PD- 94820
IRF830APbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective Coss specified ( See AN 1001)
VDSS
Rds(on) max
ID
500V
1.40Ω
5.0A
TO-220AB
GDS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.0
3.2
20
74
0.59
± 30
5.3
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
Two transistor Forward
Half Bridge and Full Bridge
Notes through are on page 8
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1
11/5/03
IRF830APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.60
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
–––
V/°C Reference to 25°C, ID = 1mA
1.4
Ω
VGS = 10V, ID = 3.0A 4.5
V
VDS = VGS, ID = 250µA
25
VDS = 500V, VGS = 0V
µA
250
VDS = 400V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
–––
10
21
21
15
620
93
4.3
886
27
39
Max. Units
Conditions
–––
S
VDS = 50V, ID = 3.0A
24
ID = 5.0A
6.3
nC VDS = 400V
11
VGS = 10V, See Fig. 6 and 13 –––
VDD = 250V
–––
ID = 5.0A
ns
–––
RG = 14Ω
–––
RD = 49Ω,See Fig. 10 –––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 400V Typ.
Max.
Units
–––
–––
–––
230
5.0
7.4
mJ
A
mJ
Typ.
Max.
Units
–––
0.50
–––
1.7
–––
62
°C/W
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 5.0
showing the
A
G
integral reverse
––– –––
20
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 5.0A, VGS = 0V ––– 430 650
ns
TJ = 25°C, IF = 5.0A
––– 1.62 2.4
µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF830APbF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
4.5V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
1
4.5V
20µs PULSE WIDTH
TJ = 150 °C
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
10
10
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8.0
ID = 5.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF830APbF
20
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
1000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
10000
Ciss
100
Coss
10
Crss
1
1
10
100
1000
ID = 5.0A
16
12
8
4
0
A
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
12
16
20
24
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
8
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
0.4
0.6
0.8
1.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
100us
1ms
1
10ms
V GS = 0 V
VSD ,Source-to-Drain Voltage (V)
4
VDS = 400V
VDS = 250V
VDS = 100V
1.2
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF830APbF
5.0
VDS
VGS
ID , Drain Current (A)
4.0
RG
3.0
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.0
t1 , Rectangular Pulse Durat
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
D.U.T
RG
20V
DRIVER
L
VDS
+
V
- DD
IAS
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRF830APbF
500
ID
2.2A
3.2A
BOTTOM 5.0A
TOP
400
300
200
100
0
I AS
25
50
75
100
125
Starting TJ , Junction Temperature( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
790
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
785
780
775
+
V
- DS
770
0.0
VGS
1.0
2.0
3.0
4.0
5.0
I av , Avalanche Current (A)
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
V DSav , Avalanche Voltage (V)
10 V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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A
IRF830APbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRF830APbF
TO-220AB Package Outline
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- EMITTER
3- SOURCE
4 - DRAIN
HEXFET
3
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 18mH
RG = 25Ω, IAS = 5.0A. (See Figure 12)
ISD ≤ 5.0A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
TJ ≤ 150°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
8
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