19-1053; Rev 0; 10/07 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Features The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output transistors with independent outputs allowing for control of the external MOSFET’s rise and fall time. The MAX15024 is a single gate driver capable of sinking an 8A peak current and sourcing a 4A peak current. The MAX15025 is a dual gate driver capable of sinking a 4A peak current and sourcing a 2A peak current. An integrated adjustable LDO voltage regulator provides gatedrive amplitude control and optimization. o 8A Peak Sink Current/4A Peak Source Current (MAX15024) The MAX15024A/C and MAX15025A/C/E/G accept transistor-to-transistor (TTL) input logic levels while the MAX15024B/D and MAX15025B/D/F/H accept CMOSinput logic levels. High sourcing/sinking peak currents, a low propagation delay, and thermally enhanced packages make the MAX15024/MAX15025 ideal for high-frequency and high-power circuits. The MAX15024/ MAX15025 operate from a 4.5V to 28V supply. A separate output driver supply input enhances flexibility and permits a soft-start of the power MOSFETs used in synchronous rectifiers. o Independent Source and Sink Outputs (MAX15024) The MAX15024/MAX15025 are available in 10-pin TDFN packages and are specified over the -40°C to +125°C automotive temperature range. Applications o 4A Peak Sink Current/2A Peak Source Current (MAX15025) o Low 16ns Propagation Delay o 4.5V to 28V Supply Voltage Range o On-Board Adjustable LDO for Gate-Drive Amplitude Control and Optimization o Separate Output Driver Supply o Matched Delays Between Inverting and Noninverting Inputs (MAX15024) o Matched Delays Between Channels (MAX15025) o CMOS or TTL Logic-Level Inputs with Hysteresis for Noise Immunity o -40°C to +125°C Operating Temperature Range o Thermal-Shutdown Protection o 1.95W Thermally Enhanced TDFN Power Packages Ordering Information PART PIN-PACKAGE Synchronous Rectifier Drivers Power-Supply Modules Switching Power Supply Pin Configurations REG DRV P_OUT N_OUT PGND TOP VIEW 10 9 8 7 6 MAX15024 4 5 IN- VCC *EP = EXPOSED PAD. 3 IN+ 2 GND 1 FB/SET EP* TDFN Pin Configurations continued at end of data sheet. PKG CODE TOP MARK MAX15024AATB+T* 10 TDFN-EP** T1033-1 ATX MAX15024BATB+T 10 TDFN-EP** T1033-1 ATY MAX15024CATB+T* 10 TDFN-EP** T1033-1 — MAX15024DATB+T* 10 TDFN-EP** T1033-1 — MAX15025AATB+T 10 TDFN-EP** T1033-1 ATZ MAX15025BATB+T* 10 TDFN-EP** T1033-1 AUA MAX15025CATB+T* 10 TDFN-EP** T1033-1 AUB MAX15025DATB+T* 10 TDFN-EP** T1033-1 AUC MAX15025EATB+T* 10 TDFN-EP** T1033-1 — MAX15025FATB+T* 10 TDFN-EP** T1033-1 — MAX15025GATB+T* 10 TDFN-EP** T1033-1 — MAX15025HATB+T* 10 TDFN-EP** T1033-1 — Note: All devices are specified over the -40°C to +125°C operating temperature range. +Denotes a lead-free package. *Future product—contact factory for availability. **EP = Exposed pad. T = Tape and reel. See the Selector Guide at the end of the data sheet. Block Diagrams appear at end of data sheet. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX15024/MAX15025 General Description MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers ABSOLUTE MAXIMUM RATINGS Continuous Power Dissipation (TA = +70°C) 10-Pin TDFN, Single-Layer Board (derate 18.5mW/°C above +70°C) ...........................1481.5mW Junction-to-Case Thermal Resistance ............................8.5°C/W 10-Pin TDFN, Multilayer Board (derate 24.4mW/°C above +70°C) ...........................1951.2mW Junction-to-Case Thermal Resistance ............................8.5°C/W Operating Temperature Range .........................-40°C to +125°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C VCC to GND ............................................................-0.3V to +30V REG to GND ..............-0.3V to the lower of +22V or (VCC + 0.3V) DRV to PGND .........................................................-0.3V to +22V IN_ ..........................................................................-0.3V to +22V FB/SET to GND.........................................................-0.3V to +6V P_OUT to DRV ........................................................-22V to +0.3V N_OUT to PGND.....................................................-0.3V to +22V OUT1, OUT2 to PGND ..............................-0.3V to (VDRV + 0.3V) PGND to GND .......................................................-0.3V to +0.3V P_OUT, N_OUT Continuous Source/Sink Current* .......... 200mA OUT1, OUT2 Continuous Source/Sink Current*................200mA *Continuous output current is limited by the power dissipation of the package. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MAX15024 ELECTRICAL CHARACTERISTICS (VCC = VDRV = VREG = 10V, FB/SET = GND, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = TJ = + 25°C). (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SYSTEM SPECIFICATIONS Input Voltage Range VDRV Turn-On Voltage VCC MAX15024B/D 6.5 28.0 MAX15024A/C 4.5 28.0 VCC = VREG = VDRV (MAX15024D) 6.5 18.0 VCC = VREG = VDRV (MAX15024C) 4.5 18.0 V VCC = VREG = 10V, IN+ = VCC, IN- = GND 1.7 2.3 V Quiescent Supply Current IN_ = VCC or GND 700 1350 µA Quiescent Supply Current Under UVLO Condition IN_ = VCC or GND 250 Switching Supply Current Switching at 250kHz, CL = 0 1.5 3.0 mA 3.4 3.8 V VCC Undervoltage Lockout VDRV_ON VCC powered only, VREG = VDRV decoupled with minimum 1µF to GND UVLO_ VCC VCC rising 3.0 VCC Undervoltage-Lockout Hysteresis µA 300 VCC Undervoltage Lockout to Output Delay VCC rising 100 VCC falling 2 mV µs REG REGULATOR (VCC = 12V, REG = VDRV, CL = 1µF, FB/SET = GND) Output Voltage VREG Dropout Voltage VR_DO 10 11 VCC = 6.5V, ILOAD = 100mA 0.4 0.9 VCC = 4.5V, ILOAD = 50mA 0.2 0.5 12V < VCC < 28V, 0 < ILOAD < 10mA 9 V V Load Regulation VCC = 12V, ILOAD = 0 to 100mA 1 % Line Regulation 12V < VCC < 28V 10 mV FB/SET Reference Voltage External resistive divider connected at FB/SET FB/SET Threshold VFB falling FB/SET Input Leakage Current VFB = 5.5V (Note 2) 2 1.10 1.23 1.35 220 -125 _______________________________________________________________________________________ V mV +125 nA Single/Dual, 16ns, High Sink/Source Current Gate Drivers (VCC = VDRV = VREG = 10V, FB/SET = GND, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = TJ = + 25°C). (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX TA = +25°C 0.45 0.60 TA = +125°C 0.625 0.850 VCC = VREG = VDRV = 4.5V, TA = +25°C sinking 100mA TA = +125°C (MAX15024C/D) 0.50 0.65 0.7 0.9 UNITS DRIVER OUTPUT (SINK) VCC = VREG = VDRV = 10V, sinking 100mA Driver Output Resistance Peak Output Current RON-N IPK-N N_OUT = 10V SOA condition: CL x VDRV2 ≤ 20µJ, Maximum Load Capacitance for VDRV = 10V Latchup Robustness Ω 8 A 200 nF 500 mA DRIVER OUTPUT (SOURCE) TA = +25°C 0.875 1.500 TA = +125°C 1.2 2.0 VCC = VREG = VDRV = 4.5V, TA = +25°C sourcing 100mA TA = +125°C (MAX15024C/D) 0.95 1.65 1.25 2.20 VCC = VREG = VDRV = 10V, sourcing 100mA Driver Output Resistance Peak Output Current RON-P IPK-P P_OUT = 0V Latchup Robustness Ω 4 A 500 mA LOGIC INPUTS Logic 1 Input Voltage VIH Logic 0 Input Voltage VIL Logic Input Hysteresis Logic Input Current Leakage MAX15024A/C 2.0 MAX15024B/D 4.25 V MAX15024A/C 0.8 MAX15024B/D 2 MAX15024A/C 0.4 MAX15024B/D 1 VIN = 18V or GND -75 Input Capacitance 0.01 V V +75 10 µA pF SWITCHING CHARACTERISTICS FOR VCC = VDRV = VREG = 10V, P_OUT AND N_OUT ARE CONNECTED TOGETHER (see Figure 1) Rise Time tR Fall Time tF CLOAD = 1nF 3 CLOAD = 5nF 12 CLOAD = 10nF 24 CLOAD = 1nF 3 CLOAD = 5nF 8 CLOAD = 10nF 16 ns ns Turn-On Delay Time tD-ON CLOAD = 1nF (Note 2) 8 16 32 ns Turn-Off Delay Time tD-OFF CLOAD = 1nF (Note 2) 8 16 32 ns Mismatch Propagation Delays from Inverting and Noninverting Inputs to Output CLOAD = 1nF 1 ns _______________________________________________________________________________________ 3 MAX15024/MAX15025 MAX15024 ELECTRICAL CHARACTERISTICS (continued) MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers MAX15024 ELECTRICAL CHARACTERISTICS (continued) (VCC = VDRV = VREG = 10V, FB/SET = GND, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = TJ = + 25°C). (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SWITCHING CHARACTERISTICS FOR VCC = VDRV = VREG = 4.5V (see Figure 1) (MAX15024C/D) Rise Time Fall Time tR tF CLOAD = 1nF 3 CLOAD = 5nF 11 CLOAD = 10nF 22 CLOAD = 1nF 2.5 CLOAD = 5nF 8 CLOAD = 10nF 16 ns ns Turn-On Delay Time tD-ON CLOAD = 1nF 18 ns Turn-Off Delay Time tD-OFF CLOAD = 1nF 18 ns CLOAD = 1nF 2 ns 15 ns +160 °C 15 °C Mismatch Propagation Delays from Inverting and Noninverting Inputs to Output Minimum Input Pulse Width that Changes the Output tPW THERMAL CHARACTERISTICS Thermal-Shutdown Temperature Temperature rising Thermal-Shutdown Temperature Hysteresis MAX15025 ELECTRICAL CHARACTERISTICS (VCC = VDRV = VREG = 10V, FB/SET = GND, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = TJ = +25°C). (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX 6.5 28 4.5 28 UNITS SYSTEM SPECIFICATIONS Input Voltage Range VCC VCC powered only, MAX15025B/D/F/H VR = VDRV decoupled with minimum 1µF MAX15025A/C/E/G to GND VCC = VREG = VDRV (MAX15025F/H) 6.5 18.0 VCC = VREG = VDRV (MAX15025E/G) 4.5 18.0 V VCC = VREG = 10V, IN1 = VCC, IN2 = VCC (MAX15025A/B/E/F) or GND for (MAX15025C/D/G/H) 1.7 2.3 V Quiescent Supply Current IN_ = VCC or GND 700 1350 µA Quiescent Supply Current Under UVLO Condition IN_ = VCC or GND 250 VDRV Turn-On Voltage VDRV_ON Switching Supply Current VCC Undervoltage Lockout 4 Switching at 250kHz, CL = 0 UVLO_ VCC VCC rising 3.0 µA 1.5 3.0 mA 3.4 3.8 V _______________________________________________________________________________________ Single/Dual, 16ns, High Sink/Source Current Gate Drivers (VCC = VDRV = VREG = 10V, FB/SET = GND, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = TJ = +25°C). (Note 1) PARAMETER SYMBOL CONDITIONS MIN VCC Undervoltage-Lockout Hysteresis TYP MAX 300 VCC Undervoltage Lockout to Output Delay VCC rising 100 VCC falling 2 UNITS mV µs REG REGULATOR (VCC = 12V, VREG = VDRV, CL = 1µF, FB/SET = GND) Output Voltage VREG Dropout Voltage VR_DO 12V < VCC < 28V, 0 < ILOAD < 10mA 10 11 VCC = 6.5V, ILOAD = 100mA 9 0.4 0.9 VCC = 4.5V, ILOAD = 50mA 0.2 0.5 V V Load Regulation VCC = 12V, ILOAD = 0 to 100mA 1 % Line Regulation 12V < VCC < 28V 10 mV FB/SET Reference Voltage External resistive divider connected at FB/SET FB/SET Threshold VFB rising FB/SET Input Leakage Current VFB = 5.5V 1.10 1.23 1.35 220 -125 V mV +125 nA DRIVER OUTPUT SINK VCC = VREG = VDRV = 10V, sinking 100mA Driver Output Resistance Peak Output Current RON-N IPK-N VCC = VREG = VDRV = 4.5V, sinking 100mA (MAX15025E/F/G/H) TA = +25°C 1.0 1.6 TA = +125°C 1.25 2.10 TA = +25°C 1.10 1.65 TA = +125°C 1.5 2.2 OUT_ = 10V SOA condition: CL x VDRV2 ≤ 20µJ, Maximum Load Capacitance for VDRV = 10V Latchup Robustness Ω 4 A 100 nF 500 mA DRIVER OUTPUT SOURCE VCC = VREG = VDRV = 10V, sourcing 100mA Driver Output Resistance Peak Output Current RON-P IPK-P VCC = VREG = VDRV = 4.5V, sourcing 100mA (MAX15025E/F/G/H) TA = +25°C 1.75 2.50 TA = +125°C 2.25 3.50 TA = +25°C 1.85 2.60 TA = +125°C 2.50 3.75 OUT_ = 0V Latchup Robustness Ω 2 A 500 mA LOGIC INPUTS Logic 1 Input Voltage VIH Logic 0 Input Voltage VIL Logic Input Hysteresis Logic Input Current Leakage Input Capacitance MAX15025A/C/E/G 2.0 MAX15025B/D/F/H 4.25 V MAX15025A/C/E/G 0.8 MAX15025B/D/F/H 2 MAX15025A/C/E/G 0.4 MAX15025B/D/F/H 1 VIN = 18V or GND -75 +0.01 10 V V +75 µA pF _______________________________________________________________________________________ 5 MAX15024/MAX15025 MAX15025 ELECTRICAL CHARACTERISTICS (continued) MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers MAX15025 ELECTRICAL CHARACTERISTICS (continued) (VCC = VDRV = VREG = 10V, FB/SET = GND, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = TJ = +25°C). (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SWITCHING CHARACTERISTICS FOR VCC = VDRV = VREG = 10V (see Figure 1) Rise Time Fall Time tR tF CLOAD = 1nF 6 CLOAD = 5nF 24 CLOAD = 10nF 48 CLOAD = 1nF 5 CLOAD = 5nF 16 CLOAD = 10nF ns ns 32 Turn-On Delay Time tD-ON CLOAD = 1nF (Note 2) 8 16 32 ns Turn-Off Delay Time tD-OFF CLOAD = 1nF (Note 2) 8 16 32 ns Mismatch Propagation Delays Between 2 Channels CLOAD = 1nF 1 ns SWITCHING CHARACTERISTICS FOR VCC = VDRV = VREG = 4.5V (see Figure 1) (MAX15025E/F/G/H) Rise Time Fall Time tR tF CLOAD = 1nF 5 CLOAD = 5nF 20 CLOAD = 10nF 42 CLOAD = 1nF 4 CLOAD = 5nF 15 ns ns CLOAD = 10nF 30 Turn-On Delay Time tD-ON CLOAD = 1nF 18 ns Turn-Off Delay Time tD-OFF CLOAD = 1nF 18 ns CLOAD = 1nF 2 ns 15 ns +160 °C 15 °C Mismatch Propagation Delays Between 2 Channels Minimum Input Pulse Width that Changes the Output tPW THERMAL CHARACTERISTICS Thermal-Shutdown Temperature Thermal-Shutdown Temperature Hysteresis Temperature rising Note 1: All devices are 100% production tested at TA = +25°C. Limits over temperature are guaranteed by design. Note 2: Design guaranteed by bench characterization. Limits are not production tested. 6 _______________________________________________________________________________________ Single/Dual, 16ns, High Sink/Source Current Gate Drivers FALL TIME vs. SUPPLY VOLTAGE (WITH 5nF LOAD) TA = +85°C 20 TA = +25°C TA = 0°C 10 25 TA = +125°C TA = +85°C 20 15 TA = -40°C TA = 0°C TA = +25°C 18 16 MAX15024/25 toc03 MAX15025 FALL TIME (ns) RISE TIME (ns) 30 30 MAX15024/25 toc02 MAX15025 TA = +125°C MAX15024/25 toc01 40 PROPAGATION DELAY TIME vs. TEMPERATURE (1nF LOAD) PROPAGATION DELAY TIME (ns) RISE TIME vs. SUPPLY VOLTAGE (DUAL DRIVER WITH 5nF LOAD) RISING 14 12 FALLING 10 8 TA = -40°C 10 0 14 16 18 20 -60 -40 -20 0 20 40 60 80 100 120 140 SUPPLY VOLTAGE (V) TEMPERATURE (°C) SUPPLY CURRENT vs. SUPPLY VOLTAGE (PROGRAMMED EXTERNALLY TO 5V) SUPPLY CURRENT vs. LOAD CAPACITANCE SUPPLY CURRENT vs. TEMPERATURE 1500 75kHz 100kHz 1000 500 24 SWITCHING 250kHz 18 12 NOT SWITCHING 6 40kHz 4 6 8 1400 SWITCHING 250kHz 1200 1000 800 600 NOT SWITCHING 400 0 0 10 12 14 16 18 20 0 2000 4000 6000 8000 10,000 -40 0 40 80 120 SUPPLY VOLTAGE (V) LOAD CAPACITANCE (nF) TEMPERATURE (°C) INPUT THRESHOLD VOLTAGE vs. SUPPLY VOLTAGE (TTL) SUPPLY CURRENT vs. LOGIC IN LOGIC INPUT VOLTAGE vs. OUTPUT VOLTAGE (5nF RISING) 2.5 RISING 2.0 1.5 1.0 FALLING MAX15024/25 toc09 1600 MAX15024/25 toc08 MAX15024/25 toc07 3.0 INPUT LOW TO HIGH 1400 SUPPLY CURRENT (µA) 2 VCC = VREG = VDRV = 10V 1600 200 0 0 1800 MAX15024/25 toc06 VCC = VREG = VDRV = 10V SUPPLY CURRENT (µA) 500kHz MAX15024/25 toc05 2000 30 SUPPLY CURRENT (mA) MAX15024/25 toc04 1MHz SUPPLY CURRENT (µA) 12 SUPPLY VOLTAGE (V) 2500 INPUT THRESHOLD VOLTAGE (V) 6 10 10 11 12 13 14 15 16 17 18 19 20 1200 MAX15025 IN_ 1V/div 1000 800 OUT_ 5V/div INPUT HIGH TO LOW 600 400 0.5 200 0 00 4 8 12 SUPPLY VOLTAGE (V) 16 20 0 1 2 3 4 5 6 20ns/div INPUT VOLTAGE (V) _______________________________________________________________________________________ 7 MAX15024/MAX15025 Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Typical Operating Characteristics (continued) (TA = +25°C, unless otherwise noted.) LOGIC INPUT VOLTAGE vs. OUTPUT VOLTAGE (5nF FALLING) LOGIC INPUT VOLTAGE vs. OUTPUT VOLTAGE (10nF FALLING) LOGIC INPUT VOLTAGE vs. OUTPUT VOLTAGE (10nF RISING) MAX15024/25 toc10 MAX15024/25 toc11 MAX15024/25 toc12 MAX15025 MAX15025 MAX15025 IN_ 1V/div IN_ 1V/div IN_ 1V/div OUT_ 5V/div OUT_ 5V/div 20ns/div 20ns/div PROPAGATION DELAY MISMATCH vs. TEMPERATURE LINE REGULATION OF VREG (PROGRAMMED EXTERNALLY TO 5.04V) 2.5 5.2 10.5 1.5 VREG (V) 5.1 VREG (V) 2.0 LOAD REGULATION OF VREG 11.0 MAX15024/25 toc14 5.3 MAX15024/25 toc13 3.0 MAX15024/25 toc15 20ns/div 5.0 1.0 4.9 0.5 4.8 10.0 9.5 0 9.0 4.7 -40 0 40 120 80 5 10 TEMPERATURE (°C) 15 20 25 0 30 20 40 60 80 100 120 140 160 180 200 LOAD CURRENT (mA) SUPPLY VOLTAGE FB/SET CURRENT vs. TEMPERATURE FB/SET VOLTAGE vs. TEMPERATURE 1.236 1.234 MAX15024/25 toc17 1.238 20 FB/SET CURRENT (nA) MAX15024/25 toc16 1.240 FB/SET VOLTAGE (V) PROPAGATION DELAY BETWEEN CHANNELS (ns) OUT_ 5V/div 15 10 5 1.232 0 1.230 0 20 40 60 80 TEMPERATURE (°C) 8 100 120 0 20 40 60 80 TEMPERATURE (°C) _______________________________________________________________________________________ 100 120 Single/Dual, 16ns, High Sink/Source Current Gate Drivers PIN MAX15024 MAX15025A MAX15025B MAX15025E MAX15025F MAX15025C MAX15025D MAX15025G MAX15025H 1 1 2 2 NAME FUNCTION 1 FB/SET LDO Regulator Output Set. Feedback for VREG adjustment (VFB > 200mV). Connect FB/SET to GND for a fixed 10V output REG. Connect FB/SET to a resistor ladder to set VREG. 2 VCC Power-Supply Input. Bypass to GND with a low-ESR ceramic capacitor of 1µF. Input of the internal housekeeping regulator and of the main REG regulator. 3 3 3 GND Signal Ground 4 — — IN+ Driver Noninverting Logic Input. Connect to VCC when not used. — 4 4 IN1 Driver 1 Noninverting Logic Input 5 — — IN- Driver Inverting Logic Input. Connect to GND when not used. — 5 — IN2 Driver 2 Noninverting Logic Input — — 5 IN2 Driver 2 Inverting Logic Input 6 6 6 PGND Power Ground. Sink current return. Source of the internal pulldown n-channel transistor. 7 — — N_OUT Sink Output. Open-drain n-channel output. N_OUT sinks current for power MOSFET turn-off. — 7 7 OUT2 Driver 2 Output 8 — — P_OUT Source Output. Pullup p-channel output (open drain). Sources current for power MOSFET turn-on. — 8 8 OUT1 Driver 1 Output 9 9 9 DRV Output Driver Supply Voltage. Decouple DRV with a low ESR > 0.1µF ceramic capacitor to PGND placed in close proximity to the device. DRV can be powered independently from REG. Connect DRV, REG, and VCC together when there is no need for special DRV supply sequencing and the power-MOSFET gate voltage does not need to be regulated or limited. 10 10 10 REG Voltage Regulator Output. Connect to DRV for driving the power MOSFET with regulated VGS amplitude. Bypass with a low-ESR 1µF (minimum) ceramic capacitor to GND placed in close proximity to the device to ensure regulator stability. EP EP EP EP Exposed Pad. Internally connected to GND. Connect to GND plane or thermal pad and use multiple vias to a solid copper area on the bottom of the PCB. _______________________________________________________________________________________ 9 MAX15024/MAX15025 Pin Description MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Detailed Description The MAX15024 single gate driver’s internal source and sink transistor outputs are brought out of the IC to independent outputs allowing control of the external MOSFET’s rise and fall time. The MAX15024 single gate driver is capable of sinking an 8A peak current and sourcing a 4A peak current. The MAX15025 dual gate drivers are capable of sinking a 4A peak current and sourcing a 2A peak current. An integrated adjustable low-dropout linear voltage regulator (LDO) provides gate drive amplitude control and optimization. The single gate-driver propagation delay time is minimized and matched between the inverting and noninverting inputs. The dual gate-driver propagation delay is matched between channels. The MAX15024 has a dual input (IN+ and IN-), allows the use of an inverting or noninverting input, and is offered in TTL or CMOS-logic standards. The MAX15025 is offered with configurations of inverting and noninverting inputs with TTL or CMOS standards (see the Selector Guide). The MAX15024A/B and MAX15025A/B/C/D can be powered using VCC only, whereas the MAX15024C/D and MAX15025E/F/G/H can be used in two configurations: • VCC powered only • VCC, REG, and DRV are connected together LDO Voltage Regulator Feedback Control The MAX15024/MAX15025 include an internal LDO designed to deliver a stable reference voltage for use as a supply voltage for the internal MOSFET gate drivers. Connect the LDO feedback FB/SET to GND to set VREG to a stable 10V. Connect FB/SET to a resistordivider between VREG and GND to set VREG: VREG = VFB/SET x (1 + R2 / R1) (see Figure 2) VCC Undervoltage Lockout When VCC is below the UVLO threshold, the internal nchannel transistor is ON and the internal p-channel transistor is OFF, holding the output at GND independent of the state of the inputs so that the external MOSFETs remain OFF in the UVLO condition. The UVLO threshold is 3.5V (typ) with 200mV (typ) hysteresis to avoid chattering. When the device is operated at very low temperatures and below the UVLO threshold, the driver output could go high impedance. In this case, it is recommended adding a 10kΩ resistor to PGND to discharge the gate of the external MOSFET (see Figures 4 and 5). 10 Input Control The MAX15024 features inverting and noninverting input terminals. These inputs provide for flexibility of design and use. Connect IN+ to VCC when using IN- as an inverting input. Connect IN- to GND when using IN+ as a noninverting input. Shoot-Through Protection The MAX15024/MAX15025 provide protection that avoids any cross-conduction between the internal pchannel and n-channel devices. It also eliminates shootthrough, thus reducing the quiescent supply current. Exposed Pad (EP) The MAX15024/MAX15025 include an exposed pad allowing greater heat dissipation from the internal die to the outside environment. Solder the exposed pad carefully to GND or thermal pad to enhance the thermal performance. Applications Information Supply Bypassing, Device Grounding, and Placement Ample supply bypassing and device grounding are extremely important because when large external capacitive loads are driven, the peak current at the VDRV pin can approach 4A, while at the PGND pin, the peak current can approach 8A. V DRV drops and ground shifts are forms of negative feedback for inverters and, if excessive, can cause multiple switching when the inverting input is used and the input slew rate is low. The device driving the input should be referenced to the MAX15024/MAX15025 GND. Ground shifts due to insufficient device grounding can disturb other circuits sharing the same AC ground return path. Any series inductance in the VDRV, OUT_, and/or PGND paths can cause oscillations due to the very high di/dt that results when the MAX15024/MAX15025 are switched with any capacitive load. A 0.1µF or larger value ceramic capacitor is recommended for bypassing VDRV to GND and should be placed as close to the pins as possible. When driving very large loads (> 10nF) at minimum rise time, 10µF or more of parallel storage capacitance is recommended. A ground plane is highly recommended to minimize ground return resistance and series inductance. Care should be taken to place the MAX15024/MAX15025 as close as possible to the external MOSFET being driven to further minimize board inductance and AC path resistance. ______________________________________________________________________________________ Single/Dual, 16ns, High Sink/Source Current Gate Drivers Layout Information The MAX15024/MAX15025 MOSFET drivers source and sink large currents to create very fast rise and fall edges at the gate of the switching MOSFET. The high di/dt can cause unacceptable ringing if the trace lengths and impedances are not well controlled. The following printed-circuit board (PCB) layout guidelines are recommended when designing with the MAX15024/MAX15025: • Place one or more 1µF decoupling ceramic capacitor(s) from VDRV to PGND as close to the device as possible. At least one storage capacitor of 10µF (min) should be located on the PCB with a low resistance path to the VCC pin of the MAX15024/MAX15025. • There are two AC current loops formed between the device and the gate of the MOSFET being driven. The MOSFET looks like a large capacitance from gate to source when the gate is being pulled low. The active current loop is from MOSFET gate to OUT_ of the MAX15024/MAX15025 to PGND of the MAX15024/MAX15025, and to the source of the MOSFET. When the gate of the MOSFET is being pulled high, the active current loop is from the VDD terminal of the VDRV terminal of decoupling capacitor, to the VDRV of the MAX15024/MAX15025, to the OUT_ of the MAX15024/MAX15025, to the MOSFET gate, to the MOSFET source, and to the negative terminal of the decoupling capacitor. Both charging current loop and discharging current loop are important. It is important to minimize the physical distance and the impedance in these AC current paths. • Keep the device as close as possible to the MOSFET. • In the multilayer PCB, the inner layers should consist of a GND plane containing the discharging and charging current loops. IN+ VIH VIL P_OUT AND N_OUT CONNECTED TOGETHER OR OUT1/OUT2 90% 10% tD-OFF tF tD-ON tR Figure 1. Timing Diagram ______________________________________________________________________________________ 11 MAX15024/MAX15025 Power Dissipation Power dissipation of the MAX15024/MAX15025 consists of three components: the quiescent current, capacitive charge and discharge of internal nodes, and the output current (either capacitive or resistive load). The sum of these components must be kept below the maximum power-dissipation limit. The quiescent current is 700µA typ. The current required to charge and discharge the internal nodes is frequency dependent (see the Typical Operating Characteristics ). The MAX15024/MAX15025 power dissipation when driving a ground-referenced resistive load is: P = D x RON(MAX) x ILOAD2 where D is the fraction of the period the MAX15024/ MAX15025s’ output pulls high, RON(MAX) is the maximum on-resistance of the device with the output high (p-channel), and ILOAD is the output load current of the MAX15024/MAX15025. For capacitive loads, the power dissipation for each driver is: P = CLOAD x VDRV2 x FREQ where CLOAD is the capacitive load, VDRV is the driver supply voltage, and FREQ is the switching frequency. MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Typical Operating Circuits VCC (UP TO 18V) REG DRV VDRV < 18V DRV VCC R2 C1 MAX15024 REG FB/SET P_OUT MAX15024 R1 FB/SET P_OUT GND N_OUT IN- PGND N_OUT VCC (UP TO 28V) VCC PGND GND IN- IN+ IN+ Figure 2. Connect FB/SET to GND for VREG = 10V (Connect EP to GND) Figure 3. Operation Using a Different Supply Rail for DRV (Connect EP to GND) REG VCC (UP TO 28V) DRV DRV VCC R2 MAX15025 OUT1 REG FB/SET MAX15024C/D R1 FB/SET P_OUT OUT2 VCC (UP TO 28V) GND N_OUT VCC GND INPGND PGND IN1 IN+ IN2 Figure 4. Operation Using a VCC = DRV = REG (Connect EP to GND) 12 Figure 5. Connect FB/SET to GND for VREG = 10V (Connect EP to GND) ______________________________________________________________________________________ Single/Dual, 16ns, High Sink/Source Current Gate Drivers VR VCC LDO UVLO FB/SET VDRV IN_ LOGIC LEVEL SHIFT-UP PREDRIVER P IN+ P_OUT IN- N_OUT IN_ LOGIC LEVEL SHIFT-UP GND PREDRIVER N PGND MAX15024A MAX15024B VCC REG LDO UVLO FB/SET DRV IN_ LOGIC LEVEL SHIFT-UP P PREDRIVER IN1 OUT1 IN_ LOGIC LEVEL SHIFT-UP IN_ LOGIC LEVEL SHIFT-UP PREDRIVER PREDRIVER N P IN2 GND OUT2 IN_ LOGIC LEVEL SHIFT-UP PREDRIVER N PGND MAX15025 ______________________________________________________________________________________ 13 MAX15024/MAX15025 Block Diagrams Selector Guide LOGIC LEVELS TOP MARK VCCPOWERED ONLY VCC = VREG = VDRV Complementary TTL ATX ✔ — Complementary CMOS ATY ✔ — Complementary TTL — ✔ ✔ Complementary CMOS — ✔ ✔ 4A/2A Noninverting TTL ATZ ✔ — 2 4A/2A Noninverting CMOS AUA ✔ — MAX15025CATB+ 2 4A/2A Noninverting (1)/ Inverting (2) TTL AUB ✔ — MAX15025DATB+ 2 4A/2A Noninverting (1)/ Inverting (2) CMOS AUC ✔ — PART NO. OF CHANNELS PEAK CURRENTS (SINK/SOURCE) INPUTS MAX15024AATB+ 1 8A/4A MAX15024BATB+ 1 8A/4A MAX15024CATB+ 1 8A/4A MAX15024DATB+ 1 8A/4A MAX15025AATB+ 2 MAX15025BATB+ MAX15025EATB+ 2 4A/2A Noninverting TTL — ✔ ✔ MAX15025FATB+ 2 4A/2A Noninverting CMOS — ✔ ✔ MAX15025GATB+ 2 4A/2A Noninverting (1)/ Inverting (2) TTL — ✔ ✔ MAX15025HATB+ 2 4A/2A Noninverting (1)/ Inverting (2) CMOS — ✔ ✔ Note: All devices operate in a -40°C to +125°C temperature range and come in a 10-pin TDFN package. Pin Configurations (continued) REG DRV OUT1 OUT2 PGND REG DRV OUT1 OUT2 PGND TOP VIEW 10 9 8 7 6 10 9 8 7 6 MAX15025C/G MAX15025D/H MAX15025A/E MAX15025B/F 1 2 FB/SET VCC 3 4 5 IN2 5 IN1 4 IN2 VCC 3 IN1 2 GND 1 GND EP EP FB/SET MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers TDFN TDFN Chip Information PROCESS: BiCMOS 14 ______________________________________________________________________________________ Single/Dual, 16ns, High Sink/Source Current Gate Drivers 6, 8, &10L, DFN THIN.EPS ______________________________________________________________________________________ 15 MAX15024/MAX15025 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) MAX15024/MAX15025 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) COMMON DIMENSIONS PACKAGE VARIATIONS SYMBOL MIN. MAX. PKG. CODE N D2 E2 e JEDEC SPEC b [(N/2)-1] x e A 0.70 0.80 T633-2 6 1.50±0.10 2.30±0.10 0.95 BSC MO229 / WEEA 0.40±0.05 1.90 REF D 2.90 3.10 T833-2 8 1.50±0.10 2.30±0.10 0.65 BSC MO229 / WEEC 0.30±0.05 1.95 REF E 2.90 3.10 T833-3 8 1.50±0.10 2.30±0.10 0.65 BSC MO229 / WEEC 0.30±0.05 1.95 REF A1 0.00 0.05 T1033-1 10 1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05 2.00 REF L 0.20 0.40 T1033-2 10 1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05 2.00 REF k 0.25 MIN. T1433-1 14 1.70±0.10 2.30±0.10 0.40 BSC ---- 0.20±0.05 2.40 REF A2 0.20 REF. T1433-2 14 1.70±0.10 2.30±0.10 0.40 BSC ---- 0.20±0.05 2.40 REF Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 16 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2007 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.