IRF IRFP32N50KPBF

PD - 95052
IRFP32N50KPbF
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
l Lead-Free
HEXFET® Power MOSFET
VDSS
RDS(on)typ.
ID
0.135Ω
32A
500V
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
l
TO-247AC
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
Max.
Units
32
20
130
460
3.7
± 30
13
-55 to + 150
A
W
W/°C
V
V/ns
300
°C
10lb*in (1.1N*m)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
450
32
46
mJ
A
mJ
Typ.
Max.
Units
–––
0.24
–––
0.26
–––
40
°C/W
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1
2/26/04
IRFP32N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
∆V(BR)DSS/∆TJ
Min.
500
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.54
0.135
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA†
0.16
Ω
VGS = 10V, ID = 32A „
5.0
V
VDS = VGS, ID = 250µA
50
µA
VDS = 500V, VGS = 0V
250
µA
VDS = 400V, VGS = 0V, TJ = 150°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
28
120
48
54
5280
550
45
5630
155
265
Max. Units
Conditions
–––
S
VDS = 50V, ID = 32A
190
ID = 32A
59
nC
VDS = 400V
84
VGS = 10V „
–––
VDD = 250V
–––
ID = 32A
ns
–––
R G = 4.3Ω
–––
VGS = 10V „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 400V …
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
32
–––
130
A
–––
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 32A, VGS = 0V
TJ = 25°C, IF = 32A
di/dt = 100A/µs „
D
S
––– ––– 1.5
V
„
––– 530 800
ns
––– 9.0 13.5
µC
––– 30 –––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.87mH, RG = 25Ω,
IAS = 32A,
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
ƒ ISD ≤ 32A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
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IRFP32N50KPbF
1000
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
10
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
I D, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
5.0V
0.1
10
5.0V
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
4
5
7
8
9
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
1000
0.1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1
12
3.0
ID = 32A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP32N50KPbF
V GS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds
Crss = Cgd
SHORTED
Coss = Cds + Cgd
10000
C, Capacitance(pF)
20
Ciss
1000
Coss
100
VGS , Gate-to-Source Voltage (V)
100000
ID = 32A
V DS= 400V
V DS= 250V
V DS= 100V
16
12
8
4
Crss
10
0
1
10
100
1000
0
40
80
120
160
200
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150° C
100
10
TJ = 25 ° C
1
100us
10
1ms
0.1
0.2
V GS = 0 V
0.6
0.9
1.3
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
1.6
1
TC = 25 °C
TJ = 150 °C
Single Pulse
10
10ms
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP32N50KPbF
35
VGS
ID , Drain Current (A)
30
D.U.T.
RG
25
+
-VDD
10V
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
0
RD
VDS
90%
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
EAS , Single Pulse Avalanche Energy (mJ)
IRFP32N50KPbF
800
ID
14A
20A
BOTTOM 32A
TOP
640
15V
480
320
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
160
tp
A
0.01Ω
Fig 12c. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
Starting T J, Junction Temperature ( ° C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
I AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
VGS
.2µF
.3µF
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
Charge
Fig 13b. Basic Gate Charge Waveform
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IRFP32N50KPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP32N50KPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-D-
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
-A-
0.25 (.010) M D B M
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
5.30 (.209)
4.70 (.185)
NOTES:
5.50 (.217)
4.50 (.177)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
3
-C-
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
2.60 (.102)
2.20 (.087)
C A S
3.40 (.133)
3.00 (.118)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -LEAD
GateASSIGNMENTS
1 - Gate
1 - GATE2 - Collector
2 - Drain
2 - DRAIN
3 - Source
3 - Emitter
3 - SOURCE
4 - Drain
4 - DRAIN4 - Collector
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNATIONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFPE30
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/04
8
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