Diodes SMD Type High-Speed Double Diode KAV70(BAV70) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High switching speed: max.4 ns 1 0.55 Small plastic SMD package +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Repetitive peak forward current: max. 450 mA 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRRM 85 V VR 75 V Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current (single diode loaded *) 215 IF (double diode loaded *) Repetitive peak forward current 450 IFRM Non-repetitive peak forward current (Tj = 25 mA 125 mA 4 ) t=1us IFSM t = 1ms 1 t = 1s A 0.5 PD 250 mW thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient * Rth j-a 500 K/W Storage temperature Tst g -65 to +150 Junction temperature Tj 150 power dissipation (Tamb = 25 ) * * Device mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Reverse current IR Diode capacitance Cd Reverse recovery time trr forward recovery voltage Vf r Max Unit IF = 1 mA Conditions 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA VR = 25 V 1.25 30 nA VR = 75 V 2.5 A VR = 25 V; Tj = 150 60 A VR = 75 V; Tj = 150 100 A f = 1 MHz; VR = 0 V; 1.5 pF 4 ns 1.75 V when switched from IF =10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; when switched from IF =10 mA; tr = 20 ns; Marking Marking A4 www.kexin.com.cn 1 Diodes SMD Type KAV70(BAV70) Typical Characteristics Device mounted on an FR4 printed-circuit board. Fig.1Maximum permissible continuous forward current as a function of ambient (1) Tj = 150 ; typical values. (2) Tj = 25 ; typical values. (3) Tj = 25 ; maximum values. Fig.2 Forward current as a function of forward voltage. temperature. Based on square wave currents. Tj = 25 prior to surge. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2 www.kexin.com.cn Diodes SMD Type KAV70(BAV70) f = 1 MHz; Tj = 25 Fig.4 Reverse current as a function of junction temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. www.kexin.com.cn 1