 − VSD − − −0.88 −0.75 −1.0 − Vdc trr − 37 − ns ta − 16 − tb − 21 − QRR − 0.025 − OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −16 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −16 Vdc, TJ = 125°C) IDSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) IDSS Gate−Body Leakage Current (VGS = −8 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +8 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −4.5 Vdc, ID = −2.4 Adc) (VGS = −2.7 Vdc, ID = −1.2 Adc) (VGS = −2.5 Vdc, ID = −1.2 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −1.2 Adc) Vdc mV/°C W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 5 & 6) Turn−On Delay Time Rise Time (VDD = −10 Vdc, ID = −2.4 Adc, VGS = −4.5 Vdc, RG = 6.0 W) Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time (VDD = −10 Vdc, ID = −1.2 Adc, VGS = −2.7 Vdc, RG = 6.0 W) Turn−Off Delay Time Fall Time Total Gate Charge (VDS = −16 Vdc, VGS = −4.5 Vdc, ID = −2.4 Adc) Gate−Source Charge Gate−Drain Charge ns ns nC BODY−DRAIN DIODE RATINGS (Note 5) Diode Forward On−Voltage (IS = −2.4 Adc, VGS = 0 Vdc) (IS = −2.4 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = −2.4 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Handling precautions to protect against electrostatic discharge are mandatory. 5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 mC NTTS2P02R2 VGS = −10 V VGS = −4.5 V VGS = −2.5 V 3 TJ = 25°C VGS = −1.9 V 2 VGS = −1.7 V 1 VGS = −1.5 V 0 0.2 2 4 6 8 10 4 3 2 TJ = 25°C 1 TJ = 100°C 1 3 2.5 Figure 2. Transfer Characteristics. 0.05 2 4 6 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.12 TJ = 25°C 0.1 VGS = −2.7 V 0.08 VGS = −4.5 V 0.06 0.04 1 1.5 1000 ID = −2.4 A VGS = −4.5 V VGS = 0 V −IDSS, LEAKAGE (nA) 100 1.2 1 0.8 0 25 75 50 100 125 TJ, JUNCTION TEMPERATURE (°C) 2.5 3 3.5 4 4.5 Figure 4. On−Resistance vs. Drain Current and Gate Voltage. 1.6 −25 2 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage. RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 Figure 1. On−Region Characteristics. 0.1 0.6 −50 1.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 25°C 1.4 TJ = 55°C −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.15 0 VDS > = 10 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 5 VGS = −2.1 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 4 150 TJ = 125°C TJ = 100°C 10 TJ = 25°C 1 0.1 0.01 0 Figure 5. On−Resistance Variation with Temperature. 4 8 12 16 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−to−Source Leakage Current vs. Voltage. http://onsemi.com 3 20 C, CAPACITANCE (pF) VDS = 0 V 1200 VGS = 0 V Ciss 900 TJ = 25°C Crss Ciss 600 300 0 Coss Crss 10 5 0 −VGS −VDS 5 10 15 20 5 20 18 QT 16 4 14 3 10 Q2 2 1 0 12 VGS Q1 8 VDS 0 2 4 6 ID = −2.4 A TJ = 25°C 6 8 12 10 4 14 2 0 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1500 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTTS2P02R2 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 7. Capacitance Variation 100 VDD = −10 V ID = −1.2 A VGS = −2.7 V 100 tr VDD = −10 V ID = −2.4 A VGS = −4.5 V td (on) 10 1.0 tf td (on) 10 tf td (off) 10 td (off) tr t, TIME (ns) t, TIME (ns) 1000 1.0 100 RG, GATE RESISTANCE (OHMS) 1.0 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Resistive Switching Time Variation versus Gate Resistance −IS, SOURCE CURRENT (AMPS) 2 1.6 VGS = 0 V TJ = 25°C di/dt IS trr 1.2 ta tb TIME 0.8 0.25 IS tp IS 0.4 0 0.4 0.5 0.6 0.7 0.8 0.9 1 Figure 12. Diode Reverse Recovery Waveform −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current http://onsemi.com 4 NTTS2P02R2 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 Normalized to R∅ja at Steady State (1 inch pad) 0.1 0.0125 W 0.0563 W 0.110 W 0.273 W 0.113 W 0.436 W 2.93 F 152 F 261 F 0.05 0.02 0.01 0.021 F 0.137 F 1.15 F Single Pulse 0.01 1E−03 1E−02 1E−01 1E+00 1E+03 t, TIME (s) Figure 13. FET Thermal Response. http://onsemi.com 5 1E+02 1E+03 NTTS2P02R2 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A−01 OBSOLETE, NEW STANDARD 846A−02. D HE PIN 1 ID −T− E e b 8 PL 0.08 (0.003) T B M S A DIM A A1 b c D E e L HE STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. S SEATING PLANE A 0.038 (0.0015) A1 L c MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.016 0.021 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 3.20 0.126 6X 8X 4.24 0.167 0.65 0.0256 5.28 0.208 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a registered trademark of International Rectifier Corporation. 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