EL7158 ® Data Sheet July 26, 2004 FN7349.1 Ultra-High Current Pin Driver Features The EL7158 high performance pin driver with three-state is suited to many ATE and level-shifting applications. The 12A peak drive capability makes this part an excellent choice when driving high capacitance loads. • Clocking speeds up to 40MHz The output pin OUT is connected to input pins VH or VL respectively, depending on the status of the IN pin. When the OE pin is active low, the output is placed in the three-state mode. The isolation of the output FETs from the power supplies enables VH and VL to be set independently, enabling level-shifting to be implemented. Related to the EL7155, the EL7158 adds a lower supply pin VS- and makes VL an isolated and independent input. This feature adds applications flexibility and improves switching response due to the increased enhancement of the output FETs. • 3.5pF typical input capacitance This pin driver has improved performance over existing pin drivers. It is specifically designed to operate at voltages down to 0V across the switch elements while maintaining good speed and on-resistance characteristics. • ATE/burn-in testers Available in the 8-pin SO package, the EL7158 is specified for operation over the full -40°C to +85°C temperature range. • CCD drivers Pinout Ordering Information EL7158 (8-PIN SO) TOP VIEW VS+ 1 OE 2 IN 3 • 0.5ns TON-TOFF prop delay mismatch • 12A peak drive • Low on resistance of 0.5Ω • High capacitive drive capability • Operates from 4.5V to 12V • Pb-free available Applications • Level shifting • IGBT drivers PACKAGE TAPE & REEL PKG. DWG. # EL7158IS 8-Pin SO - MDP0027 EL7158IS-T7 8-Pin SO 7” MDP0027 EL7158IS-T13 8-Pin SO 13” MDP0027 EL7158ISZ (See Note) 8-Pin SO (Pb-free) - MDP0027 6 VL EL7158ISZ-T7 (See Note) 8-Pin SO (Pb-free) 7” MDP0027 5 VS- EL7158ISZ-T13 (See Note) 8-Pin SO (Pb-free) 13” MDP0027 7 OUT GND 4 • 0.2ns rise and fall times mismatch PART NUMBER 8 VH L O G I C • 12ns tR/tF at 2000pF CLOAD NOTE: Intersil Pb-free products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J Std-020B. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc. All other trademarks mentioned are the property of their respective owners. EL7158 Absolute Maximum Ratings (TA = 25°C) Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C Ambient operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 125°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves Supply Voltage (VS+ to VS-) . . . . . . . . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.3V, VS +0.3V Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +12V, VH = +12V, VL = 0V, VS- = 0V, TA = 25°C, unless otherwise specified. DESCRIPTION CONDITION MIN TYP MAX UNIT INPUT VIH Logic ‘1’ Input Voltage IIH Logic ‘1’ Input Current VIL Logic ‘0’ Input Voltage IIL Logic ‘0’ Input Current CIN Input Capacitance 3.5 pF RIN Input Resistance 50 MΩ 2.4 VIH = VS+ V 0.1 VIL = 0V 0.1 10 µA 0.8 V 10 µA OUTPUT ROVH ON Resistance VH to OUT IOUT = -500mA 0.5 1 Ω ROVL ON Resistance VL to OUT IOUT = +500mA 0.5 1 Ω IOUT Output Leakage Current OE = 0V, OUT = VH/VL 0.1 10 µA IPK Peak Output Current (linear resistive operation) Source 12 A Sink 12 A Continuous Output Current Source/Sink IS Power Supply Current Inputs = VS+ 1.3 3 mA IVH Off Leakage at VH and VL VH, VL = 0V 4 10 µA IDC 500 mA POWER SUPPLY SWITCHING CHARACTERISTICS tR Rise Time CL = 2000pF 12.0 ns tF Fall Time CL = 2000pF 12.2 ns tRF∆ tR, tF Mismatch CL = 2000pF 0.2 ns tD-1 Turn-Off Delay Time CL = 2000pF 22.5 ns tD-2 Turn-On Delay Time CL = 2000pF 22.0 ns tD∆ tD-1-tD-2 Mismatch CL = 2000pF 0.5 ns tD-3 Three-State Delay Enable 22 ns tD-4 Three-State Delay Disable 22 ns SR+ VOUT+ Slew Rate RLOAD = 6Ω 800 V/µs SR- VOUT- Slew Rate RLOAD = 6Ω 800 V/µs 2 EL7158 Electrical Specifications PARAMETER VS+ = +12V, VH = +1.2V, VL = 0V, VS- = 0V, TA = 25°C, unless otherwise specified DESCRIPTION CONDITION MIN TYP MAX UNIT INPUT VIH Logic ‘1’ Input Voltage IIH Logic ‘1’ Input Current VIL Logic ‘0’ Input Voltage IIL Logic ‘0’ Input Current CIN Input Capacitance 3.5 pF RIN Input Resistance 50 MΩ 2.0 VIH = VS+ V 0.1 VIL = 0V 0.1 10 µA 0.8 V 10 µA OUTPUT ROVH ON Resistance VH to OUT IOUT = -500mA 0.5 1 Ω ROVL ON Resistance VL to OUT IOUT = +500mA 0.5 1 Ω IOUT Output Leakage Current OE = 0V, OUT = VH/VL 0.1 10 µA IPK Peak Output Current (linear resistive operation) Source 1.2 A Sink 1.2 A Continuous Output Current Source/Sink IS Power Supply Current Inputs = VS+ 1 2.5 mA VH Off Leakage at VH and VL VH, VL = 0V 4 10 µA IDC 500 mA POWER SUPPLY SWITCHING CHARACTERISTICS tR Rise Time CL = 2000pF 11 ns tF Fall Time CL = 2000pF 11 ns tRF∆ tR, tF Mismatch CL = 2000pF 0 ns tD-1 Turn-Off Delay Time CL = 2000pF 20.5 ns tD-2 Turn-On Delay Time CL = 2000pF 20.0 ns tD∆ tD-1-tD-2 Mismatch CL = 2000pF 0.5 ns tD-3 Three-State Delay Enable 20 ns tD-4 Three-State Delay Disable 20 ns SR+ VOUT+ Slew Rate RLOAD = 6Ω 80 V/µs SR- VOUT- Slew Rate RLOAD = 6Ω 80 V/µs 3 EL7158 Typical Performance Curves T=25°C 2.0 INPUT VOLTAGE (V) HIGH THRESHOLD 1.6 HYSTERESIS 1.4 1.2 LOW THRESHOLD SUPPLY CURRENT (mA) 1.8 1.0 T=25°C 1.6 1.2 ALL INPUTS = GND 0.8 0.4 ALL INPUTS = VS+ 0 5 10 5 12 SUPPLY VOLTAGE (V) FIGURE 1. INPUT THRESHOLD vs SUPPLY VOLTAGE FIGURE 2. QUIESCENT SUPPLY CURRENT vs SUPPLY VOLTAGE IOUT=500mA, T=25°C, VS+=VH, VS-=VL=0V 15 RISE/FALL TIME (ns) “ON” RESISTANCE (Ω) 0.8 VH TO VOUT 0.7 0.6 0.5 0.4 VOUT TO VL 5 7.5 10 CL=2000pF, T=25°C, VS+=VH, VS-=VL=0V 14 tR 13 12 tF 11 12.5 5 6 SUPPLY VOLTAGE (V) 30 9 10 11 12 CL=2000pF, T=25°C, VS+=VH=12V, VS-=VL=0V 28 16 ttrr DELAY TIME (ns) RISE/FALL TIME (ns) 8 FIGURE 4. RISE/FALL TIME vs SUPPLY VOLTAGE CL=2000pF, VS+=VH=12V, VS-=VL=0V 14 12 tR 26 20 0 50 100 150 TEMPERATURE (°C) FIGURE 5. RISE/FALL TIME vs TEMPERATURE 4 tD1 24 22 10 8 -50 7 SUPPLY VOLTAGE (V) FIGURE 3. “ON” RESISTANCE vs SUPPLY VOLTAGE (VS+) 18 12 10 SUPPLY VOLTAGE (V) tD2 5 6 7 8 9 10 11 12 SUPPLY VOLTAGE (V) FIGURE 6. PROPAGATION DELAY vs SUPPLY VOLTAGE EL7158 Typical Performance Curves 26 (Continued) CL=2000pF, VS+=VH=12V, VS-=VL=0V 70 VS+=+12V, T=25°C 60 tD1 22 tD2 20 50 RISE/FALL TIME (ns) DELAY TIME (ns) 24 40 tF 30 20 tR 10 18 -50 -25 0 25 50 75 100 0 100 125 LOAD CAPACITANCE (pF) TEMPERATURE (°C) FIGURE 7. PROPAGATION DELAY vs TEMPERATURE FIGURE 8. RISE/FALL TIME vs LOAD CAPACITANCE VS+=VH=12V, VS-=VL=0V, T=25°C, f=20kHz 100 4 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 5 3 2 1 0 100 1K CL=1000pF, T=25°C VS+=12V 10 VS+=10V 1.0 VS+=5V 0.1 10K 10K 100K LOAD CAPACITANCE (pF) 1.4 POWER DISSIPATION (W) POWER DISSIPATION (W) 0.9 0.8 0.7 625mW 0.6 θ JA 0.4 0.3 SO 8 =1 60 °C /W 0.2 0.1 0 0 25 75 85 100 50 125 150 AMBIENT TEMPERATURE (°C) FIGURE 11. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE 5 10M FIGURE 10. SUPPLY CURRENT vs FREQUENCY JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 0.5 1M FREQUENCY (Hz) FIGURE 9. SUPPLY CURRENT vs LOAD CAPACITANCE 1 10K 1K JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 1.2 1 909mW 0.8 θ JA 0.6 =1 SO 8 10 0.4 °C /W 0.2 0 0 25 50 75 85 100 125 150 AMBIENT TEMPERATURE (°C) FIGURE 12. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE EL7158 TABLE 1. TRUTH TABLE TABLE 2. OPERATING VOLTAGE RANGE OE IN OUT PIN MIN MAX 0 0 Three-State GND - VS- -5 0 0 1 Three-State VS+ - VS- 5 18 1 0 VH V H - VL 0 12 1 1 VL VS+ - VH 0 12 VS+ - GND 5 12 VL - VS- 0 12 Three-State Output VL VH 5V INPUT 2.5V 0 INVERTED OUTPUT 90% 10% tD2 tD1 tF tR FIGURE 13. TIMING DIAGRAM VH VS+ 4.7µ 0.1µ VS+ 4.7µ 10K 1 0.1µ 2 OE IN 3 GND 4 8 L O G I C OUT 7 2000p 6 5 0.1µ VL 4.7µ EL7158 0.1µ FIGURE 14. STANDARD TEST CONFIGURATION 6 4.7µ VS- EL7158 Pin Descriptions PIN NAME FUNCTION 1 VS+ Positive Supply Voltage 2 OE Output Enable EQUIVALENT CIRCUIT VS+ INPUT VSCircuit 1 3 IN Input Reference Circuit 1 4 GND Ground 5 VS- Negative Supply Voltage 6 VL Lower Output Voltage 7 OUT Output VH VSVS+ VOUT VSVSVL Circuit 2 8 VH High Output Voltage VH OE VS+ IN LEVEL SHIFTER 3-STATE CONTROL OUT GND VSVL FIGURE 15. BLOCK DIAGRAM 7 EL7158 Applications Information Product Description The EL7158 is a high performance 40MHz pin driver. It contains two analog switches connecting VH and VL to OUT. Depending on the value of the IN pin, one of the two switches will be closed and the other switch open. An output enable (OE) is also supplied which opens both switches simultaneously. Due to the topology of the EL7158, both the VH and VL pins can be connected to any voltage between the VS+ and VSpins, but VH must be greater than VL in order to prevent turning on the body diode at the output stage. Three-State Operation When the OE pin is low, the output is three-state (floating.) The output voltage is the parasitic capacitance’s voltage. It can be any voltage between VH and VL, depending on the previous state. At three-state, the output voltage can be pushed to any voltage between VH and VL. The output voltage can’t be pushed higher than VH or lower than VL since the body diode at the output stage will turn on. Supply Voltage Range and Input Compatibility The EL7158 is designed for operation on supplies from 5V to 18V (4.5V to 18V maximum). Table 2 shows the specifications for the relationship between the VS+, VS-, VH, VL, and GND pins. All input pins are compatible with both 3V and 5V CMOS signals. With a positive supply (VS+) of 5V, the EL7158 is also compatible with TTL inputs. Power Supply Bypassing When using the EL7158, it is very important to use adequate power supply bypassing. The high switching currents developed by the EL7158 necessitate the use of a bypass capacitor between the supplies (VS+ & VS-) and GND pins. It is recommended that a 2.2µF tantalum capacitor be used in parallel with a 0.1µF low-inductance ceramic MLC capacitor. These should be placed as close to the supply pins as possible. It is also recommended that the VH and VL pins have some level of bypassing, especially if the EL7158 is driving highly capacitive loads. Power Dissipation Calculation When switching at high speeds, or driving heavy loads, the EL7158 drive capability is limited by the rise in die temperature brought about by internal power dissipation. For reliable operation die temperature must be kept below TJMAX (125°C). It is necessary to calculate the power dissipation for a given application prior to selecting the package type. Power dissipation may be calculated: 2 2 PD = ( V S × I S ) + ( C INT × V S × f ) + ( C L × V OUT × f ) where: VS is the total power supply to the EL7158 (from VS+ to GND) VOUT is the swing on the output (VH - VL) CL is the load capacitance CINT is the internal load capacitance (100pF max) IS is the quiescent supply current (3mA max) f is frequency Having obtained the application’s power dissipation, a maximum package thermal coefficient may be determined, to maintain the internal die temperature below TJMAX: T JMAX – T MAX θ JA = ---------------------------------------PD where: TJMAX is the maximum junction temperature (125°C) TMAX is the maximum operating temperature PD is the power dissipation calculated above θJA thermal resistance on junction to ambient θJA is 160°C/W for the SO8 package when using a standard JEDEC JESD51-3 single-layer test board. If TJMAX is greater than 125°C when calculated using the equation above, then one of the following actions must be taken: Reduce θJA the system by designing more heat-sinking into the PCB (as compared to the standard JEDEC JESD51-3) De-rate the application either by reducing the switching frequency, the capacitive load, or the maximum operating (ambient) temperature (TMAX) All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 8