LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias. The LX5510B is available in a 16pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510B an ideal solution for mediumgain power amplifier requirements for IEEE 802.11b/g applications Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~70mA Power Gain ~19dB @ 2.45GHz and Pout = 19dBm Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) WWW . Microsemi .C OM The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single supply of 3.3 volts and a low quiescent current of 70mA the power gain is 19dB 2.4 – 2.5GHz. APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ Plastic MLPQ 16 pin LX5510B TA (°C) RoHS Compliant / Pb-free 0 to 70 LX5510BLQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510BLQ-TR) This device is classified as EDS Level 1 in accordance with MILSTD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be used when handling this device. Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT 13 15 16 * 1 11 2 10 3 4 9 8 7 6 N.C. RF IN RF IN N.C. 5 N.C. VB1 VB2 N.C. Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 14 12 LQ PACKAGE (Bottom View) THERMAL DATA LQ WWW . Microsemi .C OM VCC N.C. Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ......260°(+0, -5) VC2 RF OUT RF OUT N.C. VC1 N.C. DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-65°C to +150°C RoHS / Pb-free 100% Matte Tin Lead Finish Plastic MLPQ 16-Pin THERMAL RESISTANCE-JUNCTION TO CASE, θJC 10°C/W 50°C/W THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. VB2 Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as VREF) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as VC). RF OUT RF output for the power amplifier. Power supply for first stage amplifier. The VC1 feed line should be terminated with a 3.9pF bypass capacitor 50 mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as VC). VC2 Power supply for second stage amplifier. The VC2 feed line should be driven with a 8.2nH AC blocking inductor and 1µF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as VC). GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA VC1 LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Parameter ` SECTION HEADER Frequency Range Power Gain at POUT= 19dBm EVM at Pout = 19dBm Total Current @ POUT = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic nd 2 Side Lobe Total current Pout=23 dBm Ramp-On Time Symbol Test Conditions f GP Min tON 70°C except where LX5510B Typ Max 2.4 64QAM / 54Mbps OFDM IC_TOTAL ICQ IREF S21 ΔS21 ΔS21 S11 S22 S12 ≤ For ICQ = 70mA Over 100MHz 0°C to +70°C Pout = 19dBm Pout = 19dbm 23 dBm 11 Mbps CCK 11 Mbps CCK 10 ~ 90% 2.5 19 3.0 135 70 1.5 19 ±0.5 ±0.5 10 10 40 -55 -55 -50 190 100 Units GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc dBc mA ns WWW . Microsemi .C OM Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA otherwise noted and the following test conditions: VC = 3.3V, VREF = 2.88V, ICQ = 70mA, TA = 25°C Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. ELECTRICALS Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET EVM DATA WITH 54MB/S64QAM OFDM 50 m3 Frequency = 2.45GHz m3 = -19.87 m2 Frequency = 2.50GHz m2 = 18.93 8 140 6 130 5 120 4 110 3 100 -20 2 90 -30 1 80 EVM_PA /(%) dB(S(2,2)) dB(S(1,1)) 150 7 40 m1 30 20 10 m2 0 dB(S(2,1)) dB(S(1,2)) Current 3.3V EVM PA Only m3 -10 -40 70 0 -50 0 1 2 3 4 5 6 0 7 WWW . Microsemi .C OM 160 9 m1 Frequency = 2.40GHz m1 = 20.08 Current / (mA) S PARAMETER DATA 2 4 6 8 10 12 14 16 18 20 22 Output Power /(dBm) Frequency (GHz) VC = 3.3V, VREF = 2.88V, ICQ = 70mA VC = 3.3V, VREF = 2.88V, ICQ = 70mA ACP DATA WITH 54MB/S 64 QAM OFDM SPECTRUM WITH 23DBM 11MB/S CCK -45.0 ACP 30MHz ACP /(dBc) -47.5 -50.0 -52.5 -55.0 -57.5 -60.0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /(dBm) VC = 3.3V, VREF = 2.88V, ICQ = 70mA VC = 3.3V, VREF = 2.88V, ICQ = 70mA, IC = 190mA SUPPLY CURRENT WITH 11MB/S CCK 200 11 Mbps CCK Current 3V3 150 CHARTS Current /(mA) 175 125 100 75 50 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /(dBm) VC = 3.3V, VREF = 2.88V, ICQ = 70MA Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET EVALUATION BOARD WWW . Microsemi .C OM Recommended BOM Value 2.7pF (0402) 2.4pF (0402) 3.9pF (0402) 1µF (0603) L1,L2 8.2nH(0402) R1 350 Ω (0402) R2 200 Ω (0402) R3 100 Ω (0402) TL1 30/22 mil (L/W) TL2 100/10 mil (L/W) TL3 60/10 mil (L/W) Substrate 10 mil GETEK Location C1 C2 C3 C4,C5 L1 C3 C4 C1 RF Input C5 GND VC εr =3.9, tan δ = 0.01 50Ω Microstrip width: 22 mil L2 C2 R1 | R2 R3 RF Output EVALUATION VREF Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET LQ WWW . Microsemi .C OM PACKAGE DIMENSIONS 16-Pin MLPQ 3x3 D b E2 L D2 E or e K A A1 or Pin 1 Indicator A3 Or Dim A A1 A3 b D E e D2 E2 K L L1 MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 0.15 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 0.006 Note: 1. D E2 b L 2. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container. D2 E L1 e A1 A K MECHANICALS Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5510B ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET WWW . Microsemi .C OM TAPE AND REEL Tape And Reel Specification Ø 1.50mm 4.00mm Top View 1.75mm 3.30mm 5.5 ± 0.05mm 12.00 ± 0.3mm 3.30mm 8.00mm Ø 1.50mm Part Orientation 1.10mm Side View 0.30mm 2.2mm Ø 13mm +1.5 -0.2 10.6mm Ø 330mm ±0.5 Ø 97mm ±1.0 MECHANICALS 13mm +1.5 Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5510B TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2004 Rev. 1.0d, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8