NTE NTE596

NTE596
Silicon Diode, Dual, Common Anode,
High Speed
Description:
The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 x 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 2), RthSA . . . . . . . . . . . . . . . . . 2 x 90K/W
Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
Test Conditions
Min
Typ
Max
Unit
IF = 1mA
–
–
715
mV
IF = 10mA
–
–
855
mV
IF = 50mA
–
–
1000
mV
IF = 150mA
–
–
1250
mV
VR = 70V
–
–
2.5
µA
VR = 70V, TJ = +150°C
–
–
50
µA
Diode Capacitance
Cd
VR = 0, f = 1MHz
–
–
2
pF
Forward Recovery Voltage
(When switched to IF = 10mA)
Vfr
tr = 20ns
–
–
1.75
V
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Recovery Time
(When switched from
IF = 10mA to IR = 10mA
trr
measured at IR = 1mA,
RL = 100Ω
–
–
6
ns
Recovery Charge
(When switched from
IF = 10mA to VR = 5V
Qs
RL = 100Ω
–
–
45
pC
.016 (0.48)
A
K
.098
(2.5)
Max
K
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)