MICROSEMI LX5512B

LX5512B
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3%, and consumes 140mA total DC
current.
The LX5512B is available in a 16pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of LX5512B meets the requirements of
high-gain power amplifiers for IEEE
802.11b/g applications.
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ƒ
ƒ
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ƒ
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current ICQ
~65mA
Power Gain ~ 32 dB at
2.45GHz & Pout=19dBm
Total Current ~140mA for
Pout=19dBm at 2.45 GHz
OFDM
EVM ~3 % for 64QAM/ 54Mbps
& Pout=19dBm
Small Footprint: 3x3mm2
Low Profile: 0.9mm
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The LX5512B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range.
The PA is implemented as a threestage
monolithic
microwave
integrated circuit (MMIC) with active
bias and input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). It operates at a single
low voltage supply of 3.3V with 32
dB power gain between 2.4-2.5GHz,
at a low quiescent current of 65mA.
APPLICATIONS
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ƒ IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
LX5512BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5512BLQTR)
This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)
testing. Appropriate ESD procedures should be observed when handling this device.
LX5512B
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5512B
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
N/C
VC1
14
15
16
12
1
N/C
RF OUT
11
2
N/C
10
e3
8
7
6
5
VCC
THERMAL DATA
4
VB12
9
VB3
DET
REF
RF OUT
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
LQ
13
VC3
RF IN
N/C
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DC Supply Voltage, RF off......................................................................................................7V
Collector Current..............................................................................................................500mA
Total Power Dissipation ......................................................................................................... 2W
RF Input Power .................................................................................................................. 5dBm
o
Operation Ambient Temperature ............................................................................ -40 to +85 C
o
Storage Temperature............................................................................................ -60 to +150 C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255°C(+5, -0)
VC2
PACKAGE PIN OUT
N/C
ABSOLUTE MAXIMUM RATINGS
LQ PACKAGE
(Bottom View)
Plastic MLPQ 16-Pin
Pb-free 100% Matte Tin Lead Finish
THERMAL RESISTANCE-JUNCTION TO CASE, θJC
10°C/W
50°C/W
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA
Junction Temperature Calculation: TJ = TA + (PD x θJA).
The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the
above assume no ambient airflow.
FUNCTIONAL PIN DESCRIPTION
Name
Description
RF IN
RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be
needed.
VB12
Bias current control voltage for the first and second stage.
VB3
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB12) into a single reference voltage (referred to as VREF) through an external resistor bridge.
VCC
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF
bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a
single supply voltage (referred to as VC).
RF OUT
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.
Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor,
followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single
supply voltage (referred to as VC).
VC2
Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor.
This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as VC).
VC3
Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass
capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as VC).
REF
Power detector reference output pin should be terminated with a 100KΩ loading resistor
DET
Power detector output pin should be terminated with a 100KΩ loading resistor
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
PACKAGE DATA
VC1
LX5512B
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
Parameter
Symbol
Frequency Range
Power Gain @ POUT = 19dBm
EVM @ POUT = 19dBm
Total Current @ POUT = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current @ POUT = 23dBm
nd
2 Side Lobe @ 23dBm
Ramp-On Time
Differential Detector Response
f
Gp
Test Conditions
Min
2.4
64QAM / 54Mbps
IC_TOTAL
ICQ
IREF
S21
∆S21
∆S21
S11
S22
S12
tON
LX5512B
Typ
Max
For ICQ = 65mA
Over 100MHz
0 to +85°C
POUT = 19dBm
POUT = 19dBm
11Mbps CCK
11Mbps CCK
10 ~ 90%
19dBm OFDM
2.5
32
3.0
140
65
1.8
32
±0.25
±0.25
10
10
45
-40
-40
215
-55
100
1.4
Units
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
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ELECTRICAL CHARACTERISTICS
Test conditions: VC = 3.3V, VREF = 2.95V, ICQ = 65mA, TA = 25°C
Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.
ELECTRICALS
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5512B
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
S-PARAMETER DATA
7
6
m1
40
125
4
100
3
75
2
50
-30
1
25
-40
0
m2
20
10
m3
0
-10
-20
-50
0
1
2
3
4
5
6
0
0
7
2
4
VC = 3.3V, VREF = 2.95V, ICQ = 65mA
ACP & DIFF DETECTOR VOLTAGE
ACP 30MHz
2.0
-50
1.5
-52
1.0
-54
0.5
-56
0
6
8
10
12
14
16
18
20
Current 3.3V
225
200
Current /[mA]
Diff DET Voltage
4
250
2.5
-48
2
10 12 14 16 18 20 22
CURRENT @ 11MBPS CCK
3.0
0
8
EVM and Supply Current with 54Mbps 64QAM
VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz
-44
-46
6
Output Power /[dBm]
Frequency (GHz)
ACP /[dB]
150
5
30
dB(S(1,1))
dB(S(1,2))
175
Current 3.3V
EVM PA ONLY
Current /[mA]
m3
Freq = 2.45GHz
m3 = -9.31
EVM PA /[%]
dB(S(2,2))
dB(S(2,1))
50
EVM & SUPPLY CURRENT
m2
Freq = 2.50GHz
m2 = 31.46
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m1
Freq = 2.40GHz
m1 = 32.02
175
150
125
100
75
50
25
22
Output Power /[dBm]
ACP (30MHz) & Differential Detector Voltage with 54Mbps 64QAM
VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power /[dBm]
VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz
23DBM OUTPUT @ 11MBPS CCK
CHARTS
VC = 3.3V, VREF = 2.95V, ICQ = 65mA, Frequency = 2.45GHz
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5512B
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
PACKAGE DIMENSIONS
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LQ
16-Pin MLPQ 3x3 (67x67 mil DAP)
D
b
D2
E
E2
e
K
L
A
A1
A3
Copyright © 2004
Rev. 1.0, 2004-06-23
MILLIMETERS
MIN
MAX
0.80
1.00
0
0.05
0.20 REF
0.18
0.30
3.00 BSC
3.00 BSC
0.50 BSC
1.30
1.55
1.30
1.55
0.2
0.35
0.50
INCHES
MIN
MAX
0.031
0.039
0
0.002
0.008 REF
0.007
0.012
0.118 BSC
0.118 BSC
0.020 BSC
0.051
0.061
0.051
0.061
0.008
0.012
0.020
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
MECHANICALS
Dim
A
A1
A3
b
D
E
e
D2
E2
K
L
Page 6
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
NOTES
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NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7