UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. 1 TO-220F FEATURES * VCEO(SUS) 400 V * 700 V Blocking Capability *Pb-free plating product number: MJE13007L ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T MJE13007L-TA3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube (1)Packing Type (1)T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R203-019.D MJE13007 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Continuous Peak (1) Continuous Peak (1) SYMBOL VCEO VCBO VEBO IC ICM IB IBM RATINGS 400 700 9.0 8.0 16 4.0 8.0 UNIT V V V A A A A Continuous IE 12 A Peak (1) IEM 24 A Total Device Dissipation TC = 25℃ PD 80 W ℃ Operating and Storage Junction Temperature Range TJ, TSTG -65 ~ +125 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance Junction to Case θJC 1.56 ℃/W Thermal Resistance Junction to Ambient ℃/W 62.5 θJA Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%. Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8•lbs. ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise noted) PARAMETER Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL TEST CONDITIONS VCEO(SUS) IC=10mA, IB=0 VCBO=700V ICBO VCBO=700V, TC=125℃ IEBO VEB=9.0V, IC=0 hFE1 IC=2.0A, VCE=5.0V hFE2 IC=5.0A, VCE=5.0V IC=2.0A, IB=0.4A IC=5.0A, IB=1.0A VCE(SAT) IC=8.0A, IB=2.0A IC=5.0A, IB=1.0A, TC=100℃ IC=2.0A, IB=0.4A VBE(SAT) IC=5.0A, IB=1.0A IC=5.0A, IB=1.0A, TC=100℃ fT IC=500mA, VCE=10V, f=1.0 MHz Cob VCB=10V, IE=0, f=0.1MHz Current-Gain-Bandwidth Product Output Capacitance Resistive Load (Table 1) Delay Time tD VCC=125V, IC=5.0A, Rise Time tR IB1=IB2=1.0A, tp=25µs, Storage Time tS Duty Cycle≦1.0% Fall Time tF * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 TYP 8.0 5.0 4.0 14 80 0.025 0.5 1.8 0.23 MAX UNIT V 0.1 mA 1.0 mA 100 µA 40 30 1.0 V 2.0 V 3.0 V 3.0 V 1.2 V 1.6 V 1.5 V MHz pF 0.1 1.5 3.0 0.7 µs 2 of 6 QW-R203-019.D MJE13007 NPN SILICON TRANSISTOR TYPICAL THERMAL RESPONSE Transient thermal resistance, r(t) (NORMALIZED) Figure1. Typical Thermal Response 1 0.7 D=0.5 0.5 D=0.2 0.2 D=0.1 0.1 0.07 D=0.05 0.05 D=0.02 0.02 D=0.01 0.01 0.01 0.02 RθJC(t)=r(t)RθJC RθJC=1.56℃/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 TJ(pk) -TC=P(pk )RθJC (t) P(pk) t1 t2 DUTY CYCLE, D=t1/t2 SINGLE PULSE 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 10k Time, t (msec) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25℃; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be debated when TC ≥25℃. Second breakdown limitations do not debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R203-019.D MJE13007 NPN SILICON TRANSISTOR Table 1. Test Conditions for Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING TEST CIRCUITS VCC +15V 150Ω 3W 1µF MTP8P10 MTP8P10 100Ω 3W 100µF L +10V MPF930 MUR105 A R MJE210 B2 500Ω COMMON 150Ω 3W 500µF MUR8100E RC RB1 MPF930 +125 Vclamp=300V IC IB SCOPE 5.1k D1 VCE TUT MTP12N10 TUT RB IB 51 Voff -4V CIRCUIT VALUES 1µF Inductive Switching L=20mH L=10mH RB2=0 RB2=8 VCC=20V VCC=15V IC(pk )=100mA RB1 selected for desired IB1 BVCEO (SUS) RBSOA L=500mH R B2=0 VCC=15Volts R B1 selected for desired IB1 TYPICAL WAVEFORMS tf CLAMPED t f UNCLAMPED≒t2 t1 ADJUSTED TO OBTAIN I C IC ICM t1 ≤ t1 VCE VCEM TIME TEST EQUIPMENT SCOPE-TEKTRONIX 475 OR EQUIVALENT Vclamp t2 Lcoil(ICM) VCC Lcoil(ICM) t2 ≤ Vclamp t tf t UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VCC=125V RC=25Ω D1=1N5820 OR EQUIV VCE PEAK VCE 25µs +11V 0 9V IB1 IB I B2 tr, t f<10ns DUTY CYCLE=1.0% RB AND RC ADJUSTED FOR DESIRED IB AND I C 4 of 6 QW-R203-019.D MJE13007 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Figure 2. Base-Emitter Saturation Voltage IC/IB=5 1.2 1 I C=-40℃ 0.8 25℃ 100℃ 0.6 0.4 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Collector-Emitte Saturation Voltage, VCE(SAT) (V) Base-Emitte Saturation Voltage, VBE(SAT) (V) 1.4 Figure 3. Collector-Emitter Saturation Voltage 5 10 10 IC/IB =5 5 2 1 0.5 0.2 IC=-40℃ 0.1 25℃ 0.05 100℃ 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 Collector Current, IC (A) 100 2.5 DC Current Gain, hFE Collector-Emitter Voltage, VCE (V) Figure 5. DC Current Gain TJ=25℃ 2 1.5 I C=8A IC=5A 1 IC=3A I C=1A 0.5 0 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 25℃ 1 0.01 10 100 50 Collector Current, I C (A) Capacitance, C (pF) 1000 Cob 100 100 1000 Reverse Voltage,VR (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 1 Figure 7. Maximum Forward Bias Safe Operating Area Cib 10 0.1 Collector Current, IC (A) T J=25℃ 1 40℃ 10 Figure 6. Capacitance 10 0.1 VCE=5 TJ=100℃ Base Current, IB (A) 10000 5 10 Collector Current, IC (A) Figure 4. Collector Saturation Region 3 2 20 10 Extended SOA@1μs,10μs 1μs 10 5 μs 2 TC=25℃ 1ms DC 1 5ms 0.5 0.2 Bonding wire limit 0.1 Thermal limit 0.05 Second breakdown limit curves apply below 0.02 rated VCE O 0.01 10 20 30 50 70 100 200300 500 1000 Collector-Emitter Voltage, VCE (V) 5 of 6 QW-R203-019.D MJE13007 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Figure 8. Maximum Reverse Bias Switching Safe Operating Area Figure 9. Forward Bias Power Derating 1 8 6 T C≦100℃ G AIN≧4 LC=500μH 4 VBE(OFF) -5V 2 0V 0 Power Derating Factor Collector Current, I C (A) 10 -2V SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 0 100 200 300 400 500 600 700 800 Collector-Emitter Clamp Voltage, VCEV (V) Time, t (ns) Time, t (ns) 10000 7000 5000 100 100 120 140 160 80 Figure 11. Turn-Off Time (Resistive Load) 10000 tR 60 Case Temperature, T C (℃) Figure 10. Turn-On Time(Resistive Load) VCC=125V IC/IB=5 IB(on)=IB(off ) 1000 TJ=25℃ PW=125µs 40 VCC=125V IC/I B=5 IB(ON)=I B(OFF) TJ=25℃ tr PW=25μs tS 2000 1000 700 500 tF tD 10 1 2 3 4 5 6 7 8 9 10 Collector Current, IC (A) 200 100 1 2 3 4 5 6 7 8 9 10 Collector Current, IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R203-019.D