LX5501A InGAP HBT Gain Block ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Advanced InGaP HBT DC to 6 GHz Operation Single Supply Low Idle Current (10 - 35 mA) Small Signal Gain ~ 11 dB at 6 GHz P1dB ~ 11 dBm at 6 GHz SOT-23 Package Designed as an easily cascadable 50ohm internally matched gain block, the LX5501A can be used for IF and RF amplification in wireless / wired voice and data communication products as well as in broadband test equipment operating up to 6 GHz. The amplifier is available in a plastic 5-lead SOT-23 package. WWW . Microsemi .C OM This general-purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com PA driver for WLAN and Cordless Phones. VCO buffer. Low Current, High Gain Cascaded Amplifiers. PRODUCT HIGHLIGHT C4 • • • C3 L1 Fully characterized for 5v operation (with external bias resistor). Input and output matched to 50 ohms for ease of cascading. Cascaded gain blocks can be individually biased for the lowest supply current. VCC Rext C2 C1 3 1 IN OUT LX5501A 5 4 2 LX5501A PACKAGE ORDER INFO TA(°C) -40 to +85°C SE Plastic SOT-23 5 pin RoHS Compliant / Pb-free Transition DC: 0503 LX5501ASE Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5501ASE-TR) Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5501A InGAP HBT Gain Block ® TM P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT GND 1 GND 2 RF Input 3 5 RF Output / VCC 4 GND SE PACKAGE Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. (Top View) RoHS / Pb-free 100% Matte Tin Lead Finish WWW . Microsemi .C OM DC Supply Voltage ............................................................................................6V Collector Current ........................................................................................100mA RF Input Power........................................................................................... 10dBm Operating Temperature Range ...........................................................-40 to +85°C Storage Temperature Range...........................................................-65°C to 150°C Peak Package Solder Reflow Temp. (40 second max. exposure) ... 260°C (+0, -5) FUNCTIONAL PIN DESCRIPTION Pin No. Description 1 Ground 2 Ground 3 RF Input 4 Ground 5 RF Output/VCC Supply RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min LX5501A Typ Max Units ` Supply Voltage (with appropriate external resistor) Quiescent Current (No RF input) VCC Icq 3.5 10 6 40 V mA ELECTRICAL CHARACTERISTICS Conditions: +25°C, 5V supply voltage. Parameter ` Symbol Test Conditions Min LX5501A Typ Max Units GENERAL SPECIFICATIONS (FIG 1. TEST CIRCUIT) Copyright © 2004 Rev. 1.1, 2005-07-14 S21 P1dB S11 S22 S12 Frequency = 5.8 GHz Frequency = 5.8 GHz Frequency = 2.4-6 GHz Frequency = 2.4-6 GHz Frequency = 2.4-6 GHz Frequency = 5.8 GHz, Pout = 10 dBm Icq Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 11.4 11.5 -10 -10 -20 -30 30 dB dBm dB dB dB dBC mA Page 2 ELECTRICALS Small Signal Gain P1dB Compression Input Return Loss Output Return Loss Isolation Harmonics Quiescent Current LX5501A InGAP HBT Gain Block ® TM P RODUCTION D ATA S HEET FIGURE 1: TEST CIRCUIT FOR 1 TO 6 GHZ WWW . Microsemi .C OM C4 C3 L1 VCC Rext C2 C1 3 1 IN OUT LX5501A 5 4 2 Copyright © 2004 Rev. 1.1, 2005-07-14 Value 10pF 10pf 0.1uF 3.3nH 50 ohms Comment DC block (0402) RF decoupling (0402) LF decoupling (0402) RF choke (0402) Bias setting resistor (0402) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 APPLICATION Component C1,C2 C3 C4 L1 REXT Page 3 LX5501A InGAP HBT Gain Block ® TM P RODUCTION D ATA S HEET APPLICATION NOTE The gain block is self-biased by the voltage that is present on pin 5 (VBIAS). Chart 1 shows the quiescent current vs. bias voltage characteristic. Chart 2 shows device characteristics when operated with a 5v supply and with different values of external resistor. Using Chart 2 it is possible to trade-off Gain and P1dB compression point for supply current. R EXT (V1)=R EXT (5V)• (V1-VBIAS ) (5-VBIAS ) Where VBIAS is the Pin 5 bias voltage obtained from Chart 1and V1 is the desired supply voltage. 70 14 35 60 12 30 10 25 8 20 50 40 30 20 Icq 10 6 3.2 3.3 3.4 3.5 3.6 3.7 3.8 Ic 4 10 P 1dB 2 0 3.1 15 Gain 5 0 3.9 0 25 Pin 5 Bias Voltage - Volts Ic, Supply Current - mA TYPCAL P1DB, GAIN AND IC VS. REXT @ 25°C Gain, P1dB - dB/dBm Icq, Quiescent Current - mA TYPCAL QUIESCENT CURRENT VS. PIN 5 BIAS VOLTAGE @ 25°C WWW . Microsemi .C OM Supply voltages other than 5v may be accommodated by adjusting the value of the external resistor to produce the same quiescent current as the 5v case. To calculate the resistor required for a different supply voltage use the following formula: DESIGN CONSIDERATIONS 75 125 175 Rext - ohm s Frequency = 5.8GHz, VCC = 5V TYPCAL S-PARAMETRS @ 25°C TYPCAL 2.4 GHZ CHARACTERISTICS @ 25°C 0 16 S22 -15 S12 -20 8 6 4 -25 2 0 -30 2 3 4 Frequency - GHz 5 Pout, Gain - dBm/dB S11 10 S11, S12, S22 - dB -10 15 35 dBm 10 30 5 25 20 0 P 1dB P o ut Gain Ic -5 15 10 5 -10 6 0 -25 -20 -15 -10 -5 0 5 Pin - dBm VCC = 5V, REXT = 50Ω Copyright © 2004 Rev. 1.1, 2005-07-14 40 P1dB = 12.0 VCC = 5V, REXT = 50Ω Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 APPLICATIONS S21 - dB 45 -5 14 12 50 20 S21 Ic, Supply Current - mA 18 LX5501A InGAP HBT Gain Block ® TM P RODUCTION D ATA S HEET TYPCAL 5.8 GHZ CHARACTERISTICS @ 25°C 45 45 40 40 35 5 30 0 25 20 -5 15 P1dB Pout Gain Ic -10 10 Supply Current - mA 10 50 Ic, Supply Current - mA Pout, Gain - dBm/dB P1dB = 11.5 dBm 35 30 25 20 15 -40 deg C +25 deg C +85 deg C 10 5 0 5 -15 -20 -15 -10 -5 -20 -15 -10 -5 0 0 5 10 15 Pin - dBm 0 -25 WWW . Microsemi .C OM 15 TYPICAL SUPPLY CURRENT VARIATION OVER –40 TO +85°C AMBIENT 5 Frequency = 5.8GHz, VCC = 5V. REXT = 50Ω Pin - dBm VCC = 5V, REXT = 50Ω TYPCAL GAIN VARIATION OVER –40 TO +85°C AMBIENT TYPCAL P1DB VARIATION OVER –40 TO +85°C AMBIENT 14 12 12 10 P1dB - dBm Gain - dB 10 8 6 4 -40 deg C 2 8 6 4 2 +25 deg C P 1dB +85 deg C 0 0 -20 -15 -10 -5 0 5 10 15 -50 0 50 100 Am bient Tem perature - deg C Pin - dBm Frequency = 5.8GHz, VCC = 5V, REXT = 50Ω Frequency = 5.8GHz, VCC = 5V, REXT = 50Ω CHARTS Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5501A InGAP HBT Gain Block ® TM P RODUCTION D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM SE 5 Pin Plastic SOT-23 D G H E A1 A C B F J I Dim A A1 B C D E F G H I J K MILLIMETERS MIN MAX 0.90 1.30 0.90 1.45 0.25 0.50 0.09 0.20 2.80 3.10 1.50 1.75 0.95 BSC 1.90 BSC 2.60 3.00 0.35 0.55 0.00 0.15 10° MAX INCHES MIN MAX 0.035 0.051 0.035 0.057 0.010 0.020 0.004 0.008 0.110 0.122 0.059 0.069 0.038 BSC 0.075 BSC 0.102 0.118 0.014 0.022 0.000 0.006 10° MAX K Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5501A TM InGAP HBT Gain Block ® P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7