STC6NF30V N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STC6NF30V 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A ■ Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly ■ TSSOP8 Double dice in common drain configuration Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. Internal schematic diagram Applications ■ Switching application Order code Part number Marking Package Packaging STC6NF30V C6NF30V TSSOP8 Tape & reel February 2007 Rev 4 1/13 www.st.com 13 Contents STC6NF30V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STC6NF30V 1 Electrical ratings Electrical ratings Table 1. Symbol VDS VDGR VGS Absolute maximum ratings Parameter Value Unit Drain-source voltage (VGS = 0) 30 V Drain-gate voltage (RGS = 20KΩ) 20 V ± 12 V Gate-source voltage ID Drain current (continuous) at TC = 25°C 6 A ID Drain current (continuous) at TC=100°C 3.8 A Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25°C 1.5 W Tstg Storage temperature –55 to 150 °C Max. Operating Junction Temperature –55 to 150 °C Value Unit RthJ-PBC Thermal resistance junction-PBC Max 100 (1) °C/W RthJ-PBC Thermal resistance junction-PBC Max (2) °C/W IDM (1) TJ 1. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter 83.5 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t = 10 sec. 2. When Mounted on minimum recommended footprint 3/13 Electrical characteristics 2 STC6NF30V Electrical characteristics (TJ = 25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±12V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 4.5V, ID= 3A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Typ. Max. 30 VDS = Max rating @125°C 1 10 µA µA ±100 nA 0.6 VGS =2.5V, ID = 3A Unit V VDS = Max rating, IDSS Table 4. Min. V 0.020 0.025 0.025 0.030 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. Forward transconductance VDS = 10V, ID = 6A 18 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f = 1 MHz, VGS = 0 800 180 32 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD =15V, ID = 6A VGS = 2.5V Figure 16 on page 9 6.8 2.0 3.4 9 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15V, ID = 3A, RG = 4.7Ω, VGS = 2.5V Figure 14 on page 9 Min. 20 25 32 13 ns ns ns ns STC6NF30V Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 6 A ISDM(1) Source-drain current (pulsed) 24 A VSD(2) Forward on voltage ISD = 6A, VGS = 0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6A, ISD trr Qrr IRRM Parameter Test conditions di/dt = 100A/µs, VDD = 15V, TJ = 150°C Min. Typ. 25 21 1.7 ns µC A Figure 16 on page 9 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STC6NF30V 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STC6NF30V Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage temperature 7/13 Electrical characteristics Figure 13. Thermal resistance and max power 8/13 STC6NF30V STC6NF30V 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load switching and diode recovery times 9/13 Package mechanical data 4 STC6NF30V Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STC6NF30V Package mechanical data 11/13 Revision history 5 STC6NF30V Revision history Table 7. 12/13 Revision history Date Revision Changes 21-Jun-2004 2 Complete document 03-Aug-2006 3 The document has been reformatted, SOA updated 01-Feb-2007 4 Typo mistake on first page STC6NF30V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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