MAXIM MAX15070B

19-5516; Rev 1; 11/11
TION KIT
EVALUA BLE
IL
AVA A
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Features
The MAX15070A/MAX15070B are high-speed MOSFET
drivers capable of sinking 7A and sourcing 3A peak
currents. The ICs, which are an enhancement over
MAX5048 devices, have inverting and noninverting
inputs that provide greater flexibility in controlling the
MOSFET. They also feature two separate outputs working in complementary mode, offering flexibility in controlling both turn-on and turn-off switching speeds.
S Independent Source and Sink Outputs
S +4V to +14V Single Power-Supply Range
S 7A Peak Sink Current
S 3A Peak Source Current
S Inputs Rated to +14V Regardless of V+ Voltage
S 12ns Propagation Delay
The ICs have internal logic circuitry that prevents shootthrough during output-state changes. The logic inputs
are protected against voltage spikes up to +16V, regardless of V+ voltage. Propagation delay time is minimized
and matched between the inverting and noninverting
inputs. The ICs have a very fast switching time, combined with short propagation delays (12ns typ), making
them ideal for high-frequency circuits. The ICs operate
from a +4V to +14V single power supply and typically
consume 0.5mA of supply current. The MAX15070A has
standard TTL input logic levels, while the MAX15070B
has CMOS-like high-noise-margin (HNM) input logic
levels.
S Matched Delays Between Inverting and
Noninverting Inputs Within 500ps
S HNM or TTL Logic-Level Inputs
S Low-Input Capacitance: 10pF (typ)
S Thermal-Shutdown Protection
S Small SOT23 Package Allows Routing PCB Traces
Underneath
S -40°C to +125°C Operating Temperature Range
Ordering Information
Both ICs are available in a 6-pin SOT23 package and
operate over the -40NC to +125NC temperature range.
INPUT LOGIC
LEVELS
PART
Applications
TTL
6 SOT23
MAX15070AAUT/V+
4-14V
6 SOT23
MAX15070BAUT+
HNM
6 SOT23
MAX15070AAUT+
Power MOSFET Switching
Switch-Mode Power Supplies
DC-DC Converters
PIN-PACKAGE
Note: All devices are specified over the -40°C to +125°C
operating temperature range.
+Denotes a lead(Pb)-free/RoHS-compliant package.
/V Denotes an automotive-qualified part.
Motor Control
Power-Supply Modules
Typical Operating Circuit
V+
V+
IN+
P_OUT
MAX15070A
MAX15070B
N_OUT
IN-
N
GND
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
MAX15070A/MAX15070B
General Description
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V+, IN+, IN-........................................................... -0.3V to +16V
N_OUT, P_OUT............................................-0.3V to (V+ + 0.3V)
N_OUT Continuous Output Current (Note 1).................. -200mA
P_OUT Continuous Output Current (Note 1)................. +125mA
Continuous Power Dissipation (TA = +70NC)
SOT23 (derate 8.7mW/NC above +70NC)................... 696mW*
Operating Temperature Range ....................... -40NC to +125NC
Junction Temperature.................................................... +150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s).................................+300NC
Soldering Temperature (reflow).......................................+260NC
*As per JEDEC 51 standard.
Note 1: Continuous output current is limited by the power dissipation of the package.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
SOT23
Junction-to-Ambient Thermal Resistance (BJA).........115NC/W
Junction-to-Case Thermal Resistance (BJC)................... 80NC/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = +12V, CL = 0F, TA = TJ = -40NC to +125NC, unless otherwise noted. Typical values are at TA = +25NC. Parameters specified at
V+ = +4.5V apply to the MAX15070A only; see Figure 1.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY (V+)
Input Voltage Range
Undervoltage Lockout
VUVLO
MAX15070A
4
14
MAX15070B
6
14
V+ rising
3.3
Undervoltage-Lockout
Hysteresis
3.45
3.6
V
V
200
mV
Undervoltage Lockout to Output
Rising Delay
V+ rising
100
Fs
Undervoltage Lockout to Output
Falling Delay
V+ falling
2
Fs
Supply Current
IV+
V+ = 14V, no switching
V+ = 14V, switching at 1MHz
0.5
2.3
1
0.256
0.32
mA
n-CHANNEL OUTPUT (N_OUT)
N_OUT Resistance
RN_OUT
Power-Off Pulldown Resistance
V+ = +12V,
IN_OUT = -100mA
TA = +25NC
V+ = +4.5V,
IN_OUT = -100mA
TA = +25NC
IBIASN
VN_OUT = V+
Peak Output Current
IPEAKN
CL = 22nF
2
0.268
0.33
I
0.465
TA = +125NC
V+ = unconnected, IN_OUT = -1mA, TA = +25NC
Output Bias Current
0.45
TA = +125NC
1.3
1.9
kI
6
11
FA
7.0
A
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
(V+ = +12V, CL = 0F, TA = TJ = -40NC to +125NC, unless otherwise noted. Typical values are at TA = +25NC. Parameters specified at
V+ = +4.5V apply to MAX15070A only, see Figure 1.) (Note 3)
PARAMETER
SYMBOL
p-CHANNEL OUTPUT (P_OUT)
P_OUT Resistance
RP_OUT
Output Leakage Current
Peak Output Current
LOGIC INPUTS (IN+, IN-)
ILEAKP
IPEAKN
Logic-High Input Voltage
VIH
Logic-Low Input Voltage
VIL
Logic-Input Hysteresis
VHYS
CONDITIONS
V+ = +12V,
IP_OUT = 100mA
V+ = +4.5V,
IP_OUT = 100mA
MIN
TA = +25NC
TA = +125NC
TA = +25NC
TA = +125NC
Logic-Input Leakage Current
Logic-Input Bias Current
Input Capacitance
SWITCHING CHARACTERISTICS FOR V+ = +12V (Figure 1)
CL = 1nF
Rise Time
tR
CL = 5nF
CL = 10nF
CL = 1nF
Fall Time
tF
CL = 5nF
CL = 10nF
Turn-On Delay Time
tD-ON CL = 1nF (Note 4)
Turn-Off Delay Time
tD-OFF CL = 1nF (Note 4)
Break-Before-Make Time
tBBM
SWITCHING CHARACTERISTICS FOR V+ = +4.5V (MAX15070A only) (Figure 1)
CL = 1nF
Rise Time
tR
CL = 5nF
CL = 10nF
CL = 1nF
Fall Time
tF
CL = 5nF
CL = 10nF
Turn-On Delay Time
tD-ON CL = 1nF (Note 4)
Turn-Off Delay Time
tD-OFF CL = 1nF (Note 4)
Break-Before-Make Time
tBBM
THERMAL CHARACTERISTICS
Thermal Shutdown
Temperature rising (Note 4)
Thermal-Shutdown Hysteresis
(Note 4)
MAX
0.88
1.2
1.7
1.25
1.75
1
0.91
VP_OUT = 0V
CL = 22nF
MAX15070A
MAX15070B
MAX15070A
MAX15070B
MAX15070A
MAX15070B
VIN+ = VIN- = 0V or V+, MAX15070A
VIN+ = VIN- = 0V or V+, MAX15070B
TYP
0.01
3.0
2.0
4.25
0.2
0.9
0.02
10
10
7
7
I
FA
A
V
0.8
2.0
7
7
UNITS
6
22
36
4
11
17
11
12
2
5
16
25
4
10
14
13
14
2
166
13
V
V
FA
pF
ns
ns
17
18
ns
ns
ns
ns
ns
21
22
ns
ns
ns
NC
NC
Note 3: Limits are 100% tested at TA = +25°C. Limits over operating temperature range are guaranteed through correlation using
the statistical quality control (SQC) method.
Note 4: Design guaranteed by bench characterization. Limits are not production tested.
3
MAX15070A/MAX15070B
ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(CL = 1000pF, TA = +25NC, unless otherwise noted. See Figure 1.)
4.5
4.0
TA = -40°C
3.5
TA = +25°C
3.5
3.0
TA = -40°C
2.5
TA = 0°C
3.0
4.0
2.0
10
12
14
6
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
TA = +125°C
TA = +85°C
TA = +25°C
12
DUTY CYCLE = 50%
CL = 0
2.5
10
4
14
TA = 0°C
1MHz
2.0
500kHz
1.5
100kHz
1.0
6
8
10
TA = -40°C
12
6
4
6
8
10
12
14
SUPPLY CURRENT vs. LOAD CAPACITANCE
4.0
V+ = 12V
f = 100kHz
DUTY CYCLE = 50%
3.5
3.0
2.5
2.0
1.5
1.0
0.5
75kHz
40kHz
0
14
0
8
10
12
14
400
0
800
1200
1600
2000
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
LOAD CAPACITANCE (pF)
SUPPLY CURRENT vs. TEMPERATURE
MAX15070A INPUT THRESHOLD
VOLTAGE vs. SUPPLY VOLTAGE
MAX15070A
SUPPLY CURRENT vs. INPUT VOLTAGE
0.8
0.6
3.0
2.5
RISING
2.0
1.5
1.0
TEMPERATURE (°C)
1.3
1.2
1.1
1.0
INPUT LOW TO HIGH
0.9
INPUT HIGH TO LOW
0.8
0.7
0.6
FALLING
0.5
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
MAX15070A toc09
3.5
0.5
0.4
1.4
SUPPLY CURRENT (mA)
1.0
4.0
MAX15070A toc08
V+ = 12V
f = 100kHz, CL = 0
DUTY CYCLE = 50%
INPUT THRESHOLD VOLTAGE (V)
1.4
MAX15070A toc07
4
TA = -40°C
SUPPLY VOLTAGE (V)
0.5
8
4
12
3.0
MAX15070A toc04
PROPAGATION DELAY (ns)
18
1.2
10
SUPPLY CURRENT vs. SUPPLY VOLTAGE
20
14
8
SUPPLY VOLTAGE (V)
PROPAGATION DELAY (HIGH TO LOW)
vs. SUPPLY VOLTAGE
16
12
8
4
SUPPLY CURRENT (mA)
8
14
TA = 0°C
MAX15070A toc05
6
TA = +85°C
TA = +25°C
TA = 0°C
1.5
4
16
10
2.0
2.5
TA = +125°C
MAX15070A toc06
FALL TIME (ns)
5.0
TA = +85°C
TA = +125°C
MAX15070A toc03
4.5
18
PROPAGATION DELAY (ns)
5.0
TA = +25°C
5.5
MAX15070A toc02
6.0
RISE TIME (ns)
TA = +85°C
TA = +125°C
5.5
MAX15070A toc01
7.0
6.5
PROPAGATION DELAY (LOW TO HIGH)
vs. SUPPLY VOLTAGE
FALL TIME vs. SUPPLY VOLTAGE
RISE TIME vs. SUPPLY VOLTAGE
SUPPLY CURRENT (mA)
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
0.4
4
6
8
10
SUPPLY VOLTAGE (V)
12
14
0
1
2
3
4
INPUT VOLTAGE (V)
5
14
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, CL = 5000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, CL = 10,000pF)
MAX15070A toc10
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, CL = 5000pF)
MAX15070A toc11
VIN+
2V/div
MAX15070A toc12
VIN+
2V/div
VIN+
2V/div
VOUTPUT
2V/div
VOUTPUT
2V/div
VOUTPUT
2V/div
20ns/div
20ns/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, CL = 10,000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +14V, CL = 5000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +14V, CL = 10,000pF)
MAX15070A toc13
MAX15070A toc14
VIN+
2V/div
MAX15070A toc15
VIN+
5V/div
VIN+
5V/div
VOUTPUT
5V/div
VOUTPUT
5V/div
VOUTPUT
2V/div
20ns/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +14V, CL = 5000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +14V, CL = 10,000pF)
MAX15070A toc16
20ns/div
20ns/div
MAX15070A toc17
VIN+
5V/div
VIN+
5V/div
VOUTPUT
5V/div
VOUTPUT
5V/div
20ns/div
5
MAX15070A/MAX15070B
Typical Operating Characteristics (continued)
(CL = 1000pF, TA = +25NC, unless otherwise noted. See Figure 1.)
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Pin Configuration
TOP VIEW
IN+ 1
GND
2
+
6
V+
MAX15070A
MAX15070B
5
P_OUT
4
N_OUT
IN- 3
SOT23
Pin Description
PIN
NAME
1
IN+
Noninverting Logic Input. Connect IN+ to V+ when not used.
FUNCTION
2
GND
Ground
3
IN-
4
N_OUT
Driver Sink Output. Open-drain n-channel output. Sinks current for power MOSFET turn-off.
5
P_OUT
Driver Source Output. Open-drain p-channel output. Sources current for power MOSFET turn-on.
6
V+
Inverting Logic Input. Connect IN- to GND when not used.
Power-Supply Input. Bypass V+ to GND with a 1FF low-ESR ceramic capacitor.
Functional Diagram
V+
P
BREAKBEFOREMAKE
CONTROL
ININ+
P_OUT
N_OUT
N
MAX15070A
MAX15070B
6
GND
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
MAX15070A/MAX15070B
IN+
VIH
VIL
P_OUT AND
N_OUT
CONNECTED
TOGETHER
90%
10%
tD-OFF
tF
tD-ON
tR
TIMING DIAGRAM
V+
V+
MAX15070A
MAX15070B
INPUT
P_OUT
IN+
IN-
OUTPUT
N_OUT
GND
CL
TEST CIRCUIT
Figure 1. Timing Diagram and Test Circuit
Detailed Description
Logic Inputs
The MAX15070A/MAX15070Bs’ logic inputs are protected against voltage spikes up to +16V, regardless of
the V+ voltage. The low 10pF input capacitance of the
inputs reduces loading and increases switching speed.
These ICs have two inputs that give the user greater
flexibility in controlling the MOSFET. Table 1 shows all
possible input combinations. The difference between the
MAX15070A and the MAX15070B is the input threshold
voltage. The MAX15070A has TTL logic-level thresholds,
Table 1. Truth Table
while the MAX15070B has HNM (CMOS-like) logic-level
thresholds (see the Electrical Characteristics). Connect
IN+ to V+ or IN- to GND when not used. Alternatively,
the unused input can be used as an on/off control input
(Table 1).
Undervoltage Lockout (UVLO)
When V+ is below the UVLO threshold, the n-channel is
on and the p-channel is off, independent of the state of
the inputs. The UVLO is typically 3.45V with 200mV typical hysteresis to avoid chattering. A typical falling delay
of 2Fs makes the UVLO immune to narrow negative transients in noisy environments.
Driver Outputs
IN+
IN-
p-CHANNEL
n-CHANNEL
L
L
Off
On
L
H
Off
On
H
L
On
Off
H
H
Off
On
The ICs provide two separate outputs. One is an opendrain p-channel, the other an open-drain n-channel. They
have distinct current sourcing/sinking capabilities to independently control the rise and fall times of the MOSFET
gate. Add a resistor in series with P_OUT/N_OUT to slow
the corresponding rise/fall time of the MOSFET gate.
L = Logic-low, H = Logic-high.
7
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Applications Information
Supply Bypassing, Device
Grounding, and Placement
Ample supply bypassing and device grounding are
extremely important because when large external capacitive loads are driven, the peak current at the V+ pin can
approach 3A, while at the GND pin, the peak current can
approach 7A. VCC drops and ground shifts are forms of
negative feedback for inverters and, if excessive, can
cause multiple switching when the IN- input is used and
the input slew rate is low. The device driving the input
should be referenced to the ICs’ GND pin, especially
when the IN- input is used. Ground shifts due to insufficient device grounding can disturb other circuits sharing
the same AC ground return path. Any series inductance
in the V+, P_OUT, N_OUT, and/or GND paths can cause
oscillations due to the very high di/dt that results when
the ICs are switched with any capacitive load. A 1FF
or larger value ceramic capacitor is recommended,
bypassing V+ to GND and placed as close as possible
to the pins. When driving very large loads (e.g., 10nF)
at minimum rise time, 10FF or more of parallel storage
capacitance is recommended. A ground plane is highly
recommended to minimize ground return resistance and
series inductance. Care should be taken to place the
ICs as close as possible to the external MOSFET being
driven to further minimize board inductance and AC path
resistance.
Power Dissipation
Power dissipation of the ICs consists of three components, caused by the quiescent current, capacitive
charge and discharge of internal nodes, and the output
current (either capacitive or resistive load). The sum of
these components must be kept below the maximum
power-dissipation limit of the package at the operating
temperature.
The quiescent current is 0.5mA typical. The current
required to charge and discharge the internal nodes
is frequency dependent (see the Typical Operating
Characteristics).
For capacitive loads, the total power dissipation is
approximately:
P = CLOAD x (V+) 2 x FREQ
where CLOAD is the capacitive load, V+ is the supply
voltage, and FREQ is the switching frequency.
8
Layout Information
The ICs’ MOSFET drivers source and sink large currents
to create very fast rise and fall edges at the gate of the
switching MOSFET. The high di/dt can cause unacceptable ringing if the trace lengths and impedances are not
well controlled. The following PCB layout guidelines are
recommended when designing with the ICs:
•
Place one or more 1FF decoupling ceramic
capacitor(s) from V+ to GND as close as possible to
the IC. At least one storage capacitor of 10FF (min)
should be located on the PCB with a low resistance
path to the V+ pin of the ICs. There are two AC current loops formed between the IC and the gate of
the MOSFET being driven. The MOSFET looks like
a large capacitance from gate to source when the
gate is being pulled low. The active current loop is
from N_OUT of the ICs to the MOSFET gate to the
MOSFET source and to GND of the ICs. When the
gate of the MOSFET is being pulled high, the active
current loop is from P_OUT of the ICs to the MOSFET
gate to the MOSFET source to the GND terminal of
the decoupling capacitor to the V+ terminal of the
decoupling capacitor and to the V+ terminal of the
ICs. While the charging current loop is important, the
discharging current loop is critical. It is important to
minimize the physical distance and the impedance
in these AC current paths.
•
In a multilayer PCB, the component surface layer surrounding the ICs should consist of a GND plane containing the discharging and charging current loops.
Chip Information
Process: BiCMOS
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maxim-ic.com/packages. Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
6 SOT23
U6+1
21-0058
90-0175
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
REVISION
NUMBER
REVISION
DATE
0
11/10
Initial release
1
11/11
Added MAX15070AAVT/V+ to data sheet
DESCRIPTION
PAGES
CHANGED
—
1, 2, 3, 8, 9
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2011 Maxim Integrated Products 9
Maxim is a registered trademark of Maxim Integrated Products, Inc.
MAX15070A/MAX15070B
Revision History