MAXIM MAX13000EEUE

19-3692; Rev 1; 5/11
Ultra-Low-Voltage Level Translators
The MAX13000E–MAX13005E 6-channel level translators provide the level shifting necessary to allow data
transfer in multivoltage systems. Externally applied voltages, VCC and VL, set the logic levels on either side of
the device. Logic signals present on the VL side of the
device appear as higher voltage logic signals on the
VCC side of the device, and vice-versa.
The MAX13000E–MAX13005E feature a low VCC and VL
quiescent supply current less than 4µA. The
MAX13000E–MAX13005E also have ±15kV ESD protection on the I/O VCC side for greater protection in applications that route signals externally. The ESD protection is
specified using the Human Body Model (HBM). The
MAX13000E/MAX13001E/MAX13002E operate at a guaranteed 230kbps data rate. The MAX13003E/
MAX13004E/MAX13005E operate at a guaranteed
20Mbps data rate when VCC > +1.65V.
The MAX13000E/MAX13003E are bidirectional level
translators, allowing data translation in either direction
(VL ↔ VCC) on any single data line without a DIRECTION
input. The MAX13001E/MAX13002E/MAX13004E/
MAX13005E unidirectional level translators level shift
data in one direction (VL → VCC or VCC → VL) on any
single data line. The MAX13001E/MAX13002E/
MAX13004E/MAX13005E unidirectional translators’
inputs have the capability to interface with both CMOS
and open-drain (OD) outputs. For more information see
the Ordering Information, Selector Guide, and the InputDriver Requirements sections.
The MAX13000E–MAX13005E operate with +0.9V to
+3.6V VL voltages and +1.5V to +3.6V VCC voltages. The
MAX13000E–MAX13005E are available in 16-bump
UCSP™ and 16-pin TSSOP packages, and are specified
over the extended -40°C to +85°C operating temperature range.
Features
♦ Guaranteed Data-Rate Options
230kbps (MAX13000E/MAX13001E/MAX13002E)
20Mbps (MAX13003E/MAX13004E/MAX13005E)
♦ Bidirectional Level Translation Without a
DIRECTION Input
♦
♦
♦
♦
Operational Down to +0.9V on VL and +1.5V on VCC
±15kV ESD Protection on I/O VCC Lines per HBM
Low <4µA Quiescent Current
Enable/Shutdown Control
♦ 2mm x 2mm, 16-Bump UCSP and Lead Packaging
Options
♦ CMOS or Open-Drain Outputs Interface Capability
UCSP is a trademark of Maxim Integrated Products, Inc.
SPI is a trademark of Motorola, Inc.
MICROWIRE is a registered trademark of National
Semiconductor Corp.
Ordering Information
PART
MAX13000EEUE+
SPI™ and MICROWIRE® Level Translation
Smart-Card Readers
Portable POS Systems
Portable Communication Devices
Low-Cost Serial Interfaces
Telecommunications Equipment
PINPACKAGE
-40°C to +85°C
16 TSSOP
+Denotes a lead(Pb)-free/RoHS-compliant package.
Ordering Information continued at end of data sheet.
Pin Configurations
BOTTOM VIEW
MAX13000E/MAX13003E
I/OVCC3
VCC
GND
I/OVCC4
I/OVCC1
I/OVCC2
I/OVCC5
I/OVCC6
I/OVL1
I/OVL2
I/OVL5
I/OVL6
I/OVL3
VL
EN
I/OVL4
1
2
3
4
D
Applications
CMOS Logic-Level Translation
Open-Drain I/O Translation
OD-to-CMOS Signal Conversion
Low-Voltage ASIC Level Translation
Cell Phones
TEMP RANGE
C
B
A
4 X 4 UCSP
Pin Configurations continued at end of data sheet.
Typical Operating Circuits and Selector Guide appear at end
of data sheet.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
MAX13000E–MAX13005E
General Description
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
ABSOLUTE MAXIMUM RATINGS
Voltages referenced to GND.
VCC ...........................................................................-0.3V to +4V
VL ..............................................................................-0.3V to +4V
I/OVCC_ .......................................................-0.3V to (VCC + 0.3V)
I/OVL_ ............................................................-0.3V to (VL + 0.3V)
EN .................................................................-0.3V to (VL + 0.3V)
Short-Circuit Duration I/OVL_, I/OVCC_ to GND ..........Continuous
Continuous Power Dissipation (TA = +70°C)
16-Pin TSSOP (derate 9.4mW/°C at +70°C) ................755mW
16-Bump UCSP (derate 8.2mW/°C at +70°C) .............659mW
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4)
PARAMETER
VL Supply Range
VCC Supply Range
Supply Current from VCC
(Note 3)
SYMBOL
VL
VCC
IQVCC
MAX
UNITS
VL ≤ VCC (Note 2)
CONDITIONS
0.9
VCC
V
(Note 2)
1.5
3.6
V
4
TA = +85°C
40
IQVL
TA = +85°C
VCC Shutdown Supply Current
(Note 3)
ISHDN-VCC
TYP
TA = +25°C
TA = +25°C
Supply Current from VL (Note 3)
MIN
(Note 3)
1
VL < VCC - 0.2V
(Note 3)
5
2
4
VL < VCC - 0.2V
40
2
EN = GND, TA = +85°C
20
VL < VCC - 0.2V,
EN = GND
EN = GND
VL Shutdown Supply Current
(Note 3)
TA = +85°C
1
4
VL < VCC - 0.2V,
EN = GND
20
EN = GND
40
I/O VL_, I/O VCC_,
EN = GND
TA = +25°C
0.35
TA = +85°C
1
I/O Tri-Stated Output Leakage
Current
VL < VCC - 0.2V, I/O
VL_, I/O VCC_,
EN = GND
TA = +25°C
0.2
TA = +85°C
0.5
2
µA
2
I/O Tri-State Output Leakage
Current
EN Input Leakage Current
µA
20
EN = GND, TA = +25°C
TA = +25°C
µA
µA
µA
µA
TA = +25°C
0.35
TA = +85°C
1
_______________________________________________________________________________________
µA
Ultra-Low-Voltage Level Translators
(VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2/3 × VL
V
LOGIC-LEVEL THRESHOLDS
I/OVL_ Input-Voltage-High
Threshold
VIHL
I/OVL_ Input-Voltage-Low
Threshold
VILL
I/OVCC_ Input-Voltage-High
Threshold
VIHC
I/OVCC_ Input-Voltage-Low
Threshold
VILC
EN Input-Voltage-High Threshold
VIHEN
EN Input-Voltage-Low Threshold
VILEN
I/OVL_ Output-Voltage High
VOHL
I/OVL_ Output-Voltage Low
I/OVCC_ Output-Voltage High
I/OVCC_ Output-Voltage Low
VOLL
VOHC
VOLC
1/3 × VL
V
2/3 ×
VCC
1/3 ×
VCC
V
2/3 × VL
I/OVL_ source current = 20µA
V
1/3 × VL
V
VL 0.25
V
MAX13002E/MAX13005E,
OVL_ sink current = 1µA
0.3
MAX13000E/MAX13001E/MAX13003E/
MAX13004E, I/OVL_ sink current = 20µA
0.25
I/OVCC_ source current = 20µA
V
V
VCC 0.25
V
MAX13001E/MAX13004E,
OVCC_ sink current = 1µA
0.3
MAX13000E/MAX13002E/MAX13003E/
MAX13005E, I/OVCC_ sink current = 20µA
0.25
V
OUTPUT CURRENTS
Output Sink Current During
Transient (VCC Side)
Output Sink Current During
Transient (VL Side)
VCC = +1.65V,
MAX13003E/MAX13004E/MAX13005E
25
mA
VCC = +1.65V,
MAX13000E/MAX13001E/MAX13002E
1
VL = +1.2V, VCC = +1.65V,
MAX13003E/MAX13004E/MAX13005E
30
VL = +1.2V, VCC = +1.65V,
MAX13000E/MAX13001E/MAX13002E
1
mA
_______________________________________________________________________________________
3
MAX13000E–MAX13005E
ELECTRICAL CHARACTERISTICS (continued)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
ELECTRICAL CHARACTERISTICS (continued)
(VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4)
PARAMETER
SYMBOL
Output Source Current During
Transient (VCC Side)
CONDITIONS
MIN
TYP
VCC = +1.65V,
MAX13003E/MAX13004E/MAX13005E
22
VCC = +1.65V,
MAX13000E/MAX13001E/MAX13002E
1
VL = +1.2V, VCC = +1.65V,
MAX13003E/MAX13004E/MAX13005E
25
MAX
UNITS
mA
Output Source Current During
Transient (VL Side)
mA
VL = +1.2V, VCC = +1.65V,
MAX13000E/MAX13001E/MAX13002E
1
ESD PROTECTION
I/OVCC_
Human Body Model
±15
Air-Gap Discharge (IEC61000-4-2)
±10
Contact Discharge (IEC61000-4-2)
±8
kV
TIMING CHARACTERISTICS
(VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4)
PARAMETER
I/OVCC_ Rise Time
SYMBOL
tRVCC
CONDITIONS
tFVCC
MAX
15
CI/OVCC = 50pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.5V, Figures 1a, 1b
15
400
15
CI/OVCC = 50pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.5V, Figures 1a, 1b
15
400
_______________________________________________________________________________________
UNITS
ns
1400
CI/OVCC = 50pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.65V, Figures 1a, 1b
CI/OVCC = 50pF,
MAX13000E/MAX13001E/MAX13002E,
Figures 1a, 1b
4
TYP
CI/OVCC = 50pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.65V, Figures 1a, 1b
CI/OVCC = 50pF,
MAX13000E/MAX13001E/MAX13002E,
Figures 1a, 1b
I/OVCC_ Fall Time
MIN
1400
ns
Ultra-Low-Voltage Level Translators
(VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4)
PARAMETER
I/OVL_ Rise Time
SYMBOL
tRVL
CONDITIONS
tFVL
MAX
15
CI/OVL = 15pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.5V, Figures 2a, 2b
15
300
15
CI/OVL = 15pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.5V, Figures 2a, 2b
15
CI/OVCC = 50pF,
MAX13003E/MAX13004E/MAX13005E,
Figures 1a, 1b
300
I/OVCC-VL
Propagation Delay from
I/OVL to I/OVCC_ after EN
(Note 5)
ns
ns
1200
20
ns
I/OVL-VCC
Propagation Delay
(Driving I/OVCC_)
UNITS
1200
CI/OVL = 50pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.65V, Figures 2a, 2b
CI/OVL = 50pF,
MAX13000E/MAX13001E/MAX13002E,
Figures 2a, 2b
Propagation Delay
(Driving I/OVL_)
TYP
CI/OVL = 50pF,
MAX13003E/MAX13004E/MAX13005E,
VCC = +1.65V, Figures 2a, 2b
CI/OVL = 50pF,
MAX13000E/MAX13001E/MAX13002E,
Figures 2a, 2b
I/OVL_ Fall Time
MIN
CI/OVCC = 50pF,
MAX13000E/MAX13001E/MAX13002E,
Figures 1a, 1b
1000
VCC > +1.65V, CI/OVL = 50pF,
MAX13003E/MAX13004E/MAX13005E,
Figures 2a, 2b
20
VCC = 1.5V, CI/OVL = 15pF,
MAX13003E/MAX13004E/MAX13005E,
Figures 2a, 2b
20
CI/OVL = 50pF,
MAX13000E/MAX13001E/MAX13002E,
Figures 2a, 2b
1000
CI/OVCC = 50pF, CMOS output, Figure 3
2
CI/OVCC = 50pF, OD output, Figure 3
6
ns
µs
tEN-VCC
_______________________________________________________________________________________
5
MAX13000E–MAX13005E
TIMING CHARACTERISTICS (continued)
TIMING CHARACTERISTICS (continued)
(VCC = +1.5V to +3.6V, VL = +0.9V to VCC, CI/OVL ≤ 15pF, CI/OVCC ≤ 50pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Notes 1, 4)
PARAMETER
SYMBOL
Propagation Delay from
I/OVCC to I/OVL after EN
(Note 5)
CONDITIONS
MIN
TYP
MAX
CI/OVL = 50pF, CMOS output, Figure 4
2
CI/OVL = 50pF, OD output, Figure 4
6
tSKEW
Part-to-Part Skew (Note 6)
UNITS
µs
tEN-VL
Channel-to-Channel Skew
Each translator equally loaded,
MAX13003E/MAX13004E/MAX13005E
±5
Each translator equally loaded,
MAX13000E/MAX13001E/MAX13002E
±250
CI/OVL = 15pF, CI/OVCC = 15pF,
VL = +1.8V, VCC = +2V, ΔT = +5°C,
MAX13003E/MAX13004E/MAX13005E
10
ns
tPPSKEW
Maximum Data Rate
ns
MAX13003E/MAX13004E/MAX13005E
VCC > +1.65V, CI/OVL = 50pF,
CI/OVCC = 50pF
20
Mbps
MAX13000E/MAX13001E/MAX13002E
CI/OVL = 50pF, CI/OVCC = 50pF
230
kbps
Note 1: All devices are 100% production tested at TA = +25°C. Limits are guaranteed by design over the entire temperature range.
Note 2: VL must be less than or equal to VCC during normal operation. However, VL can be greater than VCC during startup and
shutdown conditions.
Note 3: This consumption is referred to as no signal transmission.
Note 4: Guaranteed by design with an input signal full swing, rise/fall time ≤ 3ns, source resistance is 50Ω.
Note 5: Enable input signal full swing and rise/fall time ≤ 50ns.
Note 6: Guaranteed by design, not production tested.
Typical Operating Characteristics
(VCC = +3.3V, VL = +0.9V, TA = +25°C, MAX13003E.)
10
DATA RATE = 230kbps
1
0.1
0.1
0.01
DATA RATE = 230kbps
1.8
2.1
2.4
2.7
3.0
SUPPLY VOLTAGE (V)
3.3
3.6
DATA RATE = 20Mbps
1
0.1
DATA RATE = 230kbps
0.01
0.001
1.5
6
DATA RATE = 20Mbps
10
VCC SUPPLY CURRENT (mA)
100
MAX13000Etoc02
DATA RATE = 20Mbps
1
VL SUPPLY CURRENT (mA)
MAX13000Etoc01
1000
VCC SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VL, VL = 0.9V)
VL SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VCC, VL = 0.9V)
MAX13000Etoc03
VL SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/O VL, VL = 0.9V)
VL SUPPLY CURRENT (μA)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
1.5
1.8
2.1
2.4
2.7
3.0
SUPPLY VOLTAGE (V)
3.3
3.6
1.5
1.8
2.1
2.4
2.7
3.0
SUPPLY VOLTAGE (V)
_______________________________________________________________________________________
3.3
3.6
Ultra-Low-Voltage Level Translators
VL SUPPLY CURRENT vs. TEMPERATURE
(DRIVING I/OVCC, VCC = +3.3V, VL = +0.9V)
0.1
DATA RATE = 230kbps
0.01
MAX13000E toc05
310
DATA RATE = 20Mbps
1.8
2.1
2.4
2.7
3.0
3.3
DATA RATE = 20Mbps
4.00
3.95
3.85
-40
3.6
4.05
3.90
290
1.5
-15
10
35
60
85
-40
-15
10
35
85
60
TEMPERATURE (°C)
TEMPERATURE (°C)
VL SUPPLY CURRENT vs.
CAPACITIVE LOAD ON I/O VCC
(DRIVING I/OVL, VCC = 3.3V, VL = +0.9V)
VCC SUPPLY CURRENT vs.
CAPACITIVE LOAD ON I/O VCC
(DRIVING I/OVL, VCC = 3.3V, VL = +0.9V)
RISE/FALL TIME vs.
CAPACITIVE LOAD ON I/O VCC
(DRIVING I/OVL, VCC = 3.3V, VL = +0.9V)
60
40
20
DATA RATE = 230kbps
7
6
5
4
3
8
7
DATA RATE = 230kbps
30
40
50
60
70
80
20
30
40
50
60
70
80
RISE/FALL TIME vs.
CAPACITIVE LOAD ON I/O VL
(DRIVING I/OVCC, = 3.3V, VL = +0.9V)
PROPAGATION DELAY vs.
CAPACITIVE LOAD ON I/O VCC
(DRIVING I/OVL, VCC, = 3.3V, VL = +0.9V)
tF
5
4
3
tR
2
9.0
8.5
PROPAGATION DELAY (ns)
MAX31000Etoc10
6
8.0
7.5
7.0
6.5
6.0
1
5.5
0
5.0
10
20
30
40
50
60
70
CAPACITIVE LOAD (pF)
80
90 100
10
20
30
40
50
60
70
80
90 100
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
7
tF
3
90 100
CAPACITIVE LOAD (pF)
8
4
0
10
90 100
PROPAGATION DELAY vs.
CAPACITIVE LOAD ON I/O VL
(DRIVING I/OVCC, VCC = 3.3V, VL = +0.9V)
6.5
6.0
PROPAGATION DELAY (ns)
20
5
1
0
10
tR
6
2
2
1
0
MAX31000Etoc09
9
MAX31000Etoc08
DATA RATE = 20Mbps
MAX13000Etoc12
80
8
RISE/FALL TIME (ns)
DATA RATE = 20Mbps
100
9
VCC SUPPLY CURRENT (mA)
120
MAX31000Etoc07
SUPPLY VOLTAGE (V)
140
VL SUPPLY CURRENT (μA)
320
300
0.001
RISE/FALL TIME (ns)
330
4.10
MAX13000E toc06
1.0
MAX31000Etoc11
VCC SUPPLY CURRENT (mA)
DATA RATE = 20Mbps
340
VCC SUPPLY CURRENT (μA)
MAX13000Etoc04
10
VCC SUPPLY CURRENT vs. TEMPERATURE
(DRIVING I/OVCC, VCC = +3.3V, VL = +0.9V)
VCC SUPPLY CURRENT (mA)
VCC SUPPLY CURRENT vs. SUPPLY VOLTAGE
(DRIVING I/OVCC, VL = +0.9V)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
10
20
30
40
50
60
70
CAPACITIVE LOAD (pF)
80
90 100
10
20
30
40
50
60
70
80
90 100
CAPACITIVE LOAD (pF)
_______________________________________________________________________________________
7
MAX13000E–MAX13005E
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +0.9V, TA = +25°C, MAX13003E.)
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +0.9V, TA = +25°C, MAX13003E.)
OD RAIL-TO-RAIL DRIVING (MAX13002E)
(DRIVING I/OVL, VCC = +3.3V,
VL = +0.9V, CI/OVCC = 56pF,
DATA RATE = 230kbps, RPULLUP = 15kΩ)
I/OVL_
500mV/div
GND
RAIL-TO-RAIL DRIVING
(DRIVING I/OVL, VCC = +3.3V, VL = +0.9V,
CI/OVCC = 50pF, DATA RATE = 230kbps)
MAX31000Etoc15
MAX31000Etoc14
I/OVL_
500mV/div
GND
I/OVCC
2V/div
GND
I/OVCC
2V/div
GND
I/OVCC
2V/div
GND
1μs/div
2μs/div
200ns/div
RAIL-TO-RAIL DRIVING
(DRIVING I/OVL, VCC = +3.3V, VL = +0.9V,
CI/OVCC = 50pF, DATA RATE = 20Mbps)
I/OVL_
500mV/div
GND
I/OVCC
2V/div
GND
VCC + VL SUPPLY CURRENT vs. FREQUENCY
(DRIVING I/OVL, VCC = +3.3V, VL = +0.9V)
I/OVL_
500mV/div
GND
I/OVCC
2V/div
GND
40ns/div
VCC + VL SUPPLY CURRENT (mA)
MAX31000Etoc17
MAX31000Etoc16
RAIL-TO-RAIL DRIVING
(DRIVING I/OVL VCC = +3.3V, VL = +0.9V,
CI/OVCC = 50pF, DATA RATE = 4Mbps)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
I/OVL IS DRIVEN WITH A
0.9V SQUARE WAVE
VCC + VL
VCC
VL
100
10ns/div
4250
8400 12,550 16,700 20,850 25,000
FREQUENCY (kHz)
VOHL vs. IOHL FOR VL SIDE
(VCC = 3.3V)
VL = +2.5V
2.5
0.25
0.20
VL = +2.5V
VOHL (V)
VCC
VL
VL = +1.8V
1.5
8400 12,550 16,700 20,850 25,000
FREQUENCY (kHz)
VL = +1.8V
0.15
VL = +0.9V
0.10
1.0
VL = +0.9V
0.05
0.5
0
4250
VOLL (V)
VCC + VL
2.0
MAX13000Etoc21
I/OVCC IS DRIVEN WITH A
3.3V SQUARE WAVE
100
8
3.0
MAX31000Etoc19
13
12
11
10
9
8
7
6
5
4
3
2
1
0
VOLL vs. IOLL FOR VL SIDE
(VCC = 3.3V)
MAX13000Etoc20
VCC + VL SUPPLY CURRENT vs. FREQUENCY
(DRIVING I/OVCC, VCC = +3.3V, VL = +0.9V)
0
0
5
10 15 20 25 30 35 40 45 50
IOHL (μA)
I/OVL_
500mV/div
GND
MAX31000Etoc18
MAX31000Etoc13
OD RAIL-TO-RAIL DRIVING (MAX13005E)
(DRIVING I/OVL, VCC = +3.3V,
VL = +0.9V, CI/OVCC = 56pF,
DATA RATE = 230Mbps, RPULLUP = 1kΩ)
VCC + VL SUPPLY CURRENT (mA)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
0
5
10 15 20 25 30 35 40 45 50
IOLL (μA)
_______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
VOLC (V)
0.20
VCC = +3.3V
VCC = +1.8V
0.10
VCC = +3.3V
3.0
VOHC (V)
VCC = +2.5V
0.15
3.5
MAX13000Etoc22
0.25
MAX13000Etoc23
VOHC vs.
IOHC FOR VCC SIDE
VOLC vs.
IOLC FOR VCC SIDE
VCC = +2.5V
2.5
2.0
VCC = +1.8V
1.5
0.05
1.0
0
0
5
10 15 20 25 30 35 40 45 50
0
5
10 15 20 25 30 35 40 45 50
IOHC (μA)
IOLC (μA)
Pin Descriptions
MAX13000E/MAX13003E
PIN
NAME
FUNCTION
TSSOP
1
UCSP
B1
I/OVL1
CMOS Input/Output 1, Referenced to VL
2
B2
I/OVL2
CMOS Input/Output 2, Referenced to VL
3
A1
I/OVL3
CMOS Input/Output 3, Referenced to VL
4
A2
VL
Logic Input Voltage, +0.9V ≤ VL ≤ VCC. Bypass VL to GND with a 0.1µF
capacitor.
5
A3
EN
Enable Input. When EN is pulled low, I/O VCC1 to I/O VCC6 and I/O VL1 to I/O
VL6 are tri-stated. Drive EN high (VL) for normal operation.
6
A4
I/OVL4
CMOS Input/Output 4, Referenced to VL
7
B3
I/OVL5
CMOS Input/Output 5, Referenced to VL
8
B4
I/OVL6
9
C4
I/OVCC6
CMOS Input/Output 6, Referenced to VCC
10
C3
I/OVCC5
CMOS Input/Output 5, Referenced to VCC
11
D4
I/OVCC4
CMOS Input/Output 4, Referenced to VCC
12
D3
GND
Ground
13
D2
VCC
VCC Input Voltage, +1.5V ≤ VCC ≤ 3.6V. Bypass VCC to GND with a 0.1µF
capacitor. For full ESD protection, use a 1µF bypass capacitor on VCC.
14
D1
I/OVCC3
CMOS Input/Output 3, Referenced to VCC
15
C2
I/OVCC2
CMOS Input/Output 2, Referenced to VCC
16
C1
I/OVCC1
CMOS Input/Output 1, Referenced to VCC
CMOS Input/Output 6, Referenced to VL
_______________________________________________________________________________________
9
MAX13000E–MAX13005E
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +0.9V, TA = +25°C, MAX13003E.)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
Pin Descriptions (continued)
MAX13001E/MAX13004E
PIN
10
NAME
FUNCTION
TSSOP
1
UCSP
B1
OVL1
CMOS Output 1, Referenced to VL
2
B2
OVL2
CMOS Output 2, Referenced to VL
3
A1
OVL3
CMOS Output 3, Referenced to VL
4
A2
VL
Logic Input Voltage, +0.9V ≤ VL ≤ VCC. Bypass VL to GND with a 0.1µF
capacitor.
5
A3
EN
Enable Input. When EN is pulled low, OVCC1 to OVCC6 and IVL1 to IVL6 are
tri-stated. Drive EN high (VL) for normal operation.
6
A4
OVL4
CMOS Output 4, Referenced to VL
7
B3
OVL5
CMOS Output 5, Referenced to VL
8
B4
OVL6
CMOS Output 6, Referenced to VL
9
C4
IVCC6
Open-Drain-Compatible Input 6, Reference to VCC
10
C3
IVCC5
Open-Drain-Compatible Input 5, Referenced to VCC
11
D4
IVCC4
Open-Drain-Compatible Input 4, Referenced to VCC
12
D3
GND
Ground
13
D2
VCC
VCC Input Voltage, +1.5V ≤ VCC ≤ 3.6V. Bypass VCC to GND with a 0.1µF
capacitor. For full ESD protection, use a 1µF bypass capacitor on VCC.
14
D1
IVCC3
Open-Drain-Compatible Input 3, Referenced to VCC
15
C2
IVCC2
Open-Drain-Compatible Input 2, Referenced to VCC
16
C1
IVCC1
Open-Drain-Compatible Input 1, Referenced to VCC
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
MAX13002E/MAX13005E
PIN
NAME
FUNCTION
TSSOP
1
UCSP
B1
IVL1
Open-Drain-Compatible Input 1, Referenced to VL
2
B2
IVL2
Open-Drain-Compatible Input 2, Referenced to VL
3
A1
IVL3
Open-Drain-Compatible Input 3, Referenced to VL
4
A2
VL
Logic Input Voltage, +0.9V ≤ VL ≤ VCC. Bypass VL to GND with a 0.1µF
capacitor.
5
A3
EN
Enable Input. When EN is pulled low, OVCC1 to OVCC6 and IVL1 to IVL6 are
tri-stated. Drive EN high (VL) for normal operation.
6
A4
IVL4
Open-Drain-Compatible Input 4, Referenced to VL
7
B3
IVL5
Open-Drain-Compatible Input 5, Referenced to VL
8
B4
IVL6
Open-Drain-Compatible Input 6, Referenced to VL
9
C4
OVCC6
CMOS Output 6, Referenced to VCC
10
C3
OVCC5
CMOS Output 5, Referenced to VCC
11
D4
OVCC4
CMOS Output 4, Referenced to VCC
12
D3
GND
Ground
13
D2
VCC
VCC Input Voltage, +1.5V ≤ VCC ≤ 3.6V. Bypass VCC to GND with a 0.1µF
capacitor. For full ESD protection, use a 1µF bypass capacitor on VCC.
14
D1
OVCC3
CMOS Output 3, Referenced to VCC
15
C2
OVCC2
CMOS Output 2, Referenced to VCC
16
C1
OVCC1
CMOS Output 1, Referenced to VCC
______________________________________________________________________________________
11
MAX13000E–MAX13005E
Pin Descriptions (continued)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
Test Circuits/Timing Diagrams
I/OVL_
90%
VL
VCC
50%
MAX13000E
10%
EN
tRISE/FALL
I/OVL-VCC
I/OVCC
I/OVL_
SOURCE
I/OVCC_
90%
RS
CI/OVCC
50%
10%
tFVCC
tRVCC
I/OVL-VCC
UNUSED I/Os ARE GROUNDED.
tRISE/FALL < 3ns (MAX13003E/MAX13004E/MAX13005E)
tRISE/FALL < 80ns (MAX13000E/MAX13001E/MAX13002E)
Figure 1b. Timing for Driving I/OVL
Figure 1a. Driving I/OVL
tRISE/FALL
VL
VCC
I/OVCC_
MAX13000E
90%
50%
EN
10%
I/OVCC-VL
I/OVL_
I/OVCC
I/OVL_
I/OVCC-VL
90%
50%
CI/OVL
RS
SOURCE
10%
tFVL
tRVL
tRISE/FALL < 3ns (MAX13003E/MAX13004E/MAX13005E)
UNUSED I/Os ARE GROUNDED.
Figure 2a. Driving I/OVCC
12
tRISE/FALL < 80ns (MAX13000E/MAX13001E/MAX13002E)
Figure 2b. Timing for Driving I/OVCC
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
VL
EN
EN
SOURCE
MAX13000E
t'EN-VCC
0
VL
I/OVCC
I/OVL_
I/OVL_
0
CI/OVCC
VL
VCC
VCC / 2
I/OVCC_
0
VL
t"EN-VCC
EN
SOURCE
MAX13000E
0
EN
I/OVL_
VL
I/OVCC_
0
VCC
I/OVCC
I/OVL_
CI/OVCC
VCC / 2
0
tEN-VCC IS WHICH EVER IS LARGER BETWEEN t'EN-VCC AND t"EN-VCC.
Figure 3. Propagation Delay from I/OVL to I/OVCC After EN
VL
EN
VL
EN
SOURCE
MAX13000E
t'EN-VL
VCC
I/OVCC_
I/OVCC
I/OVL_
0
0
VL
CI/OVL
VCC
I/OVL_
VL / 2
0
VL
EN
VL
EN
SOURCE
t"EN-VL
MAX13000E
VCC
I/OVCC_
I/OVL_
0
VL
I/OVCC
CI/OVL
0
I/OVL_
VL / 2
0
tEN-VL IS WHICH EVER IS LARGER BETWEEN t'EN-VL AND t"EN-VL.
Figure 4. Propagation Delay from I/OVCC to I/OVL After EN
______________________________________________________________________________________
13
MAX13000E–MAX13005E
Test Circuits/Timing Diagrams (continued)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
Detailed Description
The MAX13000E–MAX13005E logic-level translators
provide the level shifting necessary to allow data transfer in multivoltage systems. Externally applied voltages,
VCC and VL, set the logic levels on each side of the
device. Logic signals present on the VL side of the
device appear as higher voltage logic signals on the
VCC side of the device, and vice-versa.
The MAX13000E/MAX13003E are bidirectional level
translators allowing data translation in either direction
(VL ↔ VCC) on any single data line without the use of a
DIRECTION input. The MAX13001E/MAX13002E/
MAX13004E/MAX13005E unidirectional level translators
level shift data in one direction (VL → VCC or VCC →
V L ) on any single data line. The MAX13001E/
MAX13002E/MAX13004E/MAX13005E unidirectional
translators’ inputs have the capability to interface with
both CMOS and open-drain (OD) outputs. For more
information, see the Ordering Information section and
the Input Driver Requirements section.
The MAX13000E–MAX13005E accept VL from +0.9V to
+3.6V. All devices have VCC ranging from +1.5V to
+3.6V, making them ideal for data transfer between
low-voltage ASICs/PLDs and higher voltage systems.
The MAX13000E–MAX13005E feature low VCC quiescent supply current of less than 4µA, and VL quiescent
supply current of less than 2µA when in shutdown. The
MAX13000E–MAX13005E have ±15kV ESD protection
on the VCC side for greater protection in applications
that route signals externally. The ESD protection is
specified using the Human Body Model (HBM).The
MAX13000E/MAX13001E/MAX13002E operate at a
guaranteed 230kbps data rate. The MAX13003E/
MAX13004E/MAX13005E operate at a guaranteed
20Mbps data rate when VCC > +1.65V.
Level Translation
For normal operation, ensure that +1.5V ≤ VCC ≤ +3.6V,
and +0.9V ≤ VL ≤ VCC. During power-up sequencing,
VL ≥ VCC does not damage the device whenever VL is
within the absolute maximum ratings (see the Absolute
Maximum Ratings section). During power-supply
sequencing, when VCC is floating and VL is powered
up, 1mA of current can be sourced to each load on the
VL side, yet the device does not latch up.
The MAX13000E–MAX13005E are designed to have
VCC ≥ VL at all times; however, if VCC is turned off, the
part will not be damaged and will not latch up. To prevent excessive leakage currents in either the I/O or
supply lines, the I/O on the VL side must be left in the
high state.
14
The maximum data rate for the MAX13000E–
MAX13005E depends heavily on the load capacitance
(see the Typical Operating Characteristics), output
impedance of the driver, and the operational voltage
range (see the Timing Characteristics table).
Open-Drain Operation
The MAX13001E/MAX13002E/MAX13004E/MAX13005E
have input stages specifically designed to accommodate external open-drain drivers. When using opendrain drivers, the MAX13001E/MAX13002E/
MAX13004E/MAX13005E operate in a unidirectionalonly mode, translating from the OD side to the CMOS
side. For improved performance, the rise- and fall-time
accelerators are present on both the CMOS and the
OD side. See the Input-Driver Requirement section. Do
not use pullup resistors greater than 15kΩ for proper
operation, and smaller pullup resistance may be needed for higher speed operation.
Input-Driver Requirements
The MAX13000E–MAX13005E feature four different
architectures based on the speed of the part, as well as
on whether the translator is a CMOS-to-CMOS translator, or whether it is an OD-to-CMOS translator.
20Mbps CMOS-to-CMOS Bidirectional Translator
(MAX13003E)
The MAX13003E architecture is based on a one-shot
accelerator output stage (Figure 5). Accelerator output
stages are always in tri-state, except when there is a
transition on any of the translators on the input side,
either I/OVL or I/OVCC. A short pulse is generated during which the one-shot output stage becomes active
and charges/discharges the capacitances at the I/Os.
Due to its bidirectional nature, the accelerator stages on
both the I/OVCC and the I/OVL become active during an
I/O transition from low to high or high to low. This can
lead to some current feeding into the external source
that is driving the translator. However, this behavior
helps speed up the transition on the driven side.
The type of devices that drive the inputs of the
MAX13003E is usually specified with an output drivecurrent capability (IOUT). When driving the inputs of the
MAX13003E, the maximum achievable speed is constrained by the drive current of the external driver. To
insure the maximum possible throughput of 20Mbps, the
external driver should meet the following requirement:
IOUT ≥ 1.67 × 108 × V × (CIN + CP)
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
MAX13000E–MAX13005E
VL
VCC
P
ONE-SHOT
5kΩ
I/OVL
I/OVCC
INVERTER 2
INVERTER 1
N
ONE-SHOT
P
ONE-SHOT
5kΩ
INVERTER 3
INVERTER 4
N
ONE-SHOT
Figure 5. Architecture of 20Mbps, CMOS-to-CMOS Bidirectional Translators
where, CP is the parasitic capacitance of the traces, V
is the supply voltage of the driven side (i.e., VL or VCC),
and CIN is the input capacitance of the driven side
(CIN = 10pF for VL side, CIN = 20pF for VCC side).
20Mbps OD-to-CMOS Unidirectional Translators
(MAX13004E/MAX13005E)
The MAX13004E/MAX13005E architecture is virtually the
same as that for the bidirectional CMOS-to-CMOS translators, the only difference being that the output inverter
(inverter 4) at the driving side accommodates the driving
capabilities of an open-drain output (Figure 6).
For proper operation, a pullup resistor needs to be connected from the open-drain output to the power supply of
the driving side. Use pullup resistors no larger than 15kΩ.
230kbps CMOS-to-CMOS Bidirectional Translator
(MAX13000E)
The architecture of the MAX13000E lacks the one-shot
accelerator output stages since the transitions that this
device handles are limited by its data rate, 230kbps
(Figure 7).
For proper operation, the driver must meet the following
conditions: 1kΩ maximum output impedance and 1mA
minimum output current.
230kbps OD-to-CMOS Unidirectional Translators
(MAX13001E/MAX13002E)
The architecture of the MAX13001E/MAX13002E is similar to that of the 230kbps CMOS-to-CMOS part, with the
difference that it accommodates the driving capability of
an open-drain output on the driving side, and also that it
has only a single one-shot output stage (Figure 8).
For proper operation, a pullup resistor needs to be connected from the open-drain output to the power supply of
the driving side. Use pullup resistors no larger than 15kΩ.
Figure 9 shows a graph of the typical input current versus input voltage for all of the above configurations.
Enable Output Mode (EN)
The MAX13000E–MAX13005E feature an enable (EN)
input. Drive EN low to set the MAX13000E–MAX13005E
I/Os in tri-state mode. Drive EN high (VL) for normal
operation.
±15kV ESD Protection
As with all Maxim devices, ESD-protection structures
are incorporated on all pins to protect against electrostatic discharges encountered during handling and
assembly. The I/OV CC lines have extra protection
against static discharge. Maxim’s engineers have
developed state-of-the-art structures to protect these
pins against ESD of ±15kV without damage. The ESD
______________________________________________________________________________________
15
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
20Mbps OPEN-DRAIN-TO-CMOS UNIDIRECTIONAL LEVEL TRANSLATOR
VCC/VL
VL/VCC
P
ONE-SHOT
5kΩ
IVCC/IVL
OVL/OVCC
INVERTER 2
OPEN-DRAIN
COMPATIBLE INPUT
INVERTER 1
CMOSCOMPATIBLE INPUT
N
ONE-SHOT
P
ONE-SHOT
INVERTER 3
5kΩ
75kΩ
INVERTER
4
N
ONE-SHOT
Figure 6. Architecture of 20Mbps, OD-to-CMOS Unidirectional Translators
230kbps Bidirectional CMOS-TO-CMOS Level Translator
VL
VCC
5kΩ
I/OVL
I/OVCC
INVERTER 1
INVERTER 2
5kΩ
INVERTER 4
INVERTER 3
Figure 7. Architecture of 230kbps, CMOS-to-CMOS Bidirectional Translator
16
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
MAX13000E–MAX13005E
230kbps OPEN-DRAIN-TO-CMOS UNIDIRECTIONAL LEVEL TRANSLATOR
VCC/VL
VL/VCC
5kΩ
IVCC/IVL
OVL/OVCC
INVERTER 1
OPEN-DRAIN
COMPATIBLE INPUT
INVERTER 2
CMOSCOMPATIBLE INPUT
INVERTER 3
5kΩ
75kΩ
INVERTER
4
5kΩ
N
ONE-SHOT
Figure 8. Architecture of 230kbps, OD-to-CMOS Unidirectional Translator
structures withstand high ESD in all states: normal
operation, tri-state output mode, and power-down. After
an ESD event, Maxim’s E-versions keep working without latchup, whereas competing products can latch
and must be powered-down to remove latchup.
ESD protection can be tested in various ways. The
I/OVCC lines of the MAX13000E–MAX13005E are characterized for protection to ±15kV using the Human
Body Model.
IIN
VTH_IN / RIN1
ESD Test Conditions
0
VTH_IN
VIN
VS
WHERE, VS = VCC OR VL
(VS - VTH_IN) /
RIN2
RIN1 = RIN2 = 5kΩ FOR CMOS-TO-CMOS TRANSLATORS
RIN1 = 75kΩ FOR OD-TO-CMOS TRANSLATORS
Figure 9. Typical IIN vs. VIN
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents
test setup, test methodology, and test results.
Human Body Model
Figure 10 shows the Human Body Model and Figure 11
shows the current waveform it generates when discharged into a low impedance. This model consists of
a 100pF capacitor charged to the ESD voltage of interest, which is then discharged into the test device
through a 1.5kΩ resistor.
______________________________________________________________________________________
17
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
RC 1MΩ
CHARGE-CURRENTLIMIT RESISTOR
HIGHVOLTAGE
DC
SOURCE
CS
100pF
RC
50Ω TO 100Ω
RD 1500Ω
DISCHARGE
RESISTANCE
CHARGE-CURRENTLIMIT RESISTOR
DEVICE
UNDER
TEST
STORAGE
CAPACITOR
HIGHVOLTAGE
DC
SOURCE
Cs
150pF
RD
330Ω
DISCHARGE
RESISTANCE
DEVICE
UNDER
TEST
STORAGE
CAPACITOR
Figure 10. Human Body ESD Test Model
Figure 12. IEC 61000-4-2 Contact Discharge Test Model
IP 100%
90%
Ir
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
UCSP Package Considerations
AMPERES
For general UCSP package information and PC layout
considerations, please refer to Maxim application note:
Wafer-Level Chip-Scale Package.
36.8%
10%
0
0
tRL
UCSP Reliability
TIME
tDL
CURRENT WAVEFORM
Figure 11. Human Body Current Waveform
IEC 61000-4-2 Standard ESD Protection
The IEC 61000-4-2 standard (Figure 12) specifies ESD
tolerance for electronic systems. The IEC61000-4-2
model specifies a 150pF capacitor that is discharged
into the device through a 330Ω resistor. The
MAX13000E–MAX13005E’s I/O on the V CC side are
rated for IEC 61000-4-2 standard, (8kV Contact
Discharge and ±10kV Air-Gap Discharge).
The IEC 61000-4-2 model discharges higher peak current and more energy than the HBM due to the lower
series resistance and larger capacitor.
Applications Information
The chip-scale package (UCSP) represents a unique
packaging form factor that may not perform equally to a
packaged product through traditional mechanical reliability tests. UCSP reliability is integrally linked to the
user’s assembly methods, circuit board material, and
usage environment. The user should closely review
these areas when considering use of a UCSP package.
Performance through Operating Life Test and Moisture
Resistance remains uncompromised as it is primarily
determined by the wafer-fabrication process.
Mechanical stress performance is a greater consideration for a UCSP package. UCSPs are attached through
direct solder contact to the user’s PC board, foregoing
the inherent stress relief of a packaged product lead
frame. Solder joint contact integrity must be considered. Information on Maxim’s qualification plan, test
data, and recommendations are detailed in the UCSP
application note, which can be found on Maxim’s website at www.maxim-ic.com.
Power-Supply Decoupling
To reduce ripple and the chance of transmitting incorrect data, bypass VL and VCC to ground with a 0.1µF
capacitor. To ensure full ±15kV ESD protection, bypass
VCC to ground with a 1µF capacitor. Place all capacitors as close to the power-supply inputs as possible.
18
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
VL
VCC
EN
MAX13000E–MAX13005E
I/OVL1
I/OVCC1
I/OVL2
I/OVCC2
I/OVL3
I/OVCC3
I/OVL4
I/OVCC4
I/OVL5
I/OVCC5
I/OVL6
I/OVCC6
GND
______________________________________________________________________________________
19
MAX13000E–MAX13005E
Functional Diagram
Ultra-Low-Voltage Level Translators
MAX13000E–MAX13005E
Typical Operating Circuits
+0.9V
+2.8V
0.1μF
1μF
VCC
VL
+0.9V
SYSTEM
CONTROLLER
+2.8V
SYSTEM
MAX13001E
DATA1
DATA2
EN
MAX13004E
OVL_1
IVCC_1
OVL_2
IVCC_2
DATA3
OVL_3
IVCC_3
DATA3
DATA4
OVL_4
IVCC_4
DATA4
DATA5
OVL_5
IVCC_5
DATA5
DATA6
OVL_6
IVCC_6
DATA6
DATA1
DATA2
GND
+0.9V
+2.8V
0.1μF
1μF
VCC
VL
+0.9V
SYSTEM
CONTROLLER
+2.8V
SYSTEM
MAX13002E
DATA1
DATA2
EN
MAX13005E
IVL_1
OVCC_1
IVL_2
OVCC_2
DATA3
IVL_3
OVCC_3
DATA3
DATA4
IVL_4
OVCC_4
DATA4
DATA5
IVL_5
OVCC_5
DATA5
DATA6
IVL_6
OVCC_6
DATA6
DATA1
DATA2
GND
20
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
+0.9V
+2.8V
0.1μF
1μF
VL
+0.9V
SYSTEM
CONTROLLER
VCC
+2.8V
SYSTEM
MAX13000E
DATA1
EN
MAX13003E
I/OVL_1
I/OVCC_1
DATA1
DATA2
I/OVL_2
I/OVCC_2
DATA2
DATA3
I/OVL_3
I/OVCC_3
DATA3
DATA4
I/OVL_4
I/OVCC_4
DATA4
DATA5
I/OVL_5
I/OVCC_5
DATA5
DATA6
I/OVL_6
I/OVCC_6
DATA6
GND
Selector Guide
PART
DATA
RATE
(bps)
NUMBER OF
BIDIRECTIONAL
TRANSLATORS
NUMBER OF
VL → VCC
TRANSLATORS
NUMBER OF
VCC → VL
TRANSLATORS
TRANSLATOR
CONFIGURATION
MAX13000E
230k
6
—
—
CMOS-to-CMOS
MAX13001E
230k
—
—
6
OD-to-CMOS
MAX13002E
230k
—
6
—
OD-to-CMOS
MAX13003E
20M
6
—
—
CMOS-to-CMOS
MAX13004E
20M
—
—
6
OD-to-CMOS
MAX13005E
20M
—
6
—
OD-to-CMOS
______________________________________________________________________________________
21
MAX13000E–MAX13005E
Typical Operating Circuits (continued)
Ultra-Low-Voltage Level Translators
MAX13000E–MAX13005E
Pin Configurations (continued)
BOTTOM VIEW
MAX13001E/MAX13004E
IVCC3
VCC
GND
MAX13002E/MAX13005E
IVCC4
D
OVCC3
VCC
GND
OVCC4
OVCC1
OVCC2
OVCC5
OVCC6
IVL1
IVL2
IVL5
IVL6
IVL3
VL
EN
IVL4
2
3
4
D
IVCC1
IVCC2
IVCC5
IVCC6
C
C
OVL1
OVL2
OVL5
OVL6
B
B
OVL3
VL
EN
OVL4
A
A
1
2
3
4
1
4 X 4 UCSP
4 X 4 UCSP
TOP VIEW
I/OVL1 1
16 I/OVCC1
OVL1 1
16 IVCC1
IVL1 1
16 OVCC1
I/OVL2 2
15 I/OVCC2
OVL2 2
15 IVCC2
IVL2 2
15 OVCC2
I/OVL3 3
14 I/OVCC3
OVL3 3
14 IVCC3
IVL3 3
14 OVCC3
VL 4
EN 5
13 VCC
MAX13000E
MAX13003E
EN 5
13 VCC
MAX13001E
MAX13004E
VL 4
12 GND
EN 5
13 VCC
MAX13002E
MAX13005E
12 GND
I/OVL4 6
11 I/OVCC4
OVL4 6
11 IVCC4
IVL4 6
11 OVCC4
I/OVL5 7
10 I/OVCC5
OVL5 7
10 IVCC5
IVL5 7
10 OVCC5
I/OVL6 8
9
I/OVCC6
OVL6 8
9
IVCC6
IVL6 8
9
TSSOP
22
12 GND
VL 4
TSSOP
TSSOP
______________________________________________________________________________________
OVCC6
Ultra-Low-Voltage Level Translators
PART
TEMP RANGE
PINPACKAGE
MAX13000EEBE+T*
-40°C to +85°C
16 UCSP
(4mm × 4mm)
MAX13001EEUE+
-40°C to +85°C
16 TSSOP
MAX13001EEBE+T*
-40°C to +85°C
16 UCSP
(4mm × 4mm)
MAX13002EEUE+
-40°C to +85°C
16 TSSOP
MAX13002EEBE+T*
-40°C to +85°C
16 UCSP
(4mm × 4mm)
MAX13003EEUE+
-40°C to +85°C
16 TSSOP
MAX13003EEBE+T*
-40°C to +85°C
16 UCSP
(4mm × 4mm)
MAX13004EEUE+
-40°C to +85°C
16 TSSOP
MAX13004EEBE+T*
-40°C to +85°C
16 UCSP
(4mm × 4mm)
MAX13005EEUE+
-40°C to +85°C
16 TSSOP
Chip Information
PROCESS: BiCMOS
16 UCSP
(4mm × 4mm)
*Future Product—contact factory for availability.
+Denotes a lead(Pb)-free/RoHS-compliant package.
T =Tape and reel.
MAX13005EEBE+T*
-40°C to +85°C
______________________________________________________________________________________
23
MAX13000E–MAX13005E
Ordering Information (continued)
MAX13000E–MAX13005E
Ultra-Low-Voltage Level Translators
Package Information
For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.
24
PACKAGE TYPE
PACKAGE CODE
OUTLINE NO.
LAND PATTERN NO.
16 TSSOP
U16+2
21-0066
90-0117
16 UCSP
B16+1
21-0101
Refer to Application Note 1891
______________________________________________________________________________________
Ultra-Low-Voltage Level Translators
REVISION
NUMBER
REVISION
DATE
0
6/05
Initial release
1
5/11
Added lead-free information to the Ordering Information
DESCRIPTION
PAGES
CHANGED
—
1, 23
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 25
© 2011 Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.
MAX13000E–MAX13005E
Revision History