TOSHIBA TLP2631_07

TLP2631
TOSHIBA photocoupler
GaAℓAs IRed & Photo IC
TLP2631
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer-Peripheral Interface
Microprocessor System Iinterface
Digital Isolation For A / D, D / A Conversion
Unit in mm
The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAℓAs
light emitting diode and integrated high gain, high speed photodetector.
This unit is 8-lead DIP.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V / μs.
•
Input current threshold: IF = 5mA(max.)
•
Switching speed: 10MBd(typ.)
•
Common mode transient immunity: ±1000V / μs(min.)
•
Guaranteed performance over temperature: 0~70°C
•
Isolation voltage: 2500Vrms(min.)
•
UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.54g
Truth Table (positive logic)
Input
Output
H
L
L
H
11−10C4
Pin Configuration (top view)
VCC
1
8
2
7
A 0.01 to 0.1μF bypass capacitor must
3
6
connected between pins 8 and 5(see Note 1).
4
GND
Shield
5
1 : Anode 1
2 : Cathode 1
3 : Cathode 2
4 : Anode 2
5 : GND
6 : VO2 (Output 2)
7 : VO1 (Output 1)
8 : VCC
Schematic
+
VF1
−
+
VF2
−
1
I
1 F1
Shield
ICC
8
IO1
7
2
4
IF2
IO2
6
VCC
VO1
VO2
3
5
GND
2007-10-01
TLP2631
Absolute Maximum Ratings (no derating required up to 70°C)
Characteristic
Symbol
Rating
Unit
IF
20
mA
IFP
30
mA
Reverse voltage (each channel)
VR
5
V
Output current (each channel)
IO
16
mA
Output voltage (each channel)
VO
−0.5~7
V
VCC
7
V
PO
40
mW
Operating temperature range
Tstg
−55~125
°C
Storage temperature range
Topr
−40~85
°C
Tsol
260
°C
BVS
2500
Vrms
Detector
LED
Forward current (each channel)
Pulse forward current
(each channel)*
Supply voltage
(1 minute maximum)
Output collector power
dissipation (each channel)
Lead soldering temperature
(10s)**
Isolation voltage
(AC, 1 min., R.H.≤ 60%, Note 3)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* t ≤ 1 msec duration.
** 2mm below seating plane.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, low level, each channel
IFL
0
―
250
μA
Input current, high level, each channel
IFH
6.3*
―
20
mA
Supply voltage**, output
VCC
4.5
5
5.5
V
N
―
―
8
Topr
0
―
70
Fan out (TTL load, each channel)
Operating temperature
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
2
2007-10-01
TLP2631
Electrical Characteristics (Ta = 0~70°C unless otherwise noted)
Characteristic
Input forward voltage
(each channel)
Symbol
VF
Input diode temperature
coefficient (each channel)
ΔVF / ΔTa
Input reverse breakdown
voltage (each channel)
BVR
Test Condition
Min.
Typ. *
Max.
Unit
IF = 10mA, Ta = 25°C
―
1.65
1.75
V
IF = 10mA
―
−2.0
―
mV / °C
IR = 10μA, Ta = 25°C
5
―
―
V
Input capacitance
(each channel)
CT
VF = 0, f = 1MHz
―
45
―
pF
High level output current
(each channel)
IOH
VCC = 5.5V, VO = 5.5V
IF = 250μA
―
1
250
μA
Low level output voltage
(each channel)
VOL
VCC = 5.5V, IF = 5mA
IOL(sinking) = 13mA
―
0.4
0.6
V
High level supply current
(both channels)
ICCH
VCC = 5.5V, IF = 0
―
14
30
mA
Low level supply current
(both channels)
ICCL
VCC = 5.5V, IF = 10mA
―
24
38
mA
Isolation voltage
RS
VS = 500V, R.H. ≤ 60%
(Note 3)
5×10
10
―
Ω
Capacitance (input−output)
CS
f = 1MHz
(Note 3)
―
0.6
―
pF
Input−input leakage
current
II−I
R.H. ≤ 60%, t = 5s
VI−I = 500V
(Note 6)
―
0.005
―
μA
Resistance (input−input)
RI−I
VI−I = 500V
(Note 6)
―
10
11
―
Ω
Capacitance (input−input)
CI−I
f = 1MHZ
(Note 6)
―
0.25
―
pF
10
14
* All typical values are at VCC = 5V, Ta = 25°C.
3
2007-10-01
TLP2631
Switching Characteristics (Ta = 25°C, VCC = 5V)
Symbol
Test
Circuit
Propagation delay time to
low output level
tpHL
1
Propagation delay time to
high output level
tpLH
Output rise time, output
fall time (10~90%)
tr, tf
Characteristic
Test Condition
Min.
Typ.
Max.
Unit
IF = 0→7.5mA, RL = 350Ω
CL = 15pF (each channel)
―
60
75
ns
1
IF = 7.5mA→0, RL = 350Ω
CL = 15pF (each channel)
―
60
75
ns
1
IF = 0 7.5mA, RL = 350Ω
CL = 15pF (each channel)
―
30
―
ns
1000
10000
―
V / μs
−1000
−10000
―
V / μs
Common mode transient
immunity at high output
level
CMH
2
IF = 0, RL = 350Ω
VCM = 400V,
VO(min.) = 2V
(each channel, Note 4)
Common mode transient
immunity at low output
level
CML
2
IF = 7.5mA, RL = 350Ω
VCM = 400V
VO(max.) = 0.8V
(each channel, Note 5)
(Note 1) 2mm below seating plane
(Note 2) The VCC supply voltage to each TLP2631 isolator must be bypassed by a 0.01μF capacitor or larger. This
can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should
be connected as close as possible to the package VCC and GND pins each device.
(Note 3) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8
shorted together.
(Note 4) CMH・the maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in
the high state (i.e., VOUT > 2.0V).
Measured in volts per microsecond (V / μs).
Volts/ microsecond can be translated to sinusoidial voltages:
V / μs =
(dVCM)
Max. = fCM VCM (p.p.)
dt
Example:
VCM = 319Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified minimum.
(Note 5) CML・the maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in
the low output state (i.e., VOUT > 0.8V).
Measured in volts per microsecond (V / μs).
(Note 6) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
4
2007-10-01
TLP2631
Test Circuit 1. tpHL and tpLH
5V
100Ω
IF Monitor
VCC
1
2
7
3
6
4
GND 5
7.5mA
3.75mA
0mA
IF
8
0.1μF
Pulse input
PW = 10μs
Duty cycle = 1/10
RL
350Ω
tr
tf
5V
VO Monitor
CL
VO
tpHL
* CL is approximately 15pF which includes probe and stray
wiring capacitance.
4.5V
1.5V
0.5V
VOL
tpLH
Test Circuit 2. Transient Immunity And Typical Waveforms.
VCC
1
2
B
A
VFF
7
3
6
4
GND 5
+
VCM
5V
8
0.1μF
IF
CL
10%
tr
VO Monitor
VO
(IF = 0mA)
−
0V
tf
5V
2V
0.8V
VO
Pulse generator
VOL
(IF = 7.5mA)
ZO = 50Ω
CMH =
VCM
RL
350Ω
400V
90%
320(V)
320(V)
, CML =
t r (μs )
t r (μs )
* CL is approximately 15pF which includes probe and stray
wiring capacitance.
5
2007-10-01
TLP2631
IF – VF
Ta = 25 °C
10
1
0.1
0.01
1.0
1.2
1.4
IOH (μA)
6
High level output current
(V)
−1.6
1
0.3
3
10
30
50
(mA)
IOH – Ta
Ta = 25 °C
Output voltage VO
−1.8
100
VCC = 5 V
RL = 350Ω
1kΩ
4kΩ
2
2
−2.0
Forward current IF
VO – IF
1
−2.2
(V)
8
0
0
−2.4
−1.4
0.1
2.0
1.8
1.6
Forward voltage VF
4
ΔVF / ΔTa – IF
−2.6
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
Forward current IF (mA)
100
3
4
Forward current IF
5
IF = 250 μA
VCC = 5.5 V
50
VO = 5.5 V
30
10
5
3
6
1
(mA)
10
0
20
30
40
50
60
70
Ambient temperature Ta (°C)
VOL – Ta
VO – IF
10
IF = 5 mA
VOL (V)
VCC = 5 V
RL = 350Ω
8
Low level output voltage
Output voltage VO
(V)
RL = 4kΩ
6
Ta = 70°C
4
0°C
2
VCC = 5.5 V
0.5
VE = 2 V
IOL=16mA
0.4
12.8mA
9.6mA
6.4mA
0.3
0.2
0
0
0
1
2
3
Forward current IF
4
5
20
40
60
80
Ambient temperature Ta (°C)
6
(mA)
6
2007-10-01
TLP2631
tpHL, tpLH – IF
tpHL, tpLH – Ta
120
120
RL = 4kΩ
RL = 4kΩ
tpLH
tpLH
100
tpLH
1kΩ
tpHL
350Ω
350Ω
80
60
1kΩ
4kΩ
40
350kΩ
1kΩ
tpLH
80
350Ω
60
1kΩ
4kΩ
tpHL
40
Ta = 25 °C
20
0
5
Propagation delay time
tpHL, tpLH (ns)
Propagation delay time
tpHL, tpLH (ns)
100
VCC = 5 V
7
9
11
13
Forward current IF
15
VCC = 5 V
20
19
17
IF = 7.5 mA
0
0
(mA)
10
20
30
40
50
60
70
Ambient temperature Ta (°C)
tr, tf – Ta
320
VCC = 5 V
IF = 7.5 mA
Rise, fall time tr, tf
(ns)
300
RL = 4kΩ
tf
280
80
tf
1kΩ
tf
350Ω
tr
350Ω
60
40
20
0
0
1kΩ
4kΩ
10
20
30
40
50
60
70
Ambient temperature Ta (°C)
7
2007-10-01
TLP2631
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01