ONSEMI MURA110T3

MURA105T3, MURA110T3
Preferred Devices
Surface Mount
Ultrafast Power Rectifiers
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
•
•
•
•
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.66 Volts Max @ 1.0 A, TJ = 150°C)
Mechanical Characteristics:
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ULTRAFAST RECTIFIERS
1 AMPERE
50-100 VOLTS
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 5000 units per reel
Polarity: Polarity Band Indicates Cathode Lead
ESD Protection: Human Body Model > 4000 V (Class 3)
ESD Protection: Machine Model > 400 V (Class C)
Marking: U4A, U4B
MARKING
DIAGRAM
U4x
SMA
CASE 403D
PLASTIC
x = A (105T3)
B (110T3)
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA105T3
MURA110T3
VRRM
VRWM
VR
Average Rectified Forward Current
@ TL = 155°C
@ TL = 135°C
IF(AV)
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
50
A
TJ
- 65 to
+175
°C
Operating Junction Temperature Range
 Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 3
Value
Device
Package
Shipping
MURA105T3
SMA
5000/Tape & Reel
MURA110T3
SMA
5000/Tape & Reel
Unit
V
50
100
A
1.0
2.0
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MURA105T3/D
MURA105T3, MURA110T3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
Max
Unit
PsiJL
(Note 2)
RθJA
24
°C/W
216
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/µs)
trr
Volts
0.875
0.66
µA
2.0
50
30
ns
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR-4.
2. In compliance with JEDEC 51, these values (historically represented by RθJL) are now referenced as PsiJL.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
100
IR, REVERSE CURRENT (A)
1
TJ = 100°C
0.1
0.01
0.001
IF, INSTANTANEOUS FORWARD CURRENT (A)
TJ = 175°C
10
TJ = 25°C
TJ = 175°C
10
TJ = 100°C
1
TJ = 25°C
0.1
20
0
40
60
80
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
Figure 2. Maximum Reverse Current
100°C
TC = 175°C
25°C
1
0.1
0.01
0.4
40
VR, REVERSE VOLTAGE (VOLTS)
10
0.3
20
0
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IR, REVERSE CURRENT (A)
100
0.5
0.6
0.7
0.8
0.9
1
1.1
10
100°C
TC = 175°C
25°C
1
0.1
0.01
0.3
VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.4
0.5
0.6
0.7
0.8
0.9
1
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 4. Maximum Forward Voltage
Figure 3. Typical Forward Voltage
http://onsemi.com
2
1.1
MURA105T3, MURA110T3
60
50
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 48 pF
50
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
40
35
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
45
30
25
20
15
10
40
30
20
10
5
0
4
0
8
12
16
20
28
24
36
32
0
40
12
16
20
24
28
32
Figure 5. Typical Capacitance
Figure 6. Maximum Capacitance
IF, AVERAGE FORWARD CURRENT (A)
RJL = 24°C/W
TJ = 175°C
dc
3
2.5 SQUARE WAVE
2
1.5
1
0.5
0
100 110
8
VR, REVERSE VOLTAGE (VOLTS)
4
3.5
4
VR, REVERSE VOLTAGE (VOLTS)
120
130
140
150
160
170
RJA = 216°C/W
TJ = 175°C
dc
1
SQUARE
WAVE
0.5
0
0
180
20
40
60
100
120
140
160
Figure 8. Current Derating, Ambient
(FR-4 Board with Minimum Pad)
2.5
TJ = 175°C
2
dc
SQUARE WAVE
1.5
1
0.5
0
0.5
80
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating, Lead
0
36
1.5
TL, LEAD TEMPERATURE (°C)
PF, AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
0
1
1.5
2
2.5
3
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Power Dissipation
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3
3.5
40
MURA105T3, MURA110T3
PACKAGE DIMENSIONS
SMA
CASE 403D-02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS
403D−02.
S
A
D
DIM
A
B
C
D
H
J
K
S
B
POLARITY INDICATOR OPTIONAL
AS NEEDED
INCHES
MIN
MAX
0.160
0.180
0.090
0.115
0.075
0.095
0.050
0.064
0.002
0.006
0.006
0.016
0.030
0.060
0.190
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
2.29
2.92
1.91
2.41
1.27
1.63
0.05
0.15
0.15
0.41
0.76
1.52
4.83
5.59
C
K
J
H
0.157
4.0
0.0787
2.0
0.0787
2.0
inches
mm
SMA FOOTPRINT
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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PUBLICATION ORDERING INFORMATION
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4
MURA105T3/D