ETC NTE593

NTE593
Silicon Diode, High Speed Switch
Description:
The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for high–speed switching in hybrid thick–film circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V
Non–Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current (TA ≤ +25°C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
Test Conditions
Min
Typ
Max
Unit
IF = 1mA
–
–
715
mV
IF = 10mA
–
–
855
mV
IF = 50mA
–
–
1000
mV
IF = 150mA
–
–
1250
mV
VR = 75V
–
–
1
µA
VR = 75V, TJ = +150°C
–
–
50
µA
Diode Capacitance
Cd
VR = 0, f = 1MHz
–
–
2
pF
Reverse Recovery Time
(When switched from
IF = 30mA to IR = 30mA
trr
measured at IR = 1mA,
RL = 100Ω
–
–
6
ns
Recovery Charge
(When switched from
IF = 10mA to VR = 5V
Qs
RL = 100Ω
–
–
45
pC
.016 (0.48)
K
A
.098
(2.5)
Max
N.C.
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)