BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products High Power NPN Silicon Transistors (15A, 400V and 450V, 175W) FEATURES Designed for general-purpose switching applications. 13.10 Max. 26.00 Max. 8.60 10.90 1.60 Collector-Emitter saturation voltage V CE(sat) = 1.5 V dc (Max) @ l C = 8 Adc 1 16.85 The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. Φ20.00 Max. 38.50 DESCRIPTION 30.00 Φ1.00 High voltage capability, high current capability 2 lt is intended for power switching circuits and industrial applications from single and threephase mains. 2- Φ 4.0 Thru. APPLICATIONS All dimensions in millimeters Switch mode power supplies INTERNAL SCHEMATIC DIAGRAM Flyback and forward single transistor low power converters Inverters Solenoid and Relay drivers TAB C (TAB) (1) 1 Motor controls Deflection circuits B 2 TO-3 (2) E ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) VALUE SYMBOL UNIT PARAMETER BUX48 BUX48A VCES Collector to emitter voltage (V BE = 0) 850 1000 V CER Collector to emitter voltage (R BE = 10Ω) 850 1000 V CEO Collector to emitter voltage (I B = 0) 400 450 V EBO Emitter to base voltage (I C = 0) IC V 7 Collector current 15 I CM Collector peak current 30 I CP Collector peak current, non repetitive (t p < 20 µ s) 55 IB Base current I BM 4 Base peak current 20 T C = 25°C 175 T C = 100°C 100 Total power dissipation W PD Derate above 25°C 1.0 Tj Junction temperature 200 T stg Storage temperature -65 to 200 TL www.nellsemi.com A Maximum lead temperature for soldering purposes : 1/8" from case for 5 seconds Page 1 of 8 275 W/ºC ºC BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE UNIT 1.0 ºC/W Thermal resistance, junction to case Rth(j-c) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) CONDITIONS PARAMETER SYMBOL MIN MAX OFF CHARACTERISTICS ICES ICER V CE = rated V CES 200 µA V CE = rated V CES , T C = 125°C 2.0 mA V CE = rated V CER 500 µA 4 mA 1.0 mA Collector cutoff current ( V BE = 0 ) Collector cutoff current ( R BE = 10Ω ) V CE = rated V CER , T C = 125°C I EBO V CEO (SUS) * Emitter cutoff current V EB = 5V, l C = 0 Collector to emitter sustaining voltage l C = 200mA, l B = 0, L = 25mH V CES Collector to emitter voltage V EBO Emitter to base voltage BUX48 400 BUX48A 450 BUX48 850 V V BE = 0 BUX48A l C = 0 , I E = 50mA 1000 7 30 ON CHARACTERISTICS l C = 10A , l B = 2A l C = 15A , l B = 4A V CE(sat) * Collector to emitter saturation voltage 1.5 BUX48 3.5 l C = 15A, l B = 3A 5 l C = 8A, l B = 1.6A V 1.5 BUX48A l C = 12A, l B = 2.4A V BE(sat) * h FE 5 l C = 10A, l B = 2A BUX48 1.6 l C = 8A, l B = 1.6A BUX48A 1.6 l C = 10A, V CE = 5V BUX48 8 l C = 8A, V CE = 5V BUX48A 8 Base to emitter saturation voltage V DC current gain DYNAMIC CHARACTERISTICS C ob Output capacitance V CB = 10V, I E = 0, f test = 1 MHz *Pulsed : Pulse duration = 300 µs, duty cycle ≤ 2%, V c1 =300V, V BE(off) = 5V, L C = 180µH www.nellsemi.com Page 2 of 8 350 pF BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products RESISTIVE SWITCHING TIMES SYMBOL PARAMETER ton Turn-on time CONDITIONS MIN MAX V CC = 300V, l C = 10A, l B1 = 2A BUX48 1 V CC = 300V, l C = 8A, l B1 = 1.6A BUX48A 1 V CC = 300V, l C = 10A, l B1 = 2A BUX48 0.2 V CC = 300V, l C = 8A, l B1 = 1.6A BUX48A 0.2 V CC = 300V, l C = 10A, l B1 = -l B2 = 2A BUX48 0.7 V CC = 300V, l C = 8A, l B1 = -l B2 = 1.6A BUX48A 0.7 V CC = 300V, l C = 10A, l B1 = -l B2 = 2A BUX48 2 V CC = 300V, l C = 8A, l B1 = -l B2 = 1.6A BUX48A 2 V CC = 300V, l C = 10A, l B1 = -l B2 = 2A BUX48 0.4 V CC = 300V, l C = 8A, l B1 = -l B2 = 1.6A BUX48A 0.4 Delay time td tr µs Rise time ts Storage time tf Fall time *V BE = -5V, duty cycle = 2%, t p = 30 µs INDUCTIVE SWITCHING TIMES SYMBOL CONDITIONS PARAMETER V CC = 300V, l C = 10A, L B = 3 µH ts tf MIN T C = 25°C TYP MAX 1.3 BUX48 l B1 = 2A, V BE = -5V T C =125°C V CC = 300V, l C = 8A, L B = 3 µH T C = 25°C l B1 = 1.6A, V BE = -5V T C =125°C V CC = 300V, l C = 10A, L B = 3 µH T C = 25°C l B1 = 2A, V BE = -5V T C =125°C V CC = 300V, l C = 8A, L B = 3 µH T C = 25°C l B1 = 1.6A, V BE = -5V T C =125°C 2.5 µs Storage time 1.5 BUX48A 2.5 0.10 BUX48 0.4 µs Fall time BUX48A *Duty cycle = 2%, t p = 30 µs www.nellsemi.com 0.15 Page 3 of 8 0.4 BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products DC CHARACTERISTICS Fig.1 DC current gain Fig.2 Collector saturation region 90% 30 DC current gain, h FE Collector-emitter voltage, V CE (V) 50 10% 20 10 7 5 3 2 V CE = 5V 3 2 5 8 10 20 30 5 3 l C = 5A 50 7.5A 10A 15A 1 0.5 0.3 T C = 25°C 0.1 0.1 0.3 0.5 1 2 Collector current, l C (A) Base current, l B (A) Fig.3 Collector-Emitter saturation voltage Fig.4 Base-Emitter voltage 3 4 5 βf =5 3 Base-Emitter voltage, V BE (V) Collector-Emitter voltage, V CE (V) 1 1 10 90% 2 10% 1 0.7 0.5 0.3 0.2 2 T J = 25°C 1 0.7 T J = 100°C 0.5 0.3 0.1 1 3 2 5 7 10 20 30 50 0.1 Fig.5 Collector cutoff region Fig.6 Capacitance 10 10k C ib 10 3 Capacitance, C (pF) Collector current, l C (µA) 3 Collector current, l C (A) V CE = 250V T j = 150°C 10 1 1 Collector current, l C (A) 10 4 10 2 0.3 125°C 100°C 75°C REVERSE 10 0 FORWARD 1k C ob 100 T J = 25°C 25°C 10 -1 -0.4 10 -0.2 0 0.2 0.4 0.6 10 100 Reverse voltage, V R (V) Base-Emitter voltage,V BE (V) www.nellsemi.com 1 Page 4 of 8 1000 BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products Table.1 Test Conditions for Dynamic Performance RBSOA AND INDUCTIVE SWITCHING V CEO(SUS) RESISTIVE SWITCHING TURN-ON TIME INPUT CONDITIONS +10V 20 220 22 µF D1 33 2W 1 +10V 160 1 2N6438 D3 2 MR854 100 l B1 MM3735 0 22 680 pF 2 D1 D2 D3 D4 0.1µF 680 p F PULSES d = 3% 22 2N3763 PW Varied to Attain l C = 200 mA TURN-OFF TIME D4 100 680 pF l B1 adjusted to obtain the forced h FE desired 1N4934 MR854 Use inductive switching driver as the input to the resistive test circuit. 160 33 2W D3 0.22µF 2N6339 CIRCUIT VALUES V CC L coil = 180 µH R coil = 0.05Ω V cc = 20V L coil = 25 mH, V c c = 10V R coil = 0.7Ω OUTPUT WAVEFORMS TEST CIRCUITS INDUCTIVE TEST CIRCUIT DUT INPUT SEE ABOVE FOR DETAILED CONDITIONS L coil t1 TIME t t2 Fig.7 Inductive switching measurements Base current, l B2(pk) (A) 90% V CE(pk) 90% l C(pk) tr tt tf tc V CE 10% V CE (pk) 90% l B1 V CC V Clamp Test Equipment Scope-Tektronix 475 or Equivalent 10% l C (pk) 2% l C βf = 5 l C = 10A 8 6 4 2 0 0 1 2 3 4 5 Base-Emitter voltage, V BE (off) (V) Time www.nellsemi.com RL 2 10 V CE (pk) lB 1 Fig.8. Peak-Reverse current l C (pk) ts L coil (l C pk ) t2 = V CE or V lamp DUT V CC tf V CE V CC RS= 0.1Ω lC L coil (l C pk ) t1 = t V clamp 2 t f Clamped l C(pk) R coil 1N4937 OR EQUIVALENT RESISTIVE TEST CIRCUIT t 1 Adjusted to obtain l C lC 1 V CC = 300 V R L = 83Ω Pulse Width = 10 μs V clamp = 300 V R B ADJUSTED TO ATTAIN DESIRED l B1 Page 5 of 8 6 RoHS RoHS BUX48 / BUX48A SEMICONDUCTOR Nell High Power Products SWITCHING TIMES NOTE ln resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time, For this reason, the following new terms have been defined. An enlarged portion of the inductive switching waveforms is shown in Fig.7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obatined using the standard equation from AN-222: P SWT = t s = Voltage storage time, 90% l B1 to 10% V clamp t r = Voltage rise time, 10-90% V clamp 1 V l (t )f 2 cc c c ln general, t r +t f = t c . However, at lower test currents this relationship may not be valid. t f = Current fall time, 90-10% l C As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmak for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t C and t s ) which are guaranteed at 100°C. t t = Current tail, 10-2% l C t C = Crossover time, 10% V clamp to 10% l C INDUCTIVE SWITCHING Fig.10 Crossover and fall times Fig.9 Storage time, t S 1 5 3 0.5 2 Time, t (μs) Time, t (μs) T C = 100°C T C = 25°C 1 T C = 100°C 0.3 0.7 0.5 0.3 T C = 100°C T C = 25°C 0.2 0.1 T C = 25°C 0.05 tC 0.03 0.2 tf 0.02 Bf = 5 βf = 5 0.01 0.1 1 5 3 2 7 10 20 30 50 1 5 3 2 7 10 20 30 50 Collector current, l C (A) Collector current, l C (A) Fig.11a Turn-Off times versus forced gain Fig.11b. Turn-Off times versus lb 2 /lb 1 3 2 3 2 tS T C = 25°C l C = 10A 1 1 βf = 5 tS 0.5 0.3 0.2 Time,t (μs) 0.5 tC tf 0.1 0.3 0.2 tC 0.1 tf 0.05 0.03 0.05 T C = 25°C l C = 10A 0.03 0.02 0.02 V BE(off) = 5V 0.01 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 lb 2 /lb 1 Forced gain, β f www.nellsemi.com 0.01 Page 6 of 8 6 7 8 9 10 BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products The safe operating area figures 12 and 13 are specified for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS Fig.12 Forward bias safe operating area There are two limitations on the power handing ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate l C -V CE limits of the transistor that must be observed for reliable operation:i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 30 Collector current, l C (A) 10 5 1 ms DC 2 The data of Fig.12 is based on T C =25°C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C ≥ 25°C. Second breakdown limitations do not derate the voltages shown on Fig.12 may be found at any case temperature by using the appropriate curve on Fig.14 1 Limit only for turn on 0.5 0.2 0.1 t r ≤ 0.7 µs 0.05 T j (pk) may be caluclated from the data in Fig.11 at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. T C = 25°C 0.02 0.01 1 2 5 10 20 50 100 200 500 1000 Collector-Emitter voltage, V CE (V) Fig.13 Reverse bias safe operating area REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe leve for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Fig.13 gives RBSOA characteristics. Collector current, l C (A) 50 40 30 BUX48 20 BUX48A V BE(off) = 5V 10 T C = 100 ° C l C /l B1 ≥ 5 0 0 200 400 600 800 1000 Collector-Emitter voltage, V CE (V) POWER DERATING FACTOR (%) Fig.14 Power derating 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 160 Case temperature, T C (ºC) www.nellsemi.com Page 7 of 8 200 BUX48 / BUX48A SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.15 Thermal response 1 Transient thermal resistance R th(j-c) (°C/W) D=0.5 0.5 0.2 0.2 0.1 0.1 0.05 R th(j-c) (t) = r (t) R th(j-c) R th(j-c) = 1°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pK) - T C = P (pK) - R th(j-c) (t) 0.02 0.05 0.01 SINGLE PULSE 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 5 2 10 20 50 100 P (pK) t1 t2 SINGLE PULSE DUTY CYCLE, D=t 1 /t 2 200 500 1000 2000 Time, t (mS) OVERLOAD CHARACTERISTICS Fig.16 Rated overload safe operating area (OLSOA) OLSOA OLSOA applies when maximum collector current is limited and known. A good example is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. lf the transistor is then turned off within a specified amount of time, the magnitude 100 Collector current, l C (A) T C = 25°C 80 of collector current is also known. BUX48A Maximum allowable collector-emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drieve.) Storage time of the transistor has been factored into the curve. Therefore. with bus voltage and maximum collector current known, Fig.16 defines the maximum time which can be allowed for fault detection and shutdown of base drive. 60 t p = 10µs 40 BUX48 20 0 100 200 300 400 450 500 OLSOA is measured in a common-base circuit (fig.18) which allows precise definition of collector-emitter voltage and collector current. This is the same circuit that is used to measure forwardbias safe operating area. Collector-Emitter voltage, V CE (V) Fig.17 l C = f(dV/dt) Fig.18 Overload SOA test circuit 5 4 l C (Amp) Notes: 3 R BE = 100Ω R BE = 10Ω V CE = V CC + V BE Adjust pulsed current source for desired l C ,t p R BE = 2.2Ω 2 V EE R BE = 0 1 0 2 4 6 8 10 dV/dt (KV/µs) www.nellsemi.com 500 µF 500V Page 8 of 8 V CC