2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N6660 and 2N6661 are enhancementmode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices Applications ► ► ► ► ► ► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device Package BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (A) 2N6660 TO-39 60 3.0 1.5 2N6661 TO-39 90 4.0 1.5 Absolute Maximum Ratings Pin Configuration Parameter Value Drain to source voltage BVDSS Drain to gate voltage BVDGS Gate to source voltage ±20V Operating and storage temperature Soldering temperature1 -55°C to +150°C +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note 1. Distance of 1.6mm from case for 10 seconds. DGS TO-39 Case: DRAIN 2N6660/2N6661 Electrical Characteristics (T C Symbol = 25°C unless otherwise specified) Parameter BVDSS Drain-to-source breakdown voltage VGS(th) Gate threshold voltage ΔVGS(th) IGSS Min Typ Max 2N6660 60 - - 2N6661 90 - - 0.8 - 2.0 Conditions V VGS = 0V, ID = 10µA V VGS = VDS, ID = 1.0mA O VGS(th) change with temperature - -3.8 -5.5 mV/ C VGS = VDS, ID = 1.0mA Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V - - 10 - - 500 1.5 - - All - - 5.0 2N6660 - - 3.0 2N6661 - - 4.0 170 - - IDSS Zero gate voltage drain current ID(ON) ON-state drain current RDS(ON) Static drain-to-source ON-state resistance GFS Forward transconductance CISS Input capacitance - - 50 COSS Common source output capacitance - - 40 CRSS Reverse transfer capacitance - - 10 t(ON) Turn-ON time - - 10 t(OFF) Turn-OFF time - - 10 VSD Diode forward voltage drop - 1.2 Reverse recovery time - 350 trr Units VGS = 0V, VDS = Max rating µA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC A VGS = 10V, VDS = 10V VGS = 5.0V, ID = 0.3A Ω VGS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A mmho VDS = 25V, ID = 0.5A pF VGS = 0V, VDS = 24V, f = 1.0MHz ns VDD = 25V, ID = 1.0A, RGEN = 25Ω - V VGS = 0V, ISD = 1.0A - ns VGS = 0V, ISD = 1.0A Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Thermal Characteristics Device Package ID (continuous)* (mA) ID (pulsed) (A) Power Dissipation @TC = 25OC (W) θjc ( C/W) θja ( C/W) IDR* (mA) IDRM (A) 2N6660 TO-39 410 3.0 6.25 20 125 410 3.0 2N6661 TO-39 350 3.0 6.25 20 125 350 3.0 O O Notes: * ID (continuous) is limited by max rated TJ. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RGEN D.U.T. 10% OUTPUT 90% OUTPUT tF INPUT 0V RL 90% 2 2N6660/2N6661 TO-39 Package Outline 0.360 ± 0.010 DIA (9.144 ± 0.254) 0.325 ± 0.010 DIA (8.255 ± 0.254) 0.050 MAX (1.270) 0.250 ± 0.010 (6.350 ± 0.254) 0.018 ± 0.002 (0.4572 ± 0.0508) 0.500 MIN (12.700) 0.200 TYP (5.080) 90° NOM 0.035 ± 0.005 (0.889 ± 0.127) 0.100 (2.540) 2 3 1 0.033 ± 0.005 (0.8382 ± 0.127) 1-Source 2-Gate 3-Drain 45° NOM Measurement Legend = 0.100 (2.540) Dimensions in Inches (Dimensions in Millimeters) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-2N6660_2N6661 A042507 3