UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V Blocking Capability Lead-free: MJE13007L Halogen-free:MJE13007G ORDERING INFORMATION Normal MJE13007-TA3-T MJE13007-TF3- T Ordering Number Lead Free MJE13007L-TA3-T MJE13007L-TF3- T Halogen Free MJE13007G-TA3-T MJE13007G-TF3- T www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 1 of 6 QW-R203-019.F MJE13007 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Continuous Peak (1) Continuous Peak (1) SYMBOL VCEO VCBO VEBO IC ICM IB IBM RATINGS 400 700 9.0 8.0 16 4.0 8.0 UNIT V V V A A A A Continuous IE 12 A IEM 24 A Total Device Dissipation PD 80 W Operating and Storage Junction Temperature TJ, TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Peak (1) TC = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 1.56 °C/W Junction to Ambient °C/W 62.5 θJA Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%. Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8•lbs. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL TEST CONDITIONS VCEO(SUS) IC=10mA, IB=0 VCES=700V ICBO VCES=700V, TC=125°C IEBO VEB=9.0V, IC=0 hFE1 IC=2.0A, VCE=5.0V hFE2 IC=5.0A, VCE=5.0V IC=2.0A, IB=0.4A IC=5.0A, IB=1.0A VCE(SAT) IC=8.0A, IB=2.0A IC=5.0A, IB=1.0A, TC=100°C IC=2.0A, IB=0.4A VBE(SAT) IC=5.0A, IB=1.0A IC=5.0A, IB=1.0A, TC=100°C fT IC=500mA, VCE=10V, f=1.0 MHz Cob VCB=10V, IE=0, f=0.1MHz Current-Gain-Bandwidth Product Output Capacitance Resistive Load (Table 1) Delay Time tD VCC=125V, IC=5.0A, Rise Time tR IB1=IB2=1.0A, tp=25μs, Storage Time tS Duty Cycle≤1.0% Fall Time tF * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 TYP 8.0 5.0 4.0 14 80 0.025 0.5 1.8 0.23 MAX UNIT V 0.1 mA 1.0 mA 100 μA 40 30 1.0 V 2.0 V 3.0 V 3.0 V 1.2 V 1.6 V 1.5 V MHz pF 0.1 1.5 3.0 0.7 μs μs μs μs 2 of 6 QW-R203-019.F MJE13007 NPN SILICON TRANSISTOR TYPICAL THERMAL RESPONSE Figure1. Typical Thermal Response 1 0.7 D=0.5 0.5 D=0.2 0.2 D=0.1 0.1 D=0.05 0.07 0.05 D=0.02 0.02 D=0.01 0.01 0.01 0.02 RθJC(t)=r(t)RθJC RθJC=1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk)-TC=P(pk)RθJC (t) P(pk) t1 t2 DUTY CYCLE, D=t1/t2 SINGLE PULSE 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 10k Time, t (msec) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do not debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R203-019.F MJE13007 NPN SILICON TRANSISTOR Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING CIRCUIT VALUES TEST CIRCUITS REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING Inductive Switching L=20mH L=10mH RB2=0 RB2=8 VCC=15V VCC=20V IC(pk)=100mA RB1 selected for desired IB1 BVCEO (SUS) RBSOA L=500mH RB2=0 VCC=15Volts RB1 selected for desired IB1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VCC=125V RC=25Ω D1=1N5820 OR EQUIV 4 of 6 QW-R203-019.F MJE13007 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Figure 2. Base-Emitter Saturation Voltage IC/IB=5 1.2 1 IC=-40°C 0.8 25°C 100°C 0.6 0.4 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Collector-Emitte Saturation Voltage, VCE(SAT) (V) Base-Emitte Saturation Voltage, VBE(SAT) (V) 1.4 Figure 3. Collector-Emitter Saturation Voltage 5 10 10 IC/IB=5 5 2 1 0.5 0.2 IC=-40°C 0.1 25°C 0.05 100°C 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 Collector Current, IC (A) DC Current Gain, hFE Collector-Emitter Voltage, VCE (V) Collector Current, IC (A) Figure 7. Maximum Forward Bias Safe Operating Area Figure 6. Capacitance 10000 TJ=25°C Cib Collector Current, IC (A) Capacitance, C (pF) 5 10 2 1000 Cob 100 10 0.1 1 10 100 1000 Reverse Voltage,VR (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 100 50 20 10 Extended SOA@1μs,10μs 1μs 10μs 5 2 TC=25°C 1ms DC 1 5ms 0.5 0.2 Bonding wire limit 0.1 Thermal limit 0.05 Second breakdown limit 0.02 0.01 10 curves apply below rated vceo 20 30 50 70 100 200 300 500 1000 Collector-Emitter Voltage, VCE (V) 5 of 6 QW-R203-019.F MJE13007 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Figure 8. Maximum Reverse Bias Switching Safe Operating Area Figure 9. Forward Bias Power Derating 1 8 6 4 TC≤100°C GAIN≥4 LC=500μH VBE(OFF) -5V 2 Power Derating Factor Collector Current, IC (A) 10 0V -2V 0 0 100 200 300 400 500 600 700 800 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 Collector-Emitter Clamp Voltage, VCEV (V) SECOND BREAKDOWN DERATING 40 60 80 100 120 140 160 Time, t (ns) Time, t (ns) Case Temperature, TC (°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R203-019.F