MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers General Description Features The MAX15070A/MAX15070B are high-speed MOSFET drivers capable of sinking 7A and sourcing 3A peak currents. The ICs, which are an enhancement over MAX5048 devices, have inverting and noninverting inputs that provide greater flexibility in controlling the MOSFET. They also feature two separate outputs working in complementary mode, offering flexibility in controlling both turn-on and turn-off switching speeds. S Independent Source and Sink Outputs S +4V to +14V Single Power-Supply Range S 7A Peak Sink Current S 3A Peak Source Current S Inputs Rated to +14V Regardless of V+ Voltage S 12ns Propagation Delay The ICs have internal logic circuitry that prevents shootthrough during output-state changes. The logic inputs are protected against voltage spikes up to +16V, regardless of V+ voltage. Propagation delay time is minimized and matched between the inverting and noninverting inputs. The ICs have a very fast switching time, combined with short propagation delays (12ns typ), making them ideal for high-frequency circuits. The ICs operate from a +4V to +14V single power supply and typically consume 0.5mA of supply current. The MAX15070A has standard TTL input logic levels, while the MAX15070B has CMOS-like high-noise-margin (HNM) input logic levels. S Matched Delays Between Inverting and Noninverting Inputs Within 500ps S HNM or TTL Logic-Level Inputs S Low-Input Capacitance: 10pF (typ) S Thermal-Shutdown Protection S Small SOT23 Package Allows Routing PCB Traces Underneath S -40°C to +125°C Operating Temperature Range Ordering Information Both ICs are available in a 6-pin SOT23 package and operate over the -40NC to +125NC temperature range. INPUT LOGIC LEVELS PART Applications Power MOSFET Switching Switch-Mode Power Supplies MAX15070AAUT+ TTL 6 SOT23 MAX15070AAUT/V+ TTL 6 SOT23 HNM 6 SOT23 MAX15070BAUT+ DC-DC Converters PIN-PACKAGE Note: All devices are specified over the -40°C to +125°C operating temperature range. +Denotes a lead(Pb)-free/RoHS-compliant package. /V Denotes an automotive-qualified part. Motor Control Power-Supply Modules Typical Operating Circuit V+ V+ IN+ P_OUT MAX15070A MAX15070B N_OUT IN- N GND For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com. 19-5516; Rev 3; 5/13 MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers ABSOLUTE MAXIMUM RATINGS (Voltages referenced to GND.) V+, IN+, IN-........................................................... -0.3V to +16V N_OUT, P_OUT............................................-0.3V to (V+ + 0.3V) N_OUT Continuous Output Current (Note 1).................. -200mA P_OUT Continuous Output Current (Note 1)................. +125mA Continuous Power Dissipation (TA = +70NC) SOT23 (derate 8.7mW/NC above +70NC)................... 696mW* Operating Temperature Range ....................... -40NC to +125NC Junction Temperature.................................................... +150NC Storage Temperature Range............................ -65NC to +150NC Lead Temperature (soldering, 10s).................................+300NC Soldering Temperature (reflow).......................................+260NC *As per JEDEC 51 standard. Note 1: Continuous output current is limited by the power dissipation of the package. PACKAGE THERMAL CHARACTERISTICS (Note 2) SOT23 Junction-to-Ambient Thermal Resistance (BJA).........115NC/W Junction-to-Case Thermal Resistance (BJC)................... 80NC/W Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V+ = +12V, CL = 0F, TA = TJ = -40NC to +125NC, unless otherwise noted. Typical values are at TA = +25NC. Parameters specified at V+ = +4.5V apply to the MAX15070A only; see Figure 1.) (Note 3) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLY (V+) Input Voltage Range Undervoltage Lockout VUVLO MAX15070A 4 14 MAX15070B 6 14 V+ rising 3.3 Undervoltage-Lockout Hysteresis 3.45 3.6 V V 200 mV Undervoltage Lockout to Output Rising Delay V+ rising 100 Fs Undervoltage Lockout to Output Falling Delay V+ falling 2 Fs Supply Current IV+ V+ = 14V, no switching V+ = 14V, switching at 1MHz 0.5 2.3 1 0.256 0.32 mA n-CHANNEL OUTPUT (N_OUT) N_OUT Resistance RN_OUT Power-Off Pulldown Resistance V+ = +12V, IN_OUT = -100mA TA = +25NC V+ = +4.5V, IN_OUT = -100mA TA = +25NC IBIASN VN_OUT = V+ Peak Output Current IPEAKN CL = 22nF 2 0.268 0.33 I 0.465 TA = +125NC V+ = unconnected, IN_OUT = -1mA, TA = +25NC Output Bias Current 0.45 TA = +125NC 1.3 1.9 kI 6 11 FA 7.0 A Maxim Integrated MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers ELECTRICAL CHARACTERISTICS (continued) (V+ = +12V, CL = 0F, TA = TJ = -40NC to +125NC, unless otherwise noted. Typical values are at TA = +25NC. Parameters specified at V+ = +4.5V apply to MAX15070A only, see Figure 1.) (Note 3) PARAMETER SYMBOL p-CHANNEL OUTPUT (P_OUT) P_OUT Resistance RP_OUT Output Leakage Current Peak Output Current LOGIC INPUTS (IN+, IN-) ILEAKP IPEAKN Logic-High Input Voltage VIH Logic-Low Input Voltage VIL Logic-Input Hysteresis VHYS CONDITIONS V+ = +12V, IP_OUT = 100mA V+ = +4.5V, IP_OUT = 100mA MIN TA = +25NC TA = +125NC TA = +25NC TA = +125NC Logic-Input Leakage Current Logic-Input Bias Current Input Capacitance SWITCHING CHARACTERISTICS FOR V+ = +12V (Figure 1) CL = 1nF Rise Time tR CL = 5nF CL = 10nF CL = 1nF Fall Time tF CL = 5nF CL = 10nF Turn-On Delay Time tD-ON CL = 1nF (Note 4) Turn-Off Delay Time tD-OFF CL = 1nF (Note 4) Break-Before-Make Time tBBM SWITCHING CHARACTERISTICS FOR V+ = +4.5V (MAX15070A only) (Figure 1) CL = 1nF Rise Time tR CL = 5nF CL = 10nF CL = 1nF Fall Time tF CL = 5nF CL = 10nF Turn-On Delay Time tD-ON CL = 1nF (Note 4) Turn-Off Delay Time tD-OFF CL = 1nF (Note 4) Break-Before-Make Time tBBM THERMAL CHARACTERISTICS Thermal Shutdown Temperature rising (Note 4) Thermal-Shutdown Hysteresis (Note 4) MAX 0.88 1.2 1.7 1.25 1.75 1 0.91 VP_OUT = 0V CL = 22nF MAX15070A MAX15070B MAX15070A MAX15070B MAX15070A MAX15070B VIN+ = VIN- = 0V or V+, MAX15070A VIN+ = VIN- = 0V or V+, MAX15070B TYP 0.01 3.0 2.0 4.25 0.2 0.9 0.02 10 10 7 7 I FA A V 0.8 2.0 7 7 UNITS 6 22 36 4 11 17 11 12 2 5 16 25 4 10 14 13 14 2 166 13 V V FA pF ns ns 17 18 ns ns ns ns ns 21 22 ns ns ns NC NC Note 3: Limits are 100% tested at TA = +25°C. Limits over operating temperature range are guaranteed through correlation using the statistical quality control (SQC) method. Note 4: Design guaranteed by bench characterization. Limits are not production tested. Maxim Integrated 3 MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Typical Operating Characteristics (CL = 1000pF, TA = +25NC, unless otherwise noted. See Figure 1.) 4.5 4.0 TA = -40°C 3.5 TA = +25°C 3.5 3.0 TA = -40°C 2.5 TA = 0°C 3.0 4.0 2.0 10 12 14 6 SUPPLY VOLTAGE (V) SUPPLY CURRENT (mA) TA = +125°C TA = +85°C TA = +25°C 12 4 14 TA = 0°C 1MHz 2.0 500kHz 1.5 100kHz 1.0 6 8 10 TA = -40°C 12 6 4 6 8 10 12 14 SUPPLY CURRENT vs. LOAD CAPACITANCE 4.0 V+ = 12V f = 100kHz DUTY CYCLE = 50% 3.5 3.0 2.5 2.0 1.5 1.0 0.5 75kHz 40kHz 0 14 0 8 10 12 14 400 0 800 1200 1600 2000 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) LOAD CAPACITANCE (pF) SUPPLY CURRENT vs. TEMPERATURE MAX15070A INPUT THRESHOLD VOLTAGE vs. SUPPLY VOLTAGE MAX15070A SUPPLY CURRENT vs. INPUT VOLTAGE 0.8 0.6 3.0 2.5 RISING 2.0 1.5 1.0 TEMPERATURE (°C) 1.3 1.2 1.1 1.0 INPUT LOW TO HIGH 0.9 INPUT HIGH TO LOW 0.8 0.7 0.6 FALLING 0.5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 MAX15070A toc09 3.5 0.5 0.4 1.4 SUPPLY CURRENT (mA) 1.0 4.0 MAX15070A toc08 V+ = 12V f = 100kHz, CL = 0 DUTY CYCLE = 50% INPUT THRESHOLD VOLTAGE (V) 1.4 MAX15070A toc07 4 TA = -40°C SUPPLY VOLTAGE (V) 0.5 8 SUPPLY CURRENT (mA) DUTY CYCLE = 50% CL = 0 2.5 10 4 12 3.0 MAX15070A toc04 PROPAGATION DELAY (ns) 18 1.2 10 SUPPLY CURRENT vs. SUPPLY VOLTAGE 20 14 8 SUPPLY VOLTAGE (V) PROPAGATION DELAY (HIGH TO LOW) vs. SUPPLY VOLTAGE 16 12 8 4 SUPPLY CURRENT (mA) 8 14 TA = 0°C MAX15070A toc05 6 TA = +85°C TA = +25°C TA = 0°C 1.5 4 16 10 2.0 2.5 TA = +125°C MAX15070A toc06 FALL TIME (ns) 5.0 TA = +85°C TA = +125°C MAX15070A toc03 4.5 18 PROPAGATION DELAY (ns) 5.0 TA = +25°C 5.5 MAX15070A toc02 6.0 RISE TIME (ns) TA = +85°C TA = +125°C 5.5 MAX15070A toc01 7.0 6.5 PROPAGATION DELAY (LOW TO HIGH) vs. SUPPLY VOLTAGE FALL TIME vs. SUPPLY VOLTAGE RISE TIME vs. SUPPLY VOLTAGE 0.4 4 6 8 10 SUPPLY VOLTAGE (V) 12 14 0 1 2 3 4 5 14 INPUT VOLTAGE (V) Maxim Integrated MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Typical Operating Characteristics (continued) (CL = 1000pF, TA = +25NC, unless otherwise noted. See Figure 1.) INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +4V, CL = 5000pF) INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +4V, CL = 10,000pF) MAX15070A toc10 INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +4V, CL = 5000pF) MAX15070A toc11 VIN+ 2V/div MAX15070A toc12 VIN+ 2V/div VIN+ 2V/div VOUTPUT 2V/div VOUTPUT 2V/div VOUTPUT 2V/div 20ns/div 20ns/div 20ns/div INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +4V, CL = 10,000pF) INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +14V, CL = 5000pF) INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +14V, CL = 10,000pF) MAX15070A toc13 MAX15070A toc14 VIN+ 2V/div MAX15070A toc15 VIN+ 5V/div VIN+ 5V/div VOUTPUT 5V/div VOUTPUT 5V/div VOUTPUT 2V/div 20ns/div 20ns/div INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +14V, CL = 5000pF) INPUT VOLTAGE vs. OUTPUT VOLTAGE (V+ = +14V, CL = 10,000pF) MAX15070A toc16 20ns/div Maxim Integrated 20ns/div MAX15070A toc17 VIN+ 5V/div VIN+ 5V/div VOUTPUT 5V/div VOUTPUT 5V/div 20ns/div 5 MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Pin Configuration TOP VIEW IN+ 1 GND 2 + 6 V+ MAX15070A MAX15070B 5 P_OUT 4 N_OUT IN- 3 SOT23 Pin Description PIN NAME 1 IN+ Noninverting Logic Input. Connect IN+ to V+ when not used. FUNCTION 2 GND Ground 3 IN- 4 N_OUT Driver Sink Output. Open-drain n-channel output. Sinks current for power MOSFET turn-off. 5 P_OUT Driver Source Output. Open-drain p-channel output. Sources current for power MOSFET turn-on. 6 V+ Inverting Logic Input. Connect IN- to GND when not used. Power-Supply Input. Bypass V+ to GND with a 1FF low-ESR ceramic capacitor. Functional Diagram V+ P BREAKBEFOREMAKE CONTROL ININ+ P_OUT N_OUT N MAX15070A MAX15070B 6 GND Maxim Integrated MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers IN+ VIH VIL P_OUT AND N_OUT CONNECTED TOGETHER 90% 10% tD-OFF tF tD-ON tR TIMING DIAGRAM V+ V+ MAX15070A MAX15070B INPUT P_OUT IN+ IN- OUTPUT N_OUT GND CL TEST CIRCUIT Figure 1. Timing Diagram and Test Circuit Detailed Description Logic Inputs The MAX15070A/MAX15070Bs’ logic inputs are protected against voltage spikes up to +16V, regardless of the V+ voltage. The low 10pF input capacitance of the inputs reduces loading and increases switching speed. These ICs have two inputs that give the user greater flexibility in controlling the MOSFET. Table 1 shows all possible input combinations. The difference between the MAX15070A and the MAX15070B is the input threshold voltage. The MAX15070A has TTL logic-level thresholds, Table 1. Truth Table while the MAX15070B has HNM (CMOS-like) logic-level thresholds (see the Electrical Characteristics). Connect IN+ to V+ or IN- to GND when not used. Alternatively, the unused input can be used as an on/off control input (Table 1). Undervoltage Lockout (UVLO) When V+ is below the UVLO threshold, the n-channel is on and the p-channel is off, independent of the state of the inputs. The UVLO is typically 3.45V with 200mV typical hysteresis to avoid chattering. A typical falling delay of 2Fs makes the UVLO immune to narrow negative transients in noisy environments. Driver Outputs IN+ IN- p-CHANNEL n-CHANNEL L L Off On L H Off On H L On Off H H Off On The ICs provide two separate outputs. One is an opendrain p-channel, the other an open-drain n-channel. They have distinct current sourcing/sinking capabilities to independently control the rise and fall times of the MOSFET gate. Add a resistor in series with P_OUT/N_OUT to slow the corresponding rise/fall time of the MOSFET gate. L = Logic-low, H = Logic-high. Maxim Integrated 7 MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Applications Information Supply Bypassing, Device Grounding, and Placement Ample supply bypassing and device grounding are extremely important because when large external capacitive loads are driven, the peak current at the V+ pin can approach 3A, while at the GND pin, the peak current can approach 7A. VCC drops and ground shifts are forms of negative feedback for inverters and, if excessive, can cause multiple switching when the IN- input is used and the input slew rate is low. The device driving the input should be referenced to the ICs’ GND pin, especially when the IN- input is used. Ground shifts due to insufficient device grounding can disturb other circuits sharing the same AC ground return path. Any series inductance in the V+, P_OUT, N_OUT, and/or GND paths can cause oscillations due to the very high di/dt that results when the ICs are switched with any capacitive load. A 1FF or larger value ceramic capacitor is recommended, bypassing V+ to GND and placed as close as possible to the pins. When driving very large loads (e.g., 10nF) at minimum rise time, 10FF or more of parallel storage capacitance is recommended. A ground plane is highly recommended to minimize ground return resistance and series inductance. Care should be taken to place the ICs as close as possible to the external MOSFET being driven to further minimize board inductance and AC path resistance. Power Dissipation Power dissipation of the ICs consists of three components, caused by the quiescent current, capacitive charge and discharge of internal nodes, and the output current (either capacitive or resistive load). The sum of these components must be kept below the maximum power-dissipation limit of the package at the operating temperature. The quiescent current is 0.5mA typical. The current required to charge and discharge the internal nodes is frequency dependent (see the Typical Operating Characteristics). For capacitive loads, the total power dissipation is approximately: P = CLOAD x (V+) 2 x FREQ where CLOAD is the capacitive load, V+ is the supply voltage, and FREQ is the switching frequency. 8 Layout Information The ICs’ MOSFET drivers source and sink large currents to create very fast rise and fall edges at the gate of the switching MOSFET. The high di/dt can cause unacceptable ringing if the trace lengths and impedances are not well controlled. The following PCB layout guidelines are recommended when designing with the ICs: • Place one or more 1FF decoupling ceramic capacitor(s) from V+ to GND as close as possible to the IC. At least one storage capacitor of 10FF (min) should be located on the PCB with a low resistance path to the V+ pin of the ICs. There are two AC current loops formed between the IC and the gate of the MOSFET being driven. The MOSFET looks like a large capacitance from gate to source when the gate is being pulled low. The active current loop is from N_OUT of the ICs to the MOSFET gate to the MOSFET source and to GND of the ICs. When the gate of the MOSFET is being pulled high, the active current loop is from P_OUT of the ICs to the MOSFET gate to the MOSFET source to the GND terminal of the decoupling capacitor to the V+ terminal of the decoupling capacitor and to the V+ terminal of the ICs. While the charging current loop is important, the discharging current loop is critical. It is important to minimize the physical distance and the impedance in these AC current paths. • In a multilayer PCB, the component surface layer surrounding the ICs should consist of a GND plane containing the discharging and charging current loops. Chip Information Process: BiCMOS Package Information For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PACKAGE TYPE PACKAGE CODE OUTLINE NO. LAND PATTERN NO. 6 SOT23 U6+1 21-0058 90-0175 Maxim Integrated MAX15070A/MAX15070B 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Revision History REVISION NUMBER REVISION DATE 0 11/10 Initial release 1 11/11 Added MAX15070AAVT/V+ to data sheet 1, 2, 3, 8, 9 2 8/12 Removed Evaluation Kit Available banner 1 3 5/13 Updated Ordering Information 1 DESCRIPTION PAGES CHANGED — Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance. 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