MAXIM MAX17085B

19-5135; Rev 0; 1/10
TION KIT
EVALUA BLE
IL
AVA A
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
The MAX17085B is an all-in-one notebook power solution
integrating a multichemistry battery charger, dual fixedoutput Quick-PWMK step-down controllers, and dual
keep-alive linear regulators:
Features
S All-in-One Charger Plus Dual Main Step-Down
Controllers
S 5V/100mA and 3.3V/50mA LDO Regulators
Charger: The high-frequency (~1.4MHz) multichemistry battery charger uses a current-mode, fixed
inductor current ripple architecture that significantly
reduces component size and cost. Low-offset sense
amplifiers allow the use of low-value sense resistors
for charging and input current limit.
S Main
Dual Quick-PWM with Fast Transient Response
and Extended On-Time
300kHz to 800kHz Switching Frequency
Fixed 5V and 3.3V SMPS Outputs
Low-Noise Ultrasonic Mode
Autoretry Fault Protection
The charger uses n-channel switching MOSFETs.
Adjustable charge current, charge voltage, and cell
selection allow for flexible use with different battery
packs. Charge current is set by an analog control input,
or a PWM input. High-accuracy current-sense amplifiers provide fast cycle-by-cycle current-mode control to
protect against short circuits to the battery and respond
quickly to system load transients. Additionally, the charger provides a high-accuracy analog output that is proportional to the adapter current.
S Charger
High Switching Frequency (1.4MHz)
Selectable 2-, 3-, and 4-Cell Battery Voltage
Automatic Selection of System Power Source
Internal Charge-Pump for Adapter n-Channel
MOSFETs Drive
Q0.4% Accurate Charge Voltage
Q2.5% Accurate Input Current Limiting
Q3% Accurate Charge Current
An integrated charge pump controls an n-channel
adapter selector switch. The charge pump remains
active even when the charger is off. When the adapter
is absent, a p-channel MOSFET selects the battery.
Main SMPS: The dual Quick-PWM step-down controllers with synchronous rectification generate
the 5V and 3.3V main power in a notebook. Lowside MOSFET sensing provides a simple low-cost,
highly efficient valley current-limit protection. The
MAX17085B also includes output undervoltage, output overvoltage, and thermal-fault protection.
Separate enable inputs for each SMPS and a combined open-drain power-good output allow flexible power sequencing. Voltage soft-start reduces
inrush current, while passive shutdown discharges
the output through an internal switch. Fast transient
response, with an extended on-time feature reduces
output capacitance requirements. Selectable pulseskipping mode and ultrasonic mode improve lightload efficiency. Ultrasonic mode operation maintains
a minimum switching frequency at light loads, minimizing audible noise effects.
Dual LDO Regulators: An internal 5V/100mA LDO5 with
switchover can be used to either generate the 5V bias
needed for power-up or other lower power “always-on”
suspend supplies. Another 3.3V/50mA LDO3 provides
“always-on” power to a system microcontroller.
S Monitor Outputs for
AC Adapter Current (Q2% Accuracy)
Battery Discharge Current (Q2% Accuracy)
AC Adapter OK
S Analog/PWM (100Hz to 500kHz) Adjustable
Charge Current Setting
S AC Adapter Overvoltage and Overcurrent
Protection
Applications
Notebook Computers
PDAs and Mobile Communicators
5V and 3.3V Supplies
2-to-4, Li+-Cell, Battery-Powered Devices
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE
MAX17085BETL+
-40°C to +85°C
40 TQFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
Pin Configuration appears at end of data sheet.
Quick-PWM is a trademark of Maxim Integrated Products, Inc.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
MAX17085B
General Description
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
ABSOLUTE MAXIMUM RATINGS (Note 1)
TON, DCIN, CSSP, BATT, CSIP to GND,
LX_ to GND.........................................................-0.3V to +28V
CSIP to CSIN, CSSP to CSSN...............................-0.3V to +0.3V
LDO3, LDO5, VCC to GND (Note 2)........................-0.3V to +6V
ISET, VCTL, ACIN, ACOK to GND...........................-0.3V to +6V
OUT3, OUT5 to GND (Note 2).................................-0.3V to +6V
ON3, ON5, PGOOD to GND....................................-0.3V to +6V
ILIM3, ILIM5, SKIP, REF to GND............... -0.3V to (VCC + 0.3V)
GND to EP.............................................................-0.3V to +0.3V
DL_ to EP................................................-0.3V to (VLDO5 + 0.3V)
BST_ to GND..........................................................-0.3V to +34V
BST_ to LDO5.........................................................-0.3V to +28V
DH3 to LX3............................................. -0.3V to (VBST3 + 0.3V)
BST3 to LX3..............................................................-0.3V to +6V
DH5 to LX5............................................. -0.3V to (VBST5 + 0.3V)
BST5 to LX5..............................................................-0.3V to +6V
DHC to LXC............................................ -0.3V to (VBSTC + 0.3V)
PDSL to GND........................................................-0.3V to + 36V
BSTC to LXC............................................................-0.3V to +6V
CELLS, CC, IINP to GND.......................-0.3V to (VLDO5 + 0.3V)
LDO_ Short Circuit to GND........................................ Momentary
LDO5 Current (Internal Regulator) Continuous.............. +100mA
LDO3 Current (Internal Regulator) Continuous................ +50mA
LDO_ Current (Switched Over) Continuous................... +200mA
Continuous Power Dissipation (TA = +70NC)
40-Pin Thin QFN (derate 34.5mW/NC above +70NC).2857mW
Operating Temperature Range........................... -40NC to +85NC
Junction Temperature......................................................+150NC
Storage Temperature Range............................. -65NC to +150NC
Soldering Temperature (reflow).......................................+240NC
Note 1: Absolute Maximum Ratings valid using 20MHz bandwidth limit.
Note 2: LDO5 has a weak leakage to VCC when LDO5 is more than 0.5V above VCC. OUT5 has a weak leakage to VCC when
OUT5 is more than 0.5V above VCC.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
3
6
1.5
2.5
1.5
2.5
1.2
2.2
0.1
2
UNITS
INPUT SUPPLIES
Adapter Present Quiescent
Current
Charging
IDCIN + ICSSP + ICSSN,
enabled
ON3 = ON5 = SKIP = VCC,
VOUT3 = 3.5V, VOUT5 = 5.3V Charging
disabled
Adapter Absent Quiescent
Current
VISET = 2.4V,
IDCIN + ICSSP + ICSSN,
IINP ON
ON3 = ON5 = SKIP = VCC,
VOUT3 = 3.5V, VOUT5 = 5.3V VISET = GND
CSSN Input Current
VCSSP = VCSSN = 24V, TA = +25°C
BATT + CSIP + CSIN + LXC
Input Current
VBATT = 16.8V, adapter absent, TA = +25°C
DCIN Input Current
IDCIN
DCIN Standby Supply Current
VCC Supply Current
DCIN Input Voltage Range
ICC
mA
4
mA
FA
FA
VBATT = 2V to 19V, adapter present
200
650
ON3 = ON5 = SKIP = VCC, charger
disabled; VOUT3 = 3.5V, VOUT5 = 5.3V
0.1
0.2
mA
DCIN = 5V to 24V, ON3 = ON5 = GND
130
270
FA
ON3 = ON5 = SKIP = VCC, charger
disabled; VOUT3 = 3.5V, VOUT5 = 5.3V
1.0
1.5
mA
24
V
Note: LDO5 is NOT guaranteed to be in
regulation until DCIN is above 6V.
4.5
2 _______________________________________________________________________________________
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
DCIN Undervoltage-Lockout
Trip Point for Charger
VDCIN(UVLO)
DCIN POR Threshold
VCC Undervoltage Lockout
Threshold
CONDITIONS
VDCIN falling
MIN
TYP
7.0
7.2
VDCIN rising
7.7
VDCIN(POR)
Falling edge of DCIN
2.0
VCC(UVLO)
Falling edge of VCC, PWM disabled below
this threshold
VCC POR Threshold
3.8
4.0
Rising edge of VCC
4.2
Falling edge of VCC
1.5
MAX
7.9
UNITS
V
V
4.3
V
V
LINEAR REGULATORS
VLDO5
DCIN = 6V to 24V, ON5 = ON3 = GND
0mA < ILDO5 < 100mA, ON5 = GND
4.90
5.00
5.10
VLDO3
LDO5 = 5V, ILDO5 = 0
0mA < ILDO3 < 50mA, ON3 = GND
3.23
3.30
3.37
VLDO5
Not production tested
4.4
4.5
4.6
VLDO3
Not production tested
2.7
2.8
2.9
LDO_ Output-Voltage Accuracy
Internal LDO Voltage After
Switchover
V
V
LDO3 Short-Circuit Current
LDO3 = GND
50
130
mA
LDO5 Short-Circuit Current
LDO5 = GND
100
260
mA
LDO5 Bootstrap Switch
Resistance
LDO5 to OUT5, VOUT5 = 5V, ILDO5 = 50mA
1.0
2.5
I
LDO3 Bootstrap Switch
Resistance
LDO3 to OUT3, VOUT3 = 3.3V,
ILDO3 = 50mA
1.5
3
I
Thermal-Shutdown Threshold
tSHDN
Hysteresis = 50NC
VREF
IREF = 50FA
+160
NC
REFERENCE
REF Output Voltage
REF Undervoltage-Lockout
Threshold
VREF_UVLO
2.09
REF falling
2.10
2.11
2.0
V
V
MAIN SMPS
OUT5 Output Voltage Accuracy
VOUT5
IN = 6V to 28V, SKIP = REF
5.033
5.083
5.135
V
OUT3 Output Voltage Accuracy
VOUT3
IN = 6V to 28V, SKIP = REF
3.267
3.300
3.333
V
Load Regulation Error
Either SMPS, SKIP = 2V, ILOAD = 0 to 5A
-0.1
Either SMPS, SKIP = GND, ILOAD = 0 to 5A
-1.7
Either SMPS, SKIP = VCC, ILOAD = 0 to 5A
Line Regulation Error
DH5 On-Time
-1.5
Either SMPS, IN = 6V to 28V
tON5
RTON = 549kI
(300kHz + 10%)
IN = 12V,
VOUT5 = 5.0V (Note 3) RTON = 202kI
(800kHz + 10%)
%
0.005
%/V
1073
1263
1452
402
473
545
ns
_______________________________________________________________________________________ 3
MAX17085B
ELECTRICAL CHARACTERISTICS (continued)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
DH3 On-Time
tON3
Minimum Off-Time
tOFF(MIN)
Extended On-Time Blanking
RTON = 549kI
(300kHz - 10%)
IN = 12V,
VOUT3 = 3.3V (Note 3) RTON = 202kI
(800kHz - 10%)
(Note 3)
MIN
TYP
MAX
866
1019
1171
tSS
325
382
439
210
270
330
300
360
Rising edge on ON_
fSW(USONIC) SKIP = GND
UNITS
ns
Duty cycle > 50%; not for production test
Soft-Start Time
Ultrasonic Operating Frequency
CONDITIONS
ns
ns
2
ms
15
22
kHz
13
16
MAIN SMPS FAULT DETECTION
OUT_ Overvoltage Trip
Threshold (PGOOD Pulled Low
Above This Level)
OUT_Overvoltage Fault
Propagation Delay
With respect to error comparator threshold
tOVP
OUT_ Undervoltage Protection
Trip Threshold
OUT_ Output Undervoltage
Fault Propagation Delay
With respect to error comparator threshold
65
tPGOOD
70
-350
OUT5 or OUT3 forced 50mV beyond
PGOOD trip threshold, falling edge
-250
IPGOOD
75
PGOOD high impedance, SMPS in
regulation, PGOOD forced to 5.5V,
TA = +25°C
Fault Reset Timer
7
%
Fs
-150
10
PGOOD low impedance, ON5 = ON3 =
GND, ISINK = 4mA
%
Fs
10
With respect to error comparator threshold,
falling edge, hysteresis = 15mV
PGOOD Output Low Voltage
PGOOD Leakage Current
10
tUVP
PGOOD Lower Trip Threshold
PGOOD Propagation Delay
FB_ forced 50mV above trip threshold
19
mV
Fs
0.3
V
1
FA
10
ms
MAIN SMPS CURRENT LIMIT
ILIM_ Adjustment Range
ILIM_ Leakage Current
Valley Current-Limit Threshold
(Adjustable)
TA = +25°C
VLIM_ (VAL)
Ultrasonic Negative
Current-Limit Threshold
INEG(US)
Current-Limit Threshold
(Zero Crossing)
VZX
VAGND - VLX_
0.2
2.1
V
-0.1
+0.1
FA
VILIM_ = 0.5V
40
50
60
VILIM_ = 1.00V
87
100
113
VILIM_ = 2.10V
184
210
236
VAGND - VLX_, SKIP = VCC or GND,
VILIM = 1V
mV
72
mV
1.5
mV
4 _______________________________________________________________________________________
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAIN SMPS INPUTS AND OUTPUTS
SKIP Threshold Voltage
VSKIP
SKIP Leakage Current
VSKIP = 0 or 5V, TA = +25°C
High (SMPS on)
ON_ Input Logic Levels
2.3
1.5
0
-2
VCC
1.9
0.8
+2
2.4
Low (SMPS off)
ON_ Leakage Current
OUT_ Discharge-Mode
On-Resistance
High = SKIP
Mid = PWM
Low = ultrasonic
RDSCHG
0.8
VON3 = VON5 = 0 or 5V, TA = +25°C
-2
ON_ = GND
7.5
V
FA
V
+2
FA
20
50
I
BST3 - LX3 and BST5 - LX5 forced to 5V;
high state
1.6
3.8
BST3 - LX3 and BST5 - LX5 forced to 5V; low
state
1.6
3.8
DL3, DL5; high state
1.5
3.5
DL3, DL5; low state
0.6
1.5
SMPS GATE DRIVERS
DH3, DH5 Gate Driver
On-Resistance
RDH3, RDH5
DL3, DL5 Gate Driver
On-Resistance
RDL3, RDL5
DH3, DH5 Gate Driver Source/
Sink Current
DL3, DL5 Gate Driver
Source Current
IDH
I
DH3, DH5 forced to 2.5V,
BST3 - LX3 and BST5 - LX5 forced to 5V
I
2
A
1.7
A
DL3, DL5 forced to 2.5V
3.3
A
High state, IDHC = 10mA
1.5
3
Low state, IDHC = -10mA
0.8
2.1
High state, IDLC = 10mA
3
6
Low state, IDLC = -10mA
3
6
IDL(SOURCE) DL3, DL5 forced to 2.5V
DL3, DL5 Gate Driver
Sink Current
IDL(SINK)
DHC Gate Driver OnResistance
RDHC
DLC Gate Driver
On-Resistance
RDLC
Internal BST_ Switch
On-Resistance
RBST
IBST_ = 10mA, VDD = 5V
5
BST_ Leakage Current
IBST
VBST_ = 24V, OUT3 and OUT5 above
regulation threshold, TA = +25°C
2
20
FA
35
40
ns/V
I
I
I
CHARGER SMPS
DHC Off-Time K Factor
Sense Voltage for Minimum
Discontinuous Mode Ripple
Current
Zero Crossing Comparator
Threshold
Cycle-by-Cycle Current- Limit
Sense Voltage
VDCIN = 19V, VBATT = 10V
30
VCSIP - VCSIN
5
mV
VCSIP - VCSIN
10
mV
VCSIP - VCSIN
120
125
130
mV
_______________________________________________________________________________________ 5
MAX17085B
ELECTRICAL CHARACTERISTICS (continued)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
CHARGE-VOLTAGE REGULATION
CELLS = open, VCTL = REF, 2 cells
-0.5
+0.5
CELLS = GND, VCTL = REF, 3 cells
-0.5
+0.5
CELLS = LDO3, VCTL = REF, 4 cells
-0.5
+0.5
VCTL Range
CELLS = open, 2 cells
1.0
3.5
V
VCTL Input Bias Current
VCTL = GND or VCTL = REF, TA = +25°C
-1
Battery-Regulation Voltage
Accuracy
VBATT
CELLS 3-Cell Threshold
CELLS 2-Cell Level
CELLS = open
1.9
CELLS 4-Cell Threshold
2.1
+1
FA
0.8
V
2.3
V
2.8
CELLS Input Bias Current
%
V
CELLS = GND or CELLS = 3.6V, TA = +25°C
-2
+2
FA
ISET Range
Charging current, analog setting
0
REF
V
Full-Charge-Current Accuracy
(CSIP to CSIN)
VCSI
VBATT = 4V to
16.8V
Trickle Charge-Current
Accuracy
VCSI
CHARGE-CURRENT REGULATION
VISET = REF, or
PWM = 100%
VISET = 0.6 x REF, or
PWM = 60%
VBATT = 4V to 16.8V, VISET = REF/36 or
PWM = 2.7%
Charge-Current Gain Error
Based on VISET = REF and VISET = 0.6 x
REF
Charge-Current Offset Error
CSIP/CSIN/BATT
Input-Voltage Range
97
100
103
57.6
60.0
62.4
1.25
2.70
4.30
mV
-1.5
+1.5
%
-1.4
+1.4
mV
0
24
V
-0.2
+0.2
FA
4
FA
mV
CSIP Leakage Current
VCSIP = VCSIN = 24V, TA = +25°C
CSIN Leakage Current
VCSIP = VCSIN = 24V, TA = +25°C
1
ISET Power-Down Mode
Threshold
ISET falling
20
26
32
ISET rising
32
38
46
VISET-SDN
ISET Input Bias Current
VISET = REF/2 and VISET = REF, TA = +25°C
+0.15
ISET rising
ISET PWM Threshold
ISET Frequency
-0.15
ISET falling
fISET
ISET Effective Resolution
2.4
0.8
0.128
fISET = 100kHz
500
8
mV
FA
V
kHz
Bit
INPUT SOURCE-CURRENT REGULATION
Input Source Current-Limit
Threshold
CSSP/CSSN
Input-Voltage Range
VCSS
VCSSP - VCSSN
58.5
61.5
mV
-2.5
60.0
+2.5
%
5
26
V
6 _______________________________________________________________________________________
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
IINP Current-Sense Amplifier
Voltage Gain
CONDITIONS
GIINP
IINP Output-Voltage Range
IINP Accuracy
MIN
TYP
MAX
UNITS
59.1
60.0
60.9
V/V
V
0
4
VCSSP - VCSSN = 60mV
-2
+2
VCSSP - VCSSN = 40mV
-3
+3
VCSSP - VCSSN = 20mV
-4
+4
%
IINP Gain Error
Measured at VCSSP - VCSSN = 60mV and
VCSSP - VCSSN = 20mV
-1.25
+1.25
%
IINP Offset Error
Measured at VCSSP - VCSSN = 60mV and
VCSSP - VCSSN = 20mV
-0.6
+0.6
mV
ADAPTER OVERCURRENT (ACOC) DETECTION
ACOCP Threshold
VCSIN-OCP
78
With respect to VCSSP _VCSSN
mV
130
%
16
ms
0.6
s
ACIN, ACOK, AND ACOV
ACIN Rising Debounce
44
ms
ACIN Falling Delay
10
ACOCP Blanking Time
When ACOCP comparator is high and at the
time the blanking time expires
ACOCP Waiting Time
ACIN Input Bias Current
TA = +25°C
ACOK Detect Threshold
VACINOK
Measured at ACIN rising, hysteresis = 40mV
(typ)
ACOV Detect Threshold
VACINOV
Measured at ACIN rising, hysteresis = 40mV
(typ)
ACOK Sink Current
VACOK = 0.4V, VACIN = 1.7V
ACOK Leakage Current
ADAPTER PRESENT DETECTION
VACOK = 5.5V, VACIN = 1.3V, TA = +25°C
-1
1.47
1.50
-2
2.05
Fs
+1
2.10
-2.38
FA
1.53
V
+2
%
2.15
V
+2.38
%
1
mA
1
FA
Adapter Absence
Detect Threshold
VDCIN - VBATT, VDCIN falling
0
100
200
mV
Adapter Detect Threshold
VDCIN - VBATT, VDCIN rising
300
440
600
mV
CHARGE-PUMP MOSFET DRIVER
PDSL Gate-Driver Source
Current
IPDSL-SRC
PDSL Gate-Driver Output
Voltage High
VPDSL-H
VPDSL - VDCIN = 3V, VDCIN = 19V
VDCIN = 19V
VDCIN
+ 5.3
60
FA
VDCIN
+8
V
2.5
kI
+100
mV/cell
PDSL SWITCH CONTROL
PDSL Turn-Off Resistance
RPDSL
Measured from PDSL to GND
BATTERY OVERVOLTAGE
BATT Overvoltage Threshold
VCELL(OV)
VBATT rising, hysteresis = 20mV (typ)
_______________________________________________________________________________________ 7
MAX17085B
ELECTRICAL CHARACTERISTICS (continued)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = -40°C to +85°C, unless
otherwise noted.) (Note 4)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
INPUT SUPPLIES
Adapter Present Quiescent
Current
IDCIN + ICSSP +
ICSSN, ON3 = ON5 =
SKIP = VCC, VOUT3 =
3.5V, VOUT5 = 5.3V
Adapter Absent Quiescent
Current
IDCIN + ICSSP +
ICSSN, ON3 = ON5 =
SKIP = VCC, VOUT3 =
3.5V, VOUT5 = 5.3V
CSSN Input Current
VCSSP = VCSSN = 24V
2
BATT + CSIP + CSIN + LXC Input
Current
VBATT = 16.8V, adapter absent
4
Charging enabled
6
Charging disabled
2.5
VISET = 2.4V,
IINP ON
2.5
VISET = GND
2.2
mA
mA
FA
FA
VBATT = 2V to 19V, adapter present
650
ON3 = ON5 = SKIP = VCC, charger
disabled; VOUT3 = 3.5V, VOUT5 = 5.3V
0.2
mA
DCIN Standby Supply Current
DCIN = 5V to 24V, ON3 = ON5 = GND
300
FA
VCC Supply Current
ON3 = ON5 = SKIP = VCC, charger
disabled; VOUT3 = 3.5V, VOUT5 = 5.3V
1.5
mA
24
V
DCIN Input Current
IDCIN
ICC
DCIN Input-Voltage Range
DCIN Undervoltage-Lockout
Trip Point for Charger
VCC UndervoltageLockout
Threshold
VDCIN(UVLO)
Note: LDO5 is NOT guaranteed to be
regulation until DCIN is above 6V
4.5
VDCIN falling
6.9
VDCIN rising
7.9
Falling edge of VCC, PWM disabled below
this threshold
3.8
4.3
VLDO5
DCIN = 6V to 24V, ON5 = ON3 = GND,
0mA < ILDO5 < 100mA, ON5 = GND
4.85
5.15
VLDO3
LDO5 = 5V, ILDO5 = 0, 0mA < ILDO3 <
50mA, ON3 = GND
3.20
3.40
VCC(UVLO)
V
V
LINEAR REGULATORS
LDO_ Output-Voltage Accuracy
V
LDO3 Short-Circuit Current
LDO3 = GND
130
mA
LDO5 Short-Circuit Current
LDO5 = GND
260
mA
REFERENCE
REF Output Voltage
VREF
IREF = 50FA
2.08
2.12
V
MAIN SMPS
OUT5 Output-Voltage Accuracy
VOUT5
IN = 6V to 28V, SKIP = REF
5.008
5.160
V
OUT3 Output-Voltage Accuracy
VOUT3
IN = 6V to 28V, SKIP = REF
V
DH5 On-Time
tON5
IN = 12V,
VOUT5 = 5.0V (Note
3)
3.25
3.35
RTON = 549kI
(300kHz + 10%)
1073
1452
RTON = 202kI
(800kHz + 10%)
402
545
ns
8 _______________________________________________________________________________________
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = -40°C to +85°C, unless
otherwise noted.) (Note 4)
PARAMETER
SYMBOL
DH3 On-Time
tON3
Minimum Off-Time
tOFF(MIN)
Extended On-Time Blanking
Ultrasonic Operating Frequency
CONDITIONS
IN = 12V,
VOUT3 = 3.3V
(Note 3)
MIN
RTON = 549kI
(300kHz - 10%)
866
RTON = 202kI
(800kHz - 10%)
325
TYP
MAX
1171
ns
(Note 3)
439
330
Duty cycle > 50%; not for production test
fSW(USONIC) SKIP = GND
UNITS
360
13
ns
ns
kHz
MAIN SMPS FAULT DETECTION
OUT_ Overvoltage Trip Threshold
(PGOOD Pulled Low Above this
Level)
With respect to error comparator threshold
12
20
%
OUT_ Undervoltage Protection
Trip Threshold
With respect to error comparator threshold
63
77
%
PGOOD Lower Trip Threshold
With respect to error comparator threshold,
falling edge, hysteresis = 15mV
-350
-150
mV
PGOOD Output Low Voltage
PGOOD low impedance, ON5 = ON3 =
GND, ISINK = 4mA
0.4
V
Fault Reset Timer
Not for production test
7
ms
MAIN SMPS CURRENT LIMIT
ILIM_ Adjustment Range
Valley Current-Limit Threshold
(Adjustable)
0.2
2.1
VILIM_ = 0.5V
40
60
VILIM_ = 1.00V
85
115
VILIM_ = 2.10V
174
246
High = SKIP
2.3
VCC
Mid = PWM
1.5
1.9
Low = ultrasonic
0
0.8
VSKIP = 0 or 5V, TA = +25°C
-2
+2
High (SMPS on)
2.4
VLIM_ (VAL) VAGND - VLX_
V
mV
MAIN SMPS INPUTS AND OUTPUTS
SKIP Threshold Voltage
VSKIP
SKIP Leakage Current
ON_ Input Logic Levels
Low (SMPS off)
0.8
BST3 - LX3 and BST5 - LX5 forced to 5V;
high state
3.8
BST3 - LX3 and BST5 - LX5 forced to 5V;
low state
3.8
DL3, DL5; high state
3.5
DL3, DL5; low state
1.5
V
FA
V
SMPS GATE DRIVERS
DH3, DH5 Gate Driver OnResistance
RDH3,
RDH5
DL3, DL5 Gate-Driver OnResistance
RDL3, RDL5
DHC Gate-Driver On-Resistance
RDHC
I
High state, IDHC = 10mA
3
Low state, IDHC = -10mA
2.1
I
I
_______________________________________________________________________________________ 9
MAX17085B
ELECTRICAL CHARACTERISTICS (continued)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = -40°C to +85°C, unless
otherwise noted.) (Note 4)
PARAMETER
SYMBOL
DLC Gate-Driver On-Resistance
RDLC
CONDITIONS
MIN
TYP
MAX
High state, IDLC = 10mA
6
Low state, IDLC = -10mA
6
UNITS
I
CHARGER SMPS
DHC Off-Time K Factor
VDCIN = 19V, VBATT = 10V
30
40
ns/V
Cycle-by-Cycle Current-Limit
Sense Voltage
VCSIP - VCSIN
120
130
mV
CELLS = open, VCTL = REF, 2 cells
-0.5
+0.5
CELLS = GND, VCTL = REF, 3 cells
-0.5
+0.5
CELLS = LDO3, VCTL = REF, 4 cells
-0.5
+0.5
0
2.4
V
0.8
V
2.3
V
CHARGE-VOLTAGE REGULATION
Battery-Regulation Voltage
Accuracy
VBATT
VCTL Range
CELLS 3-Cell Threshold
CELLS 2-Cell Level
CELLS = open
1.9
CELLS 4-Cell Threshold
2.8
%
V
CHARGE-CURRENT REGULATION
ISET Range
Charging current, analog setting
Full-Charge-Current Accuracy
(CSIP to CSIN)
VCSI
Trickle Charge-Current Accuracy
VCSI
0.0
REF
97
103
57.6
62.4
1.2
4.3
mV
-1.5
+1.5
%
-1.4
+1.4
mV
0
24
V
ISET falling
20
32
ISET rising
32
46
VBATT = 4V to 16.8V
VISET = REF, or
PWM = 100%
VISET = 0.6 x REF,
or PWM = 60%
VBATT = 4V to 16.8V, VISET = REF/36 or
PWM = 2.7%
Charge-Current Gain Error
Based on VISET = REF and
VISET = 0.6 x REF
Charge-Current Offset Error
CSIP/CSIN/BATT Input
Voltage Range
ISET Power-Down Mode
Threshold
VISET-SDN
ISET Frequency
mV
ISET rising
ISET PWM Threshold
ISET falling
fISET
V
2.4
0.8
0.128
10 ��
500
mV
V
kHz
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
(Circuit of Figure 1, no load on LDO5, LDO3, OUT5, OUT3, and REF, VCC = 5V, ON3 = ON5 = VCC, VDCIN = VLXC = VCSSP = VCSSN
= 19V, VBSTC - VLXC = 5V, VBATT = VCSIP = VCSIN = 12.6V, VVCTL = VISET = 1.8V, CELLS = open, TA = -40°C to +85°C, unless
otherwise noted.) (Note 4)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
58.5
61.5
mV
-2.5
+2.5
%
5
26
V
59.9
60.1
V/V
V
INPUT SOURCE-CURRENT REGULATION
Input Source-Current Limit
Threshold
VCSS
VCSSP - VCSSN
CSSP/CSSN Input-Voltage Range
IINP Current-Sense Amplifier
Voltage Gain
GIINP
IINP Output-Voltage Range
IINP Accuracy
0
4
VCSSP - VCSSN = 60mV
-2
+2
VCSSP - VCSSN = 40mV
-3
+3
VCSSP - VCSSN = 20mV
-4
+4
%
IINP Gain Error
Measured at VCSSP - VCSSN = 60mV and
VCSSP - VCSSN = 20mV
-1.5
+1.5
%
IINP Offset Error
Measured at VCSSP - VCSSN = 60mV and
VCSSP - VCSSN = 20mV
-0.65
+0.65
mV
1.47
1.53
V
-2
+2
%
ACIN, ACOK, AND ACOV
ACOK Detect Threshold
VACINOK
Measured at ACIN rising, hysteresis = 40mV
(typ)
ACOV Detect Threshold
VACINOV
Measured at ACIN rising, hysteresis = 40mV
(typ)
2.05
2.15
V
-2.38
+2.38
%
VACOK = 0.4V, VACIN = 1.7V
1
Adapter Absence Detect
Threshold
VDCIN - VBATT, VDCIN falling
0
200
mV
Adapter Detect Threshold
VDCIN - VBATT, VDCIN rising
300
600
mV
ACOK Sink Current
ADAPTER PRESENT DETECTION
mA
CHARGE-PUMP MOSFET DRIVER
PDSL Gate-Driver Output
Voltage High
VPDSL_H
VDCIN = 19V
VDCIN +
5.3
V
Note 3: On-time and off-time specifications are measured from 50% point to 50% point at the DH pin with LX = PGND, VBST = 5V,
and a 500pF capacitor from DH to LX to simulate external MOSFET gate capacitance. Actual in-circuit times may be different due to MOSFET switching speeds.
Note 4: Specifications to TA = -40°C are guaranteed by design and not production tested.
______________________________________________________________________________________ 11
MAX17085B
ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(Circuit of Figure 1, VADP = VSYS = 20V, VBATT = 16.8V, LDO5 = VCC = 5V, LDO3 = 3.3V, TA = +25°C, unless otherwise noted.)
ADAPTER ABSENT, VBATTERY = 13V
-4
-5
-6
-7
-8
ICHARGER = 4A
0.2
0.1
0
ICHARGER = 3A
-0.1
8
6
4
3
1
-0.3
0
30
40
50
60
70
80
BATTERY VOLTAGE (V)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ISET VOLTAGE (V)
CHARGER CURRENT
vs. ISET SETTING (PWM)
CHARGER-VOLTAGE PER CELL
vs. VCTL VOLTAGE
CHARGER-VOLTAGE ERROR
vs. CELL VOLTAGE
4
3
2
VADAPTER = 19V
3-CELL BATTERY
RS2 = 10mI
4A INPUT CURRENT LIMIT
1
0
7.5
8.5
9.5 10.5 11.5 12.5
MAX17085B toc05
6
5
4
3
2
VADAPTER = 19V
3-CELL BATTERY
RS2 = 10mI
1
0
0
10 20 30 40 50 60 70 80 90 100
0.5
1.0
1.5
2.0
2.5
3.0
0.35
MAX17085B toc06
6.5
7
CHARGER VOLTAGE (V)
5
5.5
2-CELL
0.33
CHARGER-VOLTAGE ERROR (%)
4.5
MAX17085B toc04
6
0.31
0.29
3-CELL
0.27
0.25
0.23
0.21
4-CELL
0.19
0.17
0.15
3.0
3.5
3.2
3.4
3.6
3.8
4.0
4.2
4.4
ISET DUTY CYCLE (%)
VCTL VOLTAGE (V)
CELL VOLTAGE (V)
CHARGER SWITCHING FREQUENCY
vs. BATTERY VOLTAGE
CHARGER VOLTAGE ERROR
vs. CHARGER CURRENT
BATTERY REMOVAL (VBATT = 3V)
1.4
1.2
1.0
0.8
0.6
0.4
VADAPTER = 19V
ICHARGER = 3A
3-CELL BATTERY
0.2
0
6
9
MAX17085B toc09
0.25
2-CELL
0.20
BATTERY VOLTAGE (V)
15
27.5V
19V
0.15
PDSL
5V/div
DCIN
5V/div
VBATT
5V/div
3-CELL
0V
0.10
4-CELL
0.05
0
1
2
3
4
5
ILCHG
2A/div
0A
VADAPTER = 19V
4A INPUT CURRENT LIMIT
0
12
MAX17085B toc08
MAX17085B toc07
1.6
3
VADAPTER = 19V
4A INPUT CURRENT LIMIT
VCSSP - VCSSN (mV)
7
0
4-CELL
2
-0.2
20
3-CELL
5
-9
10
2-CELL
7
-10
0
CHARGER CURRENT (A)
ICHARGER = 5A
0.4
0.3
9
CHARGER CURRENT (A)
-3
0.5
CHARGER VOLTAGE ERROR (%)
IINP ERROR (%)
-2
0.6
MAX17085B toc02
VADAPTER = 19V
CHARGER-CURRENT ERROR (%)
MAX17085B toc01
0
-1
CHARGER CURRENT
vs. ISET SETTING (ANALOG)
CHARGER-CURRENT ERROR
vs. BATTERY VOLTAGE
MAX17085B toc03
IINP ERROR vs. SYSTEM CURRENT
(DC SWEEP)
CHARGER SWITCHING FREQUENCY (MHz)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
3-CELL BATTERY
6
100µs/div
CHARGER CURRENT (A)
12 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
SYSTEM LOAD TRANSIENT
(0A 3A 0A )
BATTERY REMOVAL (VBATT = 11V)
MAX17085B toc10
1.5V
CC
1V/div
11V
19V
VBATT
5V/div
DCIN
5V/div
ILCHG
2A/div
0A
CHARGER OUTPUT SHORT CIRCUIT
MAX17085B toc12
MAX17085B toc11
CC
1V/div
VBATT
2V/div
1.5V
12.6V
ISYSLD
2A/div
0A
0V
VBATT
5V/div
0A
ILCHG
2A/div
ILCHG
2A/div
0A
19V ADAPTER INPUT
3-CELL BATTERY, 3A CHARGING CURRENT
3-CELL BATTERY
3-CELL BATTERY
100µs/div
400µs/div
20µs/div
POWER-SOURCE SELECTOR SCHEME
WHEN BATTERY IS PRESENT
(ADAPTER REMOVAL)
POWER-SOURCE SELECTOR SCHEME
WHEN BATTERY IS PRESENT
(ADAPTER INSERTION)
VREF LINE REGULATION
(SWITCHING AND NOT SWITCHING)
VSYSLD
12.6V
10V/div
PDSL
20V/div
0V
PDSL
20V/div
0V
VADAPTER
10V/div
20V
SWITCHING
2.098
2.096
NOT SWITCHING
2.094
2.092
VADAPTER 0V
10V/div
20V ADAPTER INPUT, 3-CELL BATTERY
2.100
VBATT
5V/div
VSYSLD
10V/div
MAX17085B toc15
MAX17085B toc14
VBATT
5V/div 12.6V
REF VOLTAGE (V)
MAX17085B toc13
12.6V
20V
20V ADAPTER INPUT, 3-CELL BATTERY
CHARGER AND SMPSs ARE ALL ON WHEN
SWITCHING, ALL OFF WHEN NOT SWITCHING
2.090
4
10ms/div
10ms/div
8
12
16
20
24
28
INPUT VOLTAGE (V)
CHARGER EFFICIENCY
vs. CHARGING CURRENT
2.104
2.102
2.100
4-CELL
94
92
3-CELL
90
2-CELL
88
MAX17085B toc18
96
EFFICIENCY (%)
REF VOLTAGE (V)
2.106
5.10
MAX17085B toc17
2.108
LDO5 LOAD REGULATION
98
MAX17085B toc16
2.110
5.05
LDO5 VOLTAGE (V)
VREF vs. AMBIENT TEMPERATURE
5.00
4.95
4.90
86
2.098
84
2.096
82
2.094
0
10
20
30
40
50
60
AMBIENT TEMPERATURE (°C)
70
80
0
1
2
3
4
5
6
CHARGING CURRENT (A)
7
VADAPTER = 19V
CHARGER OFF
SMPS5 AND SMPS3 OFF
LDO3 NO LOAD
4.85
VADAPTER = 20V
4A INPUT CURRENT LIMIT
4.80
8
MAX17085B
Typical Operating Characteristics (continued)
(Circuit of Figure 1, VADP = VSYS = 20V, VBATT = 16.8V, LDO5 = VCC = 5V, LDO3 = 3.3V, TA = +25°C, unless otherwise noted.)
0
20
40
60
80
100
120
140
LOAD CURRENT (mA)
______________________________________________________________________________________ 13
Typical Operating Characteristics (continued)
(Circuit of Figure 1, VADP = VSYS = 20V, VBATT = 16.8V, LDO5 = VCC = 5V, LDO3 = 3.3V, TA = +25°C, unless otherwise noted.)
LDO3 LOAD REGULATION
LDO5 vs. AMBIENT TEMPERATURE
3.20
VADAPTER = 19V
CHARGER OFF
SMPS5 AND SMPS3 OFF
3.10
0
10
20
30
3.299
4.986
4.985
4.984
4.983
4.982
50
3.297
3.296
3.295
4.981
3.294
4.980
3.293
3.292
4.979
40
3.298
0
60
10
20
30
40
50
60
70
10
0
80
20
30
40
50
60
70
LOAD CURRENT (mA)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
LDO AND REF POWER-UP
DCIN, LDO AND REF POWER REMOVAL
LDO5 LOAD TRANSIENT
(0mA 100mA 0mA)
MAX17085B toc22
0V
0V
MAX17085B toc24
MAX17085B toc23
19V
DCIN
10V/div
LDO3
2V/div
DCIN
10V/div 0V
3.3V
LDO5
2V/div
5V
LDO3
2V/div
2.1V
LDO5
2V/div
REF
1V/div
0V
80
0V
REF
1V/div
LDO5 (AC)
100mV/div
ILDO5
100mA/div
0A
ON3 = ON5 = GND
2ms/div
2ms/div
4µs/div
LDO3 LOAD TRANSIENT
(0mA 50mA 0mA)
SMPS5 EFFICIENCY vs. LOAD CURRENT
(CHARGER AND SMPS3 ARE OFF)
SMPS5 EFFICIENCY vs. LOAD CURRENT
(CHARGER AND SMPS3 ARE OFF)
100
95
EFFICIENCY (%)
ILDO3
50mA/div
0A
90
20V
85
80
12V
75
7V
70
65
4µs/div
SKIP MODE
90
PWM MODE
85
80
ULTRASONIC MODE
75
70
65
60
60
SKIP MODE
PWM MODE
55
ON3 = ON5 = GND
95
EFFICIENCY (%)
LDO3 (AC)
100mV/div
0V
100
MAX17085B toc26
MAX17085B toc25
MAX17085B toc27
3.15
3.300
LDO3 VOLTAGE (V)
3.25
MAX17085B toc21
4.987
3.30
3.301
MAX17085B toc20
4.988
LDO5 VOLTAGE (V)
3.35
LDO3 vs. AMBIENT TEMPERATURE
4.989
MAX17085B toc19
3.40
LDO3 VOLTAGE (V)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
50
0.01
0.1
1
LOAD CURRENT (A)
55
12V INPUT
50
10
0.01
0.1
1
LOAD CURRENT (A)
14 ��
10
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
85
20V
80
12V
75
70
7V
65
85
80
75
70
65
60
SKIP MODE
PWM MODE
55
0.01
5.10
SKIP MODE
PWM MODE
0.01
10
0.1
1
LOAD CURRENT (A)
12V INPUT
5.00
0.01
0.1
1
SMPS5 STARTUP WAVEFORMS
(SWITCHING REGULATOR)
MAX17085B toc33
MAX17085B toc32
MAX17085B toc31
ULTRASONIC MODE
3.33
10
LOAD CURRENT (A)
SMPS5 STARTUP AND SHUTDOWN LOAD
3.35
3.32
12V INPUT
50
SMPS3 OUTPUT vs. LOAD CURRENT
3.34
ULTRASONIC MODE
ULTRASONIC MODE
55
10
0.1
1
LOAD CURRENT (A)
5.15
5.05
60
50
OUTPUT VOLTAGE (V)
PWM MODE
MAX17085B toc30
90
EFFICIENCY (%)
90
SKIP MODE
95
SMPS5 OUTPUT vs. LOAD CURRENT
5.20
OUTPUT VOLTAGE (V)
95
EFFICIENCY (%)
100
MAX17085B toc28
100
SMPS3 EFFICIENCY vs. LOAD CURRENT
(CHARGER AND SMPS5 ARE OFF)
MAX17085B toc29
SMPS3 EFFICIENCY vs. LOAD CURRENT
(CHARGER AND SMPS5 ARE OFF)
MAX17085B
Typical Operating Characteristics (continued)
(Circuit of Figure 1, VADP = VSYS = 20V, VBATT = 16.8V, LDO5 = VCC = 5V, LDO3 = 3.3V, TA = +25°C, unless otherwise noted.)
ON5
5V/div
0V
ON5
5V/div
0V
OUT5
2V/div
0V
OUT5
2V/div
0V
PGOOD
5V/div
SKIP MODE
3.31
3.30
PWM MODE
LDO5
0V
200mV/div
0A
5V
3.29
IL5
5A/div
12V INPUT
3.28
0.01
0.1
1
10
2ms/div
400µs/div
SMPS5 LOAD TRANSIENT
(1A 4A 1A)
SMPS3 LOAD TRANSIENT
(1A 4A 1A)
LOAD CURRENT (A)
SMPS5 SHUTDOWN WAVEFORMS
(SWITCHING REGULATOR)
MAX17085B toc34
MAX17085B toc35
IOUT5
2A/div
5V
ON5
5V/div 1A
5V
MAX17085B toc36
IOUT3
2A/div
1A
5V
OUT5
3.3V
100mV/div
OUT3
100mV/div
IL5
2A/div
IL3
2A/div
OUT5
2V/div
5V
PGOOD
5V/div
IL5
0A
5A/div
0A
400µs/div
10µs/div
0A
10µs/div
______________________________________________________________________________________ 15
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Pin Description
PIN
NAME
FUNCTION
1
LX3
Inductor Connection for SMPS3. Connect LX3 to the switched side of the inductor. LX3 is the lower
supply rail for the DH3 high-side gate driver.
2
BST3
Boost Flying Capacitor Connection for SMPS3. Connect to an external capacitor as shown in Figure
1. An optional resistor in series with BST3 allows the DH3 turn-on current to be adjusted. A 4.7ω
resistor is recommended to improve crosstalk between SMPSs.
3
DL3
Low-Side Gate-Driver Output for SMPS3. DL3 swings from PGND to LDO5.
4
OUT3
Output Voltage-Sense Input for SMPS3. OUT3 is an input to the Quick-PWM on-time one-shot
timer. OUT3 also serves as the feedback input for the preset 3.3V, and the discharge path when in
shutdown. When OUT3 is in regulation, LDO3 is internally set to a lower level, and a bypass switch
between OUT3 and LDO3 is enabled.
5
LDO3
3.3V Linear Regulator Output. LDO3 is the output of the 3.3V linear regulator supplied from LDO5.
LDO3 is switched over to OUT3 when SMPS3 is in regulation plus 200Fs. Bypass LDO3 to PGND with
a 4.7FF or greater ceramic capacitor.
6
DCIN
LDO5 Supply Input. Bypass DCIN with a 1FF capacitor to PGND.
7
LDO5
5V Linear Regulator Output. LDO5 provides the power to the MOSFET drivers. LDO5 is the output of the
5V linear regulator supplied from DCIN. LDO5 is switched over to OUT5 when SMPS5 is in regulation
plus 200Fs. Bypass LDO5 to PGND with a 4.7FF or greater ceramic capacitor.
8
OUT5
Output Voltage-Sense Input for SMPS5. OUT5 is an input to the Quick-PWM on-time one-shot timer.
OUT5 also serves as the feedback input for the preset 5V, and the discharge path when in shutdown.
When OUT5 is in regulation, LDO5 is internally set to a lower level, and a bypass switch between
OUT5 and LDO5 is enabled.
9
DL5
Low-Side Gate-Driver Output for SMPS5. DL5 swings from PGND to LDO5.
10
BST5
Boost Flying Capacitor Connection for SMPS5. Connect to an external capacitor as shown in Figure
1. An optional resistor in series with BST5 allows the DH5 turn-on current to be adjusted. A 4.7ω
resistor is recommended to improve crosstalk between SMPSs.
11
LX5
Inductor Connection for SMPS5. Connect LX5 to the switched side of the inductor. LX5 is the lower
supply rail for the DH5 high-side gate driver.
12
DH5
High-Side Gate-Driver Output for SMPS5. DH5 swings from LX5 to BST5.
13
DLC
Low-Side Power MOSFET Driver Output for Charger. Connect to the low-side n-channel MOSFET
gate.
14
BSTC
Boost Flying Capacitor Connection for Charger. Connect a 0.1FF capacitor from BSTC to LXC, and a
Schottky diode from LDO5 to BSTC.
15
LXC
High-Side Driver Source Connection. Connect a 0.1FF capacitor from BSTC to LXC.
16
DHC
High-Side Power MOSFET Driver Output for Charger. Connect to high-side n-channel MOSFET gate.
PGOOD
Open-Drain Power-Good Output for SMPS3 and SMPS5.
PGOOD is low when either SMPS3 or SMPS5 output voltage is more than 250mV (typ) below the
nominal regulation threshold, during soft-start, in shutdown (ON3 = ON5 = GND), and after either
fault latch has been tripped. After the soft-start circuit has terminated, PGOOD becomes high
impedance if the output is in regulation plus 200Fs.
When only one SMPS is active, PGOOD monitors the active SMPS output. When the 2nd SMPS is
started, PGOOD is blanked high-Z during the 2nd SMPS soft-start plus 200Fs, then PGOOD monitors
both SMPS outputs.
17
16 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
PIN
NAME
FUNCTION
AC-Detect Output. This open-drain output is low impedance when ACIN is greater than 1.5V, with a
delay of 44ms. The ACOK output remains high impedance when the MAX17085B is powered down.
Connect a 100kI pullup resistor from LDO3 or LDO5 to ACOK.
18
ACOK
19
CSIN
Output Current-Sense Negative Input
20
CSIP
Output Current-Sense Positive Input. Connect a current-sense resistor from CSIP to CSIN.
21
BATT
Battery Voltage Feedback Input
22
PDSL
Power Source Switch Driver Output. When the adapter is not present or an overvoltage and
overcurrent event is detected, the PDSL output is pulled to GND. Leave PDSL unconnected when it
is not used.
23
CSSN
Input Current-Sense Negative Input
24
CSSP
Input Current Sense for Positive Input. Connect a current-sense resistor from CSSP to CSSN.
Input Current Monitor Output. IINP sources the current proportional to the current sensed across
CSSP and CSSN. The gain from (CSSP - CSSN) to IINP is 60V/V:
25
IINP
VIINP = 60 x (VCSSP - VCSSN)
IINP also monitors the battery-discharge current when the adapter is absent. To monitor the
discharge current, set ISET above the PWM threshold. Pull ISET to GND to disable the IINP batterydischarge current mode.
Trilevel Input for Setting Number of Cells:
U CELLS = open; charge with 2 times the cell voltage programmed at VCTL.
U CELLS = GND; charge with 3 times the cell voltage programmed at VCTL.
U CELLS > 2.8V; charge with 4 times the cell voltage programmed at VCTL.
26
CELLS
27
CC
28
ACIN
AC Adapter Detect Input. ACIN is the input to an uncommitted comparator. The ACIN threshold is
1.7V for ACOK and 2.1V for ACOVP. When the ACIN threshold is above ACOK and below the ACOVP
threshold, then PDSL is enabled.
29
VCTL
Cell Charge Voltage-Control Input. VCTL range is from GND to LDO5. For 4.375V/cell setting,
connect VCTL to REF:
VCELL = 2.083 x VVCTL
30
VCC
Analog Supply Voltage Input. Connect VCC to the system supply voltage with a series 47I resistor,
and bypass to analog ground using a 1FF or greater ceramic capacitor.
Charger Loop-Compensation Point. External compensation node for the charge voltage and input
current-limit loops. Connect a 4.7nF to 47nF capacitor to GND. Typically a 10nF capacitor works for
most applications.
Dual-Mode Input for Setting Maximum Charge Current. In PWM mode, use input frequencies from
128Hz to 500kHz for charge-current setting. If there are no two edges within 20ms, ISET is directly
used as an analog input. In analog mode, charge current is set as follows:
31
ISET
I CHG =
100mV VISET
×
RS2
VREF
Pull ISET to GND to shut down the charger.
32
REF
2.1V Voltage Reference and Device Power-Supply Input. Bypass REF with a 1FF capacitor to GND.
33
GND
Analog Ground
34
ILIM3
Valley Current-Limit Adjustment for SMPS3. The GND - LX3 current-limit threshold is 1/10 the voltage
present on ILIM3 over a 0.2V to 2.1V range.
35
ILIM5
Valley Current-Limit Adjustment for SMPS5. The GND - LX5 current-limit threshold is 1/10 the voltage
present on ILIM5 over a 0.2V to 2.1V range.
______________________________________________________________________________________ 17
MAX17085B
Pin Description (continued)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Pin Description (continued)
PIN
NAME
36
SKIP
FUNCTION
Pulse-Skipping Control Input. This tri-level input determines the operating mode for the switching
regulators.
High (VCC) = pulse-skipping mode
Mid (1.8V) = forced-PWM operation
GND = ultrasonic mode
Switching Frequency Setting Input. An external resistor between the input power source and this pin
sets the nominal switching frequency according to the following equation:
fSW(NOM) = 1/(CTON x (RTON + 6.5kI))
37
TON
where CTON = 6pF.
SMPS5 has a switching frequency that is 10% higher than nominal, and SMPS3 has a switching
frequency 10% lower than nominal.
RTON is high impedance when ON3 = ON5 = GND.
38
ON3
Enable Input for SMPS3. Drive ON3 high to enable SMPS3. Drive ON3 low to shut down SMPS3.
39
ON5
Enable Input for SMPS5. Drive ON5 high to enable SMPS5. Drive ON5 low to shut down SMPS5.
40
DH3
High-Side Gate-Driver Output for SMPS3. DH3 swings from LX3 to BST3.
—
EP
Exposed Pad. Internally connected to power ground (PGND). Connect the backside exposed pad to
the system power ground as well.
Standard Application Circuit
The MAX17085B standard application circuit (Figure 1)
features a 4A charger, 8A outputs on SMPS5 and
SMPS3, and a 100mA LDO5 and 50mA LDO3 typical
of most notebook CPU applications. See Table 1 for
component selections. Table 2 lists the component
suppliers.
Table 1. Component Selection for Standard Applications
COMPONENT
SMPS3: 3.3V, 8A, 500kHZ
SMPS5: 5V, 8A, 600kHZ
CHARGER, 16.8V, 4A, 1.2MHZ
Input Voltage
VSYS = 7V to 24V
VSYS = 7V to 24V
VADP = 18V to 20V
Input Capacitor
(2) 10FF, 25V
Taiyo Yuden
TMK432BJ106KM
Murata GRM31CR61E106K
(2) 10FF, 25V
Taiyo Yuden TMK432BJ106KM
Murata GRM31CR61E106K
(2) 4.7FF, 25V
Taiyo Yuden TMK432BJ475KM
Murata GRM31CR71E475M
Output Capacitor
COUT3
(1) 100FF, 6V, 18mI
SANYO 6TPE100MI
COUT5
(1) 100FF, 6V, 18mI
SANYO 6TPE100MI
COUT(CHG)
(1) 4.7FF, 25V
Taiyo Yuden TMK432BJ475KM
Murata GRM31CR71E475M
Inductor
L3
1.5FH, 2.1mI, 11.8A
Sumida CEP125S-1R5
L5
1.5FH, 2.1mI, 11.8A
Sumida CEP125S-1R5
LCHG
2FH, 19mI, 4.5A
Sumida CDR7D28MN-2R0
High-Side MOSFET
NH3
13A, 9.4mI/12mI, 30V
Fairchild FDS6298
NH5
13A, 9.4mI/12mI, 30V
Fairchild FDS6298
NHC
6.6A, 17mI/25mI, 30V
International Rectifier IRF7807D1PBF
Low-Side MOSFET
NL3
13A, 7.2mI/10mI, 30V
Fairchild FDS6670A
NL5
13A, 7.2mI/10mI, 30V
Fairchild FDS6670A
NLC
6.6A, 17mI/25mI, 30V
International Rectifier IRF7807D1PBF
Current-Limit Setting
0.45V (45mV limit)
RILIM3A = 66.5kI
RILIM3B = 82.5kI
0.45V (45mV limit)
RILIM5A = 66.5kI
RILIM5B = 82.5kI
—
18 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Q1a
RS1
15mI
AC ADAPTER VADP
N3
R4
150kI
N4
DCIN
OPEN
GND
5V
2
3
4
RACIN2
28
CREF
1FF
33
23
CSSP
CSSN
5V LDO
ACIN
LXC
DLC
VCTL
26
31
CIN5
2x 10FF
25V
12
NH5
10
CBST5
0.1FF
L5
1.5FH
D5**
RBST5
4.7I
CSIP
GND
9
NL5
8
7
5V LDO
100mA
CLDO5
4.7FF
R1
47I
REF
14
CBSTC
0.1FF
15
DH5
MAX17085B
BATT
BST5
RELEARN
13
NL(CHG)
CNLC
1nF
RS2
10mI
19
DCSIP*
27
RCSIN*
10I
VBATT
BATTERY POWER RAIL
COUT(CHG)
4.7FF
RBATT*
10I
21
25
TON
OUT5
DH3
LX3
DL3
RTON
300kI
37
VSYS
40
LDO5
VCC
BATTERY
SYSTEM CURRENT
MONITOR
CIINP
0.1FF
LX5
DL5
LCHG
2FH
RCSIP*
5I
20
CCC
10nF
BST3
30
CVCC
1.0FF
CC
ISET
CIN(CHG) N5
2 x 4.7FF
NH(CHG)
CELLS
IINP
11
16
REF
CSIN
PWM
SIGNAL
+5V, 8A
24
BSTC
32
COUNT
PDSL
DHC
29
CELLS
22
RACIN1
N4 PROVIDES REVERSE ADAPTER
PROTECTION. REPLACE WITH
DIODE IF REVERSE ADAPTER
PROTECTION IS NOT NEEDED.
COUT5
100FF
VSYS
51.1kI
6
CDCIN
1FF
VSYS
SYSTEM POWER RAIL
C7
10nF
2
1
CIN3
2 x 10FF
25V
NH3
RBST3
4.7I
L3
1.5FH
CBST3
0.1FF
3
NL3
D3**
+3.3V, 8A
COUT3
100FF
RILIM5A
RILIM5B
35
18
ADAPTER OK
17
POWER-GOOD
R2
100kI
3.3V LDO
50mA
OUT3
ILIM5
CLDO3
4.7FF
REF
ACOK
RILIM3A
PGOOD
ILIM3
R3
100kI
5
4
SKIP
LDO3
ON3
ON5
34
36
38
39
RILIM3B
ON OFF
POWER GROUND
ANALOG GROUND
PAD
*COMPONENTS REQUIRED FOR PROTECTION FROM HARD SHORTS ON BATT TO PGND.
**COMPONENTS REQUIRED FOR PROPER OPERATION. DO NOT REMOVE.
Figure 1. Standard Application Circuit
______________________________________________________________________________________ 19
MAX17085B
Q1b
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Table 2. Component Suppliers
SUPPLIER
WEBSITE
AVX Corp.
www.avxcorp.com
Central
Semiconductor Corp.
www.centralsemi.com
Fairchild
Semiconductor
www.fairchildsemi.com
International Rectifier
www.irf.com
KEMET Corp.
SUPPLIER
WEBSITE
Renesas Technology
Corp.
www.renesas.com
SANYO Electric
Co., Ltd.
www.sanyodevice.com
Sumida Corp.
www.sumida.com
Taiyo Yuden
www.t-yuden.com
www.kemet.com
TDK Corp.
www.component.tdk.com
NEC/TOKIN America
www.nec-tokinamerica.com
TOKO America, Inc.
www.tokoam.com
Panasonic Corp.
www.panasonic.com/industrial
Vishay (Dale, Siliconix)
www.vishay.com
Philips/nxp
Semiconductor
www.semiconductors.philips.com
Würth Elektronik
GmbH & Co. KG
www.we-online.com
Pulse Engineering
www.pulseeng.com
Detailed Description
The MAX17085B integrated charger and main stepdown controllers are ideal for notebook applications
where board space and solution cost are key requirements. Together with the integrated, always-on 100mA
LDO5 and 50mA LDO3, the MAX17085B provides a
complete power solution for the notebook in the off-state,
standby-state, and full active state. A functional diagram
of the MAX17085B is shown in Figure 2.
Charger
The MAX17085B uses a new thermally optimized highfrequency architecture that reduces the output capacitance and inductance, resulting in smaller PCB area
and lower cost. The MAX17085B charger includes all
the necessary functions to charge Li+, NiMH, and NiCd
batteries. An all n-channel synchronous-rectified stepdown DC-DC converter is used to implement a precision
constant-current, constant-voltage charger. The charge
current and input current-limit sense amplifiers have lowinput offset errors (200FV typ), allowing the use of smallvalued sense resistors.
Main SMPS
The 5V and 3.3V main SMPSs in the MAX17085B use
Maxim’s Quick-PWM pulse-width modulator, specifically
designed for handling fast load steps while maintaining
a relatively constant operating frequency and inductor
operating point over a wide range of input voltages. The
Quick-PWM architecture circumvents the poor load-transient timing problems of fixed-frequency current-mode
PWMs while also avoiding the problems caused by widely
varying switching frequencies in conventional constanton-time and constant-off-time PWM schemes.
100mA 5V Linear Regulator (LDO5)
and Bias Supply (VCC)
The MAX17085B includes a high-current (100mA),
always-on fixed 5V linear regulator (LDO5). LDO5 is
required to generate the 5V bias supply necessary to
power up the switching regulators, and as the input
supply to the 3.3V linear regulator (LDO3). Once the 5V
switching regulator (SMPS5) is enabled and in regulation, LDO5 is bypassed by an internal switch from OUT5
to LDO5. After switchover, the LDO5 pin can source
200mA. LDO5 starts up as soon as DCIN has valid voltage (around 2.5V), and regulates to ~ 4.5V using an
internal crude reference. REF starts at the same time,
and once REF is in regulation, LDO5 switches over to
use the accurate REF, and regulates up to 5V.
The MAX17085B requires a low-noise 5V bias supply
(VCC) for its internal circuitry. Typically, this 5V bias is
supplied by LDO5 through a lowpass filter. The total supply current required for the MAX17085B is:
IBIAS(MAX) = ICC(MAX) + fSW5QG5 + fSW3QG3 +
fSWCQGC ≈ 45mA to 90mA (typ)
50mA, 3.3V Linear Regulator (LDO3)
A lower current (50mA), always-on fixed 3.3V linear regulator, is also included in the MAX17085B. Once the 3.3V
switching regulator (SMPS3) is enabled and in regulation, LDO3 is bypassed by an internal switch from OUT3
to LDO3. After switchover, the LDO3 pin can source
more than 200mA. LDO3 starts up as soon as REF is in
regulation. This limits the inrush current by sequencing
LDO5 to start before LDO3.
20 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
When VCC drops below the UVLO threshold (falling
edge), the controller stops switching, pulling DH and
DL low. When the 1.5V POR falling edge threshold is
reached, the DL state no longer matters since there is
not enough voltage to force the switching MOSFETs
into a low on-resistance state, so the controller pulls DL
high, allowing a soft discharge of the output capacitors (damped response). However, if the VCC recovers
before reaching the falling POR threshold, DL remains
low until the error comparator has been properly powered up and triggers an on-time.
POR, UVLO
When VCC rises above the power-on reset (POR) threshold, the MAX17085B clears the fault latches and resets
the soft-start circuit, preparing the controller for power-up.
However, the VCC undervoltage-lockout (UVLO) circuitry
inhibits switching until VCC reaches its 4.2V (typ) UVLO
threshold.
CSSP
IINP
BATT
DHC
When DCIN is high enough for LDO5 to be in regulation
and VCC to be above its UVLO, the main SMPS can begin
running. Charger operation requires DCIN to be above its
7.7V UVLO threshold.
CSSN
CURRENTSENSE AMP
PDSL
ON3
CHARGE
PUMP
TOFF
BLOCK
ILIM3
DH3
BST3
SMPS3 DRIVER
BLOCK
DCIN
LX3
ACOV
DL3
SKIP
LDO5
OUT3
BSTC
LXC
DRIVER
DLC
LVC
BLOCK
LDO3
CC
CSIP
CSIN
LDO5
CURRENTSENSE
AMP
OUT5
VBATT
TON
BLOCK
ACIN
VCC
REF
TON
TON ADJUST
VCTL
ACOK
DCIN
LDO5
MAX17085B
ISET
CELLS
LDO3
OUT5
FB
ON5
REF
AC
COMP
DH5
ACOV
BST5
LDO5
SKIP
LX5
DRIVER
DL5
REF
ILIM5
GND
SKIP
OUT5
OUT3
PGOOD
LOGIC
PGOOD
PAD
Figure 2. Functional Diagram
______________________________________________________________________________________ 21
MAX17085B
Thermal-Fault Protection (tSHDN)
The MAX17085B features a thermal fault-protection circuit. When the junction temperature rises above +160NC,
a thermal sensor activates the fault latch, pulls PGOOD
low, enables the 20I discharge circuit, and disables
the controller—DH and DL pulled low. After the junction
temperature cools by 50NC, the controller automatically
restarts. This protects the internal LDO when a sustained
overcurrent or output short circuit occurs.
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Charger Detailed Description
The MAX17085B charger has three regulations loops: a
voltage-regulation loop (CCV) and two current-regulation
loops (CCI and CCS). The loops operate independently
of each other. The CCV voltage-regulation loop monitors
BATT to ensure that its voltage never exceeds the voltage set by VCTL and CELLS. The CCI battery charge
current-regulation loop monitors current delivered to
BATT to ensure that it never exceeds the current limit
set by ISET. The charge current-regulation loop is in
control as long as the battery voltage is below the set
point. When the battery voltage reaches its set point,
the voltage-regulation loop takes control and maintains
the battery voltage at the set point. A third loop (CCS)
takes control and reduces the charge current when
the adapter current exceeds the input current limit. The
CCI current loop is internally compensated while the
CCS and CCV loops are externally compensated with a
capacitor at the CC pin.
The new thermally optimized high-frequency architecture
controls the power dissipation in the high-side MOSFET,
resulting in reduced output capacitance and inductance.
Setting Charge Current (ISET)
The ISET input controls the voltage across current-sense
resistor RS2. ISET can accept either analog or digital
inputs. The full-scale differential voltage between CSIP
and CSIN is 100mV (5A for RS2 = 20mI).
Important: Keep ISET low during the initial power-up of
the MAX17085B. Wait 10ms to allow PDSL to reach its
final voltage before enabling the battery charger.
Analog ISET
When the MAX17085B powers up and the charger is
ready, if there are no two clock edges within 20ms, the
circuit assumes ISET is an analog input, and disables the
PWM filter block. For ISET analog input, set ISET according to the following equation:
I CHG =
The input range for ISET is from 0 to REF. To shut down
the charger, pull ISET below 26mV.
Setting the Charge Voltage
The MAX17085B features separate control inputs to set
the per-cell voltage and the number of cells in series.
The VCTL input sets the per-cell voltage, while the
CELLS input sets the total number of cells in series.
Together, these two inputs set the charge voltage at the
BATT input, providing a flexible way to support different
cell types and different battery-pack configurations.
Setting the Per-Cell Charge Voltage (VCTL)
The MAX17085B supports charge voltages of 4.0V/cell
to 4.4V/cell based on the following equation:
VBATT Cell = 2.083 × VCTL
The dynamic range of the VCTL input is limited, so it
is possible to achieve ±0.5% charge voltage accuracy
using resistive voltage-dividers composed of 1% accurate resistors.
100mV VISET
×
RS2
VREF
VCELL (H) = 2.083 O
VCELL (L) = 2.083 O
VREF O R2
R1 + R2
VREF O R2//R3
R1 + R2//R3
REF
MAX17085B
R1
VCTL
R3
R2
VCTL
CONTROL
Figure 3. VCTL Setting
Table 3. CELLS Pin Setting
Figure 3 shows a simple method to set two different
CELL voltages using a logic output from the embedded
controller.
CELLS PIN
VOLTAGE
CELLS
COUNT
Connecting VCTL to REF = 2.10V, which gives
4.375V/cell.
OPEN
2
Charge with 2 times the cell
voltage programmed at VCTL
GND
3
Charge with 3 times the cell
voltage programmed at VCTL
> 2.8V
4
Charge with 4 times the cell
voltage programmed at VCTL
Setting the Number of Cells (CELLS)
The trilevel CELLS input allows simple switching between
2, 3, and 4 cells in series.
SETTING
22 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
VSTEP =
VREF
= 0.391mV (7.8mA with RS2 = 20mΩ)
256 ⋅ 21
Choose a current-sense resistor (RS2) to have a sufficient power dissipation rating to handle the full-charge
current. The current-sense voltage may be reduced to
minimize the power dissipation period. However, this
may degrade accuracy due to the current-sense amplifier’s input offset (200µV). See the Typical Operating
Characteristics to estimate the charge-current accuracy
at various set points.
Input Source Current
Setting Input Current Limit
The total input current, from a wall adapter or other DC
source, is the sum of the system supply current and
the current required by the charger. When the input
current exceeds the set input current limit, the controller decreases the charge current to provide priority to
system load current. System current normally fluctuates
as portions of the system are powered up or down. The
input-current-limit circuit reduces the power requirement
of the AC wall adapter, which reduces adapter cost. As
the system supply rises, the available charge current
drops linearly to zero. Thereafter, the total input current
can increase without limit. The total input current can be
estimated as follows:
I
× VBATT
IINPUT = ILOAD + CHG
VADP × η
where E is the efficiency of the DC-to-DC converter (typically 85% to 95%).
In the MAX17085B, the voltage across CSSP and CSSN
is constant at 60mV. Choose the current-sense resistor,
RS1, to set the input current limit. For example, for 4A
input current limit choose RS1 = 15mI. For the input
current-limit settings, which cannot be achievable with
standard sense resistor values, use a resistive voltagedivider between CSSP and CSSN to tune the setting.
AC Adapter Overcurrent (ACOC)
When the input current is 1.3 times the input current-limit
setting, PDSL is pulled to GND after a 16ms blanking
time. This turns off the adapter switch and enables the
battery selector switch. After 0.6s, PDSL is reenabled. If
the fault condition persists, the cycle is repeated, until
the third time when the charger is latched off. To clear
the fault latch, remove the adapter and allow DCIN to fall
below its UVLO threshold before reinserting the adapter.
Analog Input Current-Monitor Output
IINP monitors the system-input current, which is sensed
across CSSP and CSSN. The voltage at IINP is proportional to the input current:
VIINP = GIINP × I ADP × RS1
VIINP = 60 × (VCSSP - VCSSN )
where IADP is the DC current supplied by the AC adapter, GIINP is the transconductance of the sense amplifier
(60V/V typ), and RS1 is the resistor connected between
CSSP and CSSN.
When the adapter is absent, drive ISET above 2.1V to
enable IINP during battery discharge.
AC Adapter Detection
(ACIN, ACOK, ACOV)
The ACIN input goes to two internal comparators, one
for adapter detection (ACOK) and another for adapter
overvoltage detection (ACOV). When ACIN is above
1.5V, the open-drain ACOK output becomes low impedance after 44ms.
When ACIN rises above 2.1V, the MAX17085B detects
an ACOV condition and immediately pulls PDSL to GND,
turning off the adapter selection switch and enabling the
battery selector switch. This protects the system rail from
excessively high voltages that might violate the absolute
maximum ratings of the downstream components. Note
that ACOK remains low even when ACIN is above the
ACOV threshold.
Use a resistive voltage-divider from the adapter’s output
to the ACIN pin to set the appropriate detection threshold. Connect a 100kI pullup resistor between LDO3 or
LDO5 and ACOK.
Automatic Power-Source Selection (PDSL)
The MAX17085B integrates a charge pump to drive the
gate of n-channel adapter selector switches (N3 and
Q1a) and the p-channel battery-selector switch (Q1b).
When the adapter is present, PDSL is driven 8V above
VDCIN so that N3 and Q1a are on, and Q1b is off. See
the Operating Conditions section for the definition of
adapter present.
______________________________________________________________________________________ 23
MAX17085B
Digital ISET
If there are two clock edges on ISET within 20ms, the
PWM filter is enabled and ISET accepts digital PWM
input. The PWM filter accepts the digital signal with a
frequency from 128Hz to 500kHz. Zero duty cycle shuts
down the MAX17085B, and the 99% duty cycle corresponds to full scale (100mV) across CSIP and CSIN.
The PWM filter has a DAC with 8-bit resolution that corresponds to equivalent VCSIP - VCSIN steps. Each step is:
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Table 4. Charger Operating Mode Truth Table
DCIN
ADAPTER
PRESENT
(NOTE 5)
INPUT
CURRENT
VCSSP - VCSSN
ACIN
ISET
PDSL
CHARGER
STATE
IINP
COMMENTS
X
No
X
X
< 1V
GND
OFF
OFF
—
X
No
X
X
> 1V
GND
OFF
ON
—
< UVLO
Yes
> OCP threshold
X
X
GND
OFF
ON
—
< UVLO
Yes
X
VACIN > VACINOV
X
GND
OFF
ON
—
< UVLO
Yes
< OCP threshold
VACINOK < VACIN
and
VACIN < VACINOV
X
VDCIN
+ 8V
OFF
ON
—
> UVLO
Yes
X
VACINOK < VACIN
and
VACIN < VACINOV
X
GND
OFF
ON
Adapter
overvoltage fault
> UVLO
Yes
> OCP threshold
X
X
GND
OFF
ON
Adapter
overcurrent fault
> UVLO
Yes
< OCP threshold
VACINOK < VACIN
and
VACIN < VACINOV
< ISET
shutdown
threshold
VDCIN
+ 8V
OFF
ON
ISET shutdown
> UVLO
Yes
< OCP threshold
< ACOV threshold
> ISET
shutdown
threshold
VDCIN
+ 8V
ON
(ISET control)
ON
—
Note 5: Adapter is present when VDCIN - VCSIN > 420mV with VDCIN rising, and absent when VDCIN - VCSIN < 120mV with VDCIN
falling.
When the adapter voltage is removed and the adapter
is absent, the charger is disabled and PDSL is pulled to
GND. N3 and Q1a turn off, and Q1b turns on to supply
power to the system from the battery.
Operating Conditions
Table 4 defines the MAX17085B charger operating conditions.
Charger SMPS
The MAX17085B employs a synchronous step-down
DC-DC converter with an n-channel high-side MOSFET
switch and an n-channel low-side synchronous rectifier.
The charger features a controlled inductor current ripple
architecture, current-mode control scheme with cycleby-cycle current limit. The controller’s off-time (tOFF) is
adjusted to keep the high-side MOSFET junction temperature constant. In this way, the controller switches
faster when the high-side MOSFET has available thermal
capacity. This allows the inductor current ripple and
the output voltage ripple to decrease so that smaller
and cheaper components can be used. The controller
can also operate in discontinuous conduction mode for
improved light-load efficiency.
The operation of the DC-to-DC controller is determined
by the following five comparators as shown in the functional diagram in Figures 2 and 4:
U The IMIN comparator triggers a pulse in discontinuous mode when the accumulated error is too high.
IMIN compares the control signal (LVC) against
5mV (typ) (referred at VCSIP - VCSIN). When LVC is
less than 5mV, DHC and DLC are both forced low.
Indirectly, IMIN sets the peak inductor current in discontinuous mode.
U The CCMP comparator is used for current-mode
regulation in continuous conduction mode. CCMP
compares LVC against the inductor current. The highside MOSFET on-time is terminated when the CSI
voltage is higher than LVC.
U The IMAX comparator provides a secondary cycleby-cycle current limit. IMAX compares CSI to the
current limit programmed at ISET. The high-side
MOSFET on-time is terminated when the currentsense signal exceeds the programmed limit. A new
24 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
U The ZCMP comparator provides zero-crossing detection during discontinuous conduction. ZCMP compares the current-sense feedback signal to 10mV.
When the current-sense signal is lower than the 10mV
threshold, the comparator output is high and DLC is
turned off.
U The OV comparator is used to prevent overvoltage
at the output due to battery removal. OV compares
BATT against the VCTL and CELLS settings. When
BATT is 40mV/cell above the set value, the OV comparator output goes high and the high-side MOSFET
on-time is terminated. DHC and DLC remain off until
the OV condition is removed.
CCV, CCI, CCS, and LVC Control Blocks
The MAX17085B controls input current (CCS control
loop), charge current (CCI control loop), or charge
voltage (CCV control loop), depending on the operating condition. The three control loops—CCV, CCI, and
CCS—are brought together internally at the lowest
voltage clamp (LVC) amplifier. The output of the LVC
amplifier is the feedback control signal for the DC-DC
controller. The minimum voltage at the CCV, CCI, or CCS
appears at the output of the LVC amplifier and clamps
the other control loops to within 0.3V above the control
point. Clamping the other two control loops close to the
lowest control loop ensures fast transition with minimal
overshoot when switching between different control
loops (see the Compensation section). The CCI loop is
compensated internally, while the CCS and CCV loops
are compensated externally using a shared capacitor on
the CC pin.
BDIV
OVP
VCTL + 40mV
CSI
IMAX
VCSI
LIMIT
CCMP
Q
R
DHC
DRIVER
LVC
IMIN
S
Q
5mV
DLC
DRIVER
ZCMP
10mV
CSSP
CSIN
OFF-TIME
ONE-SHOT
OFF-TIME
COMPUTE
Figure 4. Charger Functional Diagram
______________________________________________________________________________________ 25
MAX17085B
cycle cannot start until the IMAX comparator’s output
goes low.
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Continuous Conduction Mode
With sufficiently large charge current, the MAX17085B's
inductor current never crosses zero, which is defined
as continuous conduction mode. The controller starts a
new cycle by turning on the high-side MOSFET and turning off the low-side MOSFET. When the charge-current
feedback signal (CSI) is greater than the control point
(LVC), the CCMP comparator output goes high and the
controller initiates the off-time by turning off the highside MOSFET and turning on the low-side MOSFET. The
operating frequency is governed by the off-time and is
dependent upon VCSIN and VDCIN.
The on-time can be determined using the following equation:
t ON =
L × IRIPPLE
VDCIN - VBATT
where:
V
×t
IRIPPLE = BATT OFF
L
The switching frequency can then be calculated:
fSW =
1
t ON + t OFF
At the end of the computed off-time, the controller initiates a new cycle if the control point (LVC) is greater than
5mV (referred at VCSIP - VCSIN), and the peak charge
current is less than the cycle-by-cycle current limit.
Restated another way, IMIN must be high, IMAX must
be low, and OVP must be low for the controller to initiate
a new cycle. If the peak inductor current exceeds IMAX
comparator threshold or the output voltage exceeds
the OVP threshold, then the on-time is terminated. The
cycle-by-cycle current limit effectively protects against
overcurrent and short-circuit faults.
If during the off-time the inductor current goes to zero,
the ZCMP comparator output pulls high, turning off the
low-side MOSFET. Both the high- and low-side MOSFETs
are turned off until another cycle is ready to begin. ZCMP
causes the MAX17085B to enter into the discontinuous
conduction mode (see the Discontinuous Conduction
section).
Discontinuous Conduction
The MAX17085B can also operate in discontinuous
conduction mode to ensure that the inductor current is
always positive. The MAX17085B enters discontinuous
conduction mode when the output of the LVC control
point falls below 5mV (referred at VCSIP - VCSIN). For
RS2 = 20mI, this corresponds to peak inductor current
to be 250mA.
In discontinuous mode, a new cycle is not started until
the LVC voltage rises above 5mV. Discontinuous mode
operation can occur during a conditioning charge of
overdischarged battery packs, when the charge current
has been reduced sufficiently by the CCS control loop,
or when the charger is in constant-voltage mode with a
nearly full battery pack.
Compensation
The charge voltage, charge current, and input currentlimit regulation loops are compensated separately and
independently. The charge-current limit loop, CCI, is
compensated internally, while the input current limit and
charge-voltage loops, CCS and CCV, are compensated
externally using a shared capacitor at the CC pin. For
most applications, it is sufficient to place a 10nF capacitor from CC to GND.
Main SMPS Detailed Description
The main SMPS of the MAX17085B consists of two independent switching regulators that generate a 3.3V and a 5V
output. The regulators use the Quick-PWM control architecture for simplicity, low pin count, and fast transient response.
An extended on-time feature further improves output voltage
sag for high-duty-cycle applications.
Free-Running Constant-On-Time PWM
Controller with Input Feed-Forward
The Quick-PWM control architecture is a pseudo-fixedfrequency, constant on-time, current-mode regulator with
voltage feed-forward. This architecture relies on the output
filter capacitor’s ESR to act as a current-sense resistor, so
the feedback ripple voltage provides the PWM ramp signal.
The control algorithm is simple: the high-side switch on-time
is determined solely by a one-shot whose pulse width is
inversely proportional to input voltage and directly proportional to output voltage. Another one-shot sets a minimum
off-time (270ns typ). The on-time one-shot is triggered if the
error comparator is low, the low-side switch current is below
the valley current-limit threshold, and the minimum off-time
one-shot has timed out.
On-Time One-Shot
The heart of the PWM core is the one-shot that sets the
high-side switch on-time. This fast, low-jitter, adjustable
one-shot includes circuitry that varies the on-time in
response to battery and output voltage. The high-side
switch on-time is inversely proportional to the battery
voltage as sensed by the TON input, and proportional to
the output voltage:
26 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
tON3 = VOUT3/VSYSTEM x tSW(NOM)/0.9
tSW(NOM) = CTON x RTON + 6.5kI
where CTON = 6pF.
High-frequency (~ 600kHz nominal) operation optimizes
the application for the smallest component size. Efficiency
trade-off due to higher switching losses is not so significant for higher output voltage rails like 5V and 3.3V.
For continuous conduction operation, the actual switching frequency can be estimated by:
fSW =
VOUT + VDIS
t ON(VSYS + VCHG)
where VDIS is the sum of the parasitic voltage drops in
the inductor discharge path, including synchronous rectifier, inductor, and PCB resistances; VCHG is the sum of
the resistances in the charging path, including the highside switch, inductor, and PCB resistances; and tON is
the on-time calculated by the MAX17085B.
Extended On-Time
During heavy load transients, the main SMPS can issue
an extended on-time to increase the inductor current
ramp and reduce output voltage sag, thereby reducing
output capacitance requirement. The extended on-time
feature is ideal for high-duty-cycle conditions where the
voltage across the inductor (VSYS - VOUT) is less than
the output voltage. The extended on-time is twice as long
as the normal on-time. A minimum off-time follows after
each extended on-time.
The extended on-time is allowed when the following conditions are met:
U Inductor valley current at the start of the first on pulse
is less than 50% of the current-limit setting.
Automatic Pulse-Skipping Mode
(SKIP = 3.3V or 5V)
In skip mode (SKIP = 3.3V or 5V), an inherent automatic
switchover to PFM takes place at light loads. This switchover is affected by a comparator that truncates the
low-side switch on-time at the inductor current’s zero
crossing sensed across LX and AGND. In discontinuous
conduction (SKIP = 3.3V or 5V, and IOUT < ILOAD(SKIP)),
the output voltage has a DC regulation level higher than
the error comparator threshold.
Ultrasonic Mode (SKIP = GND)
Forcing SKIP low (SKIP = GND) activates a unique
pulse-skipping mode with a minimum switching frequency of 20kHz. This ultrasonic pulse-skipping mode eliminates audio-frequency modulation that would otherwise
be present when a lightly loaded controller automatically
skips pulses. In ultrasonic mode, the controller automatically transitions to fixed-frequency PWM operation when
the load reaches the same critical conduction point
(ILOAD(SKIP)) that occurs when normally pulse skipping.
An ultrasonic pulse occurs (Figure 5) when the controller detects that no switching has occurred within the
last 45Fs. Once triggered, the ultrasonic circuitry pulls
DL high, turning on the low-side MOSFET. This induces
a negative inductor current. A negative current limit
of 72mV protects against excessive negative currents
when DL is turned on.
After the output drops below the regulation voltage, the
controller turns off the low-side MOSFET (DL pulled low)
and triggers a constant on-time (DH driven high). When
the on-time has expired, the controller reenables the lowside MOSFET until the inductor current drops below the
zero-crossing threshold. Starting with a DL pulse greatly
reduces the peak output voltage when compared to
starting with a DH pulse.
45Fs (typ)
U Greater than 50% duty cycle.
INDUCTOR
CURRENT
Modes of Operation
Forced-PWM Mode (SKIP = 1.8V)
The low-noise forced-PWM mode (SKIP = 1.8V) disables the zero-crossing comparator, which controls the
low-side switch on-time. This forces the low-side gatedrive waveform to constantly be the complement of the
high-side gate-drive waveform, so the inductor current
reverses at light loads while DH maintains a duty factor
of VOUT/VSYS. The benefit of forced-PWM mode is to
keep the switching frequency fairly constant. However,
forced-PWM operation comes at a cost: the no-load 5V
bias current remains between 15mA to 35mA per phase
at 600kHz, depending on the MOSFET selection.
ZERO-CROSSING
DETECTION
0
ON-TIME (tON)
Figure 5. Ultrasonic Waveforms
______________________________________________________________________________________ 27
MAX17085B
tON5 = VOUT5/VSYSTEM x tSW(NOM)/1.1
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Valley Current-Limit Protection
The current-limit circuit employs a unique “valley” current-sensing algorithm that senses the inductor current
through the low-side MOSFET, across LX to AGND. If the
current through the low-side MOSFET exceeds the valley
current-limit threshold, the PWM controller is not allowed
to initiate a new cycle. The actual peak current is greater
than the valley current-limit threshold by an amount
equal to the inductor ripple current. Therefore, the exact
current-limit characteristic and maximum load capability
are a function of the inductor value and battery voltage.
When combined with the UVP, this current-limit method
is effective in almost every circumstance.
Soft-Start and Soft-Shutdown
The MAX17085B includes voltage soft-start and passive
soft-shutdown. During startup, the slew rate control softly
slews the internal target voltage over a 2ms startup period. This long startup period reduces the inrush current
during startup. Startup is always in skip mode regardless
of the SKIP pin setting.
When ON3 or ON5 is pulled low, or the output undervoltage fault latch is set, the regulator immediately forces DL
and DH low, and enables the internal 20I discharge FET
from the OUT pin to GND.
Output Voltage
When the inductor continuously conducts, the
MAX17085B regulates the valley of the output ripple, so
the actual DC output voltage is lower than the slope compensated trip level by 50% of the output ripple voltage.
For PWM operation (continuous conduction), the output
voltage is accurately defined by the following equation:
V
VOUT = VNOM + RIPPLE
2
where VNOM is the nominal feedback voltage and
VRIPPLE is the output ripple voltage (VRIPPLE = ESR
x DIINDUCTOR as described in the Output Capacitor
Selection section).
In discontinuous conduction (IOUT < ILOAD(SKIP)),
the longer off-times allow the slope compensation to
increase the threshold voltage by as much as 1%, so the
output voltage regulates slightly higher than it would in
PWM operation.
Power-Good Output (PGOOD)
PGOOD is the open-drain output that continuously monitors the output voltage for undervoltage and overvoltage
conditions. PGOOD is actively held low when either
output voltage is more than 250mV (typ) below the nominal regulation threshold, during soft-start, in shutdown
(ON3 = ON5 = GND), and after either fault latch has
been tripped. After the soft-start circuit has terminated,
PGOOD becomes high impedance if the output is in
regulation plus 200Fs.
When only one SMPS is active, PGOOD monitors the
active SMPS output. When the 2nd SMPS is started,
PGOOD is blanked high-Z during the 2nd SMPS soft-start
plus 200Fs, then PGOOD monitors both SMPS outputs.
For a logic-level PGOOD output voltage, connect an
external pullup resistor between PGOOD and LDO3. A
100kI pullup resistor works well in most applications.
Fault Protection
The main SMPS features overvoltage and undervoltage
fault protection that shuts down the SMPS. To prevent
false trips from latching off the main SMPS, the fault
latch is automatically reset after approximately 7ms. If
the ON pins are still high, the respective SMPS restarts.
If the fault is still present, the shutdown and restart cycle
repeats. After the 4th time, the latch is permanently set
and requires toggling ON3 or ON5, or pulling VCC below
UVLO to start again.
The charger operation is not affected by the SMPS faults.
Overvoltage Protection (OVP)
When the output voltage rises 16% above the fixed regulation voltage, the controller immediately pulls PGOOD
low, sets the overvoltage fault latch, and immediately
pulls the respective DL high, clamping the output fault to
GND. The nonfaulted side also enters the shutdown state.
Undervoltage Protection (UVP)
When the output voltage drops 30% below the fixed
regulation voltage and the inductor current exceeds the
current limit, the controller immediately pulls PGOOD
low, sets the undervoltage fault latch, and discharges
both SMPS outputs.
28 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
MODE
CONTROLLER STATE
DRIVER STATE
Shutdown (ON_ = High
to Low)
Internal error amplifier target immediately resets to GND.
DL and DH immediately pulled low;
20I output discharge active.
Output UVP (Latched
with 4 Autorestarts)
Internal error amplifier target immediately resets to GND.
After ~ 7ms timeout, the controller restarts if ON_ is still high.
DL and DH immediately pulled low;
20I output discharge active.
Output OVP (Latched
with 4 Autorestarts)
Controller shuts down and the internal error amplifier target
resets to GND.
After ~ 7ms timeout, the controller restarts if ON_ is still high.
DL immediately driven high;
DH pulled low;
20I output discharge active.
Thermal Fault (Latched
with 4 Autorestarts)
SMPS controller disabled (assuming ON_ pulled high). Internal
error amplifier target immediately resets to GND.
After the die temperature falls by ~ 50NC, the controller restarts
if ON_ is still high.
DL and DH pulled low;
20I output discharge active.
VCC UVLO Falling
Edge
SMPS controller disabled (assuming ON_ pulled high), internal
error amplifier target immediately resets to GND.
DL and DH pulled low;
20I output discharge active.
VCC UVLO Rising
Edge
SMPS controller enabled (assuming ON_ pulled high),
controller ramps up the output to the preset voltage.
DL and DH held low and 20I output
discharge active until VCC passes
the UVLO threshold.
VCC POR
SMPS inactive.
DL and DH pulled low;
20I output discharge active.
Charger Design Procedure
Inductor Selection
The selection criteria for the inductor trades off efficiency, transient response, size, and cost. The MAX17085B's
charger combines all the inductor trade-offs in an optimum way using the high-frequency current-mode architecture. High-frequency operation permits the use of a
smaller and cheaper inductor, and consequently results
in smaller output ripple and better transient response.
The charge current, ripple, and operating frequency
(off-time) determine the inductor characteristics. For
optimum efficiency, choose the inductance according to
the following equation:
L CHG =
kVADP 2
4 × LIR MAX × I CHG
where k = 35ns/V.
For optimum size and inductor current ripple, choose
LIRMAX = 0.4, which sets the ripple current to 40% of the
charge current and results in a good balance between
inductor size and efficiency. Higher inductor values
decrease the ripple current. Smaller inductor values
save cost but require higher saturation current capabilities and degrade efficiency.
Inductor LCHG must have a saturation current rating of at
least the maximum charge current plus 1/2 of the ripple
current (DIL):
I SAT = I CHG +
∆IL CHG
2
The ripple current is determined by:
∆IL CHG =
kVADP 2
4 ⋅ L CHG
Output Capacitor Selection
The output capacitor absorbs the inductor ripple current and must tolerate the surge current delivered from
the battery when it is initially plugged into the charger.
As such, both capacitance and ESR are important
parameters in specifying the output capacitor as a filter.
Beyond the stability requirements, it is often sufficient
to make sure that the output capacitor’s ESR is much
lower than the battery’s ESR. Either tantalum or ceramic
capacitors can be used on the output. Ceramic devices
are preferable because of their good voltage ratings and
resilience to surge currents. Choose the output capacitor
based on:
______________________________________________________________________________________ 29
MAX17085B
Table 5. Main SMPS Fault Protection and Shutdown Operation
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
C OUT(CHG) =
IRIPPLE
× k CAP-BIAS
fSW × 8 × DVBATT
where kCAP-BIAS is the derating factor for the capacitor
due to DC voltage bias; kCAP-BIAS is typically 2 for 25V
rated capacitors.
For fSW = 1.2MHz, IRIPPLE = 1A, DVBATT = 70mV, 4.7FF
is the closest common capacitor for COUT(CHG).
If the internal resistance of the battery is close to the ESR
of the output capacitor, the voltage ripple is shared with
the battery, and is less than calculated.
Main SMPS Design Procedure
Firmly establish the input voltage range and maximum
load current before choosing a switching frequency and
inductor operating point (ripple-current ratio). The primary design trade-off lies in choosing a good switching
frequency and inductor operating point, and the following four factors dictate the rest of the design:
U Input Voltage Range: The maximum value (VSYS(MAX))
must accommodate the worst-case, high AC-adapter
voltage. The minimum value (VSYS(MIN)) must account
for the lowest battery voltage after drops due to connectors, fuses, and battery selector switches. If there
is a choice at all, lower input voltages result in better
efficiency.
U Maximum Load Current: There are two values to
consider. The peak load current (ILOAD(MAX)) determines the instantaneous component stresses and filtering requirements and thus drives output capacitor
selection, inductor saturation rating, and the design
of the current-limit circuit. The continuous load current (ILOAD) determines the thermal stresses and thus
drives the selection of input capacitors, MOSFETs,
and other critical heat-contributing components.
U Switching Frequency: This choice determines the
basic trade-off between size and efficiency. The optimal frequency is largely a function of maximum input
voltage due to MOSFET switching losses that are
proportional to frequency and VIN2. The optimum frequency is also a moving target, due to rapid improvements in MOSFET technology that are making higher
frequencies more practical.
U Inductor Operating Point: This choice provides
trade-offs between size vs. efficiency and transient
response vs. output ripple. Low inductor values pro-
vide better transient response and smaller physical
size, but also result in lower efficiency and higher
output ripple due to increased ripple currents. The
minimum practical inductor value is one that causes
the circuit to operate at the edge of critical conduction (where the inductor current just touches zero with
every cycle at maximum load). Inductor values lower
than this grant no further size-reduction benefit. The
optimum operating point is usually found between
20% and 50% ripple current. For high-duty-cycle
applications, select an LIR value of ~ 0.4. When pulse
skipping (SKIP high and light loads), the inductor
value also determines the load-current value at which
PFM/PWM switchover occurs.
Inductor Selection
The switching frequency and inductor operating point
determine the inductor value as follows:
L=
VOUT (VSYS - VOUT )
VSYSfSWILOAD(MAX)LIR
For example: ILOAD(MAX) = 8A, VSYS = 12V, VOUT =
5V, fSW = 600kHz, 40% ripple current or LIR = 0.4:
L=
5V × (12V - 5V)
12V × 600kHz × 8A × 0.4
= 1.5FH
Find a low-loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. Ferrite
cores are often the best choice, although powdered iron
is inexpensive and can work well at 200kHz. The core
must be large enough not to saturate at the peak inductor current (IPEAK):
 LIR 
IPEAK = ILOAD(MAX) 1 +
2 

Most inductor manufacturers provide inductors in standard values, such as 1.0FH, 1.5FH, 2.2FH, 3.3FH, etc.
Also look for nonstandard values, which can provide
a better compromise in LIR across the input voltage
range. If using a swinging inductor (where the no-load
inductance decreases linearly with increasing current),
evaluate the LIR with properly scaled inductance values.
Output Capacitor Selection
Output capacitor selection is determined by the controller stability requirements, and the transient soar and sag
requirements of the application.
30 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
For processor core voltage converters and other applications where the output is subject to violent load transients,
the output capacitor’s size depends on how much ESR is
needed to prevent the output from dipping too low under
a load transient. Ignoring the sag due to finite capacitance:
VSTEP
R ESR ≤
DILOAD(MAX)
In applications without large and fast load transients, the
output capacitor’s size often depends on how much ESR
is needed to maintain an acceptable level of output voltage
ripple. The output voltage ripple of a step-down controller
equals the total inductor ripple current multiplied by the output capacitor’s ESR. Therefore, the maximum ESR required
to meet ripple specifications is:
VRIPPLE
R ESR ≤
ILOAD(MAX)LIR
The actual capacitance value required relates to the physical size needed to achieve low ESR, as well as to the
chemistry of the capacitor technology. Thus, the capacitor
is usually selected by ESR and voltage rating rather than
by capacitance value (this is true of tantalums, OS-CONs,
polymers, and other electrolytics).
When using low-capacity filter capacitors, such as ceramic
capacitors, size is usually determined by the capacity needed to prevent VSAG and VSOAR from causing problems
during load transients. Generally, once enough capacitance
is added to meet the overshoot requirement, undershoot
at the rising load edge is no longer a problem (see the
Transient Response section). However, low-capacity filter
capacitors typically have high ESR zeros that may affect
the overall stability (see the Output Capacitor Stability
Considerations section).
Output Capacitor Stability Considerations
For Quick-PWM controllers, stability is determined by the
value of the ESR zero relative to the switching frequency.
The boundary of instability is given by the following equation:
f
fESR ≤ SW
G
where:
fESR =
1
2 GR ESRC OUT
For a typical 600kHz application, the ESR zero frequency
must be well below 200kHz, preferably below 100kHz.
Tantalum and OS-CON capacitors in widespread use at
the time of publication have typical ESR zero frequencies of 25kHz. In the design example used for inductor
selection, the ESR needed to support 25mVP-P ripple is
25mV/1.2A = 20.8mI. One 220FF/4V SANYO polymer
(TPE) capacitor provides 15mI (max) ESR. This results
in a zero at 48kHz, well within the bounds of stability.
Do not put high-value ceramic capacitors directly across
the feedback sense point without taking precautions to
ensure stability. Large ceramic capacitors can have a
high ESR zero frequency and cause erratic, unstable
operation. Unstable operation manifests itself in two
related but distinctly different ways: double-pulsing and
fast-feedback loop instability. Double-pulsing occurs
due to noise on the output or because the ESR is so
low that there is not enough voltage ramp in the output
voltage signal. This “fools” the error comparator into triggering a new cycle immediately after the 400ns minimum
off-time period has expired. Double-pulsing is more
annoying than harmful, resulting in nothing worse than
increased output ripple. However, it can indicate the
possible presence of loop instability due to insufficient
ESR. Loop instability results in oscillations at the output
after line or load steps. Such perturbations are usually
damped, but can cause the output voltage to rise above
or fall below the tolerance limits.
The easiest method for checking stability is to apply
a very fast zero-to-max load transient and carefully
observe the output voltage ripple envelope for overshoot
and ringing. It can help to simultaneously monitor the
inductor current with an AC current probe. Do not allow
more than one cycle of ringing after the initial stepresponse under/overshoot.
Transient Response
The inductor ripple current also impacts transientresponse performance, especially at low VSYS - VOUT
differentials. Low inductor values allow the inductor current to slew faster, replenishing charge removed from
the output filter capacitors by a sudden load step. This
favors higher switching-frequency operation.
The SMPSs include an extended on-time feature that
reduces the output capacitor requirements due to heavy
load transients. The capacitance required is also a function of the maximum duty factor and can be calculated
from the following equation:
C OUT ≥
(
L DILOAD(MAX)
)
2
K
2VSAGVOUT
______________________________________________________________________________________ 31
MAX17085B
Output Capacitor ESR
The output filter capacitor must have low enough equivalent
series resistance (ESR) to meet output ripple and loadtransient requirements, yet have high enough ESR to satisfy
stability requirements.
Common Design Procedure
The input capacitor and MOSFET selection criteria share
common considerations for the charger and the main
SMPS. For the following sections, VIN is VDCIN for the
charger and VSYS for the main SMPS, VOUT is VBATT for
the charger and VOUT5 or VOUT3 for the main SMPS, and
IOUT is ICHG for the charger and ILOAD for the main SMPS.
100
400kHz
200kHz
600kHz
SCALE FACTOR (K)
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
800kHz
10
Input Capacitor Selection
The input capacitor must meet the ripple-current requirement (IRMS) imposed by the switching currents:
 V

OUT (VIN - VOUT ) 
IRMS = ILOAD 


VIN


1
0.5
0.6
0.7
0.8
DUTY CYCLE
0.9
1.0
Figure 6. Scale Factor vs. Duty Cycle
where K is a function of maximum duty cycle (lowest
input voltage) and switching frequency as shown in
Figure 6.
The amount of overshoot during a full-load to no-load transient due to stored inductor energy can be calculated as:
VSOAR
(DILOAD(MAX) )
≈
2
L
2C OUT VOUT
Setting the Current Limit
The minimum current-limit threshold must be great
enough to support the maximum load current when the
current limit is at the minimum tolerance value. The valley
of the inductor current occurs at ILOAD(MAX) minus half
the ripple current; therefore:
 ILOAD(MAX)LIR 
ILIM(VAL) > ILOAD(MAX) - 

2


where ILIM(VAL) equals the minimum valley current-limit
threshold voltage divided by the current-sense element
(low-side RDSON).
Connect a resistor-divider from REF to ILIM to analog
ground (AGND) to set the adjustable current-limit threshold. The valley current-limit threshold is approximately
1/10 the ILIM voltage over a 0.2V to 2.1V range. The
adjustment range corresponds to a 20mV to 210mV valley current-limit threshold. When adjusting the current
limit, use 1% tolerance resistors to prevent significant
inaccuracy in the valley current-limit tolerance.
For most applications, nontantalum chemistries (ceramic,
aluminum, or OS-CON) are preferred due to their resistance to power-up surge currents typical of systems with
a mechanical switch or connector in series with the input.
In either configuration, choose a capacitor that has less
than 10NC temperature rise at the RMS input current for
optimal reliability and lifetime.
Power-MOSFET Selection
High-Side MOSFET Power Dissipation
The conduction loss in the high-side MOSFET (NH) is
a function of the duty factor, with the worst-case power
dissipation occurring at the minimum input voltage, and
maximum output voltage in the case of the charger:
V
PD COND (HS) = OUT × IOUT 2 × RDS(ON)
VIN
Calculating the switching losses in high-side MOSFET
(NH) is difficult since it must allow for difficult quantifying factors that influence the turn-on and turn-off times.
These factors include the internal gate resistance, gate
charge, threshold voltage, source inductance, and PCB
layout characteristics. The following switching-loss calculation provides only a very rough estimate and is no
substitute for breadboard evaluation, preferably including verification using a thermocouple mounted on NH:
 Q G(SW)  C OSSVIN 2fSW
PD SW (HS) = VINIOUT fSW 
 +
2
 IGATE 
where COSS is the NH MOSFET’s output capacitance,
QG(SW) is the charge needed to turn on the NH MOSFET,
and IGATE is the peak gate-drive source/sink current (2A typ).
The following high-side MOSFET’s loss is due to the reverserecovery charge of the low-side MOSFET’s body diode:
32 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Q RR × VIN × fSW
2
pulled up by the MOSFET’s gate-to-drain capacitance
(CRSS), gate-to-source capacitance (CISS - CRSS). The
following minimum threshold should not be exceeded:
The total high-side MOSFET power dissipation is:
C

VGS(TH) > VIN  RSS 
 CISS 
PD TOTAL (HS) ≈ PD COND (HS) + PD SW (HS) + PD QRR (HS)
The optimum high-side MOSFET trades the switching
losses with the conduction (RDS(ON)) losses over the
input and output voltage ranges. For the charger, the
losses at VOUT(MIN) should be roughly equal to the losses at VOUT(MAX), while for the main SMPS, the losses at
VIN(MIN) should be roughly equal to losses at VIN(MAX).
Low-Side MOSFET Power Dissipation
For the low-side MOSFET (NL), the worst-case power
dissipation always occurs at maximum input voltage:
 V

PD COND (LS) = 1- OUT  × IOUT 2 × RDS(ON)
VIN 

The following additional loss occurs in the low-side
MOSFET due to the body diode conduction losses:
Typically, adding a 4700pF between DL and power
ground (CNL in Figure 7), close to the low-side MOSFETs,
greatly reduces coupling. Do not exceed 22nF of total
gate capacitance to prevent excessive turn-off delays.
Alternatively, shoot-through currents may be caused by
a combination of fast high-side MOSFETs and slow lowside MOSFETs. If the turn-off delay time of the low-side
MOSFET is too long, the high-side MOSFETs can turn on
before the low-side MOSFETs have actually turned off.
Adding a resistor less than 5I in series with BST slows
down the high-side MOSFET turn-on time, eliminating
the shoot-through currents without degrading the turnoff time (RBST in Figure 7). Slowing down the high-side
MOSFET also reduces the LX node rise time, thereby
reducing EMI and high-frequency coupling responsible
for switching noise.
PD BDY (LS) = 0.05IPEAK × 0.4V
The total power low-side MOSFET dissipation is:
MAX17085B
PD TOTAL (LS) ≈ PD COND (LS) + PD BDY (LS)
MOSFET Gate Drivers (DH, DL)
The DH floating high-side MOSFET drivers are powered
by internal boost switch charge pumps at BST, while the
DL synchronous-rectifier drivers are powered directly by
the 5V bias supply (VDD). Adaptive dead-time circuits
monitor the DL and DH drivers and prevent either FET
from turning on until the other is fully off. The adaptive
driver dead time allows operation without shoot-through
with a wide range of MOSFETs, minimizing delays and
maintaining efficiency.
A low-resistance, low-inductance path from the DL and
DH drivers to the MOSFET gates is used for the adaptive
dead-time circuits to work properly; otherwise, the sense
circuitry in the MAX17085B interprets the MOSFET gates
as “off” while charge actually remains. Use very short,
wide traces (50 mils to 100 mils wide if the MOSFET is
1in from the driver).
Applications with high-input voltages, long inductive
driver trace, and fast rising LX edges may have shootthrough currents when the low-side MOSFET gate is
BST
(RBST)*
INPUT (VIN)
CBST
DH
NH
L
LX
LDO5
CBYP
DL
NL
(CNL)*
EP
(RBST)* RECOMMENDED —THE RESISTOR LOWERS EMI BY DECREASING
THE SWITCHING NODE RISE TIME.
(CNL)* OPTIONAL—THE CAPACITOR REDUCES LX-TO-DL CAPACITIVE
COUPLING THAT CAN CAUSE SHOOT-THROUGH CURRENTS.
Figure 7. Gate-Drive Circuit
______________________________________________________________________________________ 33
MAX17085B
PD QRR (HS) =
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Boost Capacitors
The boost capacitors (CBST) selected must be large
enough to handle the gate charging requirements of the
high-side MOSFETs. Select the boost capacitors to avoid
discharging the capacitor more than 200mV while charging the high-side MOSFETs’ gates:
C BST =
N × Q GATE
200mV
where N is the number of high-side MOSFETs used for
one regulator, and QGATE is the gate charge specified
in the MOSFET’s data sheet. For example, assume (1)
FDS6298 n-channel MOSFETs are used on the high side.
According to the manufacturer’s data sheet, a single
FDS6298 has a maximum gate charge of 19nC (VGS
= 5V). Using the above equation, the required boost
capacitance would be:
C BST =
1× 10nC
= 0.05FF
200mV
Selecting the closest standard value, this example
requires a 0.1FF ceramic capacitor.
Applications Information
Setting Charger Input Current Limit
The input current limit should be set based on the current capability of the AC adapter and the tolerance of
the input current limit. The upper limit of the input current
threshold should never exceed the adapter’s minimum
available output current. For example, if the adapter’s
output current rating is 5A P 10%, the input current limit
should be selected so that its upper limit is less than 5A
x 0.9 = 4.5A. Since the input current-limit accuracy of the
MAX17085B is P 2%, the typical value of the input current limit should be set at 4.5A divided by 1.02 ≈ 4.41A.
The lower limit for input current must also be considered.
For chargers at the low end of the specification, the input
current limit for this example could be 4.41A x 0.95 or
approximately 4.19A.
AC Adapter Detection
The minimum adapter voltage threshold is used to calculate the resistor values at ACIN:
VADP(MIN)
R ACIN2
= VACIN-ACOK
R ACIN1 + R ACIN2
where VACIN-ACOK is 1.5V (typ).
To minimize power loss, choose a large value for RACIN1,
and calculate RACIN2.
For example:
VADP(MIN) = 17V
RACIN1 = 249kI
then:
R ACIN2 =
R ACIN1
(VADP(MIN)
)
VACIN - ACOK - 1
= 24.1kΩ
The nearest standard resistor value for RACIN2 is 24.3kI.
The ACOV threshold is then determined by:


R
VADP(OV) = VACIN-ACOV 1 + ACIN1 
 R ACIN2 
where VACIN-ACOV is 2.1V (typ).
Using the values in the example above, VADP(OV) is 23.7V.
Relearn Application
The relearn function is easily implemented in the
MAX17085B by configuring the system to override the
PDSL gate drive to the adapter and battery selector
MOSFETs as shown in Figure 1. The system initiates
the relearn cycle by disabling the adapter selector
MOSFET and enabling the battery selector MOSFET. The
MAX17085B relies on the system to monitor the battery
discharge voltage. When the battery reaches its critical
discharge voltage threshold, the system reenables the
adapter selector MOSFET.
Important: Keep ISET low during the relearn cycle.
When the relearn cycle is completed, release PDSL first,
wait 10ms, then enable charging.
Main SMPS Dropout Performance
The output voltage for continuous-conduction operation is restricted by the nonadjustable minimum off-time
one-shot. For best dropout performance, use the slower
(200kHz) on-time setting. When working with low input
voltages, the duty-factor limit must be calculated using
worst-case values for on- and off-times. Also, keep
in mind that transient response performance of buck
regulators operated too close to dropout is poor, and
bulk output capacitance must often be added (see the
Design Procedure section).
The absolute point of dropout is when the inductor current
ramps down during the minimum off-time (DIDOWN) as
much as it ramps up during the on-time (DIUP). The ratio
h = DIUP/DIDOWN indicates the controller’s ability to slew
the inductor current higher in response to increased load,
and must always be greater than 1. As h approaches 1,
the absolute minimum dropout point, the inductor current
cannot increase as much during each switching cycle,
and VSAG greatly increases unless additional output
capacitance is used.
34 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
VOUT + VCHG
VIN(MIN) =
 h × t OFF(MIN) 
1- 

TSW


NH5
DH5
Dropout Design Example:
VOUT = 5V, fSW = 600kHz, tSW = 1.67Fs, tOFF(MIN) =
250ns, VCHG = 100mV, h = 1:
VIN(MIN) =
5V + 0.1V
= 6V
 1× 250ns 
1- 

 1.67Fs 
Therefore, VIN must be greater than 6V for steady-state
operation. Input transient sags down to 5.5V during an
output load transient are acceptable due to the extended
on-time feature.
Charge Pump
CBST5
0.1FF
L5
5V OUTPUT
BST5
LX5
COUT5
DL5
NL5
OUT5
DX1
where VCHG is the parasitic voltage drop in the charge path
(see the On-Time One-Shot section) and tOFF(MIN) is from
the Electrical Characteristics.
If the calculated VIN(MIN) is greater than the required
minimum input voltage, then operating frequency must
be reduced or output capacitance added to obtain an
acceptable VSAG. If operation near dropout is anticipated,
calculate VSAG to be sure of adequate transient response.
MAX17085B
A reasonable minimum value for h is 1.5 for most normal
regulators. With the extended on-time feature, the minimum h value of 1 can be used. Adjusting this up or down
allows trade-offs between VSAG, output capacitance,
and minimum operating voltage. For a given value of h,
the minimum operating voltage can be calculated as:
C1
10nF
C2
0.1FF
MAX17085B
C3
10nF
12V TO 15V
CHARGE PUMP
C4
0.1FF
R1
100kI
DX2
SKIP
R2
21kI
Figure 8. Charge-Pump Application
best efficiency, yet keep the charge pump output above
a minimum threshold. The minimum charge-pump voltage is:
R1 

VCHG-PUMP(MIN) = 2.1V × 1 +

R2


PCB Layout Guidelines
The MAX17085B provides a simple way to generate
and valley regulate an auxiliary charge pump to provide
a low-power, high-voltage (12V to 15V) supply for load
switch gate drive bias. Figure 8 shows the charge-pump
application circuit. The charge pump is driven by the
DL pin to boost the output to the desired bias voltage
(VCHG-PUMP):
Careful PCB layout is critical to achieving low switching
losses and clean, stable operation. The switching power
stage requires particular attention. If possible, mount all
the power components on the top side of the board, with
their ground terminals flush against one another. Follow
these guidelines for good PCB layout:
VCHG - PUMP ≈ 3 × (5V - VF )
U Keep the high-current paths short, especially at the
ground terminals. This practice is essential for stable,
jitter-free operation.
where VF is the forward voltage drop of the diodes.
Connect a resistor-divider from the high-voltage output
to the SKIP pin as shown in Figure 8. When the voltage
at the SKIP pin drops to 2.1V, which is the typical fallingedge threshold between SKIP mode and forced-PWM
mode, the MAX17085B enters forced-PWM operation,
recharging the bias output. This automatic refresh operation allows the MAX17085B to remain in skip mode for
U Keep the power traces and load connections short
and wide. This practice is essential for high efficiency.
Using thick copper PCBs (2oz vs. 1oz) can enhance
full-load efficiency by 1% or more. Correctly routing
PCB traces is a difficult task that must be approached
in terms of fractions of centimeters, where a single
milliohm of excess trace resistance causes a measurable efficiency penalty.
______________________________________________________________________________________ 35
MAX17085B
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
U Minimize the main SMPS current-sensing errors by
connecting LX3 and LX5 directly to the drain of the
low-side MOSFET. Minimize the charger currentsense resistor trace lengths, and ensure accurate
current sensing with Kelvin connections.
U When trade-offs in trace lengths must be made, it is
preferable to allow the inductor charging path to be
made longer than the discharge path. For example,
it is better to allow some extra distance between the
input capacitors and the high-side MOSFET than to
allow distance between the inductor and the low-side
MOSFET or between the inductor and the output filter
capacitor.
U Route high-speed switching nodes (BST_, LX_, DH_,
and DL_) away from sensitive analog areas (REF,
VCC, and OUT).
U Refer to the MAX17085B evaluation kit for the layout
example.
Layout Procedure
1) Place the power components first, with ground terminals adjacent (NL_ source, CIN, and COUT). If possible, make all these connections on the top layer with
wide, copper-filled areas.
2) Mount the controller IC adjacent to the low-side
MOSFET, preferably on the backside opposite NL_
and NH_ to keep LX_, GND, DH_, and the DL_ gatedrive lines short and wide. The DL_ and DH_ gate
traces must be short and wide (50 mils to 100 mils
wide if the MOSFET is 1in from the controller IC) to
keep the driver impedance low and for proper adaptive dead-time sensing.
3) Group the gate-drive components (BST_ capacitor,
LDO5 bypass capacitor) together near the controller IC.
4) Make the DC-DC controller ground connections as
shown in Figure 1. This diagram can be viewed as
having two separate ground planes: power ground,
where all the high-power components go, and an analog ground plane for sensitive analog components.
The analog ground plane and power ground plane
must meet only at a single point directly at the IC.
5) Connect the output power planes directly to the output filter capacitor positive and negative terminals
with multiple vias. Place the entire DC-DC converter
circuit as close to the load as is practical.
6) Use a single-point star ground placed directly below
the part at the PGND pin. Connect the power ground
(ground plane) and the quiet ground island at this
location.
36 ��
Integrated Charger, Dual Main Step-Down
Controllers, and Dual LDO Regulators
Chip Information
BATT
PDSL
CSSN
CSSP
IINP
CC
CELLS
ACIN
VCTL
TOP VIEW
VCC
PROCESS: BiCMOS
30 29 28 27 26 25 24 23 22 21
ISET 31
20 CSIP
REF 32
19 CSIN
GND 33
18 ACOK
17 PGOOD
ILIM3 34
16 DHC
ILIM5 35
MAX17085B
SKIP 36
15 LXC
TON 37
ON3 38
+
ON5 39
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
14 BSTC
PACKAGE TYPE
PACKAGE CODE
DOCUMENT NO.
13 DLC
40 TQFN-EP
T4055-2
21-0140
12 DH5
11 LX5
LX3
DL3
OUT3
LDO3
6
7
8
9
10
BST5
5
DL5
4
OUT5
3
DCIN
2
LDO5
1
BST3
DH3 40
THIN QFN
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2010
Maxim Integrated Products 37
Maxim is a registered trademark of Maxim Integrated Products, Inc.
MAX17085B
Pin Configuration

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