ONSEMI NTMS4N01R2

NTMS4N01R2
Power MOSFET
4.2 Amps, 20 Volts
N−Channel Enhancement−Mode
Single SO−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on) Providing
•
•
•
•
•
Higher Efficiency
Miniature SO−8 Surface Mount Package Saving Board Space;
Mounting Information for the SO−8 Package is Provided
IDSS Specified at Elevated Temperature
Drain−to−Source Avalanche Energy Specified
Diode Exhibits High Speed, Soft Recovery
Pb−Free Package is Available
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4.2 AMPERES, 20 VOLTS
0.045 W @ VGS = 4.5 V
Single N−Channel
D
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
G
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Drain−to−Gate Voltage (RGS = 1.0 mW)
VDGR
20
V
Gate−to−Source Voltage − Continuous
VGS
±10
V
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
50
2.5
5.9
4.7
25
°C/W
W
A
A
A
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
100
1.25
4.2
3.3
20
°C/W
W
A
A
A
RqJA
PD
ID
ID
IDM
162
0.77
3.3
2.6
15
°C/W
W
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
Peak IL = 7.5 Apk, L = 6 mH, RG = 25 W)
EAS
169
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
MARKING DIAGRAM
AND PIN ASSIGNMENT
N.C.
Source
Source
Gate
1
8
2
7
3
4
6
5
Drain
Drain
Drain
Drain
Top View
E4N01 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t ≤ 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t = steady state.
3. Minimum FR−4 or G−10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
January, 2006 − Rev. 3
SO−8
CASE 751
STYLE 13
1
Thermal Resistance, Junction−to−Ambient
(Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
© Semiconductor Components Industries, LLC, 2006
S
E4N01
AYWW G
G
Symbol
1
Device
Package
Shipping †
NTMS4N01R2
SO−8
2500 / Tape & Reel
SO−8
(Pb−Free)
2500 / Tape & Reel
NTMS4N01R2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4N01R2/D
NTMS4N01R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max
20
−
−
20
−
−
−
−
−
−
−
0.2
1.0
10
−
−
−
100
−
−
−100
0.6
−
0.95
−3.0
1.2
−
−
−
−
0.030
0.035
0.037
0.04
0.05
−
−
10
−
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
IDSS
Gate−Body Leakage Current
(VGS = +10 Vdc, VDS = 0 Vdc)
IGSS
Gate−Body Leakage Current
(VGS = −10 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = 4.5 Vdc, ID = 4.2 Adc)
(VGS = 2.7 Vdc, ID = 2.1 Adc)
(VGS = 2.5 Vdc, ID = 2.0 Adc)
RDS(on)
Forward Transconductance
(VDS = 2.5 Vdc, ID = 2.0 Adc)
Vdc
mV/°C
W
gFS
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
−
870
1200
Coss
−
260
400
Crss
−
60
100
td(on)
−
13
25
pF
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn−On Delay Time
(VDD = 12 Vdc, ID = 4.2 Adc,
VGS = 4.5 Vdc,
RG = 2.3 W)
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
(VDS = 12 Vdc,
VGS = 4.5 Vdc,
ID = 4.2 Adc)
Gate−Source Charge
Gate−Drain Charge
ns
tr
−
35
65
td(off)
−
45
75
tf
−
50
90
Qtot
−
11
16
Qgs
−
2.0
−
Qgd
−
3.0
−
VSD
−
−
0.85
0.70
1.1
−
Vdc
trr
−
20
−
ns
ta
−
12
−
tb
−
8.0
−
QRR
−
0.01
−
nC
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = 4.2 Adc, VGS = 0 Vdc)
(IS = 4.2 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 4.2 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
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2
mC
NTMS4N01R2
8V
2.1 V
6
1.9 V
4.5 V
3.1 V
2.7 V
2.5 V
2.3 V
5
4
3
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
7
TJ = 25°C
1.7 V
2
1
0
1.5 V
VGS = 1.3 V
0
0.25
0.5
0.75
1
1.25
1.5 1.75
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
6
4
100°C
2
25°C
TJ = −55°C
0
2
VDS ≥ 10 V
8
0.5
RDS(on), DRAIN−TO SOURCE−RESISTANCE (W)
0.08
ID = 4.2 A
TJ = 25°C
0.07
0.06
0.05
0.04
0.03
0.02
0
2
4
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
0.05
TJ = 25°C
0.04
VGS = 2.5 V
VGS = 2.7 V
0.03
VGS = 4.5 V
0.02
0.01
0
Figure 3. On−Resistance versus
Gate−To−Source Voltage
2
4
6
8
ID, DRAIN CURRENT (AMPS)
10
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
10,000
1.6
VGS = 0 V
ID = 4.2 A
VGS = 4.5 V
1.4
1.2
1
TJ = 150°C
1000
TJ = 125°C
0.8
0.6
−50
2.5
Figure 2. Transfer Characteristics
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO SOURCE−RESISTANCE (W)
Figure 1. On−Region Characteristics
1
1.5
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
100
150
2
Figure 5. On−Resistance Variation with
Temperature
4
6
8
10
12
14
16
18
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 6. Drain−To−Source Leakage Current
versus Voltage
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3
NTMS4N01R2
2500
VDS = 0 V VGS = 0 V
C, CAPACITANCE (pF)
Ciss
TJ = 25°C
2000
1500
Crss
1000
Ciss
500
Coss
Crss
0
8
6
4
2
0
2
VGS VDS
4
6
8
10
12
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
20
QT
VGS
4
16
VDS
3
12
Q1
Q2
8
2
ID = 4.2 A
TJ = 25°C
1
4
0
0
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
1000
VDD = 10 V
ID = 2.1 A
VGS = 4.5 V
t, TIME (ns)
t, TIME (ns)
VDD = 10 V
ID = 4.2 A
VGS = 4.5 V
td(off)
tf
tr
100
tf
100
td(off)
tr
td(on)
td(on)
10
10
1
10
100
1
10
100
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
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4
NTMS4N01R2
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
100
VGS = 0 V
TJ = 25°C
ID , DRAIN CURRENT (AMPS)
IS, SOURCE CURRENT (AMPS)
4
3
2
1
0
10
0.4
0.5
0.6
0.7
0.8
100 ms
1.0 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
0.1
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz.
Cu 0.06″ thick single sided), 10s max.
0.01
0.3
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.9
0.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 13. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Normalized to qja at 10s.
Chip
0.0022 W
0.0210 W
0.2587 W
0.7023 W
0.6863 W
0.0020 F
0.0207 F
0.3517 F
3.1413 F
108.44 F
0.01
SINGLE PULSE
Ambient
0.001
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
Figure 14. Thermal Response
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5
1.0E+01
1.0E+02
1.0E+03
NTMS4N01R2
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
0.25 (0.010)
S
B
M
Y
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
STYLE 13:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
N.C.
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
NTMS4N01R2/D