RFMD RF3196PCBA-41X

RF3196
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
RoHS Compliant and Pb-Free Product
Package Style: Module, 6mm x6mm
Features
„
„
„
„
„
„
DCS/PCS
1
RFIN
Reduced Current into Mismatch
Ultra-Small 6mmx6mm
Package Size
Integrated VREG
„
„
„
„
„
DCS/PCS
RFOUT
8
GSM
RFOUT
BAND SELECT 2
TX ENABLE 3
VBATT 4
GND 5
Complete Power Control Solution
Automatic VBATT Tracking Circuit
No External Components or
Routing
VRAMP 6
GSM
7
RF IN
Functional Block Diagram
Applications
„
9
3V Quad-Band GSM Handsets
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/PC
S Products
GPRS Class 8
Power StarTM Module
Product Description
The RF3196 is a high-power, high-efficiency power amplifier module with integrated
power control that provides over 50dB of control range. The device is a self-contained 6mmx6mm module with 50Ω input and output terminals. The device is
designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS
handheld digital cellular equipment and other applications in the 824MHz to
849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz
bands. The RF3196 incorporates RFMD’s latest VBATT tracking circuit, which monitors battery voltage and prevents the power control loop from reaching saturation.
The RF3196 also has a power flattening circuit that reduces power variation and
max current draw into mismatch. The RF3196 requires no external routing or external components, simplifying layout and reducing board space.
Ordering Information
RF3196
RF3196 SB
RF3196PCBA-41X
9GaAs HBT
GaAs MESFET
InGaP HBT
Quad-Band GSM850/GSM900/DCS/PCS Power Amp Module
Power Amp Module 5-Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
9Si CMOS
GaN HEMT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 16
RF3196
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.3 to +6.0
VDC
Power Control Voltage (VRAMP)
-0.3 to +2.2
V
Input RF Power
+10
dBm
Max Duty Cycle
50
%
Output Load VSWR
10:1
Operating Case Temperature
-20 to +85
°C
Storage Temperature
-55 to +150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions
is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No license
is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD
reserves the right to change component circuitry, recommended application circuitry
and specifications at any time without prior notice.
Operating Conditions
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Overall Power Control
VRAMP
Power Control “ON”
Power Control “OFF”
V
V
Min. POUT
20
pF
DC to 2MHz
30
μA
VRAMP =2.1V
0.26
VRAMP Input Capacitance
2
VRAMP Input Current
TX Enable “ON”
2.1
1.5
V
TX Enable “OFF”
0.5
V
GSM Band Enable
0.5
V
DCS/PCS Band Enable
Max. POUT
1.5
V
Overall Power Supply
Power Supply Voltage
3.0
Power Supply Current
3.5
4.5
1
150
V
Operating limits
μA
PIN <-30dBm, TX Enable=Low,
Temp=-20°C to +85°C
mA
VRAMP =0.26V, TX Enable=High
Overall Control Signals
Band Select “Low”
0
0
0.5
V
Band Select “High”
1.5
2.0
3.0
V
20
50
μA
TX Enable “Low”
0
0
0.5
V
TX Enable “High”
1.5
2.0
3.0
V
1
2
μA
Band Select “High” Current
TX Enable “High” Current
2 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions: Temp=+25 °C,
VBATT =3.5V,
VRAMP =VRAMP_RP, PIN =3dBm,
Freq=824MHz to 849MHz,
12.5% Duty Cycle, Pulse Width=1154μs
Overall (GSM850 Mode)
Operating Frequency Range
824 to 849
MHz
Maximum Output Power 1
34.2
dBm
Temp=+25°C, VBATT =3.5V, VRAMP =VRAMP_RP
Maximum Output Power 2
32.0
dBm
Temp=+85°C, VBATT =3.0V, VRAMP <2.1V
Total Efficiency
Input Power Range
45
51
0
+3
%
+5
At POUT MAX, VBATT =3.5V, VRAMP =2.1V
dBm
Maximum output power guaranteed at minimum drive level
dBm
RBW=100kHz, 869MHz to 894MHz,
POUT < +34.2dBm
Output Noise Power
-85
Forward Isolation 1
-45
-30
dBm
TXEnable=Low, PIN =+5dBm
Forward Isolation 2
-30
-10
dBm
TXEnable=High, PIN =+5dBm,
VRAMP =0.26V
Cross Band Isolation at 2f0
-30
-20
dBm
VRAMP =0.26V to VRAMP_RP
Second Harmonic
-15
-10
dBm
VRAMP =0.26V to VRAMP_RP
Third Harmonic
-30
-15
dBm
VRAMP =0.26V to VRAMP_RP
-36
dBm
VRAMP =0.26V to VRAMP_RP
All Other
Non-Harmonic Spurious
Input Impedance
Ω
50
Input VSWR
2.5:1
Output Load VSWR Stability (Spurious Emissions)
-36
Output Load VSWR Ruggedness
dBm
No damage or permanent
degradation to device
Output Load Impedance
VSWR=8:1; all phase angles
(VRAMP set for POUT <34.2dBm into 50Ω load;
load switched to VSWR=8:1; RBW=3MHz)
VSWR=10:1; all phase angles
(VRAMP set for POUT <34.2dBm into 50Ω load;
load switched to VSWR=10:1)
50
Ω
Load impedance presented at RF OUT pad
dB
VRAMP =0.26V to VRAMP_RP
Power Control VRAMP
Power Control Range
Transient Spectrum
50
55
-35
-23
dBm
VRAMP =VRAMP_RP
Notes:
VRAMP_RP =VRAMP set for 34.2dBm at nominal conditions.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 16
RF3196
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions: Temp=+25 °C,
VBATT =3.5V,
VRAMP =VRAMP_RP, PIN =3dBm,
Freq=880MHz to 915MHz,
12.5% Duty Cycle, Pulse Width=1154μs
Overall (GSM900 Mode)
Operating Frequency Range
880 to 915
MHz
Maximum Output Power 1
34.2
dBm
Temp=+25°C, VBATT =3.5V, VRAMP =VRAMP_RP
Maximum Output Power 2
32.0
dBm
Temp=+85°C, VBATT =3.0V, VRAMP <2.1V
Total Efficiency
Input Power Range
50
56
0
+3
Output Noise Power
%
+5
At POUT MAX, VBATT =3.5V, VRAMP =2.1V
dBm
Maximum output power guaranteed at minimum drive level
-83
dBm
RBW=100kHz, 925MHz to 935MHz,
POUT < +34.2dBm
-85
dBm
RBW=100kHz, 935MHz to 960MHz,
POUT < +34.2dBm
Forward Isolation 1
-40
-30
dBm
TXEnable=Low, PIN =+5dBm
Forward Isolation 2
-30
-10
dBm
TXEnable=High, PIN =+5dBm,
VRAMP =0.26V
Cross Band Isolation 2f0
-30
-20
dBm
VRAMP =0.26V to VRAMP_RP
Second Harmonic
-15
-10
dBm
VRAMP =0.26V to VRAMP_RP
Third Harmonic
-30
-15
dBm
VRAMP =0.26V to VRAMP_RP
-36
dBm
VRAMP =0.26V to VRAMP_RP
All Other
Non-Harmonic Spurious
Input Impedance
Ω
50
Input VSWR
2.5:1
Output Load VSWR Stability (Spurious Emissions)
-36
Output Load VSWR Ruggedness
dBm
No damage or permanent
degradation to device
Output Load Impedance
VSWR=8:1; all phase angles
(VRAMP set for POUT <34.2dBm into 50Ω load;
load switched to VSWR=8:1; RBW=3MHz)
VSWR=10:1; all phase angles
(VRAMP set for POUT <34.2dBm into 50Ω load;
load switched to VSWR=10:1)
50
Ω
Load impedance presented at RF OUT pad
dB
VRAMP =0.26V to VRAMP_RP
Power Control VRAMP
Power Control Range
Transient Spectrum
50
55
-35
-23
dBm
VRAMP =VRAMP_RP
Notes:
VRAMP_RP =VRAMP set for 34.2dBm at nominal conditions.
4 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions: Temp=25°C, VBATT =3.5V,
VRAMP =VRAMP_RP, PIN =3dBm,
Freq=1710MHz to 1785MHz,
12.5% Duty Cycle, pulse width=1154μs
Overall (DCS Mode)
Operating Frequency Range
1710 to 1785
Maximum Output Power 1
32.0
Maximum Output Power 2
30.0
Total Efficiency
Input Power Range
MHz
dBm
dBm
45
51
0
+3
%
+5
Temp=+25°C, VBATT =3.5V, VRAMP =VRAMP_RP
Temp=+85°C, VBATT =3.0V, VRAMP < 2.1V
At POUT MAX, VBATT =3.5V, VRAMP =2.1V
dBm
Maximum output power guaranteed at minimum drive level
dBm
RBW=100kHz, 1805MHz to 1880MHz, POUT
< 32dBm
Output Noise Power
-85
Forward Isolation 1
-40
-30
dBm
TXEnable=Low, PIN =+5dBm
Forward Isolation 2
-25
-10
dBm
TXEnable=High, VRAMP =0.26V,
PIN =+5dBm
Second Harmonic
-15
-10
dBm
VRAMP =0.26V to VRAMP_RP
Third Harmonic
-30
-15
dBm
VRAMP =0.26V to VRAMP_RP
-36
dBm
VRAMP =0.26V to VRAMP_RP
All Other
Non-Harmonic Spurious
Input Impedance
Ω
50
Input VSWR
2.5:1
Output Load VSWR Stability (Spurious Emissions)
-36
Output Load VSWR Ruggedness
dBm
No damage or permanent
degradation to device
Output Load Impedance
VSWR=8:1; all phase angles
(VRAMP set for POUT <32dBm into 50Ω load;
load switched to VSWR=8:1; RBW=3MHz)
VSWR=10:1; all phase angles
(VRAMP set for POUT <32dBm into 50Ω load;
load switched to VSWR=10:1)
50
Ω
Load impedance presented at RF OUT pad
dB
VRAMP =0.26V to VRAMP_RP
Power Control VRAMP
Power Control Range
Transient Spectrum
45
50
-35
-23
dBm
VRAMP =VRAMP_RP
Notes:
VRAMP_RP =VRAMP set for 32dBm at nominal conditions.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 16
RF3196
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions: Temp=25°C, VBATT =3.5V,
VRAMP =VRAMP_RP, PIN =3dBm,
Freq=1850MHz to 1910MHz,
12.5% Duty Cycle, pulse width=1154μs
Overall (PCS Mode)
Operating Frequency Range
1850 to 1910
Maximum Output Power 1
32.0
Maximum Output Power 2
30.0
Total Efficiency
Input Power Range
MHz
dBm
dBm
45
51
0
+3
%
+5
Temp=+25°C, VBATT =3.5V, VRAMP =VRAMP_RP
Temp=+85°C, VBATT =3.0V, VRAMP < 2.1V
At POUT MAX, VBATT =3.5V, VRAMP =2.1V
dBm
Maximum output power guaranteed at minimum drive level
dBm
RBW=100kHz, 1930MHz to 1990MHz, POUT
< 32dBm
Output Noise Power
-85
Forward Isolation 1
-35
-30
dBm
TXEnable=Low, PIN =+5dBm
Forward Isolation 2
-25
-10
dBm
TXEnable=High, VRAMP =0.26V,
PIN =+5dBm
Second Harmonic
-15
-10
dBm
VRAMP =0.26V to VRAMP_RP
Third Harmonic
-30
-15
dBm
VRAMP =0.26V to VRAMP_RP
-36
dBm
VRAMP =0.26V to VRAMP_RP
All Other
Non-Harmonic Spurious
Input Impedance
Ω
50
Input VSWR
2.5:1
Output Load VSWR Stability (Spurious Emissions)
-36
Output Load VSWR Ruggedness
dBm
No damage or permanent
degradation to device
Output Load Impedance
VSWR=8:1; all phase angles
(VRAMP set for POUT <32dBm into 50Ω load;
load switched to VSWR=8:1; RBW=3MHz)
VSWR=10:1; all phase angles
(VRAMP set for POUT <32dBm into 50Ω load;
load switched to VSWR=10:1)
50
Ω
Load impedance presented at RF OUT pad
dB
VRAMP =0.26V to VRAMP_RP
Power Control VRAMP
Power Control Range
Transient Spectrum
45
50
-35
-23
dBm
VRAMP =VRAMP_RP
Notes:
VRAMP_RP =VRAMP set for 32dBm at nominal conditions.
6 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
Pin
1
2
Function
Description
DCS/PCS IN RF input to the DCS band. This is a 50Ω input.
BAND SELECT
Interface Schematic
Allows external control to select the GSM or DCS band with a logic high or
low. A logic low enables the GSM band whereas a logic high enables the
DCS band.
BAND SEL
GSMCTRL
TX EN
DCS CTRL
3
TX ENABLE
This signal enables the PA module for operation with a logic high.
VBATT
TX EN
4
5
6
VBATT
GND
VRAMP
TX ON
Power supply for the module. This should be connected to the battery.
Ramping signal from DAC. A 300kHz lowpass filter is integrated into the
CMOS. No external filtering is required.
300 kH z
VRAMP
7
8
GSM IN
GSM OUT
9
DCS/PCS
OUT
GND
Pkg
Base
RF input to the GSM band. This is a 50Ω input.
RF output for the GSM band. This is a 50Ω output. The output load line
matching is contained internal to the package.
RF output for the DCS band. This is a 50Ω output. The output load line
matching is contained internal to the package.
Package Drawing
1.20
±0.04
1
6.00
± 0.10
6.00 ± 0.10
Shaded areas represent pin 1.
Rev A2 DS071207
2.600 TYP
4.650
5.435 TYP
5.500 TYP
5.900 TYP
0.000 TYP
0.565 TYP
1.150 TYP
2.000 TYP
2.850
5.057
5.100
5.823
5.500
5.400 TYP
5.225 TYP
5.200 TYP
4.625 TYP
4.450 TYP
3.850 TYP
3.675 TYP
3.075 TYP
2.900 TYP
2.300 TYP
2.125 TYP
1.525 TYP
1.350 TYP
0.800 TYP
0.600 TYP
0.500 TYP
0.000
0.100 TYP
0.565 TYP
0.965
1.150 TYP
1.225 TYP
1.750 TYP
Dimensions in mm.
1
5.900 TYP
5.435
5.370
5.035
4.600
4.300
4.200
3.800
3.400
3.065
3.000
2.600
2.100
1.700
1.365
1.300
0.900 TYP
0.750 TYP
0.565 TYP
0.100 TYP
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 16
RF3196
Pin Out
Top Down View
DCS/PCS
1
RFIN
9
DCS/PCS
RFOUT
8
GSM
RFOUT
BAND SELECT 2
TX ENABLE 3
VBATT 4
GND 5
VRAMP 6
GSM
7
RF IN
8 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
Application Schematic
50 Ω μstrip
DCS/PCS IN
50 Ω μstrip
1
BAND SELECT
9
DCS/PCS OUT
2
TX ENABLE
3
VBATT
4
5
VRAMP
6
50 Ω μstrip
GSM IN
7
50 Ω μstrip
8
GSM OUT
Evaluation Board Schematic
P1
1
GND P2-1
CON1
P2
1
VCC
CON1
50 Ω μstrip
DCS/PCS IN
50 Ω μstrip
1
BAND SELECT
9
DCS/PCS OUT
2
TX ENABLE
3
VBATT
*Not required in most applications.
22 μF*
VRAMP
4
5
6
50 Ω μstrip
7
50 Ω μstrip
8
GSM OUT
GSM IN
Notes:
1. All the PA output measurements are referenced to the PA output pad (pins 8 and 9).
2. The 50 Ω μstrip between the PA output pad and the SMA connector has an approximate insertion loss
of 0.1 dB for GSM900/EGSM900 and 0.2 dB for DCS1800/PCS1900 bands.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 16
RF3196
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer
10 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
Theory of Operation
Overview
Building on previous generations of PowerStar® modules, the RF3196 has integrated Power Control with additional features
such as VBATT tracking, and a power flattening circuit that reduces power and current variation into mismatch conditions.
Theory of Operation
The type of power control used in the RF3196 is a closed loop method that regulates the collector voltage of the amplifier while
the stages are held at a constant bias. As the required output power is decreased from full power down to minimum PCLs, the
collector voltage is also decreased. This process is repeatable and enables the user to implement a single point calibration,
thereby increasing production by saving valuable time in the factory. The basic circuit is shown below in Figure 1.
VBATT
+
VRAMP
+
3 dB BW
300 kHz
Saturation
Detector
H(s)
VCC
RF IN
RF OUT
TX ENABLE
Figure 1. Power Control Circuit
Output power does not vary due to supply voltage under normal operating conditions if VCC is sufficiently lower than VBATT. Regulating the collector voltage to the PA essentially eliminates voltage sensitivity. This covers most cases where the PA will be
operated. However, as the battery discharges and approaches its lower voltage range, the maximum output power from the PA
will also drop slightly. In this case it is important to decrease VRAMP to prevent the power control circuitry from inducing switching transients. These transients occur as a result of the control loop slowing down and not regulating power in accordance with
VRAMP..
In the RF3196, is a VBATT tracking circuit that reduces the level of VRAMP as the battery voltage decreases. The limiter is integrated into the CMOS controller and requires no additional input from the user. In the circuit, a feedback loop is implemented
that compares VBATT to VCC and produces a correction so that VRAMP is decreased. This prevents the switch transistor from
being driven into saturation and inducing switching transients.
In addition to the VBATT tracking circuit, the RF3196 has an integrated power flattening circuit that reduces the amount of current variation when a mismatch is presented to the output of the PA. When a mismatch is presented to the output of the PA, its
output impedance is varied and could present a load that will increase output power. As the output power increases, so does
current consumption. The current consumption can become very high if not monitored and limited. The power flattening circuit,
like the VBATT tracking circuit, is also integrated onto the CMOS controller and requires no input from the user.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 16
RF3196
Into a mismatch, the current varies as the phase changes. The power flattening circuit monitors current through an internal
sense resistor. As the current changes, the loop is adjusted in order to maintain current. The result is flatter power and reduced
current into mismatch. When compared to the RF3166, the RF3196 shows less current variation and has less power variation.
Below, in Figure 2, is the power variation comparison.
Power Variation VSWR=3:1
VRAMP=VRAMPRP=34.2dBm into 50
Freq=880, Temp=Room, PIN=5dBm, VBATT=4.5V
35.8
35.6
RF3196
35.4
RF3166
35.2
35.0
34.8
POUT (dBm)
34.6
34.4
34.2
34.0
33.8
33.6
33.4
33.2
33.0
32.8
32.6
32.4
32.2
0
20 40 60 80 10 12 14 16 18 20 22 24 26 28 30 32 34 36
0 0 0 0 0 0 0 0 0 0 0 0 0 0
Phase Angle (°)
Figure 2. Power Variation into Mismatch
As previously discussed, reducing the power variation results in reduced current variation. Below, in Figure 3, is the current
variation comparison.
Current Variation VSWR=3:1
VRAMP=VRAMPRP=34.2dBm into 50
Freq=880, Temp=Room, PIN=5dBm, VBATT=4.5V
3.0
2.8
RF3196
2.6
RF3166
2.4
2.2
2.0
ICC (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 10 12 14 16 18 20 22 24 26 28 30 32 34 36
0 0 0 0 0 0 0 0 0 0 0 0 0 0
Phase Angle (°)
Figure 3. Current Variation into Mismatch
12 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
The power control functionality provides 50dB continuous control range and 70dB total control range, using a DAC compatible
analog voltage input referred to as VRAMP. The timing of the control signals is important for maintaining transient performance
and superior isolation between the bursts. To ensure that the part ramps up properly, a timing diagram is provided below in Figure 4. It is important that ramping begins at least 2us after TXEN goes high. An offset voltage of 0.26V provides the greatest
dynamic range for the best transient performance.
2.9 V to 4.2 V
VBATT
2.5V
BandSel
0 to 5 dBm
RF Drive
> 1.8V
TX_Enable
Vramp ends 2us
before Tx_Enable
Vramp starts 2us
after Tx_Enable
0.26 to 2.1 V
VRAMP
Power On Sequence:
The Power Down sequence is in opposite order of the Power On Sequence
Apply VBATT
Apply Band Select
Apply RF drive
Apply TX_Enable & VRAMP in unison
Figure 4. RF3196 Timing Diagram
As described in the above figure, VBATT is applied first to provide bias to the silicon control chip. Then the RF drive is applied.
Finally, when TX_ENABLE is high, the VRAMP signal is held at constant 0.26V, and 2uS later, VRAMP begins to ramp up.
The shape of VRAMP is important for maintaining the switching transients. The basic shape of the ramping function should be
the first 90° of a raised sine function. This is shown in Equation 1 where A is the desired peak power in mW, B is the minimum
output power of the power amplifier in mW, K determines the duration of the ramp, and t is time. The down-ramp function uses
the same equation except a cosine function is used in the place of the sine function. The exponent “n” determines the steepness of the ramp and is typically set to 5.
n
P OUT ( mW ) = ( A – B ) ⋅ ( sin ( Kt ) ) + B
(Eq. 1)
The value of K is calculated using Equation 2.
π
K = -------------------2 ⋅ t ramp
(Eq. 2)
The Ramp synthesis tool provided by RFMD generates the ramp profiles automatically. It will generate ramps for all power levels and output the waveform for 8, 10, and 12 bit DACs in decimal, voltage, or hex formats.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
13 of 16
RF3196
The spectrum is maintained at all power levels. The following figures show power ramping at max and backed off power.
Figure 5. Full Power Ramping
Figure 6. Low Power Ramping
Summary
The RF3196 is the next generation of PowerStar® Power Amplifiers. The type of power control used in the RF3196 is a closed
loop method that regulates the collector voltage of the amplifier while the stages are held at a constant bias. The VBATT tracking circuit monitors VBATT levels so that the transient spectrum never degrades and the new power flattening circuit reduces
power and current variation in high current situations.
14 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207
RF3196
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch
to 8μinch gold over 180μinch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested
for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 0.55 x 0.95
B = 0.55 Sq. Typ.
C = 0.95 x 0.55 Typ.
D = 1.80 x 4.62
E = 0.60 Sq. Typ.
Pin 1
5.20
B
C
Dimensions in mm.
5.60
5.40
4.90
5.20
TYP
Pin 1
4.10
A
4.10
B
3.30
A
3.30
B
0.20
Metal Land Pattern
B
4.62
E
E
B
3.85
E
E
B
E
E
B
3.07
2.76
2.30
1.60
B
E
E
B
1.52
0.80
B
E
E
B
0.75
0.00
B
E
E
B
5.40
A
5.40
E
4.25
A
D
C
E
3.40
0.60
0.00
0.50
0.00
A
C
0.00
1.80
1.40
0.80
2.50
B
4.90
5.40
2.50
E
A
1.95
5.20
5.60
4.47
0.37
0.93
A = 0.40 Sq. Typ.
B = 0.80 x 0.40 Typ.
C = 0.40 x 0.80
Solder Mask Pattern
Figure 1. PCB Metal Land and Solder Mask Patterns (Top View)
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
Thermal Pad and Via Design
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been
designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing
strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a
0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the
quantity of vias be increased by a 4:1 ratio to achieve similar results.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
15 of 16
RF3196
Material Declaration
RoHS* Banned Material Content
RoHS Compliant:
Yes
Package total weight in grams (g): 0.117
Compliance Date Code:
N/A
Bill of Materials Revision:
3196E4.9 Rev.B
Pb Free Category:
e4
Bill of Materials
Permissible Concentration
Limits per EU Decision
2005/618/EC
Substrate
Parts Per Million (PPM)
Pb
Cd
Hg
Cr VI
PBB
PBDE
1000
0
0
0
0
0
0
0
0
0
0
0
335
0
0
0
0
0
Die
0
0
0
0
0
0
Molding Compound
0
0
0
0
0
0
Die Attach Epoxy
0
0
0
0
0
0
Wire
0
0
0
0
0
0
Solder Plating
0
0
0
0
0
0
Passive Components
This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD by its
suppliers, and applies to the Bill of Materials (BOM) revision noted above.
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Pb noted in this material declaration is used in glass or ceramics in electronic components which is an allowed exemption from the RoHS
regulations, see Annex to Directive 2002/95/EC and amendment 2005/747/EC.
16 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS071207