2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV z High Voltage : VCBO = 1700 V z Low Saturation Voltage : VCE (sat) = 1.5 V (Max) z High Speed : tf(2) = 0.1 µs (Typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Base Voltage VCBO 1700 V Collector−Emitter Voltage VCEO 750 V Emitter−Base Voltage VEBO 5 V DC IC 22 Pulse ICP 44 Collector Current A Base Current IB 11 A Collector Power Dissipation PC 200 W JEDEC ― Junction Temperature Tj 150 °C JEITA ― Tstg −55~150 °C TOSHIBA Storage Temperature Range 2-21F2A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-22 2SC5858 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut−off Current ICBO VCB = 1700 V, IE = 0 ― ― 1 mA Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 100 µA V (BR) CEO IC = 10 mA, IB = 0 750 ― ― V hFE (1) VCE = 5 V, IC = 2 A 30 ― 60 hFE (2) VCE = 5 V, IC = 8 A 11 ― 19 Collector − Emitter Breakdown Voltage DC Current Gain ― hFE (3) VCE = 5 V, IC = 17 A 5 ― 7.5 Collector−Emitter Saturation Voltage VCE (sat) IC = 17 A, IB = 4.25 A ― ― 1.5 V Base−Emitter Saturation Voltage VBE (sat) IC = 17 A, IB = 4.25 A ― 1.0 1.5 V fT VCE = 10 V, IC = 0.1 A ― 2 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 280 ― pF ― 4.5 ― ― 0.1 ― ― 3.5 ― ― 0.1 ― Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time Cob tstg(1) tf(1) tstg(2) tf(2) ICP = 9 A , IB1 (end) = 1.4 A fH = 32 kHz ICP = 8 A, IB1 (end) = 1.2 A fH = 45 kHz 2 µs µs 2006-11-22 2SC5858 IC – VCE 20 4.0 3.5 3.0 2.5 IC (A) 16 2.0 1.5 1.2 1.0 0.8 Collector current 12 0.6 8 0.4 IB = 0.2 A 4 Common emitter Tc = 25℃ 0 0 2 4 6 Collector-emitter voltage 8 VCE 10 (V) hFE – IC 100 Common emitter Tc = 100°C VCE = 5 V DC current gain hFE 25 −25 10 1 0.01 1 0.1 10 100 Collector current IC (A) IC – VBE 20 Common emitter VCE = 5 V Collector current IC (A) 16 12 Tc = 100°C −25 8 25 4 0 0 0.2 0.4 0.6 Base−emitter voltage 0.8 1.0 1.2 VBE (V) 3 2006-11-22 2SC5858 VCE – IB VCE(sat) – IC 10 10 Common emitter Tc = −25℃ Collector-emitter saturation voltage VCE(sat) (V) 8 Collector-emitter voltage VCE (V) Common emitter Tc = −25℃ 6 Ic = 17 A 4 16 15 10 2 14 13 9 12 8 11 7 0 0 6 1 8 0.1 0.01 0.8 2.4 1.6 Base current IB 3.2 IC/IB = 4 10 4.0 1 10 Collector current IC (A) VCE – IB 100 (A) VCE (sat) – IC 10 10 Common emitter Tc = 25℃ Collector-emitter saturation voltage VCE (sat) (V) ollector-emitter voltage VCE (V) Common emitter Tc = 25℃ 8 6 Ic = 17 A 16 4 15 10 14 13 9 2 12 8 11 6 1 IC/IB = 4 10 8 0.1 7 0 0 0.8 2.4 1.6 Base current IB 3.2 0.01 4.0 1 10 (A) 10 Collector-emitter saturation voltage VCE (sat) (V) 8 Collector-emitter voltage VCE (V) Common emitter Tc = 100℃ 6 Ic = 17 A 16 15 10 14 9 2 12 8 (A) VCE (sat) – IC VCE – IB 10 4 100 Collector current IC Common emitter Tc = 100℃ 6 1 IC/IB = 4 10 8 0.1 11 7 0 0 0.01 0.8 1.6 2.4 3.2 4.0 1 Base current IC (A) 10 Collector current 4 100 IC (A) 2006-11-22 2SC5858 rth(j-c) – tw Transient thermal impedance (junction−case) rth(j-c) (°C/W) 10 1 0.1 0.01 Tc = 25℃ (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10μ 100μ 10m 1m 100m Pulse width tw 1 10 100 1000 (s) Reverse Bias – Safe Operating Area Safe Operating Area 100 100 1 ms* IC max (Pulse)* 100 µs* IC max (Pulse) 10 µs* 495V,44A IC max (Continuous)* 10 IC (A) 10 ms* 100 ms* 1 0.1 Collector current Collector current IC (A) 10 DC operation Tc = 25°C *:Single nonrepetitive pulse must be linearly with increase 1700V,30mA Ta = 25℃ Non repeated pulse derated in IB2 = −3A L = 500 μH VCEO max temperature. 0.01 1 0.1 0.01 Tc = 25°C Curves 1 10 100 Collector-emitter voltage VCE 0.001 10 1000 (V) VCBO max 100 1000 Collector-emitter voltage VCE 10000 (V) PC – Tc Collector power dissipation PC (W) 250 Infinite heat sink 200 150 100 50 0 0 25 50 75 Case temperature 100 Tc 125 150 (°C) 5 2006-11-22 2SC5858 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2006-11-22