LX5560 InGaAs – E-Mode pHEMT Low Noise Amplifier ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LNA is implemented with bias circuit and input matching circuit on chip, resulting in simple external circuit. In addition, the on-chip bias circuit provides stable performance of gain, NF and current for voltage variation compared to a general resistor-network bias circuit. The LX5560 is available in a 12-pin 2mmx2mm micro-lead package(MLPQ12L). 0.5µm InGaAs E-mode pHEMT 4.9 - 6GHz Operation Single 3.3V Supply Gain ~ 12dB Noise Figure ~ 1.7dB Input IP3 ~ +6dBm Input P1dB ~ +2dBm On-Chip Bias Circuit On-Chip Input Match Simple Output Match 2x2mm² MLPQ 12 Pin Low Profile 0.5mm WWW . Microsemi .C OM The LX5560 is a low noise amplifier (LNA) for WLAN applications in the 4.9-6.0 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure(NF) of 1.7dB while maintaining input third order intercept point(IIP3) of up to +6dBm. APPLICATIONS BLOCK DIAGRAM Wireless LAN 802.11a WiMax Vdd Bias Circuit RF Input RF Output Input Match IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com PRODUCT HIGHLIGHT • 560 645 LX5560 PACKAGE ORDER INFO LL Plastic MLPQ 12 pin RoHS Compliant / Pb-free LX5560LL Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5560LL-TR) Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5560 ® TM InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET N/C 9 RF OUT 8 N/C VDD 11 12 GND 6 5 4 N/C 7 N/C N/C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 10 1 N/C 2 RF IN 3 N/C LL PACKAGE WWW . Microsemi .C OM DC Supply Voltage, RF Off............................................................................................4 V Drain Current ............................................................................................................ 40 mA Total Power Dissipation............................................................................................0.15 W RF Input Power..................................................................................................... +10 dBm Operation Ambient Temperature Range ..................................................... -40°C to +85°C Storage Temperature Range.........................................................................-65°C to 150°C Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ... 260°C (+0 -5) N/C PACKAGE PIN OUT N/C ABSOLUTE MAXIMUM RATINGS (Bottom View) RoHS / Pb-free NiPdAu Lead Finish FUNCTIONAL PIN DESCRIPTION Name Pin # Description RF IN 2 RF Input for the low noise amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor gate. RF OUT 8 RF Output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. VDD 12 GND Center Metal Supply Voltage. N/C 1,3,4,5,6,7, 9,10,11 The center metal base of the MLP package provides both DC and RF ground. Not Used. They may be treated either as open pins or connected to the ground. PACKAGE DATA Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5560 ® TM InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET Parameter Symbol Application Frequency Range Small-Signal Gain Noise Figure Input 3rd Order Intercept Point Input P1dB Input Return Loss Output Return Loss Supply Voltage Supply Current f S21 NF IIP3 IP1dB S11 S22 VDD IDD Test Conditions Min 4.9 Room Temperature Freq. 1 = 5.25 GHz, Freq. 2 = 5.27 GHz Freq. = 5.5 GHz LX5560 Typ 12 1.7 6 2 9 10 3.3 9.5 Max 6 2.1 Units GHz dB dB dBm dBm dB dB V mA WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Nominal test conditions: VDD = 3.3V, IDD = 9.5mA, TA = 25°C (Room Temperature) ELECTRICALS Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5560 InGaAs – E-Mode pHEMT Low Noise Amplifier ® TM P RODUCTION D ATA S HEET S11 S12 S21 GAIN OVER TEMP S22 3.0V 20 3.6V 15 10 14 -40°C 0 13 S21 (dB) S11, S12, S21, S22 (dB) 3.3V WWW . Microsemi .C OM S-PARAMETER -10 12 +25°C -20 11 -30 10 +85°C 9 -40 0 1 2 3 4 5 6 4.9 7 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) Frequency (GHz) Typical S-Parameter Data at Room Temperature (Vdd = 3.3V, Idd = 9.5mA at Room Temperature) NOISE FIGURE OVER TEMP 3.0V 3.3V CURRENT OVER TEMP 3.6V -40°C 2.5 +85°C 15 14 +85°C 13 2 12 +25°C Idd (mA) Noise Figure (dB) +25°C 1.5 -40°C 11 10 9 8 1 7 6 5 0.5 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 3 6 3.1 3.2 3.3 INPUT P1DB (+25°C) 3.0V 3.3V 3.4 3.5 3.6 Vdd (V) Frequency (GHz) INPUT IP3 (+25°C) 3.0V 3.6V 3.3V 3.6V 12 5 11 IIP3 (dBm) 10 3 2 9 8 CHARTS IP1dB (dBm) 4 7 6 5 1 4 0 3 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) Copyright © 2006 Rev. 1.0, 2006-12-20 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency (GHz) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5560 InGaAs – E-Mode pHEMT Low Noise Amplifier ® TM P RODUCTION D ATA S HEET POWER SWEEP @ 5.5GHz Idd 20 35 15 30 10 25 5 20 0 15 -5 10 -10 5 -15 Idd (mA) Pout (dBm), Gain (dB) Gain WWW . Microsemi .C OM Pout 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Pin (dBm) (Vdd=3.3V, Idq=9.5mA at Room Temperature) CHARTS Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5560 TM ® InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET APPLICATION SCHEMATIC WWW . Microsemi .C OM BOM LIST Reference Designator Part Description Case C1 Capacitor, 1 pF 0402 C2 Capacitor,1 µF 0603 C3 Capacitor,10 µF 0805 L1 Inductor, 1.5 nH (TOKO : LL1005-FH1N5S) 0402 R1 Resistor, 30 Ohm 0402 NOTES It is recommended to place C1 at ~30mil from MLP package outline. It is recommended to place L1 at ~30mil from MLP package outline. C2 and C3 are used for standalone evaluation board test only. They can be replaced with a 1nF(0402) in final applications. APPLICATIONS Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5560 InGaAs – E-Mode pHEMT Low Noise Amplifier ® TM P RODUCTION D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM LL 12-Pin MLPQ Plastic (2x2mm) D D2 E E2 L e b A A1 A3 Dim A A1 A3 b D D2 E E2 e L MILLIMETERS MIN MAX 0.40 0.50 0.00 0.05 0.15 REF 0.15 0.25 2.00 BSC 0.77 1.02 2.00 BSC 0.77 1.02 0.40 BSC 0.19 0.39 INCHES MIN MAX 0.016 0.020 0.000 0.002 0.006 REF 0.006 0.010 0.079 BSC 0.030 0.040 0.079 BSC 0.030 0.040 0.016 BSC 0.007 0.015 Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Recommended Land Pattern Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5560 TM ® InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reverses the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8