2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV · High voltage: VCBO = 1500 V · Low saturation voltage: VCE (sat) = 3 V (max) · High speed: tf (2) = 0.1 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 22 Pulse ICP 44 Base current IB 11 A Collector power dissipation PC 200 W Junction temperature Tj 150 °C JEDEC ― Tstg -55~150 °C JEITA ― Collector current Storage temperature range A TOSHIBA Weight: 9.75 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Symbol ICBO 2-21F2A Test Condition VCB = 1500 V, IE = 0 Min Typ. Max Unit ¾ ¾ 1 mA IEBO VEB = 5 V, IC = 0 ¾ ¾ 10 mA V(BR) CEO IC = 10 mA, IB = 0 700 ¾ ¾ V hFE (1) VCE = 5 V, IC = 2 A 20 ¾ 50 hFE (2) VCE = 5 V, IC = 10 A 8 ¾ 17 hFE (3) VCE = 5 V, IC = 17 A 4.8 ¾ 8.3 Collector-emitter saturation voltage VCE (sat) IC = 17 A, IB = 4.25 A ¾ ¾ 3 V Base-emitter saturation voltage VBE (sat) IC = 17 A, IB = 4.25 A ¾ 1.0 1.5 V fT VCE = 10 V, IC = 0.1 A ¾ 2 ¾ MHz VCB = 10 V, IE = 0, f = 1 MHz ¾ 280 ¾ pF ICP = 8 A, IB1 (end) = 1.4 A, fH = 64 kHz ¾ 2.5 3 ¾ 0.15 0.3 1.6 1.8 0.1 0.15 Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Collector output capacitance Storage time Switching time Fall time Storage time Fall time Cob tstg (1) tf (1) tstg (2) tf (2) ICP = 8 A, IB1 (end) = 1.1 A, fH = 100 kHz 1 ¾ ¾ ms 2001-10-29 2SC5695 IC – VCE Collector current IC (A) 20 4 3.5 16 3 2 1.8 1.6 1.4 1.2 1.0 2.5 12 0.8 0.6 0.4 8 IB = 0.2 A 4 Common emitter Tc = 25°C 0 0 2 4 6 8 Collector-emitter voltage VCE 10 (V) hFE – IC 300 100 DC current gain hFE Tc = 100°C 25 30 -25 10 3 Common emitter VCE = 5 V 1 0.5 0.01 0.03 0.1 0.3 1 Collector current 3 IC 10 30 (A) IC – VBE 20 16 Collector current IC (A) Common emitter VCE = 5 V 12 8 4 0 0 Tc = 100°C 0.2 0.4 0.6 -25 25 0.8 Base-emitter voltage VBE 1 1.2 (V) 2 2001-10-29 2SC5695 VCE – IB VCE (sat) – IC 10 Common emitter Tc = -25°C 8 Collector emitter saturation voltage VCE (sat) (V) Collector emitter voltage VCE (V) 10 6 4 IC = 17 A 2 7 8 9 0 0 10 11 12 13 14 15 16 5 3 1 1.6 2.4 Base current IB 3.2 10 0.5 IC/IB = 4 0.1 4 1 Collector emitter saturation voltage VCE (sat) (V) (V) Collector emitter voltage VCE 8 6 4 IC = 17 A 0 0 15 16 5 1.6 2.4 Base current IB 3.2 10 0.5 IC/IB = 4 0.1 1 IC = 17 A 4 0 0 0.8 1.6 2.4 Base current IB 5 14 15 3.2 10 30 50 IC 100 (A) VCE (sat) – IC 10 6 12 13 3 Collector current Collector emitter saturation voltage VCE (sat) (V) (V) Collector emitter voltage VCE 8 6 8 0.3 4 Common emitter Tc = 100°C 9 10 11 (A) 1 VCE – IB 7 8 IC 100 Common emitter Tc = 25°C (A) 10 2 30 50 3 0.05 0.2 0.8 10 VCE (sat) – IC 10 Common emitter Tc = 25°C 13 14 5 Collector current VCE – IB 7 8 9 10 11 12 3 (A) 10 2 6 8 0.3 0.05 0.2 0.8 Common emitter Tc = -25°C 16 5 3 1 (A) 10 IC/IB = 4 0.3 0.1 1 3 5 Collector current 3 6 8 0.5 0.05 0.2 4 Common emitter Tc = 100°C 10 IC 30 50 100 (A) 2001-10-29 2SC5695 Transient thermal impedance (junction-case) rth (j-c) (°C/W) rth (j-c) – tw 10 1 0.1 0.01 Tc = 25°C (infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10 m 100 m 1m 10 m 100 m Pulse width 1 tw 10 100 PC – Tc Safe Operating Area 100 250 100 ms* 10 ms* PC IC max (continuous) Collector power dissipation 1 ms* 10 (A) 10 ms* IC Collector current Infinite heat sink (W) IC max (pulsed) 100 ms* 1 DC operation Tc = 25°C 200 150 100 50 0 0 0.1 25 50 75 100 Case temperature Tc *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 1000 (s) 10 125 150 (°C) VCEO max 100 Collector-emitter voltage VCE 1000 (V) 4 2001-10-29 2SC5695 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-10-29