2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) z High Speed ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Base Voltage VCBO 1500 V Collector−Emitter Voltage VCEO 700 V Emitter−Base Voltage VEBO 5 V DC IC 14 Pulse ICP 28 Base Current IB 7 Collector Power Dissipation PC Junction Temperature Tj Tstg −55~150 °C Collector Current Storage Temperature Range A JEDEC ― A JEITA ― 55 W TOSHIBA 150 °C Weight: 5.5 g (typ.) 2-16E3A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-22 2SC5856 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT Collector Cut−off Current ICBO VCB = 1500 V, IE = 0 ― ― 1 mA Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 100 µA V (BR) CEO IC = 10 mA, IB = 0 700 ― ― V hFE (1) VCE = 5 V, IC = 2 A 20 ― 50 hFE (2) VCE = 5 V, IC = 7.5 A 6.5 ― 12.5 Collector − Emitter Breakdown Voltage DC Current Gain ― hFE (3) VCE = 5 V, IC = 11 A 4.5 ― 7.8 Collector−Emitter Saturation Voltage VCE (sat) IC = 11 A, IB = 2.75 A ― ― 3 V Base−Emitter Saturation Voltage VBE (sat) IC = 11 A, IB = 2.75 A ― 1.0 1.4 V fT VCE = 10 V, IC = 0.1 A ― 2 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 180 ― pF ― 3.5 ― ― 0.25 ― ― 1.8 ― ― 0.1 ― Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time Cob tstg(1) tf(1) tstg(2) tf(2) ICP = 7.5 A , IB1 (end) = 1.0 A fH = 32 kHz ICP = 6.5 A, IB1 (end) = 0.9 A fH = 100 kHz 2 µs µs 2006-11-22 2SC5856 IC – VCE 20 Collector current IC (A) 16 4.0 3.5 3.0 2.5 2.0 1.5 12 8 0.4 4 IB = 0.2 A 1.2 1.0 0.8 0.6 Common emitter Tc = 25℃ 0 0 2 4 6 Collector-emitter voltage 10 8 VCE (V) hFE – IC 100 Common emitter VCE = 5 V Tc = 100°C DC current gain hFE 25 −25 10 1 0.01 1 0.1 10 100 Collector current IC (A) IC – VBE 20 Common emitter VCE = 5 V Collector current IC (A) 16 12 Tc = 100°C −25 8 4 25 0 0 0.2 0.4 0.6 0.8 Base−emitter voltage 1.0 1.2 1.4 VBE (V) 3 2006-11-22 2SC5856 VCE – IB 10 VCE(sat) – IC 10 Common emitter Common emitter 6 Collector-emitter saturation voltage VCE(sat) (V) 8 Collector-emitter voltage VCE (V) Tc = −25℃ 6 4 5 6 7 8 9 10 Ic = 11 A 2 0 0 0.8 2.4 1.6 Base current IB 3.2 IC/IB = 4 10 1 8 0.1 0.01 4.0 1 10 (A) VCE – IB VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter voltage VCE (V) 6 8 6 4 8 9 10 Ic = 11 A 2 0 0.8 2.4 1.6 3.2 10 IC/IB = 4 1 8 0.1 4.0 1 10 VCE – IB VCE (sat) – IC 6 VCE Collector-emitter saturation voltage VCE (sat) (V) 8 6 4 7 8 9 10 Ic = 11 A 2 0 (A) 10 Common emitter Tc = 100℃ 5 6 100 Collector current IC (A) 10 (V) Common emitter Tc = 25℃ 0.01 0 Base current IB Collector-emitter voltage (A) 10 Common emitter Tc = 25℃ 7 100 Collector current IC 10 5 6 Tc = −25℃ IC/IB = 4 10 1 Common emitter Tc = 100℃ 8 0.1 0.01 0.8 1.6 2.4 Base current IC 3.2 (A) 4.0 1 10 100 Collector current IC (A) 2 4 2006-11-22 2SC5856 rth(j-c) – tw Transient thermal impedance (junction−case) rth(j-c) (°C/W) 10 1 0.1 0.01 Tc = 25℃ (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10μ 100μ 10m 1m 100m Pulse width tw 1 10 100 1000 (s) Reverse Bias – Safe Operating Area Safe Operating Area 100 100 1 ms* 100 µs* IC max (Pulse)* IC max (Pulse) 10 µs* IC max (Continuous) 420V,28A 10 IC (A) 10 ms* 100 ms* Collector current Collector current IC (A) 10 DC operation Tc = 25°C 1 1 0.1 1500V,18mA 0.1 *:Single nonrepetitive pulse 0.01 Tc = 25°C 0.01 1 Curves must be linearly with increase Ta = 25℃ derated in VCEO max temperature. 10 100 Collector-emitter voltage VCE 0.001 10 1000 (V) Non repeated pulse IB2 = −3A L = 500 μH 100 VCBO max 10000 1000 Collector-emitter voltage VCE (V) PC – Tc Collector power dissipation PC (W) 100 Infinite heat sink 80 60 40 20 0 0 25 50 75 Case temperature 100 Tc 125 150 (°C) 5 2006-11-22 2SC5856 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2006-11-22