SEMIKRON SK200GD066T

SK200GD066T
6 #5 7*" &
Absolute Maximum Ratings
Symbol Conditions
IGBT
2*
8 6 #5 7*
*
8 6 !<5 7*
*=
:;;
2
!<0
+
6 <; 7*
!$!
+
0;;
+
> #;
2
8 6 !#5 7*
:
B
6 #5 7*
CC
+
6 <; 7*
<C
+
!#;
+
*=6 # ' *
SEMITOP® 4
2** 6 $:; 2? 2( @ #; 2?
2* A :;; 2
Units
6 #5 7*
2(
Values
Inverse Diode
8 6 !<5 7*
IGBT Module
=
=6 # ' Module
SK200GD066T
Target Data
Features
!"#"$
% &
' () *+, -.
/* Typical Applications
%
0# 12+
3 !4"5 1-
D=E
+
%8
F0; 333 G!5;
7*
F0; 333 G!#5
7*
#5;;
2
2
+*" ! 3
6 #5 7*" &
Characteristics
Symbol Conditions
IGBT
2(DE
2( 6 2*" * 6 $"# +
*
2( 6 ; 2" 2* 6 2*
(
2* 6 ; 2" 2( 6 #; 2
min.
typ.
max.
5
5"4
:"5
8 6 #5 7*
+
8 6 #5 7*
!#;;
8 6 !#5 7*
*
2*DE
*
*
2( 6 !5 2
=( 6 ## H
K 6 #5<5 +KB
=(&& 6 ## H
K 6 #5<5 +KB
&&
=D8FE
()
+
;":
!
8 6 !5; 7*
;"<
;"4
2
8 6 #57*
#"<5
0
H
8 6 !5;7*
0"#5
5"5
H
2
2
!"05
!"C
8 6 !5;7*%3
!"<
#"!5
& 6 ! IJ
!#"#
;"<:
;"$:
!$0
!#5
!<":
!!$!
4:
L
!!"4
L
;"05
MK-
*
DE
D&&E
&
+
8 6 #5 7*
* 6 #;; +" 2( 6 !5 2 8 6 #57*%3
2* 6 #5" 2( 6 ; 2
2
+
8 6 !#5 7*
2*;
Units
2** 6 $;;2
*6 #;;+
8 6 !#5 7*
2(6 F<KG!5 2
2
GD-T
1
14-09-2007 DIL
© by SEMIKRON
SK200GD066T
Characteristics
Symbol Conditions
Inverse Diode
2 6 2*
6 #;; +? 2( 6 ; 2
2;
®
SEMITOP 4
IGBT Module
8 6 #5 7*%3
typ.
max.
Units
!"04
2
8 6 !5; 7*%3
!"5
2
8 6 #5 7*
;"C5
2
8 6 !5; 7*
;"45
2
8 6 #5 7*
$
H
8 6 !5; 7*
$"5
H
8 6 !#5 7*
4;
#;
+
B*
==
N
6 #;; +
K 6 #5<5 +KB
2**6 $;;2
$"#
L
=D8FE.
;"4
MK-
1
SK200GD066T
min.
$"5
/
:;
0C$>5O
H
Temperature sensor
=!;;
6!;;7* D=#5651HE
Target Data
Features
!"#"$
% &
' () *+, -.
/* This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
%
0# 12+
3 !4"5 1-
GD-T
2
14-09-2007 DIL
© by SEMIKRON
SK200GD066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
14-09-2007 DIL
© by SEMIKRON
SK200GD066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
14-09-2007 DIL
© by SEMIKRON
SK200GD066T
* <0 D &
P #3 &
P $": E
* <0
5
(.F
14-09-2007 DIL
© by SEMIKRON