TOSHIBA 2SC3710A

2SC3710A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
High-Current Switching Applications
Unit: mm
•
Low collector saturation voltage: VCE (sat) = 0.4 V (max)
•
High-speed switching: tstg = 1.0 µs (typ.)
•
Complementary to 2SA1452A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
12
A
Base current
IB
2
A
PC
30
W
Tj
150
°C
Tstg
−55 to 150
°C
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
JEDEC
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
―
10
µA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
―
10
µA
V (BR) CEO
IC = 50 mA, IB = 0
80
―
―
V
VCE = 1 V, IC = 1 A
70
―
240
hFE (2)
VCE = 1 V, IC = 6 A
40
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = 6 A, IB = 0.3 A
―
0.2
0.4
V
Base-emitter saturation voltage
VBE (sat)
IC = 6 A, IB = 0.3 A
―
0.9
1.2
V
VCE = 5 V, IC = 1 A
―
80
―
MHz
VCB = 10 V, IE = 0, f = 1 MHz
―
220
―
pF
―
0.2
―
―
1.0
―
―
0.2
―
hFE (1)
DC current gain
(Note)
Transition frequency
Collector output capacitance
Turn-on time
fT
Cob
ton
Storage time
tstg
IB2
Switching time
Input
IB1
20 µs
IB1
IB2
Output
5Ω
Collector-emitter breakdown voltage
µs
VCC ≈ 30 V
Fall time
tf
IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%
Note: hFE (1) classification
O: 70 to 140, Y: 120 to 240
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2SC3710A
Marking
C3710A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC3710A
IC – VCE
VCE – IC
1.0
Common
emitter
Tc = 25°C
VCE
50
40
8
Collector-emitter voltage
IC (A)
Collector current
60
(V)
100 80 70
10
30
6
20
4
IB = 10 mA
2
0
0
2
4
6
8
10
Collector-emitter voltage
VCE
12
0.8
40
60 80 100
0.4
400
600
0.2
2
12
Collector current IC (A)
VCE – IC
0.8
60
80
100
150
VCE
40
200
0.6
300
0.4
600
0.2
0
0
Common emitter
Tc = 100°C
(V)
Common emitter
Tc = −55°C
IB = 20 mA
Collector-emitter voltage
(V)
10
8
1.0
VCE
Collector-emitter voltage
6
4
VCE – IC
2
6
4
8
10
IB = 50 mA
300
400
700
0.2
2
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
VCE = 1 V
hFE
25
−55
50
30
0.3
1
8
10
12
VCE (sat) – IC
1
Tc = 100°C
10
0.1
6
4
hFE – IC
100
200
Collector current IC (A)
500
300
150
0.4
0
0
12
100
0.6
Collector current IC (A)
DC current gain
200
300
(V)
1.0
0.8
150
0.6
0
0
14
Common emitter
Tc = 25°C
IB = 20 mA
3
10
0.5
0.3
0.1
0.05
Collector current IC (A)
Tc = −55°C
25
100
0.02
0.1
20
Common emitter
IC/IB = 20
0.3
1
3
10
20
Collector current IC (A)
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2SC3710A
VBE (sat) – IC
IC – VBE
10
Common emitter
IC/IB = 20
Common emitter
VCE = 1 V
Tc = −55°C
1
8
IC (A)
3
6
0.5
25
Collector current
Base-emitter saturation voltage
VBE (sat) (V)
5
100
0.3
0.1
0.1
0.3
1
3
Tc = 100°C
25
4
−55
2
20
10
Collector current IC (A)
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage
VBE
2.0
2.4
(V)
rth – tw
100
(°C/W)
Curves should be applied in thermal limited area.
Transient thermal resistance
rth
30
(2)
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
10
(1)
3
1
0.3
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe Operating Area
30
PC – Ta
1 ms*
10 I max
C
(continuous)
(W)
(1) Tc = Ta
5
10 ms*
DC operation
Tc = 25°C
1
0.5
0.3 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
1
3
10
Collector-emitter voltage
(1)
30
20
10
VCEO
max
30
(2)
0
0
100
VCE
Infinite heat sink
(2) No heat sink
40
PC
3
50
Collector dissipation
Collector current
IC (A)
IC max (pulsed)*
(V)
40
80
120
Ambient temperature
4
160
Ta
200
240
(°C)
2004-07-07
2SC3710A
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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