Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21 BAS35 – L22 2 BAS29 1 3 2 BAS31 1 3 2 BAS35 1 3 ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak forward current Forward current Junction temperature Forward voltage at IF = 50 mA Reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA VR IFRM IF Tj VF max. max. max. max. < trr < RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values Continuous reverse voltage VR Repetitive peak forward current IFRM Repetitive peak reverse current IRRM max. max. max. 90 600 250 150 0.84 V mA mA °C V 75 ns 90 V 600 mA 600 mA BAS29, BAS31, BAS35 Average rectified forward current (averaged over any 20 ms period) Non-repetitive peak forward current t = 1 µs; Tj = 25 °C prior to surge; per crystal t = 1 s; Tj = 25 °C prior to surge; per crystal Forward current (D) Repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS (per diode) Tamb = 25 °C unless otherwise specified Forward voltage IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA Reverse currents VR = 90 V VR = 90 V; Tamb = 150 °C Reverse avalanche breakdown voltage IR = 1 mA Diode capacitance VR = 0; f = 1 MHz Reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA IF(AV) max. 250 mA IFSM IF max. max. max. 3 A 0.75 A 250 mA ERRM Tstg Tj max. 5.0 mJ –55 to +150 °C max. 150 °C Rth j–a = 430 K/W VF VF VF VF VF < < < < < 0.75 0.84 0.90 1.00 1.25 IR IR < < 100 nA 100 µA V(BR)R V V V V V 120 to 175 V Cd < 35 pF trr < 75 ns * When mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.