UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES 1 TO-220 1 * VCEO 400 V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100℃ * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃ tc @ 8 A, 100℃ is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. TO-220F *Pb-free plating product number:MJE13009L ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13009-TA3-T MJE13009L-TA3-T MJE13009-TF3-T MJE13009L-TF3-T MJE13009-T3P-T MJE13009L-T3P-T Package TO-220 TO-220F TO-3P Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube MJE13009L-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F, T3P: TO-3P (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current Base Current Emitter Current Continuous Peak* Continuous Peak* Continuous SYMBOL VCEO VCBO IEBO IC ICM IB IBM IE RATINGS 400 700 9 12 24 6 12 18 IEM 36 Peak* Total Power Dissipation @ Ta = 25℃ Derate above 25℃ Total Power Dissipation @ TC = 25℃ Derate above 25℃ PD PD UNIT V V V A A A 2 16 100 800 W mW/℃ W mW/℃ ℃ ℃ Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case SYMBOL θJA θJC RATINGS 54 4 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.) PARAMETER *OFF CHARACTERISTICS Collector- Emitter Sustaining Voltage Collector Cutoff Current VCBO=Rated Value Emitter Cutoff Current *ON CHARACTERISTICS DC Current Gain SYMBOL VCEO TEST CONDITIONS TYP MAX UNIT IEBO IC = 10mA, IB = 0 VBE(OFF) = 1.5Vdc VBE(OFF) = 1.5Vdc, TC = 100℃ VEB = 9Vdc, IC = 0 hFE1 IC = 5A,VCE = 5V 40 IC = 8A,VCE = 5V 30 IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 8A, IB = 1.6A, TC = 100℃ IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A, TC = 100℃ 1 1.5 3 2 1.2 1.6 V V V V V V 1.5 V ICBO hFE 2 Current-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) DYNAMIC CHARACTERISTICS Transition frequency fT IC = 500mA, VCE = 10V, f = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz SWITCHING CHARACTERISTICS (Resistive Load, Table 1) Delay Time tDLY VCC = 125Vdc, IC = 8A Rise Time tR IB1 = IB2 = 1.6A, tP = 25µs Storage Time tS Duty Cycle ≤1% Fall Time tF Inductive Load, Clamped (Table 1, Figure 13) Voltage Storage Time tS IC=8A, Vclamp=300V, IB1=1.6A VBE(OFF) = 5V, TC = 100℃ Crossover Time tC *Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 V 1 5 1 4 mA mA MHz pF 180 0.06 0.45 1.3 0.2 0.1 1 3 0.7 µs µs µs µs 0.92 0.12 2.3 0.7 µs µs 2 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5V VCC 33 1N4933 +125V MJE210 TEST CIRCUITS 0.001μF PW 2N2222 1k +5V RC D.U.T. 47 NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 51 SCOPE RB D1 MJE200 -4.0V –VBE(off) GAP for 200 µH/20 A Lcoil = 200 µH VCC = 20 V Vclamp = 300 Vdc VCC = 125 V RC = 15 Ω D1 = 1N5820 or Equiv. RB = Ω +10V OUTPUT WAVEFORMS TEST WAVEFORMS TUT 100 1/2W Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 *SELECTED FOR . 1 kV VCE 2N2905 270 Vclamp 5.1k IB 1k 1N4933 CIRCUIT VALUES MR826* IC RB 1k 0.02μF L 33 1N4933 5V DUTY CYCLE ≤ 10% 68 tR, tF ≤ 10 ns RESISTIVE SWITCHING 25 µs tF CLAMPED IC tF UNCLAMPED 9 t2 ICM t1 ADJUSTED TO OBTAIN IC t t1 t1≈ tF Lcoil (ICM) VCC VCE V CEM TIME V clamp t2≈ Lcoil (ICM) V clamp t2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 Test Equipment Scope–Tektronics 475 or Equivalent -8V tR, tF < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC 3 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS CIRCUIT LOAD LINE DIAGRAMS VOUT Collector Current VCC TURN–ON (FORWARD BIAS) SOA tON ≤ 10 ms DUTY CYCLE ≤ 10% PD = 4000 W 2 24A SERIES SWITCHING REGULATOR TIME DIAGRAMS IC TC = 100°C 350V TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9.0 V DUTY CYCLE ≤ 10% 12A TURN–ON TIME VCE VCC TURN–OFF + VCC 400V 1 700V 1 COLLECTOR VOLTAGE RINGING CHOKE INVERTER VOUT N Collector Current VCC TURN–OFF Collector Current VCE V CC+ VCC 700V 1 t COLLECTOR VOLTAGE TURN–ON (FORWARD BIAS) SOA tON ≤ 10 ms DUTY CYCLE ≤ 10% IC tOFF tON PD = 4000 W 2 350V TC = 100°C 12A TURN–ON t TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9.0 V DUTY CYCLE ≤ 10% TURN–OFF + t LEAKAGE SPIKE N(VO) 400V 1 24A VCC TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9.0 V DUTY CYCLE ≤ 10% TURN–ON VCC+N(VOUT ) VOUT tOFF tON 350V 12A t IC PD = 4000 W 2 TC = 100°C + VCC PUSH–PULL INVERTER/CONVERTER TIME TURN–ON (FORWARD BIAS) SOA tON ≤ 10 ms DUTY CYCLE ≤ 10% 24A t VCE 2 VCC 2 VCC VCC VCC 700V 400V 1 1 t COLLECTOR VOLTAGE SOLENOID DRIVER Collector Current VCC SOLENOID IC TURN–ON (FORWARD BIAS) SOA tON ≤ 10 ms DUTY CYCLE ≤ 10% 24A TC = 100°C TURN–OFF TURN–OFF (REVERSE BIAS) SOA 1.5 V ≤ VBE(off) ≤ 9.0 V DUTY CYCLE ≤ 10% 2 VCC TURN–ON VCC 400V 1 V CE VCC 700V 1 COLLECTOR VOLTAGE UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tOFF t 350V 12A + tON PD = 4000 W 2 t 4 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE IC(A) 3 5 8 12 TC(℃) 25 100 25 100 25 100 25 100 tsv(ns) 770 1000 630 820 720 920 640 800 trv(ns) 100 230 72 100 55 70 20 32 tfi(ns) 150 160 26 55 27 50 17 24 tti(ns) 200 200 10 30 2 8 2 4 tc(ns) 240 320 100 180 77 120 41 54 SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10–90% VCEM tfi = Current Fall Time, 90–10% ICM tti = Current Tail, 10–2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi ≈ tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25℃ and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100℃. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR TYPICAL CHARATERISTICS Figure 2. Reverse Bias Switching Safe Operating Area Figure 1. Forward Bias Safe Operating Area 14 10μs 20 10 5 TC = 25℃ 10 100μs 1ms 2 dc 1 0.5 THERMAL LIMIT BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.2 0.1 0.05 12 Collector, IC (A) Collector Current, IC (A) 100 50 TC ≤ 100℃ IB1 = 2.5 A 8 6 VBE(OFF) = 9V 4 5V 2 0.02 0.01 3V 1.5V 0 5 7 10 20 30 50 70 100 200 300 Collector –Emitter Voltage, VCE (V) 500 0 100 200 300 400 500 600 700 Collector –Emitter Clamp Voltage, VCBO (V) 800 Figure 3. Forward Bias Power Derating 1 Second Breakdown Derating 0.6 Thermal Derating 0.4 0.2 0 20 60 40 80 100 120 140 160 Case Temperature, TC (°C) Figure 4. Typical Thermal Response [Zθ JC(t)] Transient Thermal Resistance (Normalized), r(t) Power Derating Factor 0.8 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25℃; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25℃. Second breakdown limitations do not derate the same as thermal limitations . Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section. 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) ZθJC (t) = r(t) θJC θJC = 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) – TC = P(pk) Zθ JC(t) Duty Cycle, D = t1/t2 0.05 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 Single Pulse 0.02 0.05 0.1 0.2 0.5 1 5 2 Time, t (ms) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 20 50 100 200 500 1.0k 6 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) Figure 6. Collector Saturation Region Figure 5. DC Current Gain 50 Collector–Emitter Voltage, VCE (V) 30 DC Current Gain, hF E 2 VCE = 5V TJ = 150℃ TJ = 25℃ 20 10 7 5 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC = 12A 1.6 IC= 3A IC = 1A 1.2 0.8 0.4 TJ = 25℃ 0 0.050.07 0.1 20 IC = 5A IC = 8A Collector Current, IC (A) 0.2 0.3 0.5 0.7 1 2 3 5 Base Current, IB (A) Figure 7. Base–Emitter Saturation Voltage Figure 8. Collector–Emitter Saturation Voltage 0.7 1.4 IC/IB = 3 IC/IB = 3 0.6 1.2 TJ = 150℃ Voltage, V (V) Voltage, V (V) 0.5 1 0.8 TJ = 25℃ 0.3 0.2 TJ = 150℃ 0.6 0.4 TJ = 25℃ 0.1 0.4 0.2 0.3 0.5 0.7 1 2 3 5 Collector Current, IC (A) 7 10 0 0.2 0.3 20 Figure 9. Collector Cutoff Region 4k 2k 1k TJ = 150℃ Capacitance, C (pF) Collector Current, IC (mA) VCE = 250V 125℃ 100℃ 10 75℃ 50℃ 1 25℃ 0.1 -0.4 7 10 REVERSE FORWARD -0.2 0 +0.2 +0.4 Base–Emitter Voltage, V BE (V) +0.6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 20 Figure 10. Capacitance 10k 100 0.5 0.7 1 2 3 5 Collector Currnet, IC (A) TJ = 25℃ Cib 1k 800 600 400 200 Cob 100 80 60 40 0.1 0.2 0.5 1 2 5 10 20 50 100 Reverse Voltage, VR (V) 200 500 7 of 8 QW-R203-024,D MJE13009 NPN SILICON TRANSISTOR ■ RESISTIVE SWITCHING PERFORMANCE Figure 11. Turn–On Time 1k 700 Figure 12. Turn–Off Time 2k VCC = 125V IC/IB = 5 TJ = 25℃ tS 1k 700 300 200 Time, t (ns) Time, t (ns) 500 tR 100 VCC = 125V IC/IB = 5 TJ = 25℃ 500 300 200 tF tDLY @ VBE(OFF ) = 5V 70 50 0.2 0.3 0.5 0.7 1 2 3 5 7 10 100 0.2 0.3 20 0.5 0.7 1 2 5 7 10 20 Collector Crrent, IC (A) Collector Current, IC (A) Figure 13. Typical Inductive Switching Waveforms (at 300V and 12A with IB1 = 2.4A and VBE(off) = 5V) CURRENT 2 A/DIV V CE VOLTAGE 50 V/DIV IC IC VCE TIME 20 ns/DIV U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R203-024,D