APTM50AM24SC Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 500V RDSon = 24mΩ max @ Tj = 25°C ID = 150A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged VBUS 0/VBUS OUT S1 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 150 110 600 ±30 24 1250 24 30 1300 Unit V A V mΩ W A June, 2004 S2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM50AM24SC – Rev 1 G1 • APTM50AM24SC All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min 500 VGS = 0V,VDS = 500V T j = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 75A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 3 Min VGS = 10V VBus = 250V ID = 150A 500 3 24 5 ±500 Unit V µA mA mΩ V nA Max Unit nF nC 216 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A R G = 0.8Ω Characteristic Typ 19.6 4.2 0.3 434 Max 120 SiC Parallel diode ratings and characteristics Symbol VRRM Typ Test Conditions 10 17 50 41 Min 600 Maximum Peak Repetitive Reverse Voltage Tj = 25°C Tj = 125°C Tc = 125°C Tj = 25°C Tj = 175°C ns Typ Max 400 800 80 1.6 2.0 1600 8000 Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 80A QC Total Capacitive Charge IF = 80A, VR = 300V di/dt =2000A/µs 112 Q Total Capacitance f = 1MHz, VR = 200V 520 f = 1MHz, VR = 400V 400 µA A 1.8 2.4 V nC pF June, 2004 IRRM Unit V APT website – http://www.advancedpower.com 2–7 APTM50AM24SC – Rev 1 IDSS Test Conditions VGS = 0V, ID = 1.5mA APTM50AM24SC Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max Unit A 1.15 V ns nC Max 0.10 0.46 0.35 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–7 APTM50AM24SC – Rev 1 June, 2004 Package outline APTM50AM24SC Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V VGS=10&15V 480 7V 360 6.5V 240 6V 120 VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 7.5V I D, Drain Current (A) 5.5V 360 300 240 180 TJ =25°C 120 60 TJ =125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 75A 1.15 VGS=10V 1.10 VGS=20V 1.05 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 I D, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) 1.00 0.95 0.90 120 80 40 0 0 60 120 180 240 ID, Drain Current (A) 300 360 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 June, 2004 I D, Drain Current (A) 10 480 600 RDS(on) Drain to Source ON Resistance 1 4–7 APTM50AM24SC – Rev 1 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=75A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 limited by RDSon 1ms 10 10ms Single pulse TJ =150°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 June, 2004 C, Capacitance (pF) 100µs limited by R DSon APT website – http://www.advancedpower.com 5–7 APTM50AM24SC – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM24SC APTM50AM24SC Delay Times vs Current Rise and Fall times vs Current 60 80 VDS=333V RG=0.8Ω TJ=125°C L=100µH 60 td(off) 40 t r and tf (ns) V DS =333V RG =0.8Ω T J=125°C L=100µH 30 20 td(on) tf 40 20 tr 10 0 0 30 80 130 180 230 ID, Drain Current (A) 280 30 3 Eon 1 280 VDS=333V ID=150A TJ=125°C L=100µH 6 Eoff 4 Eon 2 0 0 30 80 130 180 230 0 280 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=0.8Ω T J=125°C 500 400 300 200 100 0 60 90 120 ID, Drain Current (A) 2 3 4 5 6 7 8 9 150 1000 Source to Drain Diode Forward Voltage TJ =150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) June, 2004 30 1 Gate Resistance (Ohms) 600 Frequency (kHz) 230 Switching Energy vs Gate Resistance Eoff 2 180 8 Switching Energy (mJ) Switching Energy (mJ) VDS=333V RG=0.8Ω T J=125°C L=100µH 4 130 I D, Drain Current (A) Switching Energy vs Current 5 80 APT website – http://www.advancedpower.com 6–7 APTM50AM24SC – Rev 1 t d(on) and td(off) (ns) 50 APTM50AM24SC Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1600 TJ=25°C 120 TJ =75°C IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 160 TJ=175°C 80 TJ =125°C 40 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 1400 TJ =175°C 1200 TJ =125°C 1000 800 TJ =75°C 600 400 TJ=25°C 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 3000 2500 2000 1500 1000 500 0 1000 June, 2004 10 100 VR Reverse Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM50AM24SC – Rev 1 1