TLP719 TOSHIBA PHOTOCOUPLER GaAℓAs IRED + PHOTO−IC TLP719 Unit in mm Digital logic ground isolation Line receivers Microprocessor system interfaces Switching power supply feedback control Transistor invertors 4.58±0.25 Open collector • Package type : SDIP6 • Isolation voltage : 5000 Vrms (min) • • Common mode transient immunity Switching speed : ±10 kV/us(min) @VCM = 400 V : tpHL/ tpLH = 0.8 μs (max) @ IF = 16 mA , VCC = 5 V, RL = 1.9 kΩ , Ta = 25 °C • TTL compatible • Construction mechanical rating • • UL recognized Option (D4) TÜV approved +0.25 4.0 −0.20 7.62±0.25 −0.05 1.27±0.2 1.25±0.25 0.4±0.1 9.7±0.3 11-5J1 • Creepage Distance Clearance Insulation Thickness 1 2 3 0.25± +0.10 The TOSHIBA TLP719 consists of a GaAℓAs high-output light-emitting diode and a high-speed detector. This unit is a 6-lead SDIP. The TLP719 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP719 has a Faraday shield integrated on the photodetector chip to provide an effective common mode noise transient immunity. Therefore this product is suitable for application in noisy environmental conditions. 3.65 +0.15 −0.25 6.8±0.25 6 5 4 TOSHIBA 11-5J1 Weight:0.26 g (t yp .) PIN CONFIGURATION (Top View) 7.62-mm pitch standard type 10.16-mm pitch TLPXXXF type 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 1 6 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 2 5 : UL1577, File No. E67349 3 SHIELD 1 : ANODE 2 : N.C. 3 : CATHODE 4 : EMITTER (GND) 5 : COLLECTOR (OUTPUT) 4 6 : VCC : EN60747-5-2 Certificate No. R50033433 Maximum operating insulation voltage : 890 Vpk Highest permissible over voltage : 8000 Vpk ( Note ) When a EN60747-5-2 approved type is needed, please designate the “Option(D4)” SCHEMATIC IF 1 ICC IO VF 3 6 5 SHIELD 4 VCC VO GND A 0.1-μF bypass capacitor must be connected between pins 4 and 6. (See Note 7.) 1 2007-10-01 TLP719 Absolute Maximum Ratings (Ta = 25 °C) Characteristic Symbol Rating Unit (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A VR 5 V (Note 4) PD 45 mW Junction temperature Tj 125 °C Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO −0.5~20 V Supply voltage VCC −0.5~30 V PO 100 mW Tj 125 °C Operating temperature range Topr −55~100 °C Storage temperature range Tstg −55~125 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 5000 Vrms LED Forward current Reverse voltage Detector Diode power dissipation Output power dissipation (Note 5) Junction Temperature Isolation voltage (AC, 1 minute, R.H.≤ 60 %) (Note 6) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Derate 0.45 mA / °C above 70 °C. Note 2: 50% duty cycle, 1 ms pulse width. Derate 0.9 mA / °C above 70 °C. Note 3: Pulse width ≤ 1 μs, 300 pps. Note 4: Derate 0.8 mW / °C above 70 °C. Note 5: Derate 1.8 mW / °C above 70 °C. Note 6: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. Note 7: A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high-gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. 2 2007-10-01 TLP719 Electrical Characteristics (Ta = 25 °C) Characteristic LED Forward voltage Forward voltage Temperature coefficient Symbol Min. Typ. Max. Unit 1.65 1.85 V VF IF = 16 mA ΔVF / ΔTa IF = 16 mA ― −2 ― mV / °C Reverse current IR VR = 5 V ― ― 10 μA Capacitance between terminals CT VF = 0 V , f = 1 MHz ― 45 ― pF IF = 0 mA ,VCC = VO = 5.5 V ― 3 500 nA IF = 0 mA ,VCC = 30 V ― ― 5 ― ― 50 IOH (1) HIGH-level output current Detector Test Condition IOH (2) IOH VO = 20 V μA IF = 0 mA ,VCC = 30 V VO = 20 V,Ta = 70 °C HIGH-level supply current ICCH IF = 0 mA ,VCC = 30 V ― 0.01 1 μA Supply voltage VCC ICC = 0.01 mA 30 ― ― V Output voltage VO IO = 0.5 mA 20 ― ― V Min. Typ. Max. Unit 20 ― ― % ― ― 0.4 V Min. Typ. Max. Unit ― 0.8 ― pF ― Ω Coupled Electrical Characteristics (Ta = 25 °C) Characteristic Current transfer ratio LOW-level output voltage Symbol IO / IF VOL Test Condition IF = 16 mA ,VCC = 4.5 V VO = 0.4 V IF = 16 mA, VCC = 4.5 V IO = 2.4 mA Isolation Characteristics (Ta = 25 °C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition V = 0 V , f = 1 MHz R.H. ≤ 60% ,VS = 500 V AC, 1 minute Isolation voltage BVS (Note 6) (Note 6) 1×10 12 10 14 5000 ― ― AC, 1 second , in oil ― 10000 ― DC, 1 minute , in oil ― 10000 ― 3 Vrms Vdc 2007-10-01 TLP719 Switching Characteristics (Ta = 25 °C, VCC = 5 V) Characteristic Test Circuit Symbol Propagation delay time (H→ L) Test Condition tpHL Fig1 Min. Typ. Max. Unit IF = 0→ 16 mA RL = 1.9kΩ ― ― 0.8 μs ― ― 0.8 μs (L→ H) tpLH IF = 16→ 0 mA RL = 1.9kΩ Common mode transient immunity at logic HIGH output (Note 8) CMH IF = 0 mA VCM = 400 Vp−p RL = 1.9kΩ 10000 ― ― V / μs IF = 16 mA VCM = 400 Vp−p RL = 1.9 kΩ −10000 ― ― V / μs Propagation delay time Common mode transient immunity at logic LOW output (Note 8) Fig2 CML Note 8 : CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic LOW state (VO < 0.8 V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic HIGH state (VO >2 V). Figure 1. Switching Time Test Circuit IF PULSE INPUT ( PW = 100 μs Duty = 10%) → VCC = 5 V 1 6 2 5 3 4 RL IF VO MONITORING NODE 0.1 μF tpHL tpLH VO 5V SHIELD IF MONITORING NODE 1.5V VOL Figure 2. Common Mode Noise Immunity Test Circuit. IF → SW A B 1 6 2 5 3 4 − VCM RL=1.9kΩ VO 0.1μF VCM tr VOH SW:B (IF= 0 mA) SHIELD + 90% VCC=5V VOL SW:A (IF = 16 mA) 4 tf 400 V 10% 0V CMH 2V 0.8 V CML 320 (V) tr (μs) CMH = CML = − 320 (V) tf (μs) 2007-10-01 TLP719 ΔVF / ΔTa – IF Forward current IF (mA) 50 30 Forward voltage temperature coefficient Δvf / Δta (mV / °C) IF – V F 100 Ta = 25°C 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 1.2 1.4 1.6 Forward voltage 1.8 VF 2.0 −2.6 −2.4 −2.2 −2.0 −1.8 −1.6 −1.4 0.1 0.3 0.5 3 Forward current (V) IOH(1) – Ta IF 5 10 30 (mA) IO – IF 10 300 (mA) 100 50 IO 30 Output current High level output current IOH(1) (nA) 1 10 5 3 VCC = 5 V 5 VO = 0.4 V 3 Ta = 25°C 1 0.5 0.3 0.1 0.05 0.03 1 0 40 80 120 Ambient temperature Ta 0.01 0.1 160 0.3 0.5 (°C) 1 (mA) IO / IF – Ta VCC = 5 V VO = 0.4 V 50 1.0 30 IO / IF (%) IO / IF IF 300 1.2 10 Normalized Ta = 25°C Current transfer ratio 30 50 100 10 5 Forward current IO / IF – IF 100 3 25°C 100°C 5 3 0.8 0.6 Normalized to IF = 16 mA 0.4 VCC = 4.5 V VO = 0.4 V 0.2 1 0.3 0.5 1 3 Forward current 5 10 IF 30 0 -40 50 (mA) -20 0 20 40 Ambient temperature 5 60 Ta 80 100 (°C) 2007-10-01 TLP719 IO – VO VO – IF VCC = 5 V 30mA 10 5 VO (V) (mA) 8 IO 20mA 4 RL Vo 15mA 4 10mA 2 IF = 5mA 1 3 2 4 Output voltage 5 VO 6 4 8 12 Forward current 16 20 IF (mA) 24 tpHL , tpLH - Ta 5 VCC=5V tpLH Ta=25℃ 3.9 kΩ 1 (V) I F =16mA 3 RL = 2 kΩ 0 0 7 tpHL, tpLH - RL 5 Ta = 25°C 2 10 kΩ Propagation delay time tpHL, tpLH (μs) Output current 6 Output voltage 3 0 0 Propagation delay time tpHL, tpLH (μs) VCC = 5V IF Ta = 25°C 25mA 1 0.5 tpHL 0.3 3 I F =16mA VCC=5V RL=1.9kΩ 1 0.5 tpHL 0.3 tpLH 0.1 1 3 5 10 30 50 0.1 -40 100 Load resistance R L (kΩ) -20 0 20 40 60 80 100 Ambient temperature Ta (℃) 6 2007-10-01 TLP719 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01