NUD4001 High Current LED Driver This device is designed to replace discrete solutions for driving LEDs in low voltage AC−DC applications 5.0 V, 12 V or 24 V. An external resistor allows the circuit designer to set the drive current for different LED arrays. This discrete integration technology eliminates individual components by combining them into a single package, which results in a significant reduction of both system cost and board space. The device is a small surface mount package (SO–8). http://onsemi.com PIN CONFIGURATION AND SCHEMATIC Features • • • • Supplies Constant LED Current for Varying Input Voltages External Resistor Allows Designer to Set Current – up to 500 mA Offered in Surface Mount Package Technology (SO−8) Pb−Free Package is Available Vin 1 8 Iout Boost 2 7 Iout Rext 3 6 Iout GND 4 5 Iout Benefits • • • • Maintains a Constant Light Output During Battery Drain One Device can be used for Many Different LED Products Reduces Board Space and Component Count Simplifies Circuit and System Designs Current Set Point Typical Applications • Portables: For Battery Back−up Applications, also Simple Ni−CAD • • Battery Charging Industrial: Low Voltage Lighting Applications and Small Appliances Automotive: Tail Lights, Directional Lights, Back−up Light, Dome Light MARKING DIAGRAM 8 SO−8 CASE 751 STYLE 25 8 1 1 PIN FUNCTION DESCRIPTION 4001 AYWW G Pin Symbol 1 Vin 2 Boost This pin may be used to drive an external transistor as described in the App Note AND8198/D. 4001 A Y WW G 3 Rext An external resistor between Rext and Vin pins sets different current levels for different application needs ORDERING INFORMATION 4 GND Ground 5, 6, 7, 8 Iout Description Positive input voltage to the device The LEDs are connected from these pins to ground = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Device Device Package Shipping † NUD4001DR2 SO−8 2500 / Tape & Reel SO−8 (Pb−Free) 2500 / Tape & Reel NUD4001DR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 6 1 Publication Order Number: NUD4001/D NUD4001 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Continuous Input Voltage Vin 30 V Non−repetitive Peak Input Voltage (t v 1.0 ms) Vp 60 V Output Current (For Vdrop ≤ 2.2 V) (Note 1) Iout 500 mA Output Voltage Vout 28 V Human Body Model (HBM) ESD 1000 V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Vdrop = Vin – 0.7 V − VLEDs. THERMAL CHARACTERISTICS Characteristic Operating Ambient Temperature Maximum Junction Temperature Symbol Value Unit TA −40 to +125 °C TJ 150 °C TSTG −55 to +150 °C PD 1.13 9.0 W mW/°C Thermal Resistance, Junction–to–Ambient (Note 2) RqJA 110 °C/W Thermal Resistance, Junction–to–Lead (Note 2) RqJL 77 °C/W Storage Temperature Total Power Dissipation (Note 2) Derating above 25°C (Figure 3) 2. Mounted on FR−4 board, 2 in sq pad, 2 oz coverage. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Output Current1 (Vin = 12 V, Rext = 2.0 W, VLEDs = 10 V) Iout1 305 325 345 mA Output Current2 (Vin = 30 V, Rext = 7.0 W, VLEDs = 24 V) Iout2 95 105 115 mA Bias Current (Vin = 12 V, Rext = Open, VLEDs = 10 V) IBias − 5.0 8.0 mA Voltage Overhead (Note 3) Vover 1.4 − − V Characteristic 3. Vover = Vin – VLEDs. http://onsemi.com 2 NUD4001 TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise noted) 1000 0.9 0.8 0.7 100 Rext, W Vsense (V) 0.6 10 0.5 0.4 0.3 0.2 0.1 1 1 10 100 0.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 140 155 TJ, JUNCTION TEMPERATURE (°C) 1000 IOUT (mA) Figure 1. Output Current (IOUT) vs. External Resistor (Rext) Figure 2. Vsense vs. Junction Temperature 0.500 1.200 PD, POWER DISSIPATION (W) 0.450 1.000 0.400 PD_control (W) 0.800 0.600 0.400 0.350 0.300 0.250 0.200 0.150 0.100 0.200 0.050 35 45 55 65 75 85 95 105 115 125 0.000 0 5 10 15 20 25 TA, AMBIENT TEMPERATURE (°C) Vin (V) Figure 3. Total Power Dissipation (PD) vs. Ambient Temperature (TA) Figure 4. Internal Circuit Power Dissipation vs. Input Voltage 1.2 OUTPUT CURRENT, NORMALIZED 0.000 25 1.0 0.8 0.6 0.4 0.2 0.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 140 155 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Current Regulation vs. Junction Temperature http://onsemi.com 3 30 NUD4001 APPLICATION INFORMATION Design Guide NUD4001 Vin 1. Define LED’s current: a. ILED = 350 mA Boost 2. Calculate Resistor Value for Rext: a. Rext = Vsense (see Figure 2) / ILED b. Rext = 0.7 (TJ = 25 °C)/ 0.350 = 2.0 W Rext GND 3. Define Vin: a. Per example in Figure 6, Vin = 12 V 1 8 2 7 3 4 Current Set Point 6 5 12 V 4. Define VLED @ ILED per LED supplier’s data sheet: a. Per example in Figure 6, VLED = 3.5 V + 3.5 V + 3.5 V = 10.5 V Figure 6. 12 V Application (Series LED’s Array) 5. Calculate Vdrop across the NUD4001 device: a. Vdrop = Vin – Vsense – VLED b. Vdrop = 12 V – 0.7 V (TJ = 25 °C) – 10.5 V c. Vdrop = 0.8 V 6. Calculate Power Dissipation on the NUD4001 device’s driver: a. PD_driver = Vdrop * Iout b. PD_driver = 0.8 V x 0.350 A c. PD_driver = 0.280 Watts 7. Establish Power Dissipation on the NUD4001 device’s control circuit per Figure 4: a. PD_control = Figure 4, for 12 V input voltage b. PD_control = 0.055 W 8. Calculate Total Power Dissipation on the device: a. PD_total = PD_driver + PD_control b. PD_total = 0.280 W + 0.055 W = 0.335 W 9. If PD_total > 1.13 W (or derated value per Figure 3), then select the most appropriate recourse and repeat steps 1 through 8: a. Reduce Vin b. Reconfigure LED array to reduce Vdrop c. Reduce Iout by increasing Rext d. Use external resistors or parallel device’s configuration (see application note AND8156) 10. Calculate the junction temperaure using the thermal information on Page 7 and refer to Figure 5 to check the output current drop due to the calculated junction temperature. If desired, compensate it by adjusting the value of Rext. http://onsemi.com 4 Iout Iout Iout Iout NUD4001 TYPICAL APPLICATION CIRCUITS D1 1N4004 R1 2.7 W, 1/4 W 1 Q1 R3 2.7 W, 1/4 W 8 2 Q2 8 3 NUD4001 6 7 NUD4001 3 6 4 4 Vbat + 13.5 Vdc − 7 1 5 2 5 R4 32 W, 5.0 W R2 32 W, 5.0 W R3 6.7 W, 4.0 W LED1 Luxeon Emitter 550 mA 0 Figure 7. Stop light automotive circuit using the NUD4001 device to drive one high current LED (550 mA). D1 1N4004 R1 7.0 W, 1/4 W 1 2 Q1 R2 7.0 W, 1/4 W 8 7 1 Q2 8 3 NUD4001 6 7 3 NUD4001 6 4 4 5 2 5 Vbat + 13.5 Vdc − R3 27 W, 2.0 W LED1 Luxeon Emitter 220 mA 0 Figure 8. Dome light automotive circuit using the NUD4001 device to drive one LED (220 mA). http://onsemi.com 5 NUD4001 1 Rext1 2.0 W, 1/4 W Q1 8 2 7 3 NUD4001 6 4 Rext2 110 k, 1/4 W 5 LED1 LXHL−MW1D Vbat + 12 Vdc − LED2 LXHL−MW1D Q2 2N2222 LED3 LXHL−MW1D PWM 0 Figure 9. NUD4001 Device Configuration for PWM D1 MURA105T3 D2 MURA105T3 R2 2.0 W, 1/4 W 1 8 2 7 3 NUD4001 6 4 12 Vac from: 60 Hz Transformer or Electronic Transformer Q2 5 C1 220 mF LED1 Luxeon Emitter 350 mA LED2 Luxeon Emitter 350 mA D3 MURA105T3 D4 MURA105T3 LED3 Luxeon Emitter 350 mA 0 Figure 10. 12 Vac landscape lighting application circuit using the NUD4001 device to drive three 350 mA LEDs. http://onsemi.com 6 NUD4001 THERMAL INFORMATION NUD4001 Power Dissipation reduce the thermal resistance. Figure 11 shows how the thermal resistance changes for different copper areas. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad®. Using a board material such as Thermal Clad or an aluminum core board, the power dissipation can be even doubled using the same footprint. The power dissipation of the SO−8 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RqJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SO−8 package, PD can be calculated as follows: 180 160 T * TA PD + Jmax RqJA 140 qJA (°C/W) The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.13 W. 120 100 PD + 150°C * 25°C + 1.13 W 110°C 80 The 110°C/W for the SO−8 package assumes the use of a FR−4 copper board with an area of 2 square inches with 2 oz coverage to achieve a power dissipation of 1.13 W. There are other alternatives to achieving higher dissipation from the SOIC package. One of them is to increase the copper area to 60 0 1 2 3 4 5 6 7 8 9 10 BOARD AREA (in2) Figure 11. qJA versus Board Area 250 1S −36.9 sq. mm −0.057 in sq. 1S −75.8 sq. mm −0.117 in sq. 200 R(q) (C°/W) 1S −150.0 sq. mm −0.233 in sq. 150 1S −321.5 sq. mm −0.498 in sq. 1S −681.0 sq. mm −1.056 in sq. 100 1S −1255.0 sq. mm −1.945 in sq. 50 0 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 TIME (sec) Figure 12. Transient Thermal Response http://onsemi.com 7 10 100 1000 NUD4001 PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AF −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) M Y M 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8 _ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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